Infineon Technologies - FF300R12MS4ENG

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FF300R12MS4ENG by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number FF300R12MS4ENG
Description N-Channel; Maximum Power Dissipation (Abs): 1950 W; Maximum Collector Current (IC): 370 A; Transistor Element Material: SILICON; Case Connection: ISOLATED; Nominal Turn On Time (ton): 180 ns;
Datasheet FF300R12MS4ENG Datasheet
In Stock276
NAME DESCRIPTION
Maximum Collector Current (IC): 370 A
Transistor Element Material: SILICON
Maximum Gate-Emitter Threshold Voltage: 6.5 V
Polarity or Channel Type: N-Channel
Minimum Operating Temperature: -40 Cel
Nominal Turn Off Time (toff): 590 ns
Maximum Power Dissipation (Abs): 1950 W
Maximum Collector-Emitter Voltage: 1200 V
Nominal Turn On Time (ton): 180 ns
Maximum Operating Temperature: 125 Cel
Maximum Gate-Emitter Voltage: 20 V
Case Connection: ISOLATED
Maximum VCEsat: 3.75 V
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