NXP Semiconductors - 935362002598

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935362002598 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number 935362002598
Description RF Power Field-Effect Transistors;
Datasheet 935362002598 Datasheet
In Stock2,210
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PD57060 by STMicroelectronics

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PD57060 by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 7 A, a breakdown voltage of 65 V, and operates in the ultra-high frequency band. Its compact surface mount design ensures efficient performance in various electronic devices.
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FLL120MK by Eudyna Devices

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N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Qualification: Not Qualified; Transistor Application: AMPLIFIER; No. of Terminals: 2;
MRF136Y by Motorola

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N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Terminal Position: DUAL; Operating Mode: ENHANCEMENT MODE; Package Style (Meter): FLANGE MOUNT;
BLF6G10S-45 by NXP Semiconductors

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N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Element Material: SILICON; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; No. of Terminals: 2;
BLF246 by Asi Semiconductor

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PTFA220041MV4 by Wolfspeed

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N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Shape: SQUARE; Minimum DS Breakdown Voltage: 65 V; Highest Frequency Band: S BAND;
PD57006 by STMicroelectronics

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MRF1570FNT1 by Freescale Semiconductor

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N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 165 W; JESD-609 Code: e3; Peak Reflow Temperature (C): 260;
A2T27S020NR1 by NXP Semiconductors

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N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Elements: 1; Minimum Operating Temperature: -40 Cel; Terminal Finish: TIN;
TGI7785-25L by Toshiba

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Toshiba's TGI7785-25L is an N-channel RF Power FET with a 50V DS breakdown voltage, ideal for X-band applications. Featuring a 4.5A drain current and 70W power dissipation, this DEPLETION MODE transistor is designed for amplifier use in high-frequency circuits. Its CERAMIC, METAL-SEALED COFIRED package ensures reliable performance in demanding environments.
QPD1008L by Qorvo

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Qorvo's QPD1008L is a single N-channel RF FET with GaN technology, operating in S band. It features a ceramic-metal sealed co-fired package for high electron mobility, suitable for amplifier applications. With a max temperature of 85°C and dual terminal position, it offers reliable performance in various environments.
CGH31240F by Wolfspeed

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CGH31240F by Wolfspeed is a N-CHANNEL RF Power FET with 120V DS Breakdown Voltage. It operates in S BAND, featuring Gallium Nitride technology for high electron mobility. Ideal for amplifier applications, it comes in a ceramic, metal-sealed co-fired package with flange mount style.
MRF136Y by New Jersey Semiconductor Products

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MRF171A by Motorola

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