5 EEPROM 629

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	I2C Control Byte	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Programming Voltage (V)	Data Polling
24AA16HT-I/OT	Microchip Technology	EEPROM	INDUSTRIAL	5	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words	2.5	1.8/5	8	SMALL OUTLINE	TSOP5/6,.11,37	EEPROMs	200	.95 mm	85 Cel		OPEN-DRAIN	256X8	256	-40 Cel	Matte Tin (Sn) - annealed	1010MMMR	DUAL	1	HARDWARE	R-PDSO-G5	1	5.5 V	1.45 mm	1000000 Write/Erase Cycles	.1 MHz	1.55 mm	Not Qualified	5 ms	I2C	2048 bit	1.7 V			e3	40	260	.000001 Amp	2.9 mm	2.5
24AA04T-I/OT	Microchip Technology	EEPROM		5	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	512 words	2.5	2/5	8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP5/6,.11,37	EEPROMs	200	.95 mm	85 Cel		OPEN-DRAIN	512X8	512	-40 Cel	MATTE TIN	1010XXMR	DUAL	1	HARDWARE	R-PDSO-G5	1	5.5 V	1.45 mm	1000000 Write/Erase Cycles	.4 MHz	1.63 mm	Not Qualified	5 ms	I2C	4096 bit	1.7 V	1.7V TO 2.5V @ 0.1MHz		e3		260	.000001 Amp	2.95 mm	2.5
24LC08BT-I/OTG	Microchip Technology	EEPROM	INDUSTRIAL	5	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	1024 words	5	3/5	8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP5/6,.11,37	EEPROMs	200	.95 mm	85 Cel			1KX8	1K	-40 Cel	MATTE TIN	1010XMMR	DUAL		HARDWARE	R-PDSO-G5	1	5.5 V	1.45 mm	1000000 Write/Erase Cycles	.4 MHz	1.55 mm	Not Qualified	5 ms	I2C	8192 bit	2.5 V			e3		260	.000001 Amp	2.9 mm
24LC04BT-E/OT	Microchip Technology	EEPROM		5	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	512 words	5	3/5	8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP5/6,.11,37	EEPROMs	200	.95 mm	125 Cel		OPEN-DRAIN	512X8	512	-40 Cel	MATTE TIN	1010XXMR	DUAL	1	HARDWARE	R-PDSO-G5	1	5.5 V	1.45 mm	1000000 Write/Erase Cycles	.4 MHz	1.63 mm	Not Qualified	5 ms	I2C	4096 bit	2.5 V			e3		260	.000005 Amp	2.95 mm	5
24AA01T-I/LT	Microchip Technology	EEPROM	INDUSTRIAL	5	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	128 words	2.5	2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP5/6,.08	EEPROMs	200	.65 mm	85 Cel			128X8	128	-40 Cel	Matte Tin (Sn) - annealed	1010XXXR	DUAL	1	HARDWARE	R-PDSO-G5	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	.4 MHz	1.25 mm	Not Qualified	5 ms	I2C	1024 bit	1.7 V	1.7V TO 2.5V @ 0.1MHz		e3	40	260	.000001 Amp	2 mm	2.5
24LC64FT-E/OT	Microchip Technology	EEPROM	AUTOMOTIVE	5	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	3 mA	8192 words	5	3/5	8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP5/6,.11,37	EEPROMs	200	.95 mm	125 Cel		OPEN-DRAIN	8KX8	8K	-40 Cel	Matte Tin (Sn) - annealed	1010DDDR	DUAL	1	HARDWARE	R-PDSO-G5	1	5.5 V	1.45 mm	1000000 Write/Erase Cycles	.4 MHz	1.55 mm	Not Qualified	5 ms	I2C	65536 bit	2.5 V			e3	40	260	.000005 Amp	2.9 mm	5
AT24C16D-STUM-T	Microchip Technology	EEPROM	INDUSTRIAL	5	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	1 mA	2048 words		1.8/3.3	8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSOP5/6,.11,37	EEPROMs	100	.95 mm	85 Cel		OPEN-DRAIN	2KX8	2K	-40 Cel	MATTE TIN	1010MMMR	DUAL	1	HARDWARE	R-PDSO-G5		3.6 V	1 mm	1000000 Write/Erase Cycles	1 MHz	1.6 mm	Not Qualified	5 ms	I2C	16384 bit	2.5 V	ALSO OPERATES 1.7V AT 100 KHZ STD MODE AND 400 KHZ @ FAST MODE		e3			.0000008 Amp	2.9 mm
24FC64FT-I/OT	Microchip Technology	EEPROM	INDUSTRIAL	5	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	3 mA	8192 words	5	2/5	8	SMALL OUTLINE, THIN PROFILE	TSOP5/6,.11,37	EEPROMs	200	.95 mm	85 Cel		OPEN-DRAIN	8KX8	8K	-40 Cel	MATTE TIN	1010DDDR	DUAL	1	HARDWARE	R-PDSO-G5		5.5 V	1.45 mm	1000000 Write/Erase Cycles	1 MHz	1.55 mm	Not Qualified	5 ms	I2C	65536 bit	1.7 V			e3			.000001 Amp	2.9 mm	5
93LC46BT-I/OT15KVAO	Microchip Technology	EEPROM	INDUSTRIAL	5	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	2 mA	64 words	5		16	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP5/6,.11,37		200	.95 mm	85 Cel			64X16	64	-40 Cel			DUAL	1		R-PDSO-G5		5.5 V	1.45 mm	1000000 Write/Erase Cycles	2 MHz	1.63 mm		6 ms	MICROWIRE	1024 bit	2.5 V						.000001 Amp	2.95 mm	5
24LC08BT-I/OTRVE	Microchip Technology	EEPROM	INDUSTRIAL	5	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	3 mA	1024 words	5		8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP5/6,.11,37		200	.95 mm	85 Cel		OPEN-DRAIN	1KX8	1K	-40 Cel		1010XMMR	DUAL	1	HARDWARE	R-PDSO-G5		5.5 V	1.45 mm	1000000 Write/Erase Cycles	.4 MHz	1.55 mm		5 ms	I2C	8192 bit	2.5 V				30	260	.000001 Amp	2.9 mm	5
24LC16BHT-I/OT	Microchip Technology	EEPROM	INDUSTRIAL	5	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words	5	3/5	8	SMALL OUTLINE	TSOP5/6,.11,37	EEPROMs	200	.95 mm	85 Cel		OPEN-DRAIN	256X8	256	-40 Cel	Matte Tin (Sn)	1010MMMR	DUAL	1	HARDWARE	R-PDSO-G5	1	5.5 V	1.45 mm	1000000 Write/Erase Cycles	.4 MHz	1.55 mm	Not Qualified	5 ms	I2C	2048 bit	2.5 V			e3	40	260	.000001 Amp	2.9 mm	5
AT24C16C-STUM-T	Microchip Technology	EEPROM	INDUSTRIAL	5	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	3 mA	2048 words	3		8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSOP5/6,.11,37		100	.95 mm	85 Cel		OPEN-DRAIN	2KX8	2K	-40 Cel	MATTE TIN	1010DDDR	DUAL	1	HARDWARE	R-PDSO-G5	1	5.5 V	1 mm	1000000 Write/Erase Cycles	1 MHz	1.6 mm		5 ms	I2C	16384 bit	2.5 V	ALSO OPERATES AT 0.4MHZ AT 1.7-5.5 SUPPLY VOLTAGE		e3	40	260	.000006 Amp	2.9 mm	3
AT24C01D-STUM-T	Microchip Technology	EEPROM	INDUSTRIAL	5	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	1 mA	128 words	3	1.8/3.3	8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSOP5/6,.11,37	EEPROMs	100	.95 mm	85 Cel		OPEN-DRAIN	128X8	128	-40 Cel	MATTE TIN	1010DDDR	DUAL	1	HARDWARE	R-PDSO-G5	1	3.6 V	1 mm	1000000 Write/Erase Cycles	1 MHz	1.6 mm	Not Qualified	5 ms	I2C	1024 bit	2.5 V	1.7V TO 3.6V @ 0.4MHz		e3	40	260	.0000008 Amp	2.9 mm	3
24LC32AT-E/OT	Microchip Technology	EEPROM	AUTOMOTIVE	5	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	4096 words	5	3/5	8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP5/6,.11,37	EEPROMs	200	.95 mm	125 Cel			4KX8	4K	-40 Cel	MATTE TIN	1010000R	DUAL		HARDWARE	R-PDSO-G5	1	5.5 V	1.45 mm	1000000 Write/Erase Cycles	.4 MHz	1.55 mm	Not Qualified	5 ms	I2C	32768 bit	2.5 V	2-WIRE SERIAL INTERFACE; DATA RETENTION > 200 YEARS; 1000000 ERASE/WRITE CYCLES GUARANTEED		e3		260	.000005 Amp	2.9 mm
24AA64FT-I/OT	Microchip Technology	EEPROM	INDUSTRIAL	5	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	3 mA	8192 words	5	2/5	8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP5/6,.11,37	EEPROMs	200	.95 mm	85 Cel		OPEN-DRAIN	8KX8	8K	-40 Cel	Matte Tin (Sn) - annealed	1010DDDR	DUAL	1	HARDWARE	R-PDSO-G5	1	5.5 V	1.45 mm	1000000 Write/Erase Cycles	.4 MHz	1.55 mm	Not Qualified	5 ms	I2C	65536 bit	1.7 V			e3	40	260	.000001 Amp	2.9 mm	5
AT24C32D-STUM-T	Microchip Technology	EEPROM	INDUSTRIAL	5	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	3 mA	4096 words	3		8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSOP5/6,.11,37		100	.95 mm	85 Cel		OPEN-DRAIN	4KX8	4K	-40 Cel	MATTE TIN	1010000R	DUAL	1	HARDWARE	R-PDSO-G5	1	5.5 V	1 mm	1000000 Write/Erase Cycles	1 MHz	1.6 mm		5 ms	I2C	32768 bit	2.5 V	ALSO OPERATES AT 1.7V TO 5.5V @0.4MHZ		e3	40	260	.000006 Amp	2.9 mm	3
24LC08BT-E/OT	Microchip Technology	EEPROM	AUTOMOTIVE	5	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	1024 words	5		8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP5/6,.11,37		200	.95 mm	125 Cel		OPEN-DRAIN	1KX8	1K	-40 Cel	MATTE TIN	1010XMMR	DUAL	1	HARDWARE	R-PDSO-G5	1	5.5 V	1.45 mm	1000000 Write/Erase Cycles	.4 MHz	1.55 mm	Not Qualified	5 ms	I2C	8192 bit	2.5 V			e3		260	.000005 Amp	2.9 mm	5
AT24MAC602-STUM-T	Microchip Technology	EEPROM	INDUSTRIAL	5	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words	2.5	1.8/5	8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSOP5/6,.11,37	EEPROMs	100	.95 mm	85 Cel		OPEN-DRAIN	256X8	256	-40 Cel	MATTE TIN	1010DDDR	DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G5		5.5 V	1 mm	1000000 Write/Erase Cycles	1 MHz	1.6 mm	Not Qualified	5 ms	I2C	2048 bit	1.7 V			e3			.000006 Amp	2.9 mm	2.5
M24128-BFMH6TG	STMicroelectronics	EEPROM	INDUSTRIAL	5	VBCC	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		BUTT	SERIAL	SYNCHRONOUS	2.5 mA	16384 words		1.8/5	8	CHIP CARRIER, VERY THIN PROFILE	SOLCC5,.06,16	EEPROMs	200	.4 mm	85 Cel			16KX8	16K	-40 Cel		1010DDDR	BOTTOM		HARDWARE	R-XBCC-B5	1	5.5 V	.6 mm	4000000 Write/Erase Cycles	1 MHz	1.4 mm	Not Qualified	5 ms	I2C	131072 bit	1.7 V						.000001 Amp	1.7 mm
24AA16T-E/OT16KVAO	Microchip Technology	EEPROM	AUTOMOTIVE	5	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	2048 words	2.5		8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP5/6,.11,37		200	.95 mm	125 Cel			2KX8	2K	-40 Cel		1010MMMR	DUAL	1	HARDWARE	R-PDSO-G5		5.5 V	1.45 mm	1000000 Write/Erase Cycles	.4 MHz	1.55 mm		5 ms	I2C	16384 bit	1.7 V	1.7V TO 2.5V @ 0.1MHz					.000005 Amp	2.9 mm	2.5
24LC00T-I/OT	Microchip Technology	EEPROM	INDUSTRIAL	5	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	2 mA	16 words	5	3/5	8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP5/6,.11,37	EEPROMs	200	.95 mm	85 Cel		OPEN-DRAIN	16X8	16	-40 Cel	MATTE TIN	1010XXXR	DUAL	1		R-PDSO-G5	1	5.5 V	1.45 mm	1000000 Write/Erase Cycles	.4 MHz	1.5 mm	Not Qualified	4 ms	I2C	128 bit	4.5 V			e3		260	.000001 Amp	2.9 mm	5
24LC01BTE/OT16KVAO	Microchip Technology	EEPROM	AUTOMOTIVE	5	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	128 words	5		8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH				.95 mm	125 Cel			128X8	128	-40 Cel	MATTE TIN		DUAL			R-PDSO-G5		5.5 V	1.45 mm		.4 MHz	1.6 mm		5 ms	I2C	1024 bit	2.5 V			e3	30	260		2.9 mm
24LC16BHT-E/OT	Microchip Technology	EEPROM	AUTOMOTIVE	5	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	2048 words	5	3/5	8	SMALL OUTLINE	TSOP5/6,.11,37	EEPROMs	200	.95 mm	125 Cel		OPEN-DRAIN	2KX8	2K	-40 Cel	Matte Tin (Sn)	1010MMMR	DUAL	1	HARDWARE	R-PDSO-G5	1	5.5 V	1.45 mm	1000000 Write/Erase Cycles	.4 MHz	1.55 mm	Not Qualified	5 ms	I2C	16384 bit	2.5 V			e3	40	260	.000005 Amp	2.9 mm	5
AT24CS02-STUM-T	Microchip Technology	EEPROM	INDUSTRIAL	5	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	2048 words	5	1.8/5	8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSOP5/6,.11,37	EEPROMs	100	.95 mm	85 Cel	NO	3-STATE	2048X8	2048	-40 Cel	MATTE TIN	1010XXXR	DUAL	1	HARDWARE	R-PDSO-G5	1	5.5 V	1 mm	1000000 Write/Erase Cycles	1 MHz	1.6 mm	Not Qualified	5 ms	I2C	16384 bit	1.7 V			e3	30	260	.000001 Amp	2.9 mm	5
24AA04HT-I/OT	Microchip Technology	EEPROM	INDUSTRIAL	5	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	512 words	2.5	2/5	8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP5/6,.11,37	EEPROMs	200	.95 mm	85 Cel		OPEN-DRAIN	512X8	512	-40 Cel	Matte Tin (Sn) - annealed	1010XXMR	DUAL	1	HARDWARE	R-PDSO-G5	1	5.5 V	1.45 mm	1000000 Write/Erase Cycles	.4 MHz	1.63 mm	Not Qualified	5 ms	I2C	4096 bit	1.7 V		16	e3	40	260	.000001 Amp	2.95 mm	2.5	YES
CAT24C08TDI-GT3	Onsemi	EEPROM	INDUSTRIAL	5	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	8192 words	3.3	2/5	1	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSOP5/6,.11,37	EEPROMs	100	.95 mm	85 Cel			8KX1	8K	-40 Cel	NICKEL PALLADIUM GOLD	10100MMR	DUAL		HARDWARE	R-PDSO-G5	1	5.5 V	1 mm	1000000 Write/Erase Cycles	.4 MHz	1.6 mm	Not Qualified	5 ms	I2C	8192 bit	1.7 V			e4	30	260	.000001 Amp	2.9 mm
CAT24C16C5ATR	Onsemi	EEPROM	INDUSTRIAL	5	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	2 mA	16384 words	3.3	1.8/5	1	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA5,3X3,10/6	EEPROMs	100	.3 mm	85 Cel			16KX1	16K	-40 Cel	TIN SILVER COPPER	1010MMMR	BOTTOM		HARDWARE	R-PBGA-B5	1	5.5 V	.39 mm	1000000 Write/Erase Cycles	.4 MHz	.84 mm	Not Qualified	5 ms	I2C	16384 bit	1.7 V			e1	30	260	.000001 Amp	.86 mm
24LC02BTE/OT16KVAO	Microchip Technology	EEPROM	AUTOMOTIVE	5	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words	5		8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH				.95 mm	125 Cel			256X8	256	-40 Cel			DUAL			R-PDSO-G5		5.5 V	1.45 mm		.4 MHz	1.6 mm		5 ms	I2C	2048 bit	2.5 V							2.9 mm
M24C02-FMH6TG	STMicroelectronics	EEPROM	INDUSTRIAL	5	VSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	.8 mA	256 words	1.8		8	SMALL OUTLINE, VERY THIN PROFILE	SOLCC5,.06,16		200	.4 mm	85 Cel		OPEN-DRAIN	256X8	256	-40 Cel		1010000R	DUAL		HARDWARE	R-PDSO-N5	1	5.5 V	.6 mm	4000000 Write/Erase Cycles	.4 MHz	1.4 mm		5 ms	I2C	2048 bit	1.7 V						.000001 Amp	1.7 mm
AT24C08C-STUM-T	Microchip Technology	EEPROM	INDUSTRIAL	5	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	3 mA	1024 words	3	1.8/5	8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSOP5/6,.11,37	EEPROMs	100	.95 mm	85 Cel		OPEN-DRAIN	1KX8	1K	-40 Cel	MATTE TIN	10100DDR	DUAL	1	HARDWARE	R-PDSO-G5	1	5.5 V	1 mm	1000000 Write/Erase Cycles	1 MHz	1.6 mm	Not Qualified	5 ms	I2C	8192 bit	2.5 V	ALSO OPERATES AT 1.7V TO 2.5V @0.4MHZ		e3	30	260	.000006 Amp	2.9 mm	3
24AA02E64T-E/OT	Microchip Technology	EEPROM	AUTOMOTIVE	5	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words	5	1.8/5	8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP5/6,.11,37	EEPROMs	200	.95 mm	125 Cel		OPEN-DRAIN	256X8	256	-40 Cel	MATTE TIN	1010DDDR	DUAL	1		R-PDSO-G5		5.5 V	1.45 mm	1000000 Write/Erase Cycles	.4 MHz	1.55 mm	Not Qualified	5 ms	I2C	2048 bit	2.5 V	1.7V TO 2.5V @ 0.1MHz		e3			.000005 Amp	2.9 mm	5
AT24C01C-STUM-T	Microchip Technology	EEPROM	INDUSTRIAL	5	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	128 words	2.5		8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSOP5/6,.11,37		100	.95 mm	85 Cel		OPEN-DRAIN	128X8	128	-40 Cel	MATTE TIN	1010DDDR	DUAL	1	HARDWARE	R-PDSO-G5	1	5.5 V	1 mm	1000000 Write/Erase Cycles	1 MHz	1.6 mm		5 ms	I2C	1024 bit	1.7 V			e3	40	260	.000006 Amp	2.9 mm	2.5
24AA04T-I/OTG	Microchip Technology	EEPROM	INDUSTRIAL	5	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	512 words	5	2/5	8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP5/6,.11,37	EEPROMs	200	.95 mm	85 Cel	NO		512X8	512	-40 Cel	MATTE TIN	1010XXMR	DUAL		HARDWARE	R-PDSO-G5	1	5.5 V	1.45 mm	1000000 Write/Erase Cycles	.1 MHz	1.55 mm	Not Qualified	5 ms	I2C	4096 bit	1.7 V			e3		260	.000001 Amp	2.9 mm
24CW640T-I/OT	Microchip Technology	EEPROM	INDUSTRIAL	5	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	1 mA	8192 words	1.8		8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP5/6,.11,37		200	.95 mm	85 Cel		OPEN-DRAIN	8KX8	8K	-40 Cel		1010DDDR	DUAL	1	SOFTWARE	R-PDSO-G5		5.5 V	1.45 mm	1000000 Write/Erase Cycles	1 MHz	1.63 mm		5 ms	I2C	65536 bit	1.6 V				NOT SPECIFIED	NOT SPECIFIED	.000001 Amp	2.95 mm	1.8
AT24C02C-STUM-T	Microchip Technology	EEPROM	INDUSTRIAL	5	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words	2.5		8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSOP5/6,.11,37		100	.95 mm	85 Cel		OPEN-DRAIN	256X8	256	-40 Cel	MATTE TIN	1010DDDR	DUAL	1	HARDWARE	R-PDSO-G5	1	5.5 V	1 mm	1000000 Write/Erase Cycles	1 MHz	1.6 mm		5 ms	I2C	2048 bit	1.7 V			e3	40	260	.000006 Amp	2.9 mm	2.5
24FC01T-I/OT	Microchip Technology	EEPROM	INDUSTRIAL	5	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	128 words	2.5		8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP5/6,.11,37		200	.95 mm	85 Cel			128X8	128	-40 Cel		1010XXXR	DUAL	1	HARDWARE	R-PDSO-G5		5.5 V	1.45 mm	1000000 Write/Erase Cycles	1 MHz	1.63 mm		5 ms	I2C	1024 bit	1.7 V						.000001 Amp	2.95 mm	2.5
AT24CS32-STUM-T	Microchip Technology	EEPROM	INDUSTRIAL	5	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	4096 words	5	1.8/5	8	SMALL OUTLINE, THIN PROFILE	TSOP5/6,.11,37	EEPROMs	100	.95 mm	85 Cel		OPEN-DRAIN	4KX8	4K	-40 Cel	MATTE TIN	1010DDDR	DUAL	1	HARDWARE	R-PDSO-G5		5.5 V	1 mm	1000000 Write/Erase Cycles	1 MHz	1.6 mm	Not Qualified	5 ms	I2C	32768 bit	2.5 V			e3			.000006 Amp	2.9 mm	5
24FC64T-I/OT	Microchip Technology	EEPROM	INDUSTRIAL	5	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	8192 words	4.5	2/5	8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP5/6,.11,37	EEPROMs	200	.95 mm	85 Cel		OPEN-DRAIN	8KX8	8K	-40 Cel	Matte Tin (Sn) - annealed	1010DDDR	DUAL	1	HARDWARE	R-PDSO-G5	1	5.5 V	1.45 mm	1000000 Write/Erase Cycles	1 MHz	1.55 mm	Not Qualified	5 ms	I2C	65536 bit	2.5 V	ALSO OPERATES AT 1.7V TO 2.5V @ 0.4MHZ		e3	40	260	.000001 Amp	2.9 mm	4.5
24LC04BHT-E/OT	Microchip Technology	EEPROM	AUTOMOTIVE	5	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	512 words	5	3/5	8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP5/6,.11,37	EEPROMs	200	.95 mm	125 Cel		OPEN-DRAIN	512X8	512	-40 Cel	Matte Tin (Sn) - annealed	1010XXMR	DUAL	1	HARDWARE	R-PDSO-G5	1	5.5 V	1.45 mm	1000000 Write/Erase Cycles	.4 MHz	1.63 mm	Not Qualified	5 ms	I2C	4096 bit	2.5 V		16	e3	40	260	.000005 Amp	2.95 mm	5	YES
CAT24C02TDI-GT3	Onsemi	EEPROM	INDUSTRIAL	5	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	2048 words	3.3	1.8/5	1	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSOP5/6,.11,37	EEPROMs	100	.95 mm	85 Cel			2KX1	2K	-40 Cel	NICKEL PALLADIUM GOLD	1010000R	DUAL		HARDWARE	R-PDSO-G5	1	5.5 V	1 mm	1000000 Write/Erase Cycles	.4 MHz	1.6 mm	Not Qualified	5 ms	I2C	2048 bit	1.7 V			e4		260	.000003 Amp	2.9 mm
24LC01BT-I/LT	Microchip Technology	EEPROM	INDUSTRIAL	5	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	128 words	5	3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP5/6,.08	EEPROMs	200	.65 mm	85 Cel			128X8	128	-40 Cel	Matte Tin (Sn) - annealed	1010XXXR	DUAL	1	HARDWARE	R-PDSO-G5	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	.4 MHz	1.25 mm	Not Qualified	5 ms	I2C	1024 bit	2.5 V			e3	40	260	.000001 Amp	2 mm	5
AT24C04B-TSU-T	Microchip Technology	EEPROM	INDUSTRIAL	5	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	512 words	2.5	2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSOP5/6,.11,37	EEPROMs	100	.95 mm	85 Cel			512X8	512	-40 Cel		1010DDMR	DUAL		HARDWARE	R-PDSO-G5		5.5 V	1.1 mm	1000000 Write/Erase Cycles	.4 MHz	1.6 mm	Not Qualified	5 ms	I2C	4096 bit	1.8 V						.000003 Amp	2.9 mm
AT24C04C-STUM-T	Microchip Technology	EEPROM	INDUSTRIAL	5	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	512 words	5		8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSOP5/6,.11,37		100	.95 mm	85 Cel		OPEN-DRAIN	512X8	512	-40 Cel	MATTE TIN	1010DDMR	DUAL	1	HARDWARE	R-PDSO-G5	1	5.5 V	1 mm	1000000 Write/Erase Cycles	1 MHz	1.6 mm		5 ms	I2C	4096 bit	1.7 V			e3	40	260	.000006 Amp	2.9 mm	5
AT24C32E-STUM-T	Microchip Technology	EEPROM	INDUSTRIAL	5	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	1 mA	4096 words	3		8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSOP5/6,.11,37		100	.95 mm	85 Cel		OPEN-DRAIN	4KX8	4K	-40 Cel	MATTE TIN	1010000R	DUAL	1		R-PDSO-G5	1	3.6 V	1 mm	1000000 Write/Erase Cycles	1 MHz	1.6 mm		5 ms	I2C	32768 bit	2.5 V	1.7V TO 3.6V @ 0.1MHz AND 1.7V TO 3.6V @ 0.4MHz		e3	40	260	.0000008 Amp	2.9 mm	3
24AA02HT-I/OT	Microchip Technology	EEPROM	INDUSTRIAL	5	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words	2.5	2/5	8	SMALL OUTLINE	TSOP5/6,.11,37	EEPROMs	200	.95 mm	85 Cel		OPEN-DRAIN	256X8	256	-40 Cel	Matte Tin (Sn) - annealed	1010XXXR	DUAL	1	HARDWARE	R-PDSO-G5	1	3.6 V	1.45 mm	1000000 Write/Erase Cycles	.1 MHz	1.55 mm	Not Qualified	5 ms	I2C	2048 bit	1.7 V			e3	40	260	.000001 Amp	2.9 mm	2.5
24LC04B-I/SNG	Microchip Technology	EEPROM	INDUSTRIAL	5	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	3 mA	512 words	5	3/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	200	1.27 mm	85 Cel		OPEN-DRAIN	512X8	512	-40 Cel	Matte Tin (Sn)	1010XXMR	DUAL	1	HARDWARE	R-PDSO-G8	3	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	4096 bit	2.5 V			e3	40	260	.000001 Amp	4.9 mm	5
24LC04BT-I/SNG	Microchip Technology	EEPROM	INDUSTRIAL	5	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	512 words	5	3/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	200	1.27 mm	85 Cel	NO		512X8	512	-40 Cel	Matte Tin (Sn)	1010XXMR	DUAL		HARDWARE	R-PDSO-G8	3	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	4096 bit	2.5 V			e3	40	260	.000005 Amp	4.9 mm
AT24C04D-STUM-T	Microchip Technology	EEPROM	INDUSTRIAL	5	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	1 mA	512 words	3	1.8/3.3	8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSOP5/6,.11,37	EEPROMs	100	.95 mm	85 Cel		OPEN-DRAIN	512X8	512	-40 Cel	MATTE TIN	101000MR	DUAL	1	HARDWARE	R-PDSO-G8		3.6 V	1 mm	1000000 Write/Erase Cycles	1 MHz	1.6 mm	Not Qualified	5 ms	I2C	4096 bit	2.5 V	1.7V TO 3.6V @ 0.1MHz AND 1.7V TO 3.6V @ 0.4MHz	16	e3			.0000008 Amp	2.9 mm	3	YES

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.