Samsung Power Field Effect Transistors (FET) 1,134

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Feedback Capacitance (Crss)
IRFIZ24A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	44 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	68 A	149 mJ	17 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				.07 ohm	17 A	SINGLE	R-PSIP-T3		Not Qualified
IRF342	Samsung	N-CHANNEL	SINGLE	NO	125 W						ENHANCEMENT MODE	1			8.3 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel				Tin/Lead (Sn/Pb)		8.3 A							e0
IRFI634A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	3.1 W	PLASTIC/EPOXY		250 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	32 A	205 mJ	8.1 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.45 ohm	8.1 A	SINGLE	R-PSIP-T3		Not Qualified
IRLS630	Samsung	N-CHANNEL	SINGLE	NO		PLASTIC/EPOXY	SWITCHING	200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1				3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR			SILICON				.6 ohm	5.1 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified	LOGIC LEVEL COMPATIBLE	TO-220AB
IRF9533	Samsung	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	75 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	40 A	550 mJ	10 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR	75 W	150 Cel	SILICON	200 ns	280 ns	TIN LEAD	.4 ohm	10 A	SINGLE	R-PSFM-T3		Not Qualified		TO-220AB	e0
IRF9511	Samsung	P-CHANNEL	SINGLE	NO	20 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	24 A	167 mJ	3 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR	20 W	150 Cel	SILICON	99 ns	80 ns		1.2 ohm	3 A	SINGLE	R-PSFM-T3		Not Qualified		TO-220AB
IRLR120	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	42 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	32 A		7.7 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	42 W	150 Cel	SILICON	42 ns	75 ns		.4 ohm	7.9 A	SINGLE	R-PSSO-G2		Not Qualified	LOGIC LEVEL COMPATIBLE
IRFU9015	Samsung	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	25 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	18 A	240 mJ	4.5 A	3	IN-LINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	25 W	150 Cel	SILICON	80 ns	79 ns		.7 ohm	4.5 A	SINGLE	R-PSIP-T3		Not Qualified
IRFS431	Samsung	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY		450 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1				3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR			SILICON				1.5 ohm	3.1 A	SINGLE	R-PSFM-G3	ISOLATED	Not Qualified
IRF830A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	73 W	PLASTIC/EPOXY		500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	18 A	338 mJ	4.5 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				1.5 ohm	4.5 A	SINGLE	R-PSFM-T3		Not Qualified		TO-220AB
IRL611	Samsung	N-CHANNEL	SINGLE	NO	25 W	PLASTIC/EPOXY	SWITCHING	150 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	8 A		2.6 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	25 W	150 Cel	SILICON	40 ns	30 ns		2.4 ohm	2.6 A	SINGLE	R-PSFM-T3		Not Qualified	LOGIC LEVEL COMPATIBLE	TO-220AB
IRF840A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	134 W	PLASTIC/EPOXY		500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	32 A	640 mJ	8 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	134 W	150 Cel	SILICON	100 ns	245 ns		.85 ohm	8 A	SINGLE	R-PSFM-T3		Not Qualified		TO-220AB		75 pF
IRLR221	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	42 W	PLASTIC/EPOXY	SWITCHING	150 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	16 A		4 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	42 W	150 Cel	SILICON	100 ns	115 ns		1.2 ohm	4 A	SINGLE	R-PSSO-G2		Not Qualified	LOGIC LEVEL COMPATIBLE
IRFU014A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	18 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	33 A	58 mJ	8.2 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.14 ohm	8.2 A	SINGLE	R-PSIP-T3		Not Qualified
IRFS723	Samsung	N-CHANNEL	SINGLE	NO	30 W	PLASTIC/EPOXY		350 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			2 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				2.5 ohm	2.5 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified		TO-220AB
IRFSZ30	Samsung	N-CHANNEL	SINGLE	NO	42 W	PLASTIC/EPOXY	SWITCHING	50 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	120 A	8 mJ	20 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	35 W	150 Cel	SILICON	131 ns	101 ns		.05 ohm	20 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified		TO-220AB
IRL530A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	62 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	49 A	261 mJ	14 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				.12 ohm	14 A	SINGLE	R-PSFM-T3		Not Qualified	LOGIC LEVEL COMPATIBLE	TO-220AB
IRLU130A	Samsung	N-CHANNEL	SINGLE	NO	46 W						ENHANCEMENT MODE	1			13 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel						13 A
IRFU430A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	48 W	PLASTIC/EPOXY		500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	14 A	340 mJ	3.5 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				1.5 ohm	3.5 A	SINGLE	R-PSIP-T3		Not Qualified
IRFR214	Samsung	N-CHANNEL	SINGLE	YES	25 W	PLASTIC/EPOXY		250 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			2.2 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				2 ohm	2.2 A	SINGLE	R-PSSO-G2		Not Qualified
IRFS730A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	38 W	PLASTIC/EPOXY	SWITCHING	400 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	22 A	348 mJ	3.9 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				1 ohm	3.9 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified
IRFR022-T1	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	50 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	56 A	9.5 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	42 W	150 Cel	SILICON	96 ns	63 ns		.12 ohm	14 A	SINGLE	R-PSSO-G2		Not Qualified
IRFR234A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	49 W	PLASTIC/EPOXY		250 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	26 A	191 mJ	6.6 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.45 ohm	6.6 A	SINGLE	R-PSSO-G2	DRAIN	Not Qualified
IRFZ25	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	60 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	56 A	9.5 mJ	14 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	40 W	175 Cel	SILICON	120 ns	70 ns	TIN LEAD	.12 ohm	14 A	SINGLE	R-PSFM-T3		Not Qualified		TO-220AB	e0
IRLS624	Samsung	N-CHANNEL	SINGLE	NO		PLASTIC/EPOXY	SWITCHING	250 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1				3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR			SILICON				1.3 ohm	3.2 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified	LOGIC LEVEL COMPATIBLE	TO-220AB
IRF9542	Samsung	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	125 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	60 A	560 mJ	15 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR	125 W	150 Cel	SILICON	45 ns	32 ns	TIN LEAD	.2 ohm	15 A	SINGLE	R-PSFM-T3		Not Qualified		TO-220AB	e0
IRLS511	Samsung	N-CHANNEL	SINGLE	NO		PLASTIC/EPOXY	SWITCHING	80 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1				3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR			SILICON				.75 ohm	3.6 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified	LOGIC LEVEL COMPATIBLE	TO-220AB
IRL541	Samsung	N-CHANNEL	SINGLE	NO	125 W	PLASTIC/EPOXY	SWITCHING	80 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	96 A		24 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	125 W	150 Cel	SILICON	140 ns	135 ns		.11 ohm	24 A	SINGLE	R-PSFM-T3		Not Qualified	LOGIC LEVEL COMPATIBLE	TO-220AB
IRF720A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	49 W	PLASTIC/EPOXY	SWITCHING	400 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	13 A	249 mJ	3.3 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				1.8 ohm	3.3 A	SINGLE	R-PSFM-T3		Not Qualified		TO-220AB
IRFS252	Samsung	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY		200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1				3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR			SILICON				.12 ohm	17.3 A	SINGLE	R-PSFM-G3	ISOLATED	Not Qualified
IRFP141	Samsung	N-CHANNEL	SINGLE	NO	150 W	PLASTIC/EPOXY	SWITCHING	80 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	110 A	230 mJ	29 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	125 W	150 Cel	SILICON	133 ns	135 ns		.077 ohm	28 A	SINGLE	R-PSFM-T3		Not Qualified
IRFZ24A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	44 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	68 A	149 mJ	17 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				.07 ohm	17 A	SINGLE	R-PSFM-T3		Not Qualified		TO-220AB
IRFU9211	Samsung	P-CHANNEL	SINGLE	NO	25 W	PLASTIC/EPOXY		150 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			2 A	3	IN-LINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				3 ohm	2 A	SINGLE	R-PSIP-T3		Not Qualified
IRLU034A	Samsung	N-CHANNEL	SINGLE	NO	42 W						ENHANCEMENT MODE	1			23 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel						23 A
IRFS523	Samsung	N-CHANNEL	SINGLE	NO		PLASTIC/EPOXY		80 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1				3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR			SILICON				.36 ohm	8 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified		TO-220AB
IRF9633	Samsung	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	75 W	PLASTIC/EPOXY	SWITCHING	150 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	22 A	260 mJ	3 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR	75 W	150 Cel	SILICON	150 ns	180 ns	TIN LEAD	1.2 ohm	5.5 A	SINGLE	R-PSFM-T3		Not Qualified		TO-220AB	e0
IRFIZ20	Samsung	N-CHANNEL	SINGLE	NO	60 W	PLASTIC/EPOXY		50 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			15 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				.1 ohm	15 A	SINGLE	R-PSIP-T3		Not Qualified
IRFS732	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	35 W	PLASTIC/EPOXY	SWITCHING	400 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	18 A	117 mJ	3 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	35 W	150 Cel	SILICON	46 ns	80 ns		1.5 ohm	3 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified		TO-220AB
IRFS841	Samsung	N-CHANNEL	SINGLE	NO	40 W	PLASTIC/EPOXY	SWITCHING	450 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	32 A	161 mJ	4.5 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	40 W	150 Cel	SILICON	56 ns	104 ns		.85 ohm	4.6 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified		TO-220AB
IRLSZ24A	Samsung	N-CHANNEL	SINGLE	NO	31 W						ENHANCEMENT MODE	1			14 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel						14 A
IRFU320A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	41 W	PLASTIC/EPOXY		400 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	12 A	220 mJ	3.1 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				1.8 ohm	3.1 A	SINGLE	R-PSIP-T3		Not Qualified
IRF713	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	36 W	PLASTIC/EPOXY	SWITCHING	350 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	4.3 A	120 mJ	1.7 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	36 W	150 Cel	SILICON	27 ns	49 ns	TIN LEAD	5 ohm	1.7 A	SINGLE	R-PSFM-T3		Not Qualified		TO-220AB	e0
IRFS9531	Samsung	P-CHANNEL	SINGLE	NO	35 W	PLASTIC/EPOXY		60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			8 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.3 ohm	8 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified		TO-220AB
IRLM220A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY		200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	9 A	29 mJ	1.1 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.8 ohm	1.13 A	DUAL	R-PDSO-G4	DRAIN	Not Qualified		TO-261AA
IRFR222-T1	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	15 A	50 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	42 W	150 Cel	SILICON	54 ns	53 ns		1.2 ohm	3.8 A	SINGLE	R-PSSO-G2		Not Qualified
IRF740A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	125 W	PLASTIC/EPOXY		400 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	40 A	457 mJ	10 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	134 W	150 Cel	SILICON	105 ns	235 ns		.55 ohm	10 A	SINGLE	R-PSFM-T3		Not Qualified		TO-220AB		95 pF
IRFR330A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	48 W	PLASTIC/EPOXY		400 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	18 A	347 mJ	4.5 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				1 ohm	4.5 A	SINGLE	R-PSSO-G2	DRAIN	Not Qualified
IRFS640	Samsung	N-CHANNEL	SINGLE	NO	40 W	PLASTIC/EPOXY		200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			9.8 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.18 ohm	9.8 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified		TO-220AB

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.