STMicroelectronics - IRF450

IRF450 by STMicroelectronics

Image shown is a representation only.

Manufacturer STMicroelectronics
Manufacturer's Part Number IRF450
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; Terminal Finish: TIN LEAD; JEDEC-95 Code: TO-3;
Datasheet IRF450 Datasheet
In Stock5,681
NAME DESCRIPTION
Package Body Material: METAL
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Turn On Time (ton): 150 ns
Maximum Drain Current (ID): 13 A
Maximum Pulsed Drain Current (IDM): 52 A
Sub-Category: FET General Purpose Power
Surface Mount: NO
Terminal Finish: TIN LEAD
No. of Terminals: 2
Maximum Power Dissipation (Abs): 150 W
Terminal Position: BOTTOM
Package Style (Meter): FLANGE MOUNT
Maximum Turn Off Time (toff): 210 ns
JESD-30 Code: O-MBFM-P2
No. of Elements: 1
Package Shape: ROUND
Terminal Form: PIN/PEG
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Power Dissipation Ambient: 150 W
Maximum Drain-Source On Resistance: .4 ohm
Avalanche Energy Rating (EAS): 650 mJ
Maximum Feedback Capacitance (Crss): 200 pF
JEDEC-95 Code: TO-3
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e0
Minimum DS Breakdown Voltage: 500 V
Qualification: Not Qualified
Additional Features: HIGH VOLTAGE, FAST SWITCHING
Maximum Drain Current (Abs) (ID): 12 A
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
5,681 $24.150 $137,196.150

Popular Products

Category Top Products