Samsung Power Field Effect Transistors (FET) 1,134

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Case Connection	Qualification	JEDEC-95 Code	JESD-609 Code	Maximum Feedback Capacitance (Crss)
SFW9610	Samsung	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	20 W	PLASTIC/EPOXY		200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	7 A	143 mJ	1.8 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				3 ohm	1.75 A	SINGLE	R-PSSO-G2	DRAIN	Not Qualified
SSD2102	Samsung	P-CHANNEL	SINGLE	YES	2.5 W	PLASTIC/EPOXY		20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			5.3 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.06 ohm	5.3 A	DUAL	R-PDSO-G8		Not Qualified
SSU1N45	Samsung	N-CHANNEL	SINGLE	NO	42 W	PLASTIC/EPOXY		450 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			1.2 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				8.5 ohm	1.2 A	SINGLE	R-PSIP-T3		Not Qualified
SSH8N55	Samsung	N-CHANNEL	SINGLE	NO	170 W	PLASTIC/EPOXY		550 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			8 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				1 ohm	8 A	SINGLE	R-PSFM-T3		Not Qualified
SSP3N80A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	PLASTIC/EPOXY		800 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	12 A	240 mJ	3 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				4.8 ohm	3 A	SINGLE	R-PSFM-T3		Not Qualified	TO-220AB
SSS6N55	Samsung	N-CHANNEL	SINGLE	NO	40 W	PLASTIC/EPOXY		550 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			3.4 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				1.8 ohm	3.2 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified	TO-220AB
SSU2N60A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	44 W	PLASTIC/EPOXY		600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	6 A	141 mJ	1.8 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				5 ohm	1.8 A	SINGLE	R-PSIP-T3		Not Qualified
SSP4N70A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	125 W	PLASTIC/EPOXY	SWITCHING	700 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	2.5 A	280 mJ	4 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	125 W	150 Cel	SILICON	210 ns	430 ns	Tin/Lead (Sn/Pb)	2.5 ohm	4 A	SINGLE	R-PSFM-T3		Not Qualified	TO-220AB	e0
IRFM010	Samsung	N-CHANNEL	SINGLE	YES	3.1 W						ENHANCEMENT MODE	1			2.7 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel						2.7 A
SSH60N08	Samsung	N-CHANNEL	SINGLE	NO	230 W	PLASTIC/EPOXY		80 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			60 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.03 ohm	60 A	SINGLE	R-PSFM-T3		Not Qualified
SSD2015	Samsung	P-CHANNEL	SEPARATE, 2 ELEMENTS	YES	2 W	PLASTIC/EPOXY		12 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2			3.8 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.13 ohm	3.2 A	DUAL	R-PDSO-G8		Not Qualified
IRFW14A	Samsung	N-CHANNEL	SINGLE	YES	3.8 W						ENHANCEMENT MODE	1			10 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel						10 A
SFP9634	Samsung	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	70 W	PLASTIC/EPOXY		250 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	20 A	313 mJ	5 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				1.3 ohm	5 A	SINGLE	R-PSFM-T3		Not Qualified	TO-220AB
IRFM014	Samsung	N-CHANNEL	SINGLE	YES	3.1 W	PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			2.7 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.2 ohm	2.7 A	SINGLE	R-PSSO-G3		Not Qualified
SSD2003	Samsung	N-CHANNEL	SEPARATE, 2 ELEMENTS	YES	2 W	PLASTIC/EPOXY		25 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2			3.5 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.1 ohm	3.5 A	DUAL	R-PDSO-G8		Not Qualified
SSD2013	Samsung	N-CHANNEL	SEPARATE, 2 ELEMENTS	YES	2 W	PLASTIC/EPOXY		12 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2			5 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.06 ohm	5 A	DUAL	R-PDSO-G8		Not Qualified
SSS60N05	Samsung	N-CHANNEL	SINGLE	NO	52 W	PLASTIC/EPOXY		50 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			36 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.018 ohm	36 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified	TO-220AB
SFH9244	Samsung	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY		250 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	35 A	473 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR			SILICON				.8 ohm	8.7 A	SINGLE	R-PSFM-T3		Not Qualified
SSS4N90AS	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY		900 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	18 A	519 mJ	2.8 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	40 W	150 Cel	SILICON	120 ns	215 ns		3.7 ohm	2.8 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified			40 pF
SFW9520	Samsung	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	49 W	PLASTIC/EPOXY		100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	24 A	144 mJ	6 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				.6 ohm	6 A	SINGLE	R-PSSO-G2	DRAIN	Not Qualified
SSP6N70A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	130 W	PLASTIC/EPOXY		700 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	24 A	582 mJ	6 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				1.8 ohm	6 A	SINGLE	R-PSFM-T3		Not Qualified	TO-220AB
SSH40N15	Samsung	N-CHANNEL	SINGLE	NO	230 W	PLASTIC/EPOXY		150 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			40 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.08 ohm	40 A	SINGLE	R-PSFM-T3		Not Qualified
SSP60N06	Samsung	N-CHANNEL	SINGLE	NO	190 W	PLASTIC/EPOXY		60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			60 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				.018 ohm	60 A	SINGLE	R-PSFM-T3		Not Qualified	TO-220AB
SSP3N90	Samsung	N-CHANNEL	SINGLE	NO	125 W	PLASTIC/EPOXY		900 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			3 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				4.5 ohm	3 A	SINGLE	R-PSFM-T3		Not Qualified	TO-220AB
SFR9210	Samsung	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	19 W	PLASTIC/EPOXY		200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	6.4 A	119 mJ	1.6 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				3 ohm	1.6 A	SINGLE	R-PSSO-G2	DRAIN	Not Qualified
SSH25N35	Samsung	N-CHANNEL	SINGLE	NO	280 W	PLASTIC/EPOXY		350 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			25 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.2 ohm	25 A	SINGLE	R-PSFM-T3		Not Qualified
SSU4N60A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	49 W	PLASTIC/EPOXY		600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	11 A	257 mJ	2.8 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				2.5 ohm	2.8 A	SINGLE	R-PSIP-T3		Not Qualified
SSD2101	Samsung	N-CHANNEL	SINGLE	YES	2.5 W	PLASTIC/EPOXY		30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			7 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.03 ohm	7 A	DUAL	R-PDSO-G8		Not Qualified
SSP5N90	Samsung	N-CHANNEL	SINGLE	NO	150 W	PLASTIC/EPOXY		900 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			5 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				2.5 ohm	5 A	SINGLE	R-PSFM-T3		Not Qualified	TO-220AB
IRFW44A	Samsung	N-CHANNEL	SINGLE	YES	126 W						ENHANCEMENT MODE	1			50 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel						50 A
SSU1N60A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	28 W	PLASTIC/EPOXY		600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	3 A	66 mJ	.9 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				12 ohm	.9 A	SINGLE	R-PSIP-T3		Not Qualified
SSS15N06	Samsung	N-CHANNEL	SINGLE	NO	37 W	PLASTIC/EPOXY		60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			14 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.084 ohm	14 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified	TO-220AB
SSU2N80A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY		800 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	6.8 A	216 mJ	1.7 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				6 ohm	1.7 A	SINGLE	R-PSIP-T3		Not Qualified
SSH80N06A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	180 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	297 A	3700 mJ	85 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				.01 ohm	85 A	SINGLE	R-PSFM-T3		Not Qualified
SFS9634	Samsung	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	33 W	PLASTIC/EPOXY		250 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	14 A	145 mJ	3.4 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				1.3 ohm	3.4 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified
SSR2N60	Samsung	N-CHANNEL	SINGLE	YES	42 W	PLASTIC/EPOXY		600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			2 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				5 ohm	2 A	SINGLE	R-PSSO-G2		Not Qualified
SSS4N90	Samsung	N-CHANNEL	SINGLE	NO	42 W	PLASTIC/EPOXY		900 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			2.5 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				3 ohm	2.5 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified	TO-220AB
SFU9034	Samsung	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	49 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	56 A	336 mJ	14 A	3	IN-LINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.14 ohm	14 A	SINGLE	R-PSIP-T3		Not Qualified
SSF8N90A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	95 W	PLASTIC/EPOXY		900 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	32 A	801 mJ	5.5 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	95 W	150 Cel	SILICON	145 ns	345 ns		1.6 ohm	5.5 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified			90 pF
SFS9630	Samsung	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	33 W	PLASTIC/EPOXY		200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	18 A	258 mJ	4.4 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.8 ohm	4.4 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified
SSH15N60	Samsung	N-CHANNEL	SINGLE	NO	230 W	PLASTIC/EPOXY		600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			15 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.5 ohm	15 A	SINGLE	R-PSFM-T3		Not Qualified
SSW4N80ATF	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	800 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	16 A	256 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				4 ohm	4 A	SINGLE	R-PSSO-G2	DRAIN	Not Qualified
SSH20N45A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY	SWITCHING	450 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	80 A	960 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	150 W	150 Cel	SILICON	410 ns	840 ns		.25 ohm	20 A	SINGLE	R-PSFM-T3		Not Qualified
SFF9240	Samsung	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY		200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	30 A	385 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR			SILICON				.5 ohm	7.6 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified
SSH70N10	Samsung	N-CHANNEL	SINGLE	NO	280 W	PLASTIC/EPOXY		100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			70 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.025 ohm	70 A	SINGLE	R-PSFM-T3		Not Qualified
SFW9530	Samsung	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	66 W	PLASTIC/EPOXY		100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	42 A	368 mJ	11 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				.3 ohm	10.5 A	SINGLE	R-PSSO-G2	DRAIN	Not Qualified
SSW7N60A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	147 W	PLASTIC/EPOXY		600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	28 A	535 mJ	7 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				1.2 ohm	7 A	SINGLE	R-PSSO-G2	DRAIN	Not Qualified
SSU3055A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	18 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	32 A	55 mJ	8 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.15 ohm	8 A	SINGLE	R-PSIP-T3		Not Qualified

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.