Power Field Effect Transistors (FET)

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
SIR826ADP-T1-GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	80 V	C BEND	RECTANGULAR	ENHANCEMENT MODE	1	100 A	61 mJ		5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				MATTE TIN	.0059 ohm	60 A	DUAL	R-PDSO-C5	1	DRAIN				e3	30	260
SIR870DP-T1-GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	104 W	PLASTIC/EPOXY	SWITCHING	100 V	C BEND	RECTANGULAR	ENHANCEMENT MODE	1	100 A	61 mJ	60 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.0064 ohm	60 A	DUAL	R-PDSO-C5	1	DRAIN	Not Qualified				30	260
STN1NK60ZL	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3.3 W	PLASTIC/EPOXY	SWITCHING	600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	1.8 A	150 mJ		4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	3.3 W	150 Cel	SILICON		-55 Cel		MATTE TIN	15 ohm	.44 A	DUAL	R-PDSO-G4	1	DRAIN				e3		260	2 pF
CSD25404Q3T	Texas Instruments	P-CHANNEL	SINGLE	YES		PLASTIC/EPOXY	SWITCHING	20 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	240 A			8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.0121 ohm	18 A	DUAL	S-PDSO-N8	1	SOURCE				e3	30	260	68 pF
DMP2022LSS-13	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	35 A		10 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.013 ohm	10 A	DUAL	R-PDSO-G8	1		Not Qualified	HIGH RELIABILITY		e3	30	260
IPB600N25N3GATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	250 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	100 A	210 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN	.06 ohm	25 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-263AB	e3
IRFH5406TRPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	46 W	PLASTIC/EPOXY	SWITCHING	60 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	160 A	45 mJ	40 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.0144 ohm	11 A	DUAL	R-PDSO-N5	1	DRAIN	Not Qualified			e3	30	260
SI7148DP-T1-GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	96 W	PLASTIC/EPOXY	SWITCHING	75 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	60 A	100 mJ	28 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	96 ns	-55 Cel	90 ns	PURE MATTE TIN	.011 ohm	28 A	DUAL	R-PDSO-F8	1	DRAIN		AVALANCHE RATED
SIA437DJ-T1-GE3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	20 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	60 A			3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				MATTE TIN	.0145 ohm	29.7 A	DUAL	S-PDSO-N3	1	DRAIN				e3	30	260
SUD23N06-31-GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	31.25 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	50 A	20 mJ	21.4 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn)	.031 ohm	9.1 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252	e3	30	260
AUIRFZ24NSTRL	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	45 W	PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	68 A	71 mJ	17 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN OVER NICKEL	.07 ohm	17 A	DUAL	R-PDSO-G2	1	DRAIN		AVALANCHE RATED	TO-263AB	e3	30	260
BSZ520N15NS3GXT	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	150 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	84 A	60 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.052 ohm	21 A	DUAL	S-PDSO-N8		DRAIN
SI7625DN-T1-GE3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	52 W	UNSPECIFIED	SWITCHING	30 V	C BEND	SQUARE	ENHANCEMENT MODE	1	80 A	20 mJ	35 A	5	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn)	.007 ohm	17.3 A	DUAL	S-XDSO-C5	1	DRAIN	Not Qualified			e3	30	260
STD9N60M2	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	60 W	PLASTIC/EPOXY	SWITCHING	600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	22 A	105 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			.78 ohm	5.5 A	SINGLE	R-PSSO-G2		DRAIN		BULK: 2500	TO-252		NOT SPECIFIED	NOT SPECIFIED	.68 pF
FQP13N50C	Fairchild Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	195 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	52 A	860 mJ	13 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.48 ohm	13 A	SINGLE	R-PSFM-T3			Not Qualified		TO-220AB	e3
IPB90R340C3ATMA2	Infineon Technologies																														1
IPP110N20N3GXKSA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY	SWITCHING	200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	352 A	560 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN	.011 ohm	88 A	SINGLE	R-PSFM-T3			Not Qualified		TO-220AB	e3
IXTA3N120-TRR	IXYS Corporation																									Matte Tin (Sn)					1					e3	10	260
IXTA52P10P	Littelfuse	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	300 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	130 A	1000 mJ	52 A	2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		Matte Tin (Sn)	.05 ohm	52 A	SINGLE	R-PSSO-G2	1	DRAIN		AVALANCHE RATED	TO-263AA	e3	10	260	275 pF
AUIRF7769L2TR	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		UNSPECIFIED	SWITCHING	100 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	500 A	260 mJ		9	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR			SILICON					.0035 ohm	20 A	BOTTOM	R-XBCC-N9	1	DRAIN								AEC-Q101
BSZ100N06LS3G	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	60 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	80 A	55 mJ	20 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		TIN	.0179 ohm	20 A	DUAL	S-PDSO-N5	1	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE		e3	40	260	24 pF
DMP4015SSSQ-13	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.82 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	100 A		10.1 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.011 ohm	7.8 A	DUAL	R-PDSO-G8	1			HIGH RELIABILITY		e3	30	260
IPD90P04P405ATMA2	Infineon Technologies																									TIN					1					e3
IPP220N25NFDAKSA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY		250 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	244 A	610 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR			SILICON				TIN	.022 ohm	61 A	SINGLE	R-PSFM-T3		DRAIN			TO-220AB	e3
IRF630STRLPBF	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	74 W	PLASTIC/EPOXY	SWITCHING	200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	36 A	250 mJ	9 A	2	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Pure Matte Tin (Sn) - annealed	.4 ohm	9 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED			30	260
IRF7313TRPBF	Infineon Technologies	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	30 A	82 mJ	6.5 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.029 ohm	6.5 A	DUAL	R-PDSO-G8	1		Not Qualified	HIGH RELIABILITY, AVALANCHE RATED	MS-012AA	e3	30	260
IRF7779L2TRPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	125 W	UNSPECIFIED	SWITCHING	150 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	270 A	270 mJ	67 A	9	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN SILVER COPPER	.0011 ohm	11 A	BOTTOM	R-XBCC-N9	1	DRAIN	Not Qualified			e1	30	260
JANS2N6849	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	25 W	METAL	SWITCHING	100 V	WIRE	ROUND	ENHANCEMENT MODE	1	25 A	92 mJ	6.5 A	3	CYLINDRICAL	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	.345 ohm	6.5 A	BOTTOM	O-MBCY-W3			Qualified		TO-205AF	e0				MIL-19500/564
BSZ16DN25NS3GATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	250 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	44 A	120 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	.165 ohm	10.9 A	DUAL	S-PDSO-N8	1	DRAIN	Not Qualified			e3
FDB070AN06A0	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	175 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		190 mJ	80 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.007 ohm	15 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-263AB	e3	30	245
FDD86367-F085	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	227 W	PLASTIC/EPOXY	SWITCHING	80 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		82 mJ	100 A	2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON	104 ns	-55 Cel	80 ns	Matte Tin (Sn) - annealed	.0042 ohm		SINGLE	R-PSSO-G2	1	DRAIN			TO-252AA	e3	30	260		AEC-Q101
FDD86367_F085	Fairchild Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	227 W	PLASTIC/EPOXY	SWITCHING	80 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		82 mJ	100 A	2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON	104 ns	-55 Cel	80 ns	Matte Tin (Sn) - annealed	.0042 ohm		SINGLE	R-PSSO-G2	1	DRAIN			TO-252AA	e3	30	260		AEC-Q101
IAUC120N04S6N013ATMA1	Infineon Technologies																									TIN					1					e3
IPD85P04P407ATMA1	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	340 A	30 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				Tin (Sn)	.0073 ohm	85 A	SINGLE	R-PSSO-G2	1	DRAIN			TO-252	e3	NOT SPECIFIED	NOT SPECIFIED		AEC-Q101
IRF200P222	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY	SWITCHING	200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	728 A	1070 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR			SILICON				TIN	.0066 ohm	182 A	SINGLE	R-PSFM-T3		DRAIN			TO-247AC	e3
IRFR3607TRPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	140 W	PLASTIC/EPOXY	SWITCHING	75 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	310 A	120 mJ	80 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN OVER NICKEL	.009 ohm	56 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252AA	e3	30	260
STN4NF06L	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3.3 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	16 A	200 mJ	4 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.12 ohm	4 A	DUAL	R-PDSO-G4	1	DRAIN	Not Qualified			e3
SUM70040E-GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	480 A	266 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				MATTE TIN	.004 ohm	120 A	SINGLE	R-PSSO-G2	1				TO-263AB	e3	30	260
ZXMN4A06GTA	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	22 A		7 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.05 ohm	5 A	DUAL	R-PDSO-G4	1	DRAIN	Not Qualified			e3	30	260	61 pF
BSC014N04LSITR	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	400 A	90 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				TIN	.002 ohm	31 A	DUAL	R-PDSO-F8	1	DRAIN		LOGIC LEVEL COMPATIBLE		e3
BSP135E6327	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.8 W	PLASTIC/EPOXY		600 V	GULL WING	RECTANGULAR	DEPLETION MODE	1	.3 A		.12 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	60 ohm	.1 A	DUAL	R-PDSO-G4	1	DRAIN	Not Qualified			e0		260
BSP135E6906	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		600 V	GULL WING	RECTANGULAR	DEPLETION MODE	1	.3 A			4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				MATTE TIN	60 ohm	.1 A	DUAL	R-PDSO-G4		DRAIN	Not Qualified			e3		255
BSS169E6906	Infineon Technologies	N-CHANNEL	SINGLE	YES	.36 W						DEPLETION MODE	1			.17 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							.17 A
BUK7K32-100EX	Nexperia	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	116 A	67 mJ		6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				TIN	.0275 ohm	29 A	DUAL	R-PDSO-G6	1	DRAIN				e3	30	260		AEC-Q101; IEC-60134
C2M0045170D	Wolfspeed																																				NOT SPECIFIED	NOT SPECIFIED
DMPH6050SK3-13	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3.8 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	40 A	31 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		MATTE TIN	.07 ohm	7.2 A	SINGLE	R-PSSO-G2		DRAIN			TO-252	e3		260	68 pF
FDS6690AS	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	50 A		10 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	40 ns	-55 Cel	43 ns	MATTE TIN	.012 ohm	10 A	DUAL	R-PDSO-G8	1		Not Qualified			e3	30	260	100 pF
FF11MR12W1M1B11BOMA1	Infineon Technologies	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO		UNSPECIFIED	SWITCHING	1200 V	UNSPECIFIED	RECTANGULAR	ENHANCEMENT MODE	2	200 A			18	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR			SILICON		-40 Cel				100 A	UPPER	R-XUFM-X18		ISOLATED					NOT SPECIFIED	NOT SPECIFIED

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.