COMMON SOURCE, 2 ELEMENTS Small Signal Field Effect Transistors (FET) 31

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

NSVJ5908DSG5T1G

Onsemi

N-CHANNEL

COMMON SOURCE, 2 ELEMENTS

YES

.3 W

PLASTIC/EPOXY

AMPLIFIER

FLAT

RECTANGULAR

DEPLETION MODE

2

5

SMALL OUTLINE

JUNCTION

.3 W

150 Cel

SILICON

-55 Cel

TIN BISMUTH

.05 A

DUAL

R-PDSO-F5

1

LOW NOISE

e6

30

260

AEC-Q101

NSVJ6904DSB6T1G

Onsemi

N-CHANNEL

COMMON SOURCE, 2 ELEMENTS

YES

.7 W

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

DEPLETION MODE

2

6

SMALL OUTLINE

JUNCTION

.7 W

150 Cel

SILICON

-55 Cel

TIN BISMUTH

.05 A

DUAL

R-PDSO-G6

1

LOW NOISE

e6

30

260

2.3 pF

AEC-Q101

2SK2145-Y(TE85L,F)

Toshiba

N-CHANNEL

COMMON SOURCE, 2 ELEMENTS

YES

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

DEPLETION MODE

2

5

SMALL OUTLINE

JUNCTION

SILICON

DUAL

R-PDSO-G5

LOW NOISE

NOT SPECIFIED

NOT SPECIFIED

934061308115

NXP Semiconductors

N-CHANNEL

COMMON SOURCE, 2 ELEMENTS

YES

PLASTIC/EPOXY

SWITCHING

6 V

GULL WING

RECTANGULAR

DUAL GATE, ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.03 A

DUAL

R-PDSO-G6

934060847115

NXP Semiconductors

N-CHANNEL

COMMON SOURCE, 2 ELEMENTS

YES

PLASTIC/EPOXY

AMPLIFIER

6 V

GULL WING

RECTANGULAR

DUAL GATE, ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.03 A

DUAL

R-PDSO-G6

BF1214,115

NXP Semiconductors

N-CHANNEL

COMMON SOURCE, 2 ELEMENTS

YES

.18 W

PLASTIC/EPOXY

SWITCHING

6 V

GULL WING

RECTANGULAR

DUAL GATE, ENHANCEMENT MODE

2

.03 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.03 A

DUAL

R-PDSO-G6

Not Qualified

e3

BF1210,115

NXP Semiconductors

N-CHANNEL

COMMON SOURCE, 2 ELEMENTS

YES

.18 W

PLASTIC/EPOXY

AMPLIFIER

6 V

GULL WING

RECTANGULAR

DUAL GATE, ENHANCEMENT MODE

2

.03 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.03 A

DUAL

R-PDSO-G6

Not Qualified

e3

BF1214

NXP Semiconductors

N-CHANNEL

COMMON SOURCE, 2 ELEMENTS

YES

.18 W

PLASTIC/EPOXY

SWITCHING

6 V

GULL WING

RECTANGULAR

DUAL GATE, ENHANCEMENT MODE

2

.03 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.03 A

DUAL

R-PDSO-G6

Not Qualified

e3

BF1210

NXP Semiconductors

N-CHANNEL

COMMON SOURCE, 2 ELEMENTS

YES

.18 W

PLASTIC/EPOXY

AMPLIFIER

6 V

GULL WING

RECTANGULAR

DUAL GATE, ENHANCEMENT MODE

2

.03 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.03 A

DUAL

R-PDSO-G6

Not Qualified

e3

2SK2145-Y

Toshiba

N-CHANNEL

COMMON SOURCE, 2 ELEMENTS

YES

.3 W

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

DEPLETION MODE

2

5

SMALL OUTLINE

FET General Purpose Small Signal

JUNCTION

125 Cel

SILICON

TIN LEAD

DUAL

R-PDSO-G5

Not Qualified

LOW NOISE

e0

2SK2145-BL

Toshiba

N-CHANNEL

COMMON SOURCE, 2 ELEMENTS

YES

.3 W

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

DEPLETION MODE

2

5

SMALL OUTLINE

FET General Purpose Small Signal

JUNCTION

125 Cel

SILICON

TIN LEAD

DUAL

R-PDSO-G5

Not Qualified

LOW NOISE

e0

2SK2145-GR

Toshiba

N-CHANNEL

COMMON SOURCE, 2 ELEMENTS

YES

.3 W

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

DEPLETION MODE

2

5

SMALL OUTLINE

FET General Purpose Small Signal

JUNCTION

125 Cel

SILICON

TIN LEAD

DUAL

R-PDSO-G5

Not Qualified

LOW NOISE

e0

2SK2145

Toshiba

N-CHANNEL

COMMON SOURCE, 2 ELEMENTS

YES

.3 W

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

DEPLETION MODE

2

5

SMALL OUTLINE

FET General Purpose Small Signal

JUNCTION

125 Cel

SILICON

DUAL

R-PDSO-G5

Not Qualified

LOW NOISE

NOT SPECIFIED

NOT SPECIFIED

HN4K03JU

Toshiba

N-CHANNEL

COMMON SOURCE, 2 ELEMENTS

YES

.2 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

12 ohm

.1 A

DUAL

R-PDSO-G5

Not Qualified

e0

2SK3320-BL

Toshiba

N-CHANNEL

COMMON SOURCE, 2 ELEMENTS

YES

.2 W

PLASTIC/EPOXY

AMPLIFIER

50 V

GULL WING

RECTANGULAR

DEPLETION MODE

2

5

SMALL OUTLINE

Other Transistors

JUNCTION

.2 W

125 Cel

SILICON

TIN LEAD

DUAL

R-PDSO-G5

Not Qualified

LOW NOISE

e0

3 pF

2SK3320-BL(TE85L,F

Toshiba

N-CHANNEL

COMMON SOURCE, 2 ELEMENTS

YES

.2 W

PLASTIC/EPOXY

AMPLIFIER

50 V

GULL WING

RECTANGULAR

DEPLETION MODE

2

5

SMALL OUTLINE

JUNCTION

.2 W

125 Cel

SILICON

DUAL

R-PDSO-G5

LOW NOISE

NOT SPECIFIED

NOT SPECIFIED

3 pF

2SK3320-BL(T5LKMCF

Toshiba

N-CHANNEL

COMMON SOURCE, 2 ELEMENTS

YES

.2 W

PLASTIC/EPOXY

AMPLIFIER

50 V

GULL WING

RECTANGULAR

DEPLETION MODE

2

5

SMALL OUTLINE

JUNCTION

.2 W

125 Cel

SILICON

DUAL

R-PDSO-G5

LOW NOISE

NOT SPECIFIED

NOT SPECIFIED

3 pF

2SK3320-GR(TE85L,F

Toshiba

N-CHANNEL

COMMON SOURCE, 2 ELEMENTS

YES

.2 W

PLASTIC/EPOXY

AMPLIFIER

50 V

GULL WING

RECTANGULAR

DEPLETION MODE

2

5

SMALL OUTLINE

JUNCTION

.2 W

125 Cel

SILICON

DUAL

R-PDSO-G5

LOW NOISE

NOT SPECIFIED

NOT SPECIFIED

3 pF

2SK3320-Y

Toshiba

N-CHANNEL

COMMON SOURCE, 2 ELEMENTS

YES

.2 W

PLASTIC/EPOXY

AMPLIFIER

50 V

GULL WING

RECTANGULAR

DEPLETION MODE

2

5

SMALL OUTLINE

Other Transistors

JUNCTION

.2 W

125 Cel

SILICON

TIN LEAD

DUAL

R-PDSO-G5

Not Qualified

LOW NOISE

e0

3 pF

2SK3320

Toshiba

N-CHANNEL

COMMON SOURCE, 2 ELEMENTS

YES

.2 W

PLASTIC/EPOXY

AMPLIFIER

50 V

GULL WING

RECTANGULAR

DEPLETION MODE

2

5

SMALL OUTLINE

FET General Purpose Small Signal

JUNCTION

.2 W

125 Cel

SILICON

DUAL

R-PDSO-G5

Not Qualified

LOW NOISE

NOT SPECIFIED

NOT SPECIFIED

3 pF

2SK3320-GR

Toshiba

N-CHANNEL

COMMON SOURCE, 2 ELEMENTS

YES

.2 W

PLASTIC/EPOXY

AMPLIFIER

50 V

GULL WING

RECTANGULAR

DEPLETION MODE

2

5

SMALL OUTLINE

Other Transistors

JUNCTION

.2 W

125 Cel

SILICON

TIN LEAD

DUAL

R-PDSO-G5

Not Qualified

LOW NOISE

e0

3 pF

UPA573T-A

Renesas Electronics

P-CHANNEL

COMMON SOURCE, 2 ELEMENTS

YES

.2 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

.1 A

5

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

80 Cel

SILICON

TIN BISMUTH

25 ohm

.1 A

DUAL

R-PDSO-G5

Not Qualified

e6

10

260

UPA502T-A

Renesas Electronics

N-CHANNEL

COMMON SOURCE, 2 ELEMENTS

YES

.3 W

PLASTIC/EPOXY

50 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

.1 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

30 ohm

.1 A

DUAL

R-PDSO-G5

Not Qualified

e6

10

260

UPA503T

Renesas Electronics

P-CHANNEL

COMMON SOURCE, 2 ELEMENTS

YES

.3 W

PLASTIC/EPOXY

50 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

.1 A

5

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

100 ohm

.1 A

DUAL

R-PDSO-G5

Not Qualified

e0

UPA502T

Renesas Electronics

N-CHANNEL

COMMON SOURCE, 2 ELEMENTS

YES

.3 W

PLASTIC/EPOXY

50 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

.1 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

30 ohm

.1 A

DUAL

R-PDSO-G5

Not Qualified

e0

UPA505T-A

Renesas Electronics

N-CHANNEL AND P-CHANNEL

COMMON SOURCE, 2 ELEMENTS

YES

.3 W

PLASTIC/EPOXY

50 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

.1 A

5

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

100 ohm

.1 A

DUAL

R-PDSO-G5

Not Qualified

e6

10

260

UPA573T

Renesas Electronics

P-CHANNEL

COMMON SOURCE, 2 ELEMENTS

YES

.2 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

.1 A

5

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

80 Cel

SILICON

TIN LEAD

25 ohm

.1 A

DUAL

R-PDSO-G5

Not Qualified

e0

UPA503T-A

Renesas Electronics

P-CHANNEL

COMMON SOURCE, 2 ELEMENTS

YES

.3 W

PLASTIC/EPOXY

50 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

.1 A

5

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

100 ohm

.1 A

DUAL

R-PDSO-G5

Not Qualified

e6

10

260

UPA572T

Renesas Electronics

N-CHANNEL

COMMON SOURCE, 2 ELEMENTS

YES

.2 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

.1 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

80 Cel

SILICON

TIN LEAD

8 ohm

.1 A

DUAL

R-PDSO-G5

Not Qualified

e0

UPA505T

Renesas Electronics

N-CHANNEL AND P-CHANNEL

COMMON SOURCE, 2 ELEMENTS

YES

.3 W

PLASTIC/EPOXY

50 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

.1 A

5

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

100 ohm

.1 A

DUAL

R-PDSO-G5

Not Qualified

e0

UPA572T-A

Renesas Electronics

N-CHANNEL

COMMON SOURCE, 2 ELEMENTS

YES

.2 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

.1 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

80 Cel

SILICON

TIN BISMUTH

8 ohm

.1 A

DUAL

R-PDSO-G5

Not Qualified

e6

10

260

Small Signal Field Effect Transistors (FET)

Small Signal Field Effect Transistors (FET) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal FETs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Proper use of Small Signal FETs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal FETs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.