Diodes Incorporated Small Signal Field Effect Transistors (FET) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

DMP3165L-7

Diodes Incorporated

MATTE TIN

1

e3

260

DMP31D7LW-7

Diodes Incorporated

MATTE TIN

e3

260

ZXMC3F31DN8TA

Diodes Incorporated

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

2.35 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

7.8 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.024 ohm

5.7 A

DUAL

R-PDSO-G8

1

Not Qualified

e3

30

260

DMC2700UDMQ-7

Diodes Incorporated

MATTE TIN

e3

260

DMG3407SSN-7

Diodes Incorporated

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.8 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

4 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.05 ohm

3.3 A

DUAL

R-PDSO-G3

1

HIGH RELIABILITY

e3

30

260

DMN1260UFA-7B

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

12 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

NICKEL PALLADIUM GOLD

.366 ohm

.5 A

SINGLE

R-PSSO-N2

1

DRAIN

e4

260

DMN2004TK-7

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.15 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.54 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.55 ohm

.54 A

DUAL

R-PDSO-G3

1

Not Qualified

HIGH RELIABILITY, LOW THRESHOLD

e3

30

260

20 pF

DMN2011UTS-13

Diodes Incorporated

MATTE TIN

1

e3

260

DMN3010LFG-7

Diodes Incorporated

MATTE TIN

e3

260

DMN3016LFDE-7

Diodes Incorporated

NICKEL PALLADIUM GOLD

1

e4

30

260

DMN3016LFDF-7

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

-55 Cel

NICKEL PALLADIUM GOLD

.012 ohm

10 A

DUAL

S-PDSO-N6

DRAIN

HIGH RELIABILITY

e4

260

AEC-Q101

DMN3026LVT-7

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.023 ohm

6.6 A

DUAL

R-PDSO-G6

1

e3

30

260

DMN3028LQ-7

Diodes Incorporated

MATTE TIN

e3

260

DMN6066SSS-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.8 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

5 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.066 ohm

3.7 A

DUAL

R-PDSO-G8

1

Not Qualified

HIGH RELIABILITY

e3

30

260

DMN62D0LFB-7

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

3

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

.5 W

150 Cel

SILICON

-55 Cel

NICKEL PALLADIUM GOLD

2 ohm

.1 A

BOTTOM

R-PBCC-N3

1

DRAIN

HIGH RELIABILITY

e4

30

260

6 pF

AEC-Q101

DMN66D0LT-7

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.2 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.115 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

6 ohm

.115 A

DUAL

R-PDSO-G3

1

Not Qualified

e3

30

260

1.4 pF

DMP3013SFV-13

Diodes Incorporated

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

31 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

SQUARE

ENHANCEMENT MODE

1

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.0095 ohm

12 A

DUAL

S-PDSO-F5

1

DRAIN

e3

260

230 pF

DMP3018SFK-7

Diodes Incorporated

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

NICKEL PALLADIUM GOLD

.0145 ohm

10.2 A

DUAL

R-PDSO-N4

DRAIN

HIGH RELIABILITY

e4

260

686 pF

AEC-Q101

DMP3026SFDF-7

Diodes Incorporated

NICKEL PALLADIUM GOLD

e4

260

DMP32M6SPS-13

Diodes Incorporated

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

2.3 W

150 Cel

SILICON

-55 Cel

MATTE TIN

.0026 ohm

100 A

DUAL

R-PDSO-F5

1

DRAIN

e3

874 pF

DMP56D0UFB-7

Diodes Incorporated

P-CHANNEL

SINGLE

YES

.425 W

1

.2 A

CHIP CARRIER

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

NICKEL PALLADIUM GOLD

8 ohm

.2 A

1

e4

30

260

DMP6110SSD-13

Diodes Incorporated

P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

.105 ohm

3.3 A

DUAL

R-PDSO-G8

e3

260

DMT2004UFDF-7

Diodes Incorporated

NICKEL PALLADIUM GOLD

1

e4

30

260

ZXMN0545G4TA

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

450 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

50 ohm

.14 A

DUAL

R-PDSO-G4

1

DRAIN

Not Qualified

TO-261AA

e3

30

260

4 pF

ZXMN3A01F

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

.22 ohm

2 A

DUAL

R-PDSO-G3

1

Not Qualified

e3

30

260

ZXMN3A03E6TA

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.7 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3.7 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.05 ohm

3.7 A

DUAL

R-PDSO-G6

1

Not Qualified

e3

30

260

DMC2053UVTQ-13

Diodes Incorporated

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

1.1 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.035 ohm

4.6 A

DUAL

R-PDSO-G6

1

e3

260

32 pF

AEC-Q101

DMC2710UDW-13

Diodes Incorporated

MATTE TIN

e3

260

DMG4800LFG-7

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.94 W

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

7.44 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

NICKEL PALLADIUM GOLD

.017 ohm

7.44 A

DUAL

S-PDSO-N5

1

DRAIN

Not Qualified

e4

30

260

DMN1053UCP4-7

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

12 V

BALL

SQUARE

ENHANCEMENT MODE

1

4

GRID ARRAY

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

.053 ohm

4 A

BOTTOM

S-PBGA-B4

e3

30

260

126 pF

DMN2023UCB4-7

Diodes Incorporated

N-CHANNEL

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

YES

1.45 W

PLASTIC/EPOXY

SWITCHING

24 V

BALL

SQUARE

ENHANCEMENT MODE

2

4

GRID ARRAY

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

BOTTOM

S-PBGA-B4

1

HIGH RELIABILITY

260

260 pF

AEC-Q101

DMN2400UFDQ-7

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.85 W

PLASTIC/EPOXY

SWITCHING

20 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

NICKEL PALLADIUM GOLD

.8 ohm

.7 A

DUAL

S-PDSO-N3

1

DRAIN

e4

260

4.2 pF

AEC-Q101; IATF 16949

DMN3055LFDB-7

Diodes Incorporated

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

1.36 W

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

SQUARE

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

NICKEL PALLADIUM GOLD

.04 ohm

5 A

DUAL

S-PDSO-N6

e4

44 pF

DMN3061SWQ-7

Diodes Incorporated

MATTE TIN

e3

260

DMN6069SFG-7

Diodes Incorporated

MATTE TIN

e3

260

DMP1055USW-7

Diodes Incorporated

MATTE TIN

e3

260

DMP2047UCB4-7

Diodes Incorporated

P-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

PLASTIC/EPOXY

SWITCHING

20 V

BALL

SQUARE

ENHANCEMENT MODE

1

4

GRID ARRAY

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN SILVER COPPER

.06 ohm

3.6 A

BOTTOM

S-PBGA-B4

1

HIGH RELIABILITY

e1

30

260

AEC-Q101

DMP2065UFDB-7

Diodes Incorporated

P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

20 V

NO LEAD

SQUARE

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

1.54 W

150 Cel

SILICON

-55 Cel

NICKEL PALLADIUM GOLD

.05 ohm

4.5 A

DUAL

S-PDSO-N6

DRAIN

FAST SWITCHING

e4

260

78 pF

DMP2069UFY4-7

Diodes Incorporated

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.53 W

PLASTIC/EPOXY

SWITCHING

20 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

2.5 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

NICKEL PALLADIUM GOLD

.054 ohm

2.5 A

DUAL

R-PDSO-N3

1

DRAIN

Not Qualified

HIGH RELIABILITY

e4

30

260

DMP2070UQ-7

Diodes Incorporated

MATTE TIN

e3

260

DMP2100UQ-7

Diodes Incorporated

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.3 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

4.3 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.038 ohm

4.3 A

DUAL

R-PDSO-G3

HIGH RELIABILITY

e3

260

AEC-Q101

DMP210DUFB4-7B

Diodes Incorporated

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.35 W

PLASTIC/EPOXY

SWITCHING

20 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

.2 A

3

CHIP CARRIER

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Nickel/Palladium/Gold (Ni/Pd/Au)

5.5 ohm

.14 A

BOTTOM

R-PBCC-N3

1

DRAIN

HIGH RELIABILITY, LOW THRESHOLD

e4

30

260

20 pF

DMP2240UWQ-7

Diodes Incorporated

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

.15 ohm

1.5 A

DUAL

R-PDSO-G3

1

HIGH RELIABILITY

e3

260

AEC-Q101

DMP4015SPSQ-13

Diodes Incorporated

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

.011 ohm

8.5 A

DUAL

R-PDSO-F5

1

HIGH RELIABILITY

e3

30

260

AEC-Q101

DMT3009LDT-7

Diodes Incorporated

NICKEL PALLADIUM GOLD

1

e4

30

260

DMT3020LDV-7

Diodes Incorporated

MATTE TIN

1

e3

260

ZVP4525ZTA

Diodes Incorporated

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.2 W

PLASTIC/EPOXY

SWITCHING

250 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

.205 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

14 ohm

.205 A

SINGLE

R-PSSO-F3

1

DRAIN

Not Qualified

e3

30

260

ZXM62P02E6TA

Diodes Incorporated

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.7 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2.3 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.2 ohm

2.3 A

DUAL

R-PDSO-G6

1

Not Qualified

LOW THRESHOLD

e3

30

260

Small Signal Field Effect Transistors (FET)

Small Signal Field Effect Transistors (FET) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal FETs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Proper use of Small Signal FETs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal FETs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.