Samsung Power Field Effect Transistors (FET) 1,134

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Feedback Capacitance (Crss)
IRF421	Samsung	N-CHANNEL	SINGLE	NO	50 W						ENHANCEMENT MODE	1			2.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel				Tin/Lead (Sn/Pb)		2.5 A							e0
IRFS9630	Samsung	P-CHANNEL	SINGLE	NO	35 W	PLASTIC/EPOXY		200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			4.4 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				1.8 ohm	4.4 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified		TO-220AB
IRFS543	Samsung	N-CHANNEL	SINGLE	NO		PLASTIC/EPOXY		80 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1				3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR			SILICON				.1 ohm	25 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified		TO-220AB
IRFU322	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	50 W	PLASTIC/EPOXY	SWITCHING	400 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	9 A	16 mJ	2.6 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	42 W	150 Cel	SILICON	35 ns	65 ns	TIN LEAD	2.5 ohm	2.3 A	SINGLE	R-PSIP-T3		Not Qualified			e0
IRFS9542	Samsung	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	60 A	170 mJ	8.4 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR	40 W	150 Cel	SILICON	45 ns	32 ns		.3 ohm	8.4 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified		TO-220AB
IRLS641	Samsung	N-CHANNEL	SINGLE	NO		PLASTIC/EPOXY	SWITCHING	150 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1				3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR			SILICON				.22 ohm	9 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified	LOGIC LEVEL COMPATIBLE	TO-220AB
IRF620A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	47 W	PLASTIC/EPOXY		200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	18 A	67 mJ	5 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.8 ohm	5 A	SINGLE	R-PSFM-T3		Not Qualified		TO-220AB
IRFR025-T1	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	56 A	9.5 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	42 W	150 Cel	SILICON	96 ns	63 ns		.12 ohm	14 A	SINGLE	R-PSSO-G2		Not Qualified
IRFP350A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY		400 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	68 A	495 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR			SILICON				.3 ohm	17 A	SINGLE	R-PSFM-T3		Not Qualified
IRFR422	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	500 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	7 A	210 mJ	2.2 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	42 W	150 Cel	SILICON	33 ns	60 ns		4 ohm	2.2 A	SINGLE	R-PSSO-G2		Not Qualified
IRFP9133	Samsung	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	75 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	40 A	550 mJ	10 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR	75 W	150 Cel	SILICON	200 ns	280 ns		.4 ohm	10 A	SINGLE	R-PSFM-T3		Not Qualified
IRF9621	Samsung	P-CHANNEL	SINGLE	NO	40 W	PLASTIC/EPOXY	SWITCHING	150 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	14 A	270 mJ	2 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR	40 W	150 Cel	SILICON	90 ns	90 ns		1.5 ohm	3.5 A	SINGLE	R-PSFM-T3		Not Qualified		TO-220AB
IRFZ34	Samsung	N-CHANNEL	SINGLE	NO	88 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	120 A	19 mJ	30 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	90 W	175 Cel	SILICON	131 ns	133 ns		.05 ohm	30 A	SINGLE	R-PSFM-T3		Not Qualified		TO-220AB
IRFR024-T1	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	60 A	9.5 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	42 W	150 Cel	SILICON	96 ns	63 ns		.1 ohm	15 A	SINGLE	R-PSSO-G2		Not Qualified
IRFR9110	Samsung	P-CHANNEL	SINGLE	YES	25 W	PLASTIC/EPOXY		100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			3.1 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				1.2 ohm	3.2 A	SINGLE	R-PSSO-G2		Not Qualified
IRFS750A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	49 W	PLASTIC/EPOXY	SWITCHING	400 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	60 A	1210 mJ	8.4 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.3 ohm	8.4 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified
IRF624	Samsung	N-CHANNEL	SINGLE	NO	50 W	PLASTIC/EPOXY	SWITCHING	250 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	15 A	110 mJ	4.4 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	40 W	150 Cel	SILICON	53 ns	52 ns		1.1 ohm	3.8 A	SINGLE	R-PSFM-T3		Not Qualified		TO-220AB
IRF9522	Samsung	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	20 A	380 mJ	5 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR	40 W	150 Cel	SILICON	150 ns	115 ns	TIN LEAD	.6 ohm	5 A	SINGLE	R-PSFM-T3		Not Qualified		TO-220AB	e0
IRFR411	Samsung	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY		450 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1				2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				10 ohm	.5 A	SINGLE	R-PSSO-G2		Not Qualified
IRFR210-T1	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	11 A	31 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	25 W	150 Cel	SILICON	42 ns	56 ns		1.5 ohm	2.7 A	SINGLE	R-PSSO-G2		Not Qualified
IRFU214A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	25 W	PLASTIC/EPOXY		250 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	8.5 A	61 mJ	2.2 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				2 ohm	2.2 A	SINGLE	R-PSIP-T3		Not Qualified
SSR1N55	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	40 W	PLASTIC/EPOXY	SWITCHING	550 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	3 A		1 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	40 W	150 Cel	SILICON	35 ns	90 ns		12 ohm	1 A	SINGLE	R-PSSO-G2		Not Qualified				20 pF
IRFI640A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	3.1 W	PLASTIC/EPOXY		200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	7.2 A	216 mJ	18 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.18 ohm	18 A	SINGLE	R-PSIP-T3		Not Qualified
IRL510A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	37 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	20 A	62 mJ	5.6 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				.44 ohm	5.6 A	SINGLE	R-PSFM-T3		Not Qualified	LOGIC LEVEL COMPATIBLE	TO-220AB
IRFU9020	Samsung	P-CHANNEL	SINGLE	NO	42 W	PLASTIC/EPOXY	SWITCHING	50 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	40 A	440 mJ	9.9 A	3	IN-LINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	42 W	150 Cel	SILICON				.28 ohm	9.9 A	SINGLE	R-PSIP-T3		Not Qualified
IRLU014A	Samsung	N-CHANNEL	SINGLE	NO	18 W						ENHANCEMENT MODE	1			8.2 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel						8.2 A
IRF231	Samsung	N-CHANNEL	SINGLE	NO	75 W						ENHANCEMENT MODE	1			9 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel				Tin/Lead (Sn/Pb)		9 A							e0
IRFR9024-T1	Samsung	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	40 A	440 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	42 W	150 Cel	SILICON	98 ns	56 ns		.29 ohm	9.9 A	SINGLE	R-PSSO-G2		Not Qualified
IRFS244A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	73 W	PLASTIC/EPOXY		250 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	41 A	455 mJ	10 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.28 ohm	10.2 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified
IRFS9Z30	Samsung	P-CHANNEL	SINGLE	NO	42 W	PLASTIC/EPOXY		50 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			12 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				.14 ohm	12 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified		TO-220AB
IRLSZ30	Samsung	N-CHANNEL	SINGLE	NO		PLASTIC/EPOXY	SWITCHING	50 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1				3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR			SILICON				.07 ohm	16 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified	LOGIC LEVEL COMPATIBLE	TO-220AB
IRFS9532	Samsung	P-CHANNEL	SINGLE	NO		PLASTIC/EPOXY		100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1				3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR			SILICON				.4 ohm	10 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified		TO-220AB
IRFSZ32	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	35 W	PLASTIC/EPOXY	SWITCHING	50 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	100 A	8 mJ	15.6 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	35 W	150 Cel	SILICON	131 ns	101 ns		.07 ohm	15.6 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified		TO-220AB
IRF123	Samsung	N-CHANNEL	SINGLE	NO	40 W						ENHANCEMENT MODE	1			7 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel				Tin/Lead (Sn/Pb)		7 A							e0
IRLS541	Samsung	N-CHANNEL	SINGLE	NO		PLASTIC/EPOXY	SWITCHING	80 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1				3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR			SILICON				.11 ohm	12.7 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified	LOGIC LEVEL COMPATIBLE	TO-220AB
IRFP9241	Samsung	P-CHANNEL	SINGLE	NO	150 W	PLASTIC/EPOXY	SWITCHING	150 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	44 A	380 mJ	12 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR	125 W	150 Cel	SILICON	45 ns	30 ns		.5 ohm	11 A	SINGLE	R-PSFM-T3		Not Qualified
IRFP9142	Samsung	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	60 A	560 mJ	16 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR	125 W	150 Cel	SILICON	45 ns	32 ns	TIN LEAD	.2 ohm	15 A	SINGLE	R-PSFM-T3		Not Qualified			e0
IRFS243	Samsung	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY		150 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1				3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR			SILICON				.22 ohm	11 A	SINGLE	R-PSFM-G3	ISOLATED	Not Qualified
IRFI830A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	3.1 W	PLASTIC/EPOXY		500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	18 A	338 mJ	4.5 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				1.5 ohm	4.5 A	SINGLE	R-PSIP-T3		Not Qualified
IRFR214A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	25 W	PLASTIC/EPOXY		250 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	8.5 A	61 mJ	2.2 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				2 ohm	2.2 A	SINGLE	R-PSSO-G2	DRAIN	Not Qualified
IRFS9240	Samsung	P-CHANNEL	SINGLE	NO	86 W	PLASTIC/EPOXY		200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			7.6 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.5 ohm	7.6 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified
SSR1N50A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	26 W	PLASTIC/EPOXY		500 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	5 A	113 mJ	1.3 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				5.5 ohm	1.3 A	SINGLE	R-PSSO-G2	DRAIN	Not Qualified
IRFS150A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	100 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	124 A	641 mJ	31 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.04 ohm	31 A	SINGLE	R-PSIP-T3		Not Qualified
IRFS642	Samsung	N-CHANNEL	SINGLE	NO		PLASTIC/EPOXY		200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1				3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR			SILICON				.22 ohm	16 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified		TO-220AB
IRFS654A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	50 W	PLASTIC/EPOXY		250 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	48 A	720 mJ	12 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.14 ohm	12 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified
IRFR034A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	40 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	92 A	453 mJ	23 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.04 ohm	23 A	SINGLE	R-PSSO-G2	DRAIN	Not Qualified
IRFP133	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	77 W	PLASTIC/EPOXY	SWITCHING	80 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	48 A	69 mJ	12 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	77 W	150 Cel	SILICON	66 ns	71 ns		.23 ohm	12 A	SINGLE	R-PSFM-T3		Not Qualified
IRFP440A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	162 W	PLASTIC/EPOXY		500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	34 A	602 mJ	8.5 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	162 W	150 Cel	SILICON	100 ns	245 ns		.85 ohm	8.5 A	SINGLE	R-PSFM-T3		Not Qualified				75 pF

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.