SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE Small Signal Field Effect Transistors (FET) 1,187

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

PMGD400UN

NXP Semiconductors

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

.41 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

.71 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin (Sn)

.48 ohm

.71 A

DUAL

R-PDSO-G6

1

Not Qualified

e3

30

260

PMDPB55XP

NXP Semiconductors

P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

20 V

NO LEAD

SQUARE

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.07 ohm

3.4 A

DUAL

S-PDSO-N6

1

DRAIN

e3

IEC-60134

PMGD400UN,115

NXP Semiconductors

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

.41 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

.71 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.48 ohm

.71 A

DUAL

R-PDSO-G6

1

Not Qualified

e3

30

260

PMGD370XN

NXP Semiconductors

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

.41 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

.74 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin (Sn)

.44 ohm

.74 A

DUAL

R-PDSO-G6

1

Not Qualified

e3

30

260

PMGD780SN

NXP Semiconductors

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

.41 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

.49 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin (Sn)

.92 ohm

.49 A

DUAL

R-PDSO-G6

1

Not Qualified

e3

30

260

PMDPB28UN

NXP Semiconductors

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

20 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

-55 Cel

.037 ohm

4.6 A

DUAL

R-PDSO-N6

DRAIN

NOT SPECIFIED

NOT SPECIFIED

IEC-60134

PMDPB28UN,115

NXP Semiconductors

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

8.33 W

PLASTIC/EPOXY

SWITCHING

20 V

NO LEAD

SQUARE

ENHANCEMENT MODE

2

5.8 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.037 ohm

4.6 A

DUAL

S-PDSO-N6

1

DRAIN

e3

30

260

IEC-60134

PMGD8000LN

NXP Semiconductors

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

.2 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

.125 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin (Sn)

8 ohm

.125 A

DUAL

R-PDSO-G6

1

Not Qualified

LOGIC LEVEL COMPATIBLE

e3

30

260

NX7002BKXB

NXP Semiconductors

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

3.2 ohm

.33 A

DUAL

R-PDSO-N6

1

DRAIN

LOGIC LEVEL COMPATIBLE

e3

30

260

IEC-60134

PMDXB950UPEL

NXP Semiconductors

P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

20 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

1.4 ohm

.5 A

DUAL

R-PDSO-N6

1

DRAIN

e3

30

260

IEC-60134

PMDPB56XNEA

NXP Semiconductors

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.072 ohm

3.1 A

DUAL

R-PDSO-N6

1

DRAIN

e3

30

260

AEC-Q101; IEC-60134

PMDPB30XN

NXP Semiconductors

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

8.33 W

PLASTIC/EPOXY

SWITCHING

20 V

NO LEAD

SQUARE

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

.04 ohm

4 A

DUAL

S-PDSO-N6

1

DRAIN

e3

30

260

74 pF

IEC-60134

PMGD290UCEA

NXP Semiconductors

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.38 ohm

.725 A

DUAL

R-PDSO-G6

1

e3

AEC-Q101; IEC-60134

PMDPB760EN

NXP Semiconductors

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

100 V

NO LEAD

SQUARE

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

-55 Cel

.92 ohm

.76 A

DUAL

S-PDSO-N6

DRAIN

IEC-60134

PMGD290XN

NXP Semiconductors

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

.41 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

.86 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin (Sn)

.35 ohm

.86 A

DUAL

R-PDSO-G6

1

Not Qualified

e3

30

260

PMDPB65UP

NXP Semiconductors

P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

20 V

NO LEAD

SQUARE

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.09 ohm

.0035 A

DUAL

S-PDSO-N6

1

DRAIN

Not Qualified

e3

PMGD280UN

NXP Semiconductors

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

.4 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

.87 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin (Sn)

.34 ohm

.87 A

DUAL

R-PDSO-G6

1

Not Qualified

e3

30

260

PMDPB38UNE,115

NXP Semiconductors

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

.51 W

PLASTIC/EPOXY

SWITCHING

20 V

NO LEAD

SQUARE

ENHANCEMENT MODE

2

5 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.061 ohm

4 A

DUAL

S-PDSO-N6

DRAIN

IEC-60134

PMDXB550UNE

NXP Semiconductors

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.9 ohm

.59 A

DUAL

R-PDSO-N6

DRAIN

IEC-60134

PMDPB95XNE

NXP Semiconductors

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

SQUARE

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.12 ohm

2.4 A

DUAL

S-PDSO-N6

1

DRAIN

e3

IEC-60134

SP000447478

Infineon Technologies

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

-55 Cel

.022 ohm

5.8 A

DUAL

R-PDSO-G8

BSD235NH6327

Infineon Technologies

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.35 ohm

.95 A

DUAL

R-PDSO-G6

AVALANCHE RATED

AEC-Q101

BSL806NH6327XTSA1

Infineon Technologies

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

-55 Cel

TIN

.057 ohm

2.3 A

DUAL

R-PDSO-G6

1

AVALANCHE RATED

e3

28.6 pF

AEC-Q101

BSL215CH6327

Infineon Technologies

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

.5 W

PLASTIC/EPOXY

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

.5 W

150 Cel

SILICON

-55 Cel

.14 ohm

1.5 A

DUAL

R-PDSO-G6

AVALANCHE RATED

NOT SPECIFIED

NOT SPECIFIED

9 pF

AEC-Q101

BSD235NL6327HTSA1

Infineon Technologies

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.35 ohm

.95 A

DUAL

R-PDSO-G6

AVALANCHE RATED

AEC-Q101

BSL214NH6327XTSA1

Infineon Technologies

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.14 ohm

1.5 A

DUAL

R-PDSO-G6

1

AVALANCHE RATED

e3

9 pF

AEC-Q101

BSL215P

Infineon Technologies

P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

.15 ohm

1.5 A

DUAL

R-PDSO-G6

AVALANCHE RATED

e3

128 pF

AEC-Q101

BSL207NH6327

Infineon Technologies

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

.07 ohm

2.1 A

DUAL

R-PDSO-G6

AVALANCHE RATED

e3

24 pF

AEC-Q101

BSL205NL6327HTSA1

Infineon Technologies

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.05 ohm

2.5 A

DUAL

R-PDSO-G6

Not Qualified

AVALANCHE RATED

NOT SPECIFIED

NOT SPECIFIED

24 pF

BSL207NH6327XTSA1

Infineon Technologies

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.07 ohm

2.1 A

DUAL

R-PDSO-G6

1

AVALANCHE RATED

e3

24 pF

AEC-Q101

BSO350N03

Infineon Technologies

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

1.4 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

5 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.035 ohm

5 A

DUAL

R-PDSO-G8

3

Not Qualified

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

MS-012AA

e3

260

28 pF

BSD223P

Infineon Technologies

P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

.25 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.39 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

1.2 ohm

.39 A

DUAL

R-PDSO-G6

1

Not Qualified

AVALANCHE RATED

e3

260

22 pF

BSL806NL6327

Infineon Technologies

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

.5 W

PLASTIC/EPOXY

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

2.3 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.057 ohm

2.3 A

DUAL

R-PDSO-G6

1

Not Qualified

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

e3

260

28.6 pF

BSL806NL6327HTSA1

Infineon Technologies

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.057 ohm

2.3 A

DUAL

R-PDSO-G6

Not Qualified

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

NOT SPECIFIED

NOT SPECIFIED

28.6 pF

BSD223PL6327

Infineon Technologies

P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

.25 W

PLASTIC/EPOXY

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

.39 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

1.2 ohm

.39 A

DUAL

R-PDSO-G6

1

Not Qualified

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

e3

260

22 pF

BSL214NL6327HTSA1

Infineon Technologies

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.14 ohm

1.5 A

DUAL

R-PDSO-G6

Not Qualified

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

NOT SPECIFIED

NOT SPECIFIED

9 pF

BSL205NH6327

Infineon Technologies

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.05 ohm

2.5 A

DUAL

R-PDSO-G6

AVALANCHE RATED

24 pF

AEC-Q101

BSD223PL6327XT

Infineon Technologies

P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

1.2 ohm

.39 A

DUAL

R-PDSO-G6

Not Qualified

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

e3

22 pF

BSD235C

Infineon Technologies

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.35 ohm

.95 A

DUAL

R-PDSO-G6

1

AVALANCHE RATED

e3

AEC-Q101

BSL214NL6327

Infineon Technologies

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

.5 W

PLASTIC/EPOXY

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

1.5 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.14 ohm

1.5 A

DUAL

R-PDSO-G6

1

Not Qualified

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

e3

260

9 pF

BSD223PL6327HTSA1

Infineon Technologies

P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

1.2 ohm

.39 A

DUAL

R-PDSO-G6

AVALANCHE RATED

22 pF

AEC-Q101

2N7627UC

Infineon Technologies

P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

UNSPECIFIED

SWITCHING

60 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

1.6 ohm

.65 A

DUAL

R-XDSO-N6

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

BSD235CL6327HTSA1

Infineon Technologies

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.35 ohm

.95 A

DUAL

R-PDSO-G6

AVALANCHE RATED

AEC-Q101

BSL207NL6327

Infineon Technologies

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

.5 W

PLASTIC/EPOXY

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

2.1 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.07 ohm

2.1 A

DUAL

R-PDSO-G6

1

Not Qualified

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

e3

260

24 pF

2N7632UC

Infineon Technologies

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

1 W

UNSPECIFIED

SWITCHING

60 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

2

.89 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.89 A

DUAL

R-XDSO-N6

1

BSL215PL6327HTSA1

Infineon Technologies

P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.15 ohm

1.5 A

DUAL

R-PDSO-G6

Not Qualified

AVALANCHE RATED

NOT SPECIFIED

NOT SPECIFIED

128 pF

BSD235N

Infineon Technologies

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.35 ohm

.95 A

DUAL

R-PDSO-G6

1

AVALANCHE RATED

e3

AEC-Q101

2N7617UC

Infineon Technologies

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

UNSPECIFIED

SWITCHING

60 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.75 ohm

.89 A

DUAL

R-XDSO-N6

Not Qualified

Small Signal Field Effect Transistors (FET)

Small Signal Field Effect Transistors (FET) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal FETs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Proper use of Small Signal FETs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal FETs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.