STMicroelectronics DRAM 45

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Clock Frequency (fCLK)	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Standby Current	Interleaved Burst Length	Maximum Access Time
M65KA256AL10W8	STMicroelectronics	SYNCHRONOUS DRAM	OTHER		DIE	8192	UNSPECIFIED	UNSPECIFIED	FOUR BANK PAGE BURST	YES	1	CMOS		NO LEAD	SYNCHRONOUS	60 mA	16777216 words	1,2,4,8,FP	YES	COMMON	1.8	1.8	16	UNCASED CHIP	WAFER	DRAMs		85 Cel	3-STATE	16MX16	16M	-30 Cel		UPPER	1	X-XUUC-N		1.95 V	105 MHz	Not Qualified	268435456 bit	1.7 V	AUTO/SELF REFRESH		.00001 Amp	1,2,4,8	7 ns
M65KA128AL10W5	STMicroelectronics	SYNCHRONOUS DRAM	OTHER		DIE	4096	UNSPECIFIED	UNSPECIFIED	FOUR BANK PAGE BURST	YES	1	CMOS		NO LEAD	SYNCHRONOUS	52 mA	2097152 words	1,2,4,8,FP	YES	COMMON	1.8	1.8	64	UNCASED CHIP	WAFER	DRAMs		90 Cel	3-STATE	2MX64	2M	-25 Cel		UPPER	1	X-XUUC-N	1	1.95 V	104 MHz	Not Qualified	134217728 bit	1.65 V	AUTO/SELF REFRESH		.00001 Amp	1,2,4,8	7 ns
8201002EX	STMicroelectronics	PAGE MODE DRAM	OTHER	16	DIP		RECTANGULAR	CERAMIC, GLASS-SEALED	FAST PAGE	NO	1	NMOS		THROUGH-HOLE	ASYNCHRONOUS		65536 words				5		1	IN-LINE				110 Cel		64KX1	64K	-55 Cel		DUAL	1	R-GDIP-T16		5.5 V			65536 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				150 ns
M38510/24401BEA	STMicroelectronics	PAGE MODE DRAM	OTHER	16	DIP		RECTANGULAR	UNSPECIFIED		NO	1	NMOS	MIL-M-38510 Class B	THROUGH-HOLE	ASYNCHRONOUS		65536 words				5		1	IN-LINE				110 Cel		64KX1	64K	-55 Cel		DUAL	1	R-XDIP-T16		5.5 V		Not Qualified	65536 bit	4.5 V	RAS ONLY REFRESH				150 ns
M65KG256AB8W8	STMicroelectronics	DDR1 DRAM	OTHER		DIE	8192	UNSPECIFIED	UNSPECIFIED	FOUR BANK PAGE BURST	YES	1	CMOS		NO LEAD	SYNCHRONOUS	130 mA	16777216 words	2,4,8,16	YES	COMMON	1.8	1.8	16	UNCASED CHIP	WAFER	DRAMs		85 Cel	3-STATE	16MX16	16M	-30 Cel		UPPER	1	X-XUUC-N		1.9 V	133 MHz	Not Qualified	268435456 bit	1.7 V	AUTO/SELF REFRESH		.00001 Amp	2,4,8,16	6 ns
M65KG512AA8W9	STMicroelectronics	DDR1 DRAM	OTHER		DIE	8192	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	YES	1	CMOS		NO LEAD	SYNCHRONOUS	140 mA	33554432 words	2,4,8,16	YES	COMMON	1.8	1.8	16	UNCASED CHIP	WAFER	DRAMs		105 Cel	3-STATE	32MX16	32M	-30 Cel		UPPER	1	R-XUUC-N		1.9 V	133 MHz	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH		.00001 Amp	2,4,8,16	6 ns
M38510/24005BEX	STMicroelectronics	PAGE MODE DRAM	OTHER	16	DIP		RECTANGULAR	UNSPECIFIED	PAGE	NO	1	NMOS		THROUGH-HOLE	ASYNCHRONOUS		16384 words				5		1	IN-LINE				110 Cel		16KX1	16K	-55 Cel		DUAL	1	R-XDIP-T16		5.5 V		Not Qualified	16384 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				250 ns
M65KA512AB83	STMicroelectronics	SYNCHRONOUS DRAM	OTHER			8192						CMOS				85 mA	33554432 words	1,2,4,8,FP		COMMON	1.8	1.8	16		DIE OR CHIP	DRAMs		85 Cel	3-STATE	32MX16	32M	-20 Cel							133 MHz	Not Qualified	536870912 bit				.00001 Amp	1,2,4,8	6 ns
M65KG512AB85	STMicroelectronics	DDR1 DRAM	OTHER			8192						CMOS				90 mA	33554432 words	2,4,8,16		COMMON	1.8	1.8	16		WAFER	DRAMs		85 Cel	3-STATE	32MX16	32M	-25 Cel							133 MHz	Not Qualified	536870912 bit				.00001 Amp	2,4,8,16	6 ns
M38510/24402BEX	STMicroelectronics	PAGE MODE DRAM	OTHER	16	DIP		RECTANGULAR	UNSPECIFIED		NO	1	NMOS		THROUGH-HOLE	ASYNCHRONOUS		65536 words				5		1	IN-LINE				110 Cel		64KX1	64K	-55 Cel		DUAL	1	R-XDIP-T16		5.5 V		Not Qualified	65536 bit	4.5 V	RAS ONLY REFRESH				150 ns
8201006EA	STMicroelectronics	PAGE MODE DRAM	OTHER	16	DIP		RECTANGULAR	CERAMIC, GLASS-SEALED	FAST PAGE	NO	1	NMOS	MIL-STD-883	THROUGH-HOLE	ASYNCHRONOUS		65536 words				5		1	IN-LINE				110 Cel		64KX1	64K	-55 Cel		DUAL	1	R-GDIP-T16		5.5 V			65536 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				150 ns
M65KC512AB8W8	STMicroelectronics	SYNCHRONOUS DRAM	OTHER		DIE	8192	UNSPECIFIED	UNSPECIFIED	FOUR BANK PAGE BURST	YES	1	CMOS		NO LEAD	SYNCHRONOUS	95 mA	16777216 words	1,2,4,8,FP	YES	COMMON	1.8	1.8	32	UNCASED CHIP	WAFER	DRAMs		85 Cel	3-STATE	16MX32	16M	-30 Cel		UPPER	1	X-XUUC-N		1.9 V	133 MHz	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH		.00001 Amp	1,2,4,8	6 ns
M65KA512AB8W8	STMicroelectronics	SYNCHRONOUS DRAM	OTHER		DIE	8192	UNSPECIFIED	UNSPECIFIED	FOUR BANK PAGE BURST	YES	1	CMOS		NO LEAD	SYNCHRONOUS	85 mA	33554432 words	1,2,4,8,FP	YES	COMMON	1.8	1.8	16	UNCASED CHIP	WAFER	DRAMs		85 Cel	3-STATE	32MX16	32M	-30 Cel		UPPER	1	X-XUUC-N	1	1.9 V	133 MHz	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH		.00001 Amp	1,2,4,8	6 ns
M65KG512AB8W8	STMicroelectronics	DDR1 DRAM	OTHER		DIE	8192	UNSPECIFIED	UNSPECIFIED	FOUR BANK PAGE BURST	YES	1	CMOS		NO LEAD	SYNCHRONOUS	90 mA	33554432 words	2,4,8,16	YES	COMMON	1.8	1.8	16	UNCASED CHIP	WAFER	DRAMs		85 Cel	3-STATE	32MX16	32M	-30 Cel		UPPER	1	X-XUUC-N	1	1.9 V	133 MHz	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH		.00001 Amp	2,4,8,16	6 ns
M65KA512AB8W	STMicroelectronics	SYNCHRONOUS DRAM	COMMERCIAL EXTENDED		DIE		RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	YES	1	CMOS		NO LEAD	SYNCHRONOUS		33554432 words		YES		1.8		16	UNCASED CHIP				85 Cel		32MX16	32M	-30 Cel		UPPER	1	R-XUUC-N		1.9 V		Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH				6 ns
M65KA128AE8W5	STMicroelectronics	SYNCHRONOUS DRAM			DIE	4096	UNSPECIFIED	UNSPECIFIED	FOUR BANK PAGE BURST	YES	1	CMOS		NO LEAD	SYNCHRONOUS	80 mA	8388608 words	1,2,4,8,FP	YES	COMMON	1.8	1.8	16	UNCASED CHIP	WAFER	DRAMs			3-STATE	8MX16	8M			UPPER	1	X-XUUC-N	1	1.95 V	133 MHz	Not Qualified	134217728 bit	1.7 V	AUTO/SELF REFRESH		.00001 Amp	1,2,4,8	6 ns
8201007EA	STMicroelectronics	PAGE MODE DRAM	OTHER	16	DIP		RECTANGULAR	CERAMIC, GLASS-SEALED	FAST PAGE	NO	1	NMOS	MIL-STD-883	THROUGH-HOLE	ASYNCHRONOUS		65536 words				5		1	IN-LINE				110 Cel		64KX1	64K	-55 Cel		DUAL	1	R-GDIP-T16		5.5 V			65536 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				200 ns
8201003EX	STMicroelectronics	PAGE MODE DRAM	OTHER	16	DIP		RECTANGULAR	CERAMIC, GLASS-SEALED	FAST PAGE	NO	1	NMOS		THROUGH-HOLE	ASYNCHRONOUS		65536 words				5		1	IN-LINE				110 Cel		64KX1	64K	-55 Cel		DUAL	1	R-GDIP-T16		5.5 V			65536 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				200 ns
M38510/24604BEX	STMicroelectronics	OTHER DRAM	MILITARY	16	DIP		RECTANGULAR	UNSPECIFIED		NO	1	NMOS	MIL-M-38510 Class B	THROUGH-HOLE	ASYNCHRONOUS	90 mA	262144 words			COMMON	5		1	IN-LINE	DIP16,.3			110 Cel		256KX1	256K	-55 Cel		DUAL		R-XDIP-T16		5.5 V		Not Qualified	262144 bit	4.5 V			.01 Amp		150 ns
M65KA256AF8W8	STMicroelectronics	SYNCHRONOUS DRAM	OTHER		DIE	8192	UNSPECIFIED	UNSPECIFIED	FOUR BANK PAGE BURST	YES	1	CMOS		NO LEAD	SYNCHRONOUS	80 mA	16777216 words	1,2,4,8,FP	YES	COMMON	1.8	1.8	16	UNCASED CHIP	WAFER	DRAMs		85 Cel	3-STATE	16MX16	16M	-30 Cel		UPPER	1	X-XUUC-N	1	1.95 V	133 MHz	Not Qualified	268435456 bit	1.7 V	AUTO/SELF REFRESH		.00001 Amp	1,2,4,8	6 ns
M65KG512AB8W9	STMicroelectronics	DDR1 DRAM	OTHER		DIE		UNSPECIFIED	UNSPECIFIED	FOUR BANK PAGE BURST	YES	1	CMOS		NO LEAD	SYNCHRONOUS		33554432 words		YES		1.8		16	UNCASED CHIP				105 Cel		32MX16	32M	-30 Cel		UPPER	1	X-XUUC-N		1.9 V		Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH				6 ns
8201002EA	STMicroelectronics	PAGE MODE DRAM	OTHER	16	DIP		RECTANGULAR	CERAMIC, GLASS-SEALED	FAST PAGE	NO	1	NMOS		THROUGH-HOLE	ASYNCHRONOUS		65536 words				5		1	IN-LINE				110 Cel		64KX1	64K	-55 Cel		DUAL	1	R-GDIP-T16		5.5 V			65536 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				150 ns
M38510/24602BEA	STMicroelectronics	PAGE MODE DRAM	OTHER	16	DIP	256	RECTANGULAR	CERAMIC		NO		MOS	38535Q/M;38534H;883B	THROUGH-HOLE			262144 words			SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	110 Cel	3-STATE	256KX1	256K	-55 Cel	Tin/Lead (Sn/Pb) - hot dipped	DUAL		R-XDIP-T16				Not Qualified	262144 bit			e0			150 ns
M65KG256AF8W8	STMicroelectronics	DDR1 DRAM	OTHER			8192						CMOS				90 mA	16777216 words	2,4,8,16		COMMON	1.8	1.8	16		WAFER	DRAMs		85 Cel	3-STATE	16MX16	16M	-30 Cel							133 MHz	Not Qualified	268435456 bit				.0006 Amp	2,4,8,16	6 ns
8201008EA	STMicroelectronics	PAGE MODE DRAM	OTHER	16	DIP		RECTANGULAR	CERAMIC, GLASS-SEALED	FAST PAGE	NO	1	NMOS	MIL-STD-883	THROUGH-HOLE	ASYNCHRONOUS		65536 words				5		1	IN-LINE				110 Cel		64KX1	64K	-55 Cel		DUAL	1	R-GDIP-T16		5.5 V			65536 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				120 ns
M65KA512AB83T	STMicroelectronics	SYNCHRONOUS DRAM	OTHER		DIE	8192	UNSPECIFIED	UNSPECIFIED	FOUR BANK PAGE BURST	YES	1	CMOS		NO LEAD	SYNCHRONOUS	85 mA	33554432 words	1,2,4,8,FP	YES	COMMON	1.8	1.8	16	UNCASED CHIP	DIE OR CHIP	DRAMs		85 Cel	3-STATE	32MX16	32M	-25 Cel		UPPER	1	X-XUUC-N	1	1.9 V	133 MHz	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH		.00001 Amp	1,2,4,8	6 ns
8201003EA	STMicroelectronics	PAGE MODE DRAM	OTHER	16	DIP		RECTANGULAR	CERAMIC, GLASS-SEALED	FAST PAGE	NO	1	NMOS		THROUGH-HOLE	ASYNCHRONOUS		65536 words				5		1	IN-LINE				110 Cel		64KX1	64K	-55 Cel		DUAL	1	R-GDIP-T16		5.5 V			65536 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				200 ns
8201001EX	STMicroelectronics	PAGE MODE DRAM	OTHER	16	DIP		RECTANGULAR	CERAMIC, GLASS-SEALED	FAST PAGE	NO	1	NMOS		THROUGH-HOLE	ASYNCHRONOUS		65536 words				5		1	IN-LINE				110 Cel		64KX1	64K	-55 Cel		DUAL	1	R-GDIP-T16		5.5 V			65536 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				150 ns
M38510/24604BEA	STMicroelectronics	PAGE MODE DRAM	OTHER	16	DIP	256	RECTANGULAR	CERAMIC		NO		MOS	38535Q/M;38534H;883B	THROUGH-HOLE			262144 words			SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	110 Cel	3-STATE	256KX1	256K	-55 Cel	Tin/Lead (Sn/Pb) - hot dipped	DUAL		R-XDIP-T16				Not Qualified	262144 bit			e0			150 ns
M38510/24401BEX	STMicroelectronics	PAGE MODE DRAM	OTHER	16	DIP		RECTANGULAR	UNSPECIFIED		NO	1	NMOS		THROUGH-HOLE	ASYNCHRONOUS		65536 words				5		1	IN-LINE				110 Cel		64KX1	64K	-55 Cel		DUAL	1	R-XDIP-T16		5.5 V		Not Qualified	65536 bit	4.5 V	RAS ONLY REFRESH				150 ns
M65KG512AB6W9	STMicroelectronics	DDR1 DRAM	OTHER		DIE	8192	UNSPECIFIED	UNSPECIFIED	FOUR BANK PAGE BURST	YES	1	CMOS		NO LEAD	SYNCHRONOUS	180 mA	33554432 words	2,4,8,16	YES	COMMON	1.8	1.8	16	UNCASED CHIP	WAFER	DRAMs		105 Cel	3-STATE	32MX16	32M	-30 Cel		UPPER	1	X-XUUC-N	1	1.9 V	166 MHz	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH		.00001 Amp	2,4,8,16	5 ns
IMS2600P-10	STMicroelectronics	PAGE MODE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	PLASTIC/EPOXY		NO		MOS		THROUGH-HOLE			65536 words			SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	64KX1	64K	0 Cel	TIN LEAD	DUAL		R-PDIP-T16				Not Qualified	65536 bit			e0			100 ns
M65KG512AB6W8	STMicroelectronics	DDR1 DRAM	OTHER			8192		PLASTIC/EPOXY				CMOS				180 mA	33554432 words	2,4,8,16		COMMON	1.8	1.8	16		WAFER	DRAMs		85 Cel	3-STATE	32MX16	32M	-30 Cel							166 MHz	Not Qualified	536870912 bit				.00001 Amp	2,4,8,16	5 ns
M38510/24403BEX	STMicroelectronics	PAGE MODE DRAM	OTHER	16	DIP		RECTANGULAR	UNSPECIFIED		NO	1	NMOS		THROUGH-HOLE	ASYNCHRONOUS		65536 words				5		1	IN-LINE				110 Cel		64KX1	64K	-55 Cel		DUAL	1	R-XDIP-T16		5.5 V		Not Qualified	65536 bit	4.5 V	RAS ONLY REFRESH				200 ns
M38510/24602BEX	STMicroelectronics	OTHER DRAM	MILITARY	16	DIP		RECTANGULAR	UNSPECIFIED		NO	1	NMOS	MIL-M-38510 Class B	THROUGH-HOLE	ASYNCHRONOUS	90 mA	262144 words			COMMON	5		1	IN-LINE	DIP16,.3			110 Cel		256KX1	256K	-55 Cel		DUAL		R-XDIP-T16		5.5 V		Not Qualified	262144 bit	4.5 V			.01 Amp		150 ns
M38510/24005BEA	STMicroelectronics	PAGE MODE DRAM	OTHER	16	DIP		RECTANGULAR	UNSPECIFIED	PAGE	NO	1	NMOS	MIL-M-38510 Class B	THROUGH-HOLE	ASYNCHRONOUS		16384 words				5		1	IN-LINE				110 Cel		16KX1	16K	-55 Cel		DUAL	1	R-XDIP-T16		5.5 V		Not Qualified	16384 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				250 ns
M65KG512AB85T	STMicroelectronics	DDR1 DRAM	OTHER		DIE		UNSPECIFIED	UNSPECIFIED	FOUR BANK PAGE BURST	YES	1	CMOS		NO LEAD	SYNCHRONOUS		33554432 words		YES		1.8		16	UNCASED CHIP				85 Cel		32MX16	32M	-25 Cel		UPPER	1	X-XUUC-N		1.9 V		Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH				6 ns
M38510/24403BEA	STMicroelectronics	PAGE MODE DRAM	OTHER	16	DIP		RECTANGULAR	UNSPECIFIED		NO	1	NMOS	MIL-M-38510 Class B	THROUGH-HOLE	ASYNCHRONOUS		65536 words				5		1	IN-LINE				110 Cel		64KX1	64K	-55 Cel		DUAL	1	R-XDIP-T16		5.5 V		Not Qualified	65536 bit	4.5 V	RAS ONLY REFRESH				200 ns
M65KG256AF8W8T	STMicroelectronics	DDR1 DRAM	COMMERCIAL EXTENDED		DIE	8192	UNSPECIFIED	UNSPECIFIED	FOUR BANK PAGE BURST	YES	1	CMOS		NO LEAD	SYNCHRONOUS	90 mA	16777216 words	2,4,8,16	YES	COMMON	1.8	1.8	16	UNCASED CHIP	WAFER	DRAMs		85 Cel	3-STATE	16MX16	16M	-30 Cel		UPPER	1	X-XUUC-N		1.9 V	133 MHz	Not Qualified	268435456 bit	1.7 V	AUTO/SELF REFRESH		.0006 Amp	2,4,8,16	6 ns
8201007EX	STMicroelectronics	PAGE MODE DRAM	OTHER	16	DIP		RECTANGULAR	CERAMIC, GLASS-SEALED	FAST PAGE	NO	1	NMOS	MIL-STD-883	THROUGH-HOLE	ASYNCHRONOUS		65536 words				5		1	IN-LINE				110 Cel		64KX1	64K	-55 Cel		DUAL	1	R-GDIP-T16		5.5 V			65536 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				200 ns
8201006EX	STMicroelectronics	PAGE MODE DRAM	OTHER	16	DIP		RECTANGULAR	CERAMIC, GLASS-SEALED	FAST PAGE	NO	1	NMOS	MIL-STD-883	THROUGH-HOLE	ASYNCHRONOUS		65536 words				5		1	IN-LINE				110 Cel		64KX1	64K	-55 Cel		DUAL	1	R-GDIP-T16		5.5 V			65536 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				150 ns
M38510/24004BEA	STMicroelectronics	PAGE MODE DRAM	OTHER	16	DIP		RECTANGULAR	UNSPECIFIED	PAGE	NO	1	NMOS	MIL-M-38510 Class B	THROUGH-HOLE	ASYNCHRONOUS		16384 words				5		1	IN-LINE				110 Cel		16KX1	16K	-55 Cel		DUAL	1	R-XDIP-T16		5.5 V		Not Qualified	16384 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				200 ns
M65KG256AF8W6T	STMicroelectronics	DDR1 DRAM	COMMERCIAL EXTENDED	149	BGA		UNSPECIFIED	UNSPECIFIED	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		16777216 words		YES		1.8		16	GRID ARRAY				85 Cel		16MX16	16M	-30 Cel		BOTTOM	1	X-XBGA-B149		1.9 V		Not Qualified	268435456 bit	1.7 V	AUTO/SELF REFRESH				6 ns
M65KA512AB8W3	STMicroelectronics	SYNCHRONOUS DRAM	OTHER			8192						CMOS				85 mA	33554432 words	1,2,4,8,FP		COMMON	1.8	1.8	16		WAFER	DRAMs		85 Cel	3-STATE	32MX16	32M	-30 Cel							133 MHz	Not Qualified	536870912 bit				.00001 Amp	1,2,4,8	6 ns
8201001EA	STMicroelectronics	PAGE MODE DRAM	OTHER	16	DIP		RECTANGULAR	CERAMIC, GLASS-SEALED	FAST PAGE	NO	1	NMOS		THROUGH-HOLE	ASYNCHRONOUS		65536 words				5		1	IN-LINE				110 Cel		64KX1	64K	-55 Cel		DUAL	1	R-GDIP-T16		5.5 V			65536 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				150 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.