Samsung Power Field Effect Transistors (FET) 1,134

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Feedback Capacitance (Crss)
IRLU024	Samsung	N-CHANNEL	SINGLE	NO	42 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	52 A		14 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	42 W	150 Cel	SILICON	120 ns	70 ns		.15 ohm	14 A	SINGLE	R-PSIP-T3		Not Qualified	LOGIC LEVEL COMPATIBLE
IRFR120-T1	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	34 A	30 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	42 W	150 Cel	SILICON	58 ns	59 ns		.27 ohm	8.4 A	SINGLE	R-PSSO-G2		Not Qualified
IRFS250	Samsung	N-CHANNEL	SINGLE	NO	96 W	PLASTIC/EPOXY		200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			20.7 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.085 ohm	20.7 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified
IRFR312	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	400 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	3 A	60 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	25 W	150 Cel	SILICON	27 ns	49 ns		5 ohm	1 A	SINGLE	R-PSSO-G2		Not Qualified
IRFR9121-T1	Samsung	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	80 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	24 A	370 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	42 W	150 Cel	SILICON	79 ns	48 ns		.6 ohm	5.9 A	SINGLE	R-PSSO-G2		Not Qualified
IRFS9521	Samsung	P-CHANNEL	SINGLE	NO		PLASTIC/EPOXY		60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1				3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR			SILICON				.6 ohm	6 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified		TO-220AB
IRFR025	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	42 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	56 A	9.5 mJ	14 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	42 W	150 Cel	SILICON			TIN LEAD	.12 ohm	14 A	SINGLE	R-PSSO-G2		Not Qualified			e0
IRF710A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	36 W	PLASTIC/EPOXY	SWITCHING	400 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	6 A	114 mJ	2 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				3.6 ohm	2 A	SINGLE	R-PSFM-T3		Not Qualified		TO-220AB
IRLS610	Samsung	N-CHANNEL	SINGLE	NO		PLASTIC/EPOXY	SWITCHING	200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1				3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR			SILICON				2.4 ohm	2.1 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified	LOGIC LEVEL COMPATIBLE	TO-220AB
IRF520A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	37 A	113 mJ	9.2 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				.2 ohm	9.2 A	SINGLE	R-PSFM-T3		Not Qualified		TO-220AB
IRFS132	Samsung	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY		100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1				3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR			SILICON				.23 ohm	8.3 A	SINGLE	R-PSFM-G3	ISOLATED	Not Qualified
IRFU024	Samsung	N-CHANNEL	SINGLE	NO	42 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	60 A	9.5 mJ	15 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	42 W	150 Cel	SILICON				.1 ohm	15 A	SINGLE	R-PSIP-T3		Not Qualified
IRFI520A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	3.8 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	37 A	113 mJ	9.2 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				.2 ohm	9.2 A	SINGLE	R-PSIP-T3		Not Qualified
IRFS9233	Samsung	P-CHANNEL	SINGLE	YES		PLASTIC/EPOXY		150 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1				3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR			SILICON				1.2 ohm	3.8 A	SINGLE	R-PSFM-G3	ISOLATED	Not Qualified
IRF422	Samsung	N-CHANNEL	SINGLE	NO	50 W						ENHANCEMENT MODE	1			2.2 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel				Tin/Lead (Sn/Pb)		2.2 A							e0
IRLR110A	Samsung	N-CHANNEL	SINGLE	YES	22 W						ENHANCEMENT MODE	1			4.7 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel						4.7 A
IRFI550A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	3.8 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	160 A	640 mJ	40 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				.04 ohm	40 A	SINGLE	R-PSIP-T3		Not Qualified
IRFS9242	Samsung	P-CHANNEL	SINGLE	YES		PLASTIC/EPOXY		200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1				3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR			SILICON				.7 ohm	6.2 A	SINGLE	R-PSFM-G3	ISOLATED	Not Qualified
IRFS9643	Samsung	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	36 A	120 mJ	5 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR	40 W	150 Cel	SILICON	45 ns	30 ns		.7 ohm	5 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified		TO-220AB
IRFSZ42	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	65 W	PLASTIC/EPOXY	SWITCHING	50 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	100 A	48 mJ	30 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	65 W	150 Cel	SILICON	242 ns	205 ns		.035 ohm	30 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified		TO-220AB
IRFR110A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	20 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	19 A	59 mJ	4.7 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.4 ohm	4.7 A	SINGLE	R-PSSO-G2	DRAIN	Not Qualified
IRFS740A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	44 W	PLASTIC/EPOXY		400 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	40 A	557 mJ	5.7 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	44 W	150 Cel	SILICON	105 ns	235 ns		.55 ohm	5.7 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified				95 pF
IRFP333	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	75 W	PLASTIC/EPOXY	SWITCHING	350 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	18 A	290 mJ	4.5 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	75 W	150 Cel	SILICON	46 ns	80 ns		1.5 ohm	4.5 A	SINGLE	R-PSFM-T3		Not Qualified
IRFS150	Samsung	N-CHANNEL	SINGLE	NO	96 W	PLASTIC/EPOXY		100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			27.7 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.055 ohm	27.5 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified
IRLU110A	Samsung	N-CHANNEL	SINGLE	NO	22 W						ENHANCEMENT MODE	1			4.7 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel						4.7 A
IRFS441	Samsung	N-CHANNEL	SINGLE	NO	83 W	PLASTIC/EPOXY		450 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			5.5 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.85 ohm	5.5 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified
IRFI740A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	3.1 W	PLASTIC/EPOXY		400 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	40 A	457 mJ	10 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.55 ohm	10 A	SINGLE	R-PSIP-T3		Not Qualified
IRF323	Samsung	N-CHANNEL	SINGLE	NO	50 W						ENHANCEMENT MODE	1			2.8 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel				Tin/Lead (Sn/Pb)		2.8 A							e0
IRF9641	Samsung	P-CHANNEL	SINGLE	NO	125 W	PLASTIC/EPOXY	SWITCHING	150 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	44 A	380 mJ	11 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR	125 W	150 Cel	SILICON	45 ns	30 ns		.5 ohm	11 A	SINGLE	R-PSFM-T3		Not Qualified		TO-220AB
IRFR210	Samsung	N-CHANNEL	SINGLE	YES	25 W	PLASTIC/EPOXY	SWITCHING	200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	11 A	31 mJ	2.6 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	25 W	150 Cel	SILICON	42 ns	56 ns		1.5 ohm	2.7 A	SINGLE	R-PSSO-G2		Not Qualified
IRFIZ44	Samsung	N-CHANNEL	SINGLE	NO	150 W	PLASTIC/EPOXY		60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			50 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				.028 ohm	35 A	SINGLE	R-PSIP-T3		Not Qualified
IRF650A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	156 W	PLASTIC/EPOXY		200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	112 A	523 mJ	28 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.085 ohm	28 A	SINGLE	R-PSFM-T3		Not Qualified		TO-220AB
IRL631	Samsung	N-CHANNEL	SINGLE	NO	75 W	PLASTIC/EPOXY	SWITCHING	150 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	32 A		8 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	75 W	150 Cel	SILICON	80 ns	90 ns		.6 ohm	8 A	SINGLE	R-PSFM-T3		Not Qualified	LOGIC LEVEL COMPATIBLE	TO-220AB
IRLSZ40	Samsung	N-CHANNEL	SINGLE	NO		PLASTIC/EPOXY	SWITCHING	50 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1				3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR			SILICON				.04 ohm	23 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified	LOGIC LEVEL COMPATIBLE	TO-220AB
IRFU9111	Samsung	P-CHANNEL	SINGLE	NO	25 W	PLASTIC/EPOXY		80 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			3.2 A	3	IN-LINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				1.2 ohm	3.2 A	SINGLE	R-PSIP-T3		Not Qualified
IRFS9631	Samsung	P-CHANNEL	SINGLE	NO	35 W	PLASTIC/EPOXY		150 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			4.4 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				1.8 ohm	4.4 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified		TO-220AB
IRFP140A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	131 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	120 A	513 mJ	31 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.052 ohm	31 A	SINGLE	R-PSIP-T3		Not Qualified
IRFU312	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY	SWITCHING	400 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	3 A	60 mJ		3	IN-LINE		METAL-OXIDE SEMICONDUCTOR	25 W	150 Cel	SILICON	27 ns	49 ns		5 ohm	1 A	SINGLE	R-PSIP-T3		Not Qualified
IRFS232	Samsung	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY		200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1				3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR			SILICON				.6 ohm	5.5 A	SINGLE	R-PSFM-G3	ISOLATED	Not Qualified
IRFI620A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	3.1 W	PLASTIC/EPOXY		200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	18 A	67 mJ	5 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.8 ohm	5 A	SINGLE	R-PSIP-T3		Not Qualified
IRFP131	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	77 W	PLASTIC/EPOXY	SWITCHING	80 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	56 A	69 mJ	14 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	77 W	150 Cel	SILICON	66 ns	71 ns		.16 ohm	14 A	SINGLE	R-PSFM-T3		Not Qualified
IRFS520	Samsung	N-CHANNEL	SINGLE	NO	30 W	PLASTIC/EPOXY		100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			7.2 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.27 ohm	7.2 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified		TO-220AB
IRF121	Samsung	N-CHANNEL	SINGLE	NO	40 W						ENHANCEMENT MODE	1			8 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel				Tin/Lead (Sn/Pb)		8 A							e0
IRFS341	Samsung	N-CHANNEL	SINGLE	NO	83 W	PLASTIC/EPOXY		350 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			6.9 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.55 ohm	6.9 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified
IRL610	Samsung	N-CHANNEL	SINGLE	NO	25 W	PLASTIC/EPOXY	SWITCHING	200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	8 A		2.6 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	25 W	150 Cel	SILICON	40 ns	30 ns		2.4 ohm	2.6 A	SINGLE	R-PSFM-T3		Not Qualified	LOGIC LEVEL COMPATIBLE	TO-220AB
IRFR120A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	32 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	34 A	141 mJ	8.4 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.2 ohm	8.4 A	SINGLE	R-PSSO-G2	DRAIN	Not Qualified
SSR1N50	Samsung	N-CHANNEL	SINGLE	YES	42 W	PLASTIC/EPOXY		500 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			1.2 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				8.5 ohm	1.2 A	SINGLE	R-PSSO-G2		Not Qualified
IRFR9014-T1	Samsung	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	21 A	240 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	25 W	150 Cel	SILICON	80.2 ns	79 ns		.5 ohm	5.3 A	SINGLE	R-PSSO-G2		Not Qualified

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.