Samsung DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
KM44C1010CJ-8	Samsung	FAST PAGE DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS	55 mA	1048576 words		NO	COMMON	5	5	4	SMALL OUTLINE	SOJ20/26,.34	DRAMs	1.27 mm	70 Cel		3-STATE	1MX4	1M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-J20		5.5 V	3.76 mm		7.62 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.001 Amp		17.145 mm	80 ns
KM41V4000BT-7	Samsung	FAST PAGE DRAM	COMMERCIAL	20	TSOP2	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS	60 mA	4194304 words		NO	SEPARATE	3.3	3.3	1	SMALL OUTLINE, THIN PROFILE	TSSOP20/26,.36	DRAMs	1.27 mm	70 Cel		3-STATE	4MX1	4M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G20		3.6 V	1.2 mm		7.62 mm	Not Qualified	4194304 bit	3 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0			.001 Amp		17.14 mm	70 ns
MR18R1628AF0-CK8	Samsung	RAMBUS DRAM MODULE		184	DIMM		RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1520 mA	134217728 words		YES	COMMON	2.5	1.8/2.5,2.5	18	MICROELECTRONIC ASSEMBLY	DIMM184,40	DRAMs	1 mm			3-STATE	128MX18	128M			DUAL	1	R-XDMA-N184	1	2.63 V		800 MHz		Not Qualified	2415919104 bit	2.37 V	SELF CONTAINED REFRESH
M471B5173BH0-MA	Samsung	DDR DRAM MODULE
M470L3224HU0-LB3	Samsung	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1540 mA	33554432 words		YES	COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel		3-STATE	32MX64	32M	0 Cel		DUAL	1	R-XDMA-N184		2.7 V		166 MHz		Not Qualified	2147483648 bit	2.3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.012 Amp			.7 ns
K4E660812C-TL500	Samsung	EDO DRAM	COMMERCIAL	32	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS		8388608 words		YES		3.3		8	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel			8MX8	8M	0 Cel		DUAL	1	R-PDSO-G32		3.6 V	1.2 mm		10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH		30	240			20.95 mm	50 ns
K4S56323LF-FR60	Samsung	SYNCHRONOUS DRAM	OTHER	90	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		200 mA	8388608 words	1,2,4,8,FP		COMMON	2.5	2.5	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	70 Cel			8MX32	8M	-25 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B90				166 MHz		Not Qualified	268435456 bit			e0			.0005 Amp	1,2,4,8		5.4 ns
K4Y50024UE-JCA2	Samsung	RAMBUS DRAM	OTHER	100	BGA	32768	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		710 mA	268435456 words			COMMON	1.8	1.8	2	GRID ARRAY	BGA100,11X16,50/32	DRAMs	.8 mm	100 Cel		3-STATE	256MX2	256M	0 Cel	MATTE TIN	BOTTOM		R-PBGA-B100	1					Not Qualified	536870912 bit			e3			.04 Amp			36 ns
M392T5663FBA-CF7	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2695 mA	268435456 words		YES	COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel		3-STATE	256MX72	256M	0 Cel		DUAL	1	R-XDMA-N240		1.9 V	18.45 mm	400 MHz		Not Qualified	19327352832 bit	1.7 V	AUTO/SELF REFRESH			260			133.35 mm	.4 ns
KM44V4104ASLS-6	Samsung	EDO DRAM	COMMERCIAL	24	TSOP2	2048	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS	100 mA	4194304 words		NO	COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP24/26,.36	DRAMs	1.27 mm	70 Cel		3-STATE	4MX4	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G24		3.6 V	1.2 mm		7.62 mm	Not Qualified	16777216 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	e0			.0002 Amp		17.14 mm	60 ns
K4S64163LH-BN1H0	Samsung	SYNCHRONOUS DRAM	OTHER	54	VFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		4194304 words		YES		2.5		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel			4MX16	4M	-25 Cel		BOTTOM	1	S-PBGA-B54	3	2.7 V	1 mm		8 mm	Not Qualified	67108864 bit	2.3 V	AUTO/SELF REFRESH						8 mm	7 ns
KM416V4100CS-L6T	Samsung	FAST PAGE DRAM	COMMERCIAL	50	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		110 mA	4194304 words		YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP50,.46,32	DRAMs	.8 mm	70 Cel		3-STATE	4MX16	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G50						Not Qualified	67108864 bit			e0			.0002 Amp			60 ns
KM416S8030T-G10	Samsung	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	165 mA	8388608 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	70 Cel		3-STATE	8MX16	8M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G54		3.6 V	1.2 mm	100 MHz	10.16 mm	Not Qualified	134217728 bit	3 V	AUTO/SELF REFRESH	e0			.001 Amp	1,2,4,8	22.22 mm	7 ns
KM416V256D-J6	Samsung	FAST PAGE DRAM	COMMERCIAL	40	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS	90 mA	262144 words		NO	COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ40,.44	DRAMs	1.27 mm	70 Cel		3-STATE	256KX16	256K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-J40		3.6 V	3.76 mm		10.16 mm	Not Qualified	4194304 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.0005 Amp		26.04 mm	60 ns
KM44V4100ASLT-7	Samsung	FAST PAGE DRAM	COMMERCIAL	24	TSOP2	2048	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS	90 mA	4194304 words		NO	COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP24/28,.46	DRAMs	1.27 mm	70 Cel		3-STATE	4MX4	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G24		3.6 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	e0			.0002 Amp		18.41 mm	70 ns
K4N56163QI-ZC2AT	Samsung	GDDR2 DRAM	OTHER	84	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		240 mA	16777216 words	4,8		COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm	95 Cel		3-STATE	16MX16	16M	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B84	3			350 MHz		Not Qualified	268435456 bit			e1		260	.01 Amp	4,8		.45 ns
M470T3354CZ0-LCC	Samsung	DDR DRAM MODULE	OTHER	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1080 mA	33554432 words		YES	COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	85 Cel		3-STATE	32MX64	32M	0 Cel		ZIG-ZAG	1	R-XZMA-N200	2	1.9 V		200 MHz		Not Qualified	2147483648 bit	1.7 V	AUTO/SELF REFRESH							.6 ns
K4E170412D-B5000	Samsung	EDO DRAM	COMMERCIAL	24	SOJ		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS		4194304 words				3.3		4	SMALL OUTLINE			1.27 mm	70 Cel			4MX4	4M	0 Cel		DUAL	1	R-PDSO-J24		3.6 V	3.76 mm		7.62 mm		16777216 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH						17.15 mm	50 ns
K4J55323QG-BC16	Samsung	GDDR3 DRAM	OTHER	136	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		860 mA	8388608 words	4,8		COMMON	1.8	1.8	32	GRID ARRAY, FINE PITCH	BGA136,12X17,32	DRAMs	.8 mm	85 Cel		3-STATE	8MX32	8M	0 Cel		BOTTOM		R-PBGA-B136				600 MHz		Not Qualified	268435456 bit						.08 Amp	4,8		.29 ns
K4H561638F-ULA2	Samsung	DDR1 DRAM	COMMERCIAL	66	TSSOP	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		300 mA	16777216 words	2,4,8		COMMON	2.5	2.5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46	DRAMs	.635 mm	70 Cel		3-STATE	16MX16	16M	0 Cel		DUAL		R-PDSO-G66	3			133 MHz		Not Qualified	268435456 bit					260		2,4,8
M368L3313DTL-CB3	Samsung	DDR DRAM MODULE	COMMERCIAL	184	DIMM	4096	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words		YES	COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM184	DRAMs	1.27 mm	70 Cel		3-STATE	32MX64	32M	0 Cel		DUAL	1	R-XDMA-N184	1	2.7 V		166 MHz		Not Qualified	2147483648 bit	2.3 V	AUTO/SELF REFRESH							.7 ns
K4Y50044UC-JCC4	Samsung	RAMBUS DRAM	OTHER	104	BGA	32768	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		1270 mA	134217728 words			COMMON	1.8	1.8	4	GRID ARRAY	BGA104,11X16,50/32	DRAMs	.8 mm	100 Cel		3-STATE	128MX4	128M	0 Cel	MATTE TIN	BOTTOM		R-PBGA-B104	1					Not Qualified	536870912 bit			e3			.025 Amp			28 ns
M366S6453JUS-C7A	Samsung	DDR1 DRAM MODULE	COMMERCIAL	168	DIMM	8192	RECTANGULAR	UNSPECIFIED	MULTI BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1504 mA	67108864 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel		3-STATE	64MX64	64M	0 Cel		DUAL	1	R-XDMA-N168		3.6 V		133 MHz		Not Qualified	4294967296 bit	3 V	AUTO/SELF REFRESH			260	.032 Amp		133.35 mm	5.4 ns
M366S3253CTU-C1H	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1520 mA	33554432 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel		3-STATE	32MX64	32M	0 Cel		DUAL	1	R-XDMA-N168	1	3.6 V		100 MHz		Not Qualified	2147483648 bit	3 V	AUTO/SELF REFRESH				.016 Amp			6 ns
KM416V256BLLTR-7	Samsung	FAST PAGE DRAM	COMMERCIAL	40	TSOP2-R	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS	80 mA	262144 words		YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	DRAMs	.8 mm	70 Cel	YES	3-STATE	256KX16	256K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G40		3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	e0			.0001 Amp		18.41 mm	70 ns
KM44V16000CS-45	Samsung	FAST PAGE DRAM	COMMERCIAL	32	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS	120 mA	16777216 words		NO	COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP32,.46	DRAMs	1.27 mm	70 Cel		3-STATE	16MX4	16M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G32		3.6 V	1.2 mm		10.16 mm	Not Qualified	67108864 bit	3 V	CAS BEFORE RAS/RAS ONLY/HIDDEN REFRESH	e0			.0005 Amp		20.95 mm	45 ns
K4F66162D-TI45	Samsung	FAST PAGE DRAM	INDUSTRIAL	50	TSOP	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		130 mA	4194304 words		NO	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP50,.46,32	DRAMs	.8 mm	85 Cel		3-STATE	4MX16	4M	-40 Cel	TIN LEAD	DUAL		R-PDSO-G50	3					Not Qualified	67108864 bit			e0			.0005 Amp			45 ns
M368L6423HUN-CB30	Samsung	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		2680 mA	67108864 words			COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM184	DRAMs	1.27 mm	70 Cel		3-STATE	64MX64	64M	0 Cel		DUAL		R-PDMA-N184				166 MHz		Not Qualified	4294967296 bit									.7 ns
K4D261638F-TC50T	Samsung	GDDR1 DRAM	COMMERCIAL	66	TSSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		245 mA	8388608 words	2,4,8		COMMON	2.5	2.5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46	DRAMs	.635 mm	65 Cel		3-STATE	8MX16	8M	0 Cel		DUAL		R-PDSO-G66	1			200 MHz		Not Qualified	134217728 bit						.045 Amp	2,4,8		.7 ns
K4F170811D-FL600	Samsung	FAST PAGE DRAM	COMMERCIAL	28	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		2097152 words		YES		5		8	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel			2MX8	2M	0 Cel		DUAL	1	R-PDSO-G28		5.5 V	1.2 mm		7.62 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH						18.41 mm	60 ns
K4H510438B-GLCC0	Samsung	DDR1 DRAM	COMMERCIAL	60	TBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		2.6		4	GRID ARRAY, THIN PROFILE			1 mm	70 Cel			128MX4	128M	0 Cel	TIN LEAD	BOTTOM	1	R-PBGA-B60		2.7 V	1.2 mm		10 mm	Not Qualified	536870912 bit	2.5 V	AUTO/SELF REFRESH	e0					12 mm	.65 ns
K4H1G0838A-ULCCT	Samsung	DDR1 DRAM	COMMERCIAL	66	TSSOP	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		250 mA	134217728 words	2,4,8		COMMON	2.6	2.6	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46	DRAMs	.635 mm	70 Cel		3-STATE	128MX8	128M	0 Cel	MATTE TIN	DUAL		R-PDSO-G66	1			200 MHz		Not Qualified	1073741824 bit			e3			.015 Amp	2,4,8		.65 ns
KM41C16002ALLS-6	Samsung	STATIC COLUMN DRAM	COMMERCIAL	24	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	STATIC COLUMN	YES	1	CMOS	GULL WING	ASYNCHRONOUS	80 mA	16777216 words		YES	SEPARATE	5	5	1	SMALL OUTLINE, THIN PROFILE	TSOP24/26,.36	SRAMs	1.27 mm	70 Cel		3-STATE	16MX1	16M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G24		5.5 V	1.2 mm		7.62 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	e0			.0002 Amp		17.14 mm	60 ns
K4F640812E-JL500	Samsung	FAST PAGE DRAM	COMMERCIAL	32	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		110 mA	8388608 words		YES	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ32,.44	DRAMs	1.27 mm	70 Cel		3-STATE	8MX8	8M	0 Cel		DUAL		R-PDSO-J32						Not Qualified	67108864 bit						.0002 Amp			50 ns
KMM581000B-10	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	30	SIMM	512	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	480 mA	1048576 words			COMMON	5	5	8	MICROELECTRONIC ASSEMBLY	SIM30	DRAMs	2.54 mm	70 Cel		3-STATE	1MX8	1M	0 Cel		SINGLE	1	R-XSMA-N30		5.5 V	20.447 mm			Not Qualified	8388608 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				.008 Amp			100 ns
M312L2920DUS-CA2	Samsung	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	6480 mA	134217728 words		YES	COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184	Other Memory ICs	1.27 mm	70 Cel		3-STATE	128MX72	128M	0 Cel		DUAL	1	R-XDMA-N184		2.7 V		133 MHz		Not Qualified	9663676416 bit	2.3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.42 Amp			.75 ns
M393T2950BG0-LD5	Samsung	DDR DRAM MODULE		240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words		YES		1.8		72	MICROELECTRONIC ASSEMBLY							128MX72	128M			DUAL	1	R-XDMA-N240		1.9 V				Not Qualified	9663676416 bit	1.7 V	SELF CONTAINED REFRESH		30	230				.5 ns
K4S641633H-BL1L0	Samsung	SYNCHRONOUS DRAM	OTHER	54	VFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		4194304 words		YES		3		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	70 Cel			4MX16	4M	-25 Cel		BOTTOM	1	S-PBGA-B54	3	3.6 V	1 mm		8 mm	Not Qualified	67108864 bit	2.7 V	AUTO/SELF REFRESH						8 mm	7 ns
M383L6423BT1-LA2	Samsung	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	5010 mA	67108864 words		YES	COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184	DRAMs	1.27 mm	70 Cel		3-STATE	64MX72	64M	0 Cel		DUAL	1	R-XDMA-N184	1	2.7 V		133 MHz		Not Qualified	4831838208 bit	2.3 V	AUTO/SELF REFRESH							.75 ns
KM48V8004BS-L5K	Samsung	EDO DRAM	COMMERCIAL	32	TSOP	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		120 mA	8388608 words		YES	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46	DRAMs	1.27 mm	70 Cel		3-STATE	8MX8	8M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G32						Not Qualified	67108864 bit			e0			.0003 Amp			50 ns
KM44C4002ALK-6	Samsung	STATIC COLUMN DRAM	COMMERCIAL	24	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	STATIC COLUMN	YES	1	CMOS	J BEND	ASYNCHRONOUS	80 mA	4194304 words		NO	COMMON	5	5	4	SMALL OUTLINE	SOJ24/26,.34	SRAMs	1.27 mm	70 Cel		3-STATE	4MX4	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-J24		5.5 V	3.68 mm		7.62 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.0003 Amp		17.145 mm	60 ns
KM44C4104AJ-7	Samsung	EDO DRAM	COMMERCIAL	24	SOJ	2048	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS	90 mA	4194304 words		NO	COMMON	5	5	4	SMALL OUTLINE	SOJ24/28,.44	DRAMs	1.27 mm	70 Cel		3-STATE	4MX4	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-J24		5.5 V	3.76 mm		10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.001 Amp		18.41 mm	70 ns
K4M28163PH-RG90	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	4096	SQUARE	PLASTIC/EPOXY		YES		CMOS	BALL		85 mA	8388608 words	1,2,4,8,FP		COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	85 Cel		3-STATE	8MX16	8M	-25 Cel		BOTTOM		S-PBGA-B54	1			111 MHz		Not Qualified	134217728 bit						.00001 Amp	1,2,4,8		7 ns
KM48C2000LJ-8	Samsung	FAST PAGE DRAM	COMMERCIAL	28	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS	80 mA	2097152 words		NO	COMMON	5	5	8	SMALL OUTLINE	SOJ28,.44	DRAMs	1.27 mm	70 Cel		3-STATE	2MX8	2M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J28		5.5 V	3.76 mm		10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0			.0003 Amp		18.42 mm	80 ns
K4E660412D-JL600	Samsung	EDO DRAM	COMMERCIAL	32	SOJ		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS		16777216 words		YES		3.3		4	SMALL OUTLINE			1.27 mm	70 Cel			16MX4	16M	0 Cel		DUAL	1	R-PDSO-J32		3.6 V	3.76 mm		10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH		30	225			20.96 mm	60 ns
KM48C8100AS-7	Samsung	FAST PAGE DRAM	COMMERCIAL	32	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS	130 mA	8388608 words		NO	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46	DRAMs	1.27 mm	70 Cel		3-STATE	8MX8	8M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G32		5.5 V	1.2 mm		10.16 mm	Not Qualified	67108864 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.001 Amp		20.95 mm	70 ns
M332F0803BF0-L600	Samsung	EDO DRAM MODULE	COMMERCIAL	72	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		440 mA	8388608 words		YES	COMMON	3.3	3.3	32	MICROELECTRONIC ASSEMBLY	DIMM72	DRAMs	1.27 mm	70 Cel		3-STATE	8MX32	8M	0 Cel		DUAL		R-PDMA-N72						Not Qualified	268435456 bit						.0012 Amp			60 ns
KM44V4004CJ-5	Samsung

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.