Samsung Power Field Effect Transistors (FET) 1,134

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code
IRFR9111	Samsung	P-CHANNEL	SINGLE	YES	25 W	PLASTIC/EPOXY		80 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			3.2 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				1.2 ohm	3.2 A	SINGLE	R-PSSO-G2		Not Qualified
IRF614	Samsung	N-CHANNEL	SINGLE	NO	36 W	PLASTIC/EPOXY		250 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			2.7 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				2 ohm	2.8 A	SINGLE	R-PSFM-T3		Not Qualified		TO-220AB
IRLS540A	Samsung	N-CHANNEL	SINGLE	NO	44 W						ENHANCEMENT MODE	1			17 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel						17 A
IRF333	Samsung	N-CHANNEL	SINGLE	NO	75 W						ENHANCEMENT MODE	1			4.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel				Tin/Lead (Sn/Pb)		4.5 A							e0
IRF614A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY		250 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	8.5 A	49 mJ	2.8 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				2 ohm	2.8 A	SINGLE	R-PSFM-T3		Not Qualified		TO-220AB
IRFU311	Samsung	N-CHANNEL	SINGLE	NO	25 W	PLASTIC/EPOXY		350 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			1.7 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				3.6 ohm	1.7 A	SINGLE	R-PSIP-T3		Not Qualified
IRFS450	Samsung	N-CHANNEL	SINGLE	NO	96 W	PLASTIC/EPOXY		500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			9 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.4 ohm	9 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified
IRFR9020	Samsung	P-CHANNEL	SINGLE	YES	42 W	PLASTIC/EPOXY	SWITCHING	50 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	40 A	440 mJ	9.9 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	42 W	150 Cel	SILICON				.28 ohm	9.9 A	SINGLE	R-PSSO-G2		Not Qualified
IRF750A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	156 W	PLASTIC/EPOXY	SWITCHING	400 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	60 A	1157 mJ	15 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.3 ohm	15 A	SINGLE	R-PSFM-T3		Not Qualified		TO-220AB
IRFS231	Samsung	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY		150 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1				3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR			SILICON				.4 ohm	6.2 A	SINGLE	R-PSFM-G3	ISOLATED	Not Qualified
IRFU014	Samsung	N-CHANNEL	SINGLE	NO	25 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	33 A	1.4 mJ	7.7 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	25 W	150 Cel	SILICON	67 ns	53 ns		.2 ohm	8.2 A	SINGLE	R-PSIP-T3		Not Qualified
IRFS343	Samsung	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY		350 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1				3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR			SILICON				.8 ohm	5.5 A	SINGLE	R-PSFM-G3	ISOLATED	Not Qualified
IRFZ30	Samsung	N-CHANNEL	SINGLE	NO	75 W	PLASTIC/EPOXY	SWITCHING	50 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	120 A	19 mJ	30 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	90 W	175 Cel	SILICON	131 ns	133 ns		.05 ohm	30 A	SINGLE	R-PSFM-T3		Not Qualified		TO-220AB
IRF322	Samsung	N-CHANNEL	SINGLE	NO	50 W						ENHANCEMENT MODE	1			2.8 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel				Tin/Lead (Sn/Pb)		2.8 A							e0
IRFU214	Samsung	N-CHANNEL	SINGLE	NO	25 W	PLASTIC/EPOXY		250 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			2.2 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				2 ohm	2.2 A	SINGLE	R-PSIP-T3		Not Qualified
IRFS9143	Samsung	P-CHANNEL	SINGLE	YES		PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1				3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR			SILICON				.3 ohm	10.4 A	SINGLE	R-PSFM-G3	ISOLATED	Not Qualified
IRL520A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	49 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	32 A	112 mJ	9.2 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				.22 ohm	9.2 A	SINGLE	R-PSFM-T3		Not Qualified	LOGIC LEVEL COMPATIBLE	TO-220AB
IRFU130A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	41 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	52 A	225 mJ	13 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.11 ohm	13 A	SINGLE	R-PSIP-T3		Not Qualified
IRF633	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	75 W	PLASTIC/EPOXY	SWITCHING	150 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	32 A	170 mJ	8 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	75 W	150 Cel	SILICON	80 ns	90 ns	TIN LEAD	.6 ohm	8 A	SINGLE	R-PSFM-T3		Not Qualified		TO-220AB	e0
IRFU9010	Samsung	P-CHANNEL	SINGLE	NO	25 W	PLASTIC/EPOXY	SWITCHING	50 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	21 A	240 mJ	5.3 A	3	IN-LINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	25 W	150 Cel	SILICON	80 ns	79 ns		.5 ohm	5.3 A	SINGLE	R-PSIP-T3		Not Qualified
IRFS9642	Samsung	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	36 A	120 mJ	5 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR	40 W	150 Cel	SILICON	45 ns	30 ns		.7 ohm	5 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified		TO-220AB
IRLR010	Samsung	N-CHANNEL	SINGLE	YES	25 W	PLASTIC/EPOXY	SWITCHING	50 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	27 A		6.7 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	25 W	150 Cel	SILICON	70 ns	90 ns		.3 ohm	6.7 A	SINGLE	R-PSSO-G2		Not Qualified	LOGIC LEVEL COMPATIBLE
IRLSZ20	Samsung	N-CHANNEL	SINGLE	NO		PLASTIC/EPOXY	SWITCHING	50 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1				3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR			SILICON				.15 ohm	10.3 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified	LOGIC LEVEL COMPATIBLE	TO-220AB
IRFS821	Samsung	N-CHANNEL	SINGLE	NO	30 W	PLASTIC/EPOXY		450 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			2 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				3 ohm	2.1 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified		TO-220AB
IRFS450A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	96 W	PLASTIC/EPOXY		500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	39 A	1024 mJ	9.6 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.4 ohm	9.6 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified
IRFS442	Samsung	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY		500 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1				3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR			SILICON				1.1 ohm	4.8 A	SINGLE	R-PSFM-G3	ISOLATED	Not Qualified
IRFS241	Samsung	N-CHANNEL	SINGLE	NO	83 W	PLASTIC/EPOXY		150 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			12.5 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.18 ohm	12.5 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified
IRFS830A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	38 W	PLASTIC/EPOXY		500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	12 A	374 mJ	3.1 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				1.5 ohm	3.1 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified
IRFS842	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	28 A	161 mJ	4 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	40 W	150 Cel	SILICON	56 ns	104 ns		1.1 ohm	4 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified		TO-220AB
IRFU9014	Samsung	P-CHANNEL	SINGLE	NO	25 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	21 A	240 mJ	5.1 A	3	IN-LINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	25 W	150 Cel	SILICON	80 ns	79 ns		.5 ohm	5.3 A	SINGLE	R-PSIP-T3		Not Qualified
IRFSZ45	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	65 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	100 A	48 mJ	30 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	65 W	150 Cel	SILICON	242 ns	205 ns		.035 ohm	30 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified		TO-220AB
IRFP322	Samsung	N-CHANNEL	SINGLE	NO	40 W						ENHANCEMENT MODE	1			2.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel						2.5 A
IRFSZ40	Samsung	N-CHANNEL	SINGLE	NO	48 W	PLASTIC/EPOXY	SWITCHING	50 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	120 A	48 mJ	28 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	65 W	150 Cel	SILICON	242 ns	205 ns		.028 ohm	28 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified		TO-220AB
IRF9610	Samsung	P-CHANNEL	SINGLE	NO	20 W	PLASTIC/EPOXY	SWITCHING	200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	7 A	110 mJ	1.8 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR	20 W	150 Cel	SILICON	40 ns	30 ns		3 ohm	1.75 A	SINGLE	R-PSFM-T3		Not Qualified		TO-220AB
IRFS153	Samsung	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY		80 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1				3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR			SILICON				.08 ohm	23.5 A	SINGLE	R-PSFM-G3	ISOLATED	Not Qualified
IRFP342	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	PLASTIC/EPOXY	SWITCHING	400 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	33 A	520 mJ	8.4 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	125 W	150 Cel	SILICON	62 ns	111 ns		.8 ohm	8.3 A	SINGLE	R-PSFM-T3		Not Qualified
IRFR230A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY		200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	30 A	150 mJ	7.5 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.4 ohm	7.5 A	SINGLE	R-PSSO-G2	DRAIN	Not Qualified
IRFZ45	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	190 A	53 mJ	35 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 W	175 Cel	SILICON	242 ns	205 ns	TIN LEAD	.035 ohm	35 A	SINGLE	R-PSFM-T3		Not Qualified		TO-220AB	e0
IRFS740	Samsung	N-CHANNEL	SINGLE	NO	40 W	PLASTIC/EPOXY	SWITCHING	400 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	40 A	157 mJ	5.5 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	40 W	150 Cel	SILICON	62 ns	111 ns		.55 ohm	5.4 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified		TO-220AB
IRFP432	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	75 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	16 A	280 mJ	4 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	75 W	150 Cel	SILICON	40 ns	76 ns		2 ohm	4 A	SINGLE	R-PSFM-T3		Not Qualified
IRLSZ44	Samsung	N-CHANNEL	SINGLE	NO		PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1				3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR			SILICON				.04 ohm	23 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified	LOGIC LEVEL COMPATIBLE	TO-220AB
IRLSZ14	Samsung	N-CHANNEL	SINGLE	NO		PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1				3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR			SILICON				.3 ohm	6.5 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified	LOGIC LEVEL COMPATIBLE	TO-220AB
IRLU230A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	48 W	PLASTIC/EPOXY		200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	26 A	37 mJ	7.5 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.4 ohm	7.5 A	SINGLE	R-PSIP-T3		Not Qualified
IRF9Z24	Samsung	P-CHANNEL	SINGLE	NO	60 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	39 A	4.2 mJ	11 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR	40 W	150 Cel	SILICON	98 ns	56 ns		.28 ohm	9.7 A	SINGLE	R-PSFM-T3		Not Qualified		TO-220AB
IRFS550A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	46 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	84 A	588 mJ	21 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				.04 ohm	21 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified
IRF443	Samsung	N-CHANNEL	SINGLE	NO	125 W						ENHANCEMENT MODE	1			7 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel				Tin/Lead (Sn/Pb)		7 A							e0
IRFR211	Samsung	N-CHANNEL	SINGLE	YES	25 W	PLASTIC/EPOXY		150 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			2.7 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				1.5 ohm	2.7 A	SINGLE	R-PSSO-G2		Not Qualified
IRFR110	Samsung	N-CHANNEL	SINGLE	YES	25 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	17 A	13 mJ	4.3 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	25 W	150 Cel	SILICON	47 ns	42 ns		.54 ohm	4.7 A	SINGLE	R-PSSO-G2		Not Qualified

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.