NXP Semiconductors - BLF9G24LS-150V

  1. Home
  2. NXP Semiconductors - BLF9G24LS-150V
BLF9G24LS-150V by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number BLF9G24LS-150V
Description RF Power Field-Effect Transistors;
Datasheet BLF9G24LS-150V Datasheet
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

AFT09MS031NR1 by NXP Semiconductors

AFT09MS031NR1

NXP Semiconductors

AFT09MS031NR1 by NXP is an N-CHANNEL RF Power FET with 317W power dissipation. It operates at a max temp of 150°C, ideal for high-power RF applications. With surface mount capability and MSL level 3, it offers efficient performance in various electronic devices.
GS61008P-TR by Gan Systems

GS61008P-TR

Gan Systems

GS61008P-TR by Gan Systems is an N-channel RF FET for switching applications. It operates in enhancement mode with a max drain current of 90A. With GaN element material, it offers high frequency band performance suitable for very high frequency applications.
BLF6G15L-40RN by NXP Semiconductors

BLF6G15L-40RN

NXP Semiconductors

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED; Moisture Sensitivity Level (MSL): NOT APPLICABLE;
LET9045S by STMicroelectronics

LET9045S

STMicroelectronics

LET9045S by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 9 A, breakdown voltage of 80 V, and operates in the ultra-high frequency band. Ideal for compact, high-performance circuits.
A2V09H400-04SR3 by NXP Semiconductors

A2V09H400-04SR3

NXP Semiconductors

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260;
LET9045 by STMicroelectronics

LET9045

STMicroelectronics

LET9045 by STMicroelectronics is an N-channel RF FET designed for amplifier applications, featuring a max drain current of 9 A and breakdown voltage of 80 V. It operates in the ultra-high frequency band with a power dissipation of up to 79 W. This compact surface mount device ensures efficient performance in demanding environments.
PD57002-01 by STMicroelectronics

PD57002-01

STMicroelectronics

PD57002-01 by STMicroelectronics is an N-channel RF power FET designed for switching applications. It features a 65V breakdown voltage, operates at ultra-high frequencies, and supports a max drain current of 0.25A. Ideal for compact, high-performance circuits in various electronic devices.
PD55003TR-E by STMicroelectronics

PD55003TR-E

STMicroelectronics

STMicroelectronics PD55003TR-E is an N-CHANNEL RF Power FET with 40V DS Breakdown Voltage and 2.5A Drain Current. Ideal for AMPLIFIER applications in ULTRA HIGH FREQUENCY BAND, it features ENHANCEMENT MODE operation, 31.7W Power Dissipation, and operates up to 165°C temperature.
A2T21H141W24SR3 by NXP Semiconductors

A2T21H141W24SR3

NXP Semiconductors

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260;
A2T18S261W12NR3 by NXP Semiconductors

A2T18S261W12NR3

NXP Semiconductors

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 3; Maximum Time At Peak Reflow Temperature (s): 40; JESD-609 Code: e3; Terminal Finish: TIN;
MRF284S by Freescale Semiconductor

MRF284S

Freescale Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Position: DUAL; JESD-30 Code: R-CDFP-F2; Terminal Form: FLAT;
CLF1G0035S-100,112 by Ampleon Netherlands B V

CLF1G0035S-100,112

Ampleon Netherlands B V

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Element Material: GALLIUM NITRIDE; JESD-30 Code: R-CDFP-F2; Operating Mode: DEPLETION MODE;
MRF6V12250HR3 by Freescale Semiconductor

MRF6V12250HR3

Freescale Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Body Material: CERAMIC, METAL-SEALED COFIRED; No. of Terminals: 2; Minimum DS Breakdown Voltage: 110 V;
934065324112 by NXP Semiconductors

934065324112

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Shape: RECTANGULAR; Terminal Form: FLAT;
PD20010S-E by STMicroelectronics

PD20010S-E

STMicroelectronics

PD20010S-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 5 A, a breakdown voltage of 40 V, and operates in the L band. This surface-mount transistor excels in high-frequency performance with a power dissipation of up to 59 W.
CGH40010F by Wolfspeed

CGH40010F

Wolfspeed

CGH40010F by Wolfspeed is an N-CHANNEL RF Power FET with a 120V DS Breakdown Voltage. It operates in the C BAND frequency range and uses Gallium Nitride technology for high electron mobility. Ideal for amplifier applications, this transistor has a max operating temperature of 105°C and features a ceramic, metal-sealed co-fired package body.
MRF6V12500HSR5 by Freescale Semiconductor

MRF6V12500HSR5

Freescale Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Qualification: Not Qualified; Case Connection: SOURCE;
RF2L27015CG2 by STMicroelectronics

RF2L27015CG2

STMicroelectronics

RF Power Field-Effect Transistors;
MRF6VP3450HR5 by Freescale Semiconductor

MRF6VP3450HR5

Freescale Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Application: AMPLIFIER; Qualification: Not Qualified; Maximum Operating Temperature: 225 Cel;
934065607112 by NXP Semiconductors

934065607112

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Position: DUAL; Case Connection: SOURCE; Package Body Material: CERAMIC, METAL-SEALED COFIRED;