Infineon Technologies - EASYKITAUXDRIVESTOBO1

STGD5NB120SZT4 by STMicroelectronics is an N-CHANNEL IGBT with 1200V max collector-emitter voltage, 10A max collector current, and 55W max power dissipation. Ideal for power control applications due to its single configuration with built-in diode and resistor. It comes in a small outline package shape suitable for surface mount assembly.

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 378 W; Maximum Collector Current (IC): 120 A; No. of Terminals: 3;

FF450R12ME4EB11BPSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements, a 740 ns turn off time, and 1200V max collector-emitter voltage. It is used in applications requiring high power switching such as industrial motor drives and renewable energy systems.

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Collector Current (IC): 12 A; Package Body Material: PLASTIC/EPOXY; Transistor Application: POWER CONTROL;

IKW75N60H3FKSA1 by Infineon Technologies is an N-CHANNEL IGBT with 600V VCE, 80A IC. It is a single configuration transistor with built-in diode for power control applications. The package style is flange mount with plastic/epoxy body material and through-hole terminals.

N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 600 A; Maximum Operating Temperature: 150 Cel; Transistor Element Material: SILICON;

Infineon Technologies' FP10R12W1T4B3BOMA1 is a N-CHANNEL IGBT with 6 elements in a bridge configuration. It has a max VCE of 1200V, IC of 20A, and toff of 500ns. Ideal for power control applications due to its built-in diode and thermistor, it offers fast ton at 108ns.

FGH40N60SFDTU-F085 by Onsemi is an N-CHANNEL IGBT with 600V VCEsat, 80A IC, and 290W power dissipation. Ideal for power control applications, it features a built-in diode, 54ns fall time, and -55 to 150°C operating temperature range.

FGA30T65SHD by Onsemi is an N-CHANNEL IGBT transistor with a max VCEsat of 2.1V and IC of 60A, ideal for power control applications. It has a turn-off time of 67.2ns, operating temperature range from -55 to 175 °C, and a collector-emitter voltage of 650V. The package style is flange mount with matte tin terminal finish in a rectangular shape.

IKW20N60TFKSA1 by Infineon is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 40A max collector current. It has a single configuration with built-in diode, ideal for power control applications. The transistor features a turn-off time of 299ns and turn-on time of 36ns, suitable for high-power switching in various industries.

IGB50N60TATMA1 by Infineon Technologies is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 600V and a max collector current of 100A. It has a nominal turn-off time of 396ns and a turn-on time of 60ns, making it suitable for power control applications requiring fast switching speeds. This insulated gate bipolar transistor (IGBT) comes in a surface-mount package with GULL WING terminals, ideal for high-power electronic systems operating at temperatures up to 175°C.

IKD06N60RAATMA2 by Infineon is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 12A max collector current. It has a turn-off time of 335ns and turn-on time of 22ns, making it suitable for applications requiring fast switching such as motor drives and power supplies. AEC-Q101 certified, it comes in a small outline package with gull wing terminals for surface mount assembly.

Infineon's FF225R12MS4BOSA1 is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements, built-in diode, and thermistor. Featuring 1200V max collector-emitter voltage, it has a 590ns turn off time and 275A max collector current. Ideal for applications requiring high power switching in industrial settings.

HGT1S10N120BNS by Onsemi is an N-CHANNEL IGBT transistor with a max VCEsat of 4.2V and a max collector-emitter voltage of 1200V. It is designed for motor control applications, featuring a rise time of 15ns and a power dissipation of 298W.

TDB6HK180N16RRBOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 1200V VCEsat, 140A IC, and 515W power dissipation. Ideal for POWER CONTROL applications due to its fast turn-off time of 410ns and high operating temperature range from -40°C to 150°C.

DF1000R17IE4BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 1700V max collector-emitter voltage, 1390A max collector current, and 1890ns turn off time. Ideal for power control applications due to its single configuration with built-in diode and thermistor, rectangular package shape, and flange mount style. Operating at a max temperature of 175°C, it offers efficient performance in high-power systems.

MIXA60W1200TED by Littelfuse is an N-CHANNEL IGBT with 6 elements in a bridge configuration. It has a max VCEsat of 2.1V and can handle up to 85A collector current. Ideal for power control applications, it operates at temperatures up to 150°C with a collector-emitter voltage of 1200V.

STGD20N45LZAG by STMicroelectronics is an N-CHANNEL IGBT with built-in TVS diode and resistor, ideal for automotive ignition applications. It has a max VCEsat of 1.25V, collector-emitter voltage of 475V, and can handle a max current of 25A. Operating temperature ranges from -55 to 175°C.

IXGH72N60A3 by Littelfuse is an N-CHANNEL IGBT transistor with VCEsat of 1.35V, IC of 75A, and Ptot of 540W. Ideal for POWER CONTROL applications due to its fast turn-off time (toff) of 885ns and high operating temperature range (-55 to 150°C).

APT85GR120JD60 by Microchip Technology is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 1200V and a max power dissipation of 543W. Ideal for motor control applications, it has a nominal turn-off time of 445ns and operates in temperatures ranging from -55 to 150°C.