Samsung Power Field Effect Transistors (FET) 1,134

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Feedback Capacitance (Crss)
SFI9640	Samsung	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	123 W	PLASTIC/EPOXY		200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	44 A	807 mJ	11 A	3	IN-LINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.5 ohm	11 A	SINGLE	R-PSIP-T3		Not Qualified
SSP2N60A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	54 W	PLASTIC/EPOXY		600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	6 A	131 mJ	2 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				5 ohm	2 A	SINGLE	R-PSFM-T3		Not Qualified		TO-220AB
SSU1N50	Samsung	N-CHANNEL	SINGLE	NO	42 W	PLASTIC/EPOXY		500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			1.2 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				8.5 ohm	1.2 A	SINGLE	R-PSIP-T3		Not Qualified
SSU1N60	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	3 A		1 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	40 W	150 Cel	SILICON	35 ns	90 ns		12 ohm	1 A	SINGLE	R-PSIP-T3		Not Qualified				20 pF
SSH12N70	Samsung	N-CHANNEL	SINGLE	NO	280 W	PLASTIC/EPOXY		700 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			12 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.9 ohm	12 A	SINGLE	R-PSFM-T3		Not Qualified
IRFM110	Samsung	N-CHANNEL	SINGLE	YES	3.1 W	PLASTIC/EPOXY		100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			1.5 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.54 ohm	1.5 A	SINGLE	R-PSSO-G3		Not Qualified
SSF6N70A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	85 W	PLASTIC/EPOXY		700 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	24 A	538 mJ	5 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				1.8 ohm	5 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified
SSH8N60	Samsung	N-CHANNEL	SINGLE	NO	170 W	PLASTIC/EPOXY		600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			8 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				1 ohm	8 A	SINGLE	R-PSFM-T3		Not Qualified
SSU2N55	Samsung	N-CHANNEL	SINGLE	NO	42 W	PLASTIC/EPOXY		550 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			2 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				5 ohm	2 A	SINGLE	R-PSIP-T3		Not Qualified
SSS6N80A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	50 W	PLASTIC/EPOXY		800 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	24 A	457 mJ	3.5 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				2 ohm	3.5 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified
SSH5N80	Samsung	N-CHANNEL	SINGLE	NO	150 W	PLASTIC/EPOXY		800 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			5 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				2.5 ohm	5 A	SINGLE	R-PSFM-T3		Not Qualified
SFU9210	Samsung	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	19 W	PLASTIC/EPOXY		200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	6.4 A	119 mJ	1.6 A	3	IN-LINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				3 ohm	1.6 A	SINGLE	R-PSIP-T3		Not Qualified
SSW1N60A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	34 W	PLASTIC/EPOXY		600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	3 A	44 mJ	1 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				12 ohm	1 A	SINGLE	R-PSSO-G2	DRAIN	Not Qualified
SSH4N70A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	125 W	PLASTIC/EPOXY	SWITCHING	700 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	2.5 A	280 mJ	4 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	125 W	150 Cel	SILICON	210 ns	430 ns	TIN LEAD	2.5 ohm	4 A	SINGLE	R-PSFM-T3		Not Qualified			e0
SSH4N60	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	75 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	16 A	358 mJ	4 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	75 W	150 Cel	SILICON	190 ns	160 ns		3 ohm	4 A	SINGLE	R-PSFM-T3		Not Qualified				40 pF
SSP6N60	Samsung	N-CHANNEL	SINGLE	NO	125 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	24 A	570 mJ	6 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	125 W	150 Cel	SILICON	210 ns	320 ns		1.8 ohm	6 A	SINGLE	R-PSFM-T3		Not Qualified		TO-220AB		150 pF
SSS5N80A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY		800 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	20 A	336 mJ	3 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				2.2 ohm	3 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified
SSP1N50A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	36 W	PLASTIC/EPOXY		500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	5 A	113 mJ	1.5 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				5.5 ohm	1.5 A	SINGLE	R-PSFM-T3		Not Qualified		TO-220AB
SFR9214	Samsung	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	19 W	PLASTIC/EPOXY		250 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	6.1 A	102 mJ	1.5 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				4 ohm	1.53 A	SINGLE	R-PSSO-G2	DRAIN	Not Qualified
SFS9644	Samsung	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY		250 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	20 A	150 mJ	4.9 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.8 ohm	4.9 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified
SSP3055L	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	26 A		12 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	40 W	150 Cel	SILICON				.18 ohm	12 A	SINGLE	R-PSFM-T3		Not Qualified	LOGIC LEVEL COMPATIBLE	TO-220AB
SSH15N60A	Samsung	N-CHANNEL	SINGLE	NO		PLASTIC/EPOXY		600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1				3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR			SILICON				.45 ohm	15 A	SINGLE	R-PSFM-T3		Not Qualified
IRFWZ34A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	120 A	463 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				.04 ohm	30 A	SINGLE	R-PSSO-G2	DRAIN	Not Qualified
SSW6N70A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	130 W	PLASTIC/EPOXY		700 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	24 A	582 mJ	6 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				1.8 ohm	6 A	SINGLE	R-PSSO-G2	DRAIN	Not Qualified
SSH6N55	Samsung	N-CHANNEL	SINGLE	NO	125 W	PLASTIC/EPOXY	SWITCHING	550 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	24 A	570 mJ	6 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	125 W	150 Cel	SILICON	210 ns	320 ns		1.8 ohm	6 A	SINGLE	R-PSFM-T3		Not Qualified				150 pF
SFW9Z34	Samsung	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	82 W	PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	72 A	555 mJ	18 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				.14 ohm	18 A	SINGLE	R-PSSO-G2	DRAIN	Not Qualified
SSH10N70	Samsung	N-CHANNEL	SINGLE	NO	150 W	PLASTIC/EPOXY	SWITCHING	700 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	40 A	795 mJ	10 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 W	150 Cel	SILICON	410 ns	840 ns		1.2 ohm	10 A	SINGLE	R-PSFM-T3		Not Qualified
SSH10N70A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY	SWITCHING	700 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	40 A	795 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	150 W	150 Cel	SILICON	410 ns	840 ns		.9 ohm	10 A	SINGLE	R-PSFM-T3		Not Qualified
SSS3N90	Samsung	N-CHANNEL	SINGLE	NO	40 W	PLASTIC/EPOXY		900 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			2 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				4.5 ohm	2 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified		TO-220AB
SFW9Z14	Samsung	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	38 W	PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	27 A	115 mJ	6.7 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				.5 ohm	6.7 A	SINGLE	R-PSSO-G2	DRAIN	Not Qualified
SFU9224	Samsung	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY		250 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	10 A	156 mJ		3	IN-LINE		METAL-OXIDE SEMICONDUCTOR			SILICON				2.4 ohm	2.5 A	SINGLE	R-PSIP-T3		Not Qualified
SSP50N05	Samsung	N-CHANNEL	SINGLE	NO	170 W	PLASTIC/EPOXY		50 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			50 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.024 ohm	50 A	SINGLE	R-PSFM-T3		Not Qualified		TO-220AB
SFP9630	Samsung	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	70 W	PLASTIC/EPOXY		200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	26 A	563 mJ	6.5 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.8 ohm	6.5 A	SINGLE	R-PSFM-T3		Not Qualified		TO-220AB
IRFW634A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3.1 W	PLASTIC/EPOXY		250 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	32 A	205 mJ	8.1 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.45 ohm	8.1 A	SINGLE	R-PSSO-G2	DRAIN	Not Qualified
SSP5N90A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	140 W	PLASTIC/EPOXY		900 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	20 A	529 mJ	5 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				2.9 ohm	5 A	SINGLE	R-PSFM-T3		Not Qualified		TO-220AB
SSS10N60A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	50 W	PLASTIC/EPOXY		600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	21 A	709 mJ	5.1 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.8 ohm	5.1 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified
SFP9624	Samsung	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	38 W	PLASTIC/EPOXY		250 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	11 A	182 mJ	2.7 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				2.4 ohm	2.7 A	SINGLE	R-PSFM-T3		Not Qualified		TO-220AB
SSH17N60	Samsung	N-CHANNEL	SINGLE	NO	280 W	PLASTIC/EPOXY		600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			17 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.45 ohm	17 A	SINGLE	R-PSFM-T3		Not Qualified
SSH25N35A	Samsung	N-CHANNEL	SINGLE	NO		PLASTIC/EPOXY		350 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1				3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR			SILICON				.2 ohm	25 A	SINGLE	R-PSFM-T3		Not Qualified
SSP2N90A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	80 W	PLASTIC/EPOXY		900 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	8 A	212 mJ	2 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				7 ohm	2 A	SINGLE	R-PSFM-T3		Not Qualified		TO-220AB
SSW4N80AS	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	130 W	PLASTIC/EPOXY	SWITCHING	800 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	18 A	324 mJ	4.5 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				3 ohm	4.5 A	SINGLE	R-PSSO-G2	DRAIN	Not Qualified
SSH22N50	Samsung	N-CHANNEL	SINGLE	NO	280 W	PLASTIC/EPOXY		500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			22 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.25 ohm	22 A	SINGLE	R-PSFM-T3		Not Qualified
SSP45N20A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	176 W	PLASTIC/EPOXY		200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	140 A	653 mJ	35 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.065 ohm	35 A	SINGLE	R-PSFM-T3		Not Qualified		TO-220AB
SSR3055A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	18 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	32 A	55 mJ	8 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.15 ohm	8 A	SINGLE	R-PSSO-G2	DRAIN	Not Qualified
SSH8N70	Samsung	N-CHANNEL	SINGLE	NO	190 W	PLASTIC/EPOXY		700 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			8 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				1.4 ohm	8 A	SINGLE	R-PSFM-T3		Not Qualified
SSM20N45	Samsung	N-CHANNEL	SINGLE	NO	200 W						ENHANCEMENT MODE	1			20 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel						20 A
SSH4N70	Samsung	N-CHANNEL	SINGLE	NO	125 W	PLASTIC/EPOXY	SWITCHING	700 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	2.5 A	280 mJ	4 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	125 W	150 Cel	SILICON	210 ns	430 ns		3.5 ohm	4 A	SINGLE	R-PSFM-T3		Not Qualified
SSS4N70	Samsung	N-CHANNEL	SINGLE	NO	40 W	PLASTIC/EPOXY		700 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			2.3 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				3.5 ohm	2.3 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified		TO-220AB

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.