5 EEPROM 629

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	I2C Control Byte	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
24AA025E64T-E/OT	Microchip Technology	EEPROM	AUTOMOTIVE	5	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words		5	1.8/5	8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP5/6,.11,37		EEPROMs	200	.95 mm	125 Cel		OPEN-DRAIN	256X8	256	-40 Cel	MATTE TIN	1010DDDR	DUAL	1		R-PDSO-G5	1	5.5 V	1.45 mm	1000000 Write/Erase Cycles	.4 MHz	1.55 mm	Not Qualified	5 ms	I2C	2048 bit	2.5 V	1.7V TO 2.5V @ 0.1MHz		e3	40	260	.000005 Amp	2.9 mm		5
CAT24C04TDI-GT3	Onsemi	EEPROM	INDUSTRIAL	5	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	4096 words		3.3	2/5	1	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSOP5/6,.11,37		EEPROMs	100	.95 mm	85 Cel			4KX1	4K	-40 Cel	NICKEL PALLADIUM GOLD	1010000R	DUAL		HARDWARE	R-PDSO-G5	1	5.5 V	1 mm	1000000 Write/Erase Cycles	.4 MHz	1.6 mm	Not Qualified	5 ms	I2C	4096 bit	1.7 V			e4	30	260	.000001 Amp	2.9 mm
24LC08BHT-E/OT	Microchip Technology	EEPROM	AUTOMOTIVE	5	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	1024 words		5	3/5	8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP5/6,.11,37		EEPROMs	200	.95 mm	125 Cel		OPEN-DRAIN	1KX8	1K	-40 Cel	Matte Tin (Sn) - annealed	1010XMMR	DUAL	1	HARDWARE	R-PDSO-G5	1	5.5 V	1.45 mm	1000000 Write/Erase Cycles	.4 MHz	1.55 mm	Not Qualified	5 ms	I2C	8192 bit	2.5 V			e3	40	260	.000005 Amp	2.9 mm		5
24CS512T-I/OT	Microchip Technology	EEPROM	INDUSTRIAL	5	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	65536 words				8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP5/6,.11,37			200	.95 mm	85 Cel		OPEN-DRAIN	64KX8	64K	-40 Cel	Matte Tin (Sn)	1010DDDR	DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G5		5.5 V	1.45 mm	1000000 Write/Erase Cycles	3.4 MHz	1.63 mm		5 ms	I2C	524288 bit	2.5 V			e3			.000003 Amp	2.95 mm
24LC04BT-E/SNG	Microchip Technology	EEPROM	AUTOMOTIVE	5	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	3 mA	512 words		5	3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	200	1.27 mm	125 Cel		OPEN-DRAIN	512X8	512	-40 Cel	Matte Tin (Sn)	1010XXMR	DUAL	1	HARDWARE	R-PDSO-G8	3	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	4096 bit	2.5 V			e3	40	260	.000005 Amp	4.9 mm		5
AT24CS08-STUM-T	Microchip Technology	EEPROM	INDUSTRIAL	5	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	1024 words		5	1.8/5	8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSOP5/6,.11,37		EEPROMs	100	.95 mm	85 Cel		OPEN-DRAIN	1KX8	1K	-40 Cel	MATTE TIN	1010DDDR	DUAL	1	HARDWARE	R-PDSO-G5		5.5 V	1 mm	1000000 Write/Erase Cycles	1 MHz	1.6 mm	Not Qualified	5 ms	I2C	8192 bit	2.5 V	1.7V TO 2.5V @ 0.4MHz		e3			.000006 Amp	2.9 mm		5
24LC04B-I/SNRVC	Microchip Technology	EEPROM	INDUSTRIAL	5	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	512 words		5		8	SMALL OUTLINE	SOP8,.25			200	1.27 mm	85 Cel	NO		512X8	512	-40 Cel	MATTE TIN		DUAL		HARDWARE	R-PDSO-G8		5.5 V	1.75 mm		.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	4096 bit	2.5 V			e3			.000005 Amp	4.9 mm
24LC32AT-E/OT16KVAO	Microchip Technology	EEPROM	AUTOMOTIVE	5	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	3 mA	4096 words		5		8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH					.95 mm	125 Cel			4KX8	4K	-40 Cel			DUAL			R-PDSO-G5		5.5 V	1.45 mm		.4 MHz	1.55 mm		5 ms	I2C	32768 bit	2.5 V							2.9 mm
CAT24AA04TDI-GT3	Onsemi	EEPROM	INDUSTRIAL	5	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	1 mA	512 words		1.8	1.8/5	8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSOP5/6,.11,37		EEPROMs	100	.95 mm	85 Cel			512X8	512	-40 Cel	NICKEL PALLADIUM GOLD	101000MR	DUAL		HARDWARE	R-PDSO-G5	1	5.5 V	1 mm	1000000 Write/Erase Cycles	.4 MHz	1.6 mm	Not Qualified	5 ms	I2C	4096 bit	1.7 V			e4	30	260	.000001 Amp	2.9 mm
M24C16-FMH6TG	STMicroelectronics	EEPROM	INDUSTRIAL	5	VBCC	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	1 mA	2048 words		1.8		8	CHIP CARRIER, VERY THIN PROFILE	SOLCC5,.06,16			200	.4 mm	85 Cel		OPEN-DRAIN	2KX8	2K	-40 Cel		1010DDDR	BOTTOM			R-XBCC-N5		5.5 V	.6 mm	4000000 Write/Erase Cycles	.4 MHz	1.4 mm		5 ms	I2C	16384 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED	.000001 Amp	1.7 mm		1.8
M24C64-FCS6TP/K	STMicroelectronics	EEPROM	INDUSTRIAL	5	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	3 mA	8192 words			1.8/5	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA5,3X3,14/8		EEPROMs	40	.2 mm	85 Cel			8KX8	8K	-40 Cel		1010DDDR	BOTTOM		HARDWARE	R-PBGA-B5		5.5 V	.6 mm	1000000 Write/Erase Cycles	1 MHz	.959 mm	Not Qualified		I2C	65536 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED	.000001 Amp	1.073 mm
24AA00T-I/OT	Microchip Technology	EEPROM	INDUSTRIAL	5	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	2 mA	16 words		5	2/5	8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP5/6,.11,37		EEPROMs	200	.95 mm	85 Cel		OPEN-DRAIN	16X8	16	-40 Cel	MATTE TIN	1010XXXR	DUAL	1		R-PDSO-G5	1	5.5 V	1.45 mm	1000000 Write/Erase Cycles	.4 MHz	1.5 mm	Not Qualified	4 ms	I2C	128 bit	4.5 V			e3		260	.000001 Amp	2.9 mm		5
24AA01HT-I/LT	Microchip Technology	EEPROM	INDUSTRIAL	5	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	128 words		2.5	2/5	8	SMALL OUTLINE	TSSOP5/6,.08		EEPROMs	200	.65 mm	85 Cel		OPEN-DRAIN	128X8	128	-40 Cel	Matte Tin (Sn) - annealed	1010XXXR	DUAL	1	HARDWARE	R-PDSO-G5	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	.1 MHz	1.25 mm	Not Qualified	5 ms	I2C	1024 bit	1.7 V			e3	40	260	.000001 Amp	2 mm		2.5
24LC08BT-E/OT16KVAO	Microchip Technology	EEPROM	AUTOMOTIVE	5	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	GULL WING	SERIAL	SYNCHRONOUS	3 mA	1024 words		5		8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP5/6,.11,37			200	.95 mm	125 Cel		OPEN-DRAIN	1KX8	1K	-40 Cel		1010XMMR	DUAL	1	HARDWARE	R-PDSO-G5		5.5 V	1.45 mm	1000000 Write/Erase Cycles	.4 MHz	1.55 mm		5 ms	I2C	8192 bit	2.5 V				30	260	.000005 Amp	2.9 mm		5
93LC66BT-I/OT15KVAO	Microchip Technology	EEPROM	INDUSTRIAL	5	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	5 mA	256 words		5		16	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP5/6,.11,37			200	.95 mm	85 Cel			256X16	256	-40 Cel			DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G5		5.5 V	1.45 mm	1000000 Write/Erase Cycles	2 MHz	1.55 mm		6 ms	MICROWIRE	4096 bit	2.5 V	1.8V TO 2.5V @ 1MHz					.000001 Amp	2.9 mm		5
24FC16T-I/OT	Microchip Technology	EEPROM	INDUSTRIAL	5	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	2048 words		2.5		8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP5/6,.11,37			200	.95 mm	85 Cel			2KX8	2K	-40 Cel		1010MMMR	DUAL	1	HARDWARE	R-PDSO-G5		5.5 V	1.45 mm	1000000 Write/Erase Cycles	1 MHz	1.63 mm		5 ms	I2C	16384 bit	1.7 V						.000001 Amp	2.95 mm		2.5
AT24C08D-STUM-T	Microchip Technology	EEPROM	INDUSTRIAL	5	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	1 mA	1024 words		3		8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSOP5/6,.11,37			100	.95 mm	85 Cel		OPEN-DRAIN	1KX8	1K	-40 Cel	MATTE TIN	1010000R	DUAL	1	HARDWARE	R-PDSO-G5		3.6 V	1 mm	1000000 Write/Erase Cycles	1 MHz	1.6 mm		5 ms	I2C	8192 bit	2.5 V	1.7V TO 3.6V @ 0.1MHz AND 1.7V TO 3.6V @ 0.4MHz		e3			.0000008 Amp	2.9 mm		3
AT24CS04-STUM-T	Microchip Technology	EEPROM	INDUSTRIAL	5	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	512 words		2.7	1.8/5	8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSOP5/6,.11,37	1	EEPROMs	100	.95 mm	85 Cel	NO	OPEN-DRAIN	512X8	512	-40 Cel	MATTE TIN	1010000R	DUAL	1	HARDWARE	R-PDSO-G5		5 V	1 mm	1000000 Write/Erase Cycles	1 MHz	1.6 mm	Not Qualified	5 ms	I2C	4096 bit	2.5 V	ALSO OPERATES AT 0.4MHZ AT 1.7MIN SUPPLY		e3			.000001 Amp	2.9 mm		2.7
24FC01T-E/OT	Microchip Technology	EEPROM	AUTOMOTIVE	5	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	128 words		2.5		8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP5/6,.11,37			200	.95 mm	125 Cel			128X8	128	-40 Cel		1010XXXR	DUAL	1	HARDWARE	R-PDSO-G5		5.5 V	1.45 mm	1000000 Write/Erase Cycles	1 MHz	1.63 mm		5 ms	I2C	1024 bit	1.7 V						.000003 Amp	2.95 mm		2.5
24LC02BHT-I/LT	Microchip Technology	EEPROM	INDUSTRIAL	5	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words		4.5	3/5	8	SMALL OUTLINE	TSSOP5/6,.08		EEPROMs	200	.65 mm	85 Cel		OPEN-DRAIN	256X8	256	-40 Cel	Matte Tin (Sn) - annealed	1010XXXR	DUAL	1	HARDWARE	R-PDSO-G5	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	.4 MHz	1.25 mm	Not Qualified	5 ms	I2C	2048 bit	2.5 V			e3	40	260	.000001 Amp	2 mm		4.5
AT24C01B-TSU-T	Microchip Technology	EEPROM	INDUSTRIAL	5	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		128 words		5		8	SMALL OUTLINE, THIN PROFILE					.95 mm	85 Cel			128X8	128	-40 Cel			DUAL			R-PDSO-G5		5.5 V	1.1 mm		1 MHz	1.6 mm		5 ms	I2C	1024 bit	1.8 V				NOT SPECIFIED	NOT SPECIFIED		2.9 mm
24LC01BT-E/LT	Microchip Technology	EEPROM	AUTOMOTIVE	5	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	128 words		5	3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP5/6,.08		EEPROMs	200	.65 mm	125 Cel			128X8	128	-40 Cel	Matte Tin (Sn)	1010XXXR	DUAL	1	HARDWARE	R-PDSO-G5	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	.4 MHz	1.25 mm	Not Qualified	5 ms	I2C	1024 bit	2.5 V			e3		260	.000005 Amp	2 mm		5
24AA01HT-I/OT	Microchip Technology	EEPROM	INDUSTRIAL	5	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	128 words		2.5	2/5	8	SMALL OUTLINE	TSOP5/6,.11,37		EEPROMs	200	.95 mm	85 Cel		OPEN-DRAIN	128X8	128	-40 Cel	Matte Tin (Sn) - annealed	1010XXXR	DUAL	1	HARDWARE	R-PDSO-G5	1	5.5 V	1.45 mm	1000000 Write/Erase Cycles	.1 MHz	1.55 mm	Not Qualified	5 ms	I2C	1024 bit	1.7 V			e3	40	260	.000001 Amp	2.9 mm		2.5
24C00T-I/OT	Microchip Technology	EEPROM	INDUSTRIAL	5	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	2 mA	16 words		5	2/5	8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP5/6,.11,37		EEPROMs	200	.95 mm	85 Cel		OPEN-DRAIN	16X8	16	-40 Cel	MATTE TIN	1010XXXR	DUAL	1		R-PDSO-G5	1	5.5 V	1.45 mm	1000000 Write/Erase Cycles	.4 MHz	1.5 mm	Not Qualified	4 ms	I2C	128 bit	4.5 V			e3		260	.000001 Amp	2.9 mm		5
24FC02T-E/OT	Microchip Technology	EEPROM	AUTOMOTIVE	5	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words		2.5		8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP5/6,.11,37			200	.95 mm	125 Cel		OPEN-DRAIN	256X8	256	-40 Cel	Matte Tin (Sn)	1010XXXR	DUAL	1	HARDWARE	R-PDSO-G5		5.5 V	1.45 mm	1000000 Write/Erase Cycles	1 MHz	1.63 mm		5 ms	I2C	2048 bit	1.7 V			e3			.000003 Amp	2.95 mm		2.5
24FC02T-I/OT	Microchip Technology	EEPROM	INDUSTRIAL	5	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words		2.5		8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP5/6,.11,37			200	.95 mm	85 Cel		OPEN-DRAIN	256X8	256	-40 Cel	Matte Tin (Sn)	1010XXXR	DUAL	1	HARDWARE	R-PDSO-G5		5.5 V	1.45 mm	1000000 Write/Erase Cycles	1 MHz	1.63 mm		5 ms	I2C	2048 bit	1.7 V			e3			.000001 Amp	2.95 mm		2.5
24FC08T-I/OT	Microchip Technology	EEPROM	INDUSTRIAL	5	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	1024 words		2.5		8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP5/6,.11,37			200	.95 mm	85 Cel		OPEN-DRAIN	1KX8	1K	-40 Cel	Matte Tin (Sn)	1010XMMR	DUAL	1	HARDWARE	R-PDSO-G5		5.5 V	1.45 mm	1000000 Write/Erase Cycles	1 MHz	1.63 mm		5 ms	I2C	8192 bit	1.7 V			e3			.000001 Amp	2.95 mm		2.5
24LC04BHT-I/OT	Microchip Technology	EEPROM	INDUSTRIAL	5	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	512 words		5	3/5	8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP5/6,.11,37		EEPROMs	200	.95 mm	85 Cel		OPEN-DRAIN	512X8	512	-40 Cel	Matte Tin (Sn) - annealed	1010XXMR	DUAL	1	HARDWARE	R-PDSO-G5	1	5.5 V	1.45 mm	1000000 Write/Erase Cycles	.4 MHz	1.63 mm	Not Qualified	5 ms	I2C	4096 bit	2.5 V		16	e3	40	260	.000005 Amp	2.95 mm		5	YES
DS25LV02R+U	Analog Devices	EEPROM	OTHER	5	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	ASYNCHRONOUS		128 words	COMMON	2.5	2.5/5	8	SMALL OUTLINE	TSOP5/6,.11,37		Other Memory ICs		.95 mm	85 Cel			128X8	128	-30 Cel	Matte Tin (Sn) - annealed		DUAL			R-PDSO-G5	1	5.5 V					Not Qualified		1-WIRE	1024 bit	2.2 V			e3					15000 ns
NV24C16SNVLT3G	Onsemi	EEPROM	AUTOMOTIVE	5	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	.5 mA	2048 words		3.3		8	SMALL OUTLINE, THIN PROFILE	TSOP5/6,.11,37			100	.95 mm	125 Cel			2KX8	2K	-40 Cel		1010XXXR	DUAL	1	HARDWARE	R-PDSO-G5	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	1 MHz	1.5 mm		4 ms	I2C	16384 bit	1.7 V				NOT SPECIFIED	260	.000002 Amp	3 mm
NV24C04SNVLT3G	Onsemi	EEPROM	AUTOMOTIVE	5	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	.5 mA	512 words		3.3		8	SMALL OUTLINE, THIN PROFILE	TSOP5/6,.11,37			100	.95 mm	125 Cel			512X8	512	-40 Cel		1010XXXR	DUAL	1	HARDWARE	R-PDSO-G5		5.5 V	1.1 mm	1000000 Write/Erase Cycles	1 MHz	1.5 mm		4 ms	I2C	4096 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED	.000002 Amp	3 mm
NV24C08SNVLT3G	Onsemi	EEPROM	AUTOMOTIVE	5	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	.5 mA	1024 words		3.3		8	SMALL OUTLINE, THIN PROFILE	TSOP5/6,.11,37			100	.95 mm	125 Cel			1KX8	1K	-40 Cel		1010XXXR	DUAL	1	HARDWARE	R-PDSO-G5	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	1 MHz	1.5 mm		4 ms	I2C	8192 bit	1.7 V				NOT SPECIFIED	260	.000002 Amp	3 mm
NV24C02SNVLT3G	Onsemi	EEPROM	AUTOMOTIVE	5	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	.5 mA	2048 words		3.3		1	SMALL OUTLINE, THIN PROFILE	TSOP5/6,.11,37			100	.95 mm	125 Cel			2KX1	2K	-40 Cel		1010XXXR	DUAL		HARDWARE	R-PDSO-G5		5.5 V	1.1 mm	1000000 Write/Erase Cycles	1 MHz	1.5 mm		4 ms	I2C	2048 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED	.000002 Amp	3 mm
CAT24AA02TDI-GT10	Onsemi	EEPROM	INDUSTRIAL	5	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	1 mA	256 words			2/5	8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSOP5/6,.11,37		EEPROMs	100	.95 mm	85 Cel			256X8	256	-40 Cel		1010000R	DUAL		HARDWARE	R-PDSO-G5		5.5 V	1 mm	1000000 Write/Erase Cycles	.4 MHz	1.6 mm	Not Qualified	5 ms	I2C	2048 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED	.000001 Amp	2.9 mm
CAT24AA08TDI-T10	Onsemi	EEPROM	INDUSTRIAL	5	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	1 mA	1024 words		1.8	1.8/5	8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSOP5/6,.11,37		EEPROMs	100	.95 mm	85 Cel			1KX8	1K	-40 Cel		10100MMR	DUAL		HARDWARE	R-PDSO-G5		5.5 V	1 mm	1000000 Write/Erase Cycles	.4 MHz	1.6 mm	Not Qualified	5 ms	I2C	8192 bit	1.7 V			e3	NOT SPECIFIED	NOT SPECIFIED	.000001 Amp	2.9 mm
CAT24C04TDE-G	Onsemi	EEPROM	AUTOMOTIVE	5	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	4096 words		3.3	2/5	1	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSOP5/6,.11,37		EEPROMs	100	.95 mm	125 Cel			4KX1	4K	-40 Cel	MATTE TIN	101000MR	DUAL		HARDWARE	R-PDSO-G5	1	5.5 V	1 mm	1000000 Write/Erase Cycles	.4 MHz	1.6 mm	Not Qualified	5 ms	I2C	4096 bit	1.8 V			e3			.000002 Amp	2.9 mm
CAT24C03TDI-G	Onsemi	EEPROM	INDUSTRIAL	5	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		1 mA	256 words			2/5	8	SMALL OUTLINE, THIN PROFILE	TSOP5/6,.11,37		EEPROMs	100	.95 mm	85 Cel			256X8	256	-40 Cel		1010000R	DUAL		HARDWARE	R-PDSO-G5				1000000 Write/Erase Cycles			Not Qualified		I2C	2048 bit							.000001 Amp
CAT24C32TSE-T3	Onsemi	EEPROM	AUTOMOTIVE	5	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		4096 words		5		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				100	.95 mm	125 Cel			4KX8	4K	-40 Cel	MATTE TIN		DUAL			R-PDSO-G5		5.5 V	1.1 mm		1 MHz	1.5 mm	Not Qualified	5 ms	I2C	32768 bit	1.8 V	100 YEAR DATA RETENTION		e3				3 mm
CAT24AA02TDI	Onsemi	EEPROM	INDUSTRIAL	5	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	1 mA	256 words			2/5	8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSOP5/6,.11,37		EEPROMs	100	.95 mm	85 Cel			256X8	256	-40 Cel		1010000R	DUAL		HARDWARE	R-PDSO-G5		5.5 V	1 mm	1000000 Write/Erase Cycles	.4 MHz	1.6 mm	Not Qualified	5 ms	I2C	2048 bit	1.7 V	IT ALSO OPERATES AT 0.1MHZ					.000001 Amp	2.9 mm
CAT24C00GTBE	Onsemi	EEPROM	AUTOMOTIVE	5	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		2 mA	16 words			2/5	8	SMALL OUTLINE, THIN PROFILE	TSOP5/6,.11,37		EEPROMs	100	.95 mm	125 Cel			16X8	16	-40 Cel		1010XXXR	DUAL			R-PDSO-G5				10000000 Write/Erase Cycles			Not Qualified		I2C								.00001 Amp
CAT24C08HU4I-T3	Onsemi	EEPROM	AUTOMOTIVE	5	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		64 words		5		16	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH					.95 mm	125 Cel			64X16	64	-40 Cel	NICKEL PALLADIUM GOLD		DUAL			R-PDSO-G5		5.5 V	1 mm		.4 MHz	1.6 mm		5 ms	I2C	1024 bit	1.8 V			e4				2.9 mm
CAT24C02TSI-T3	Onsemi	EEPROM	INDUSTRIAL	5	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	128 words		5	1.8/5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSOP5/6,.11,37		EEPROMs	100	.95 mm	85 Cel			128X16	128	-40 Cel		1010000R	DUAL		HARDWARE	R-PDSO-G5		5.5 V	1.1 mm	1000000 Write/Erase Cycles	.4 MHz	1.5 mm	Not Qualified	5 ms	I2C	2048 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED	.000003 Amp	3 mm
CAT24AA02TDI-T10	Onsemi	EEPROM	INDUSTRIAL	5	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	1 mA	256 words			2/5	8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSOP5/6,.11,37		EEPROMs	100	.95 mm	85 Cel			256X8	256	-40 Cel		1010000R	DUAL		HARDWARE	R-PDSO-G5		5.5 V	1 mm	1000000 Write/Erase Cycles	.4 MHz	1.6 mm	Not Qualified	5 ms	I2C	2048 bit	1.7 V			e3	NOT SPECIFIED	NOT SPECIFIED	.000001 Amp	2.9 mm
CAT24C01TDI-GT3	Onsemi	EEPROM	INDUSTRIAL	5	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	128 words		3.3	2/5	8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSOP5/6,.11,37		EEPROMs	100	.95 mm	85 Cel			128X8	128	-40 Cel	NICKEL PALLADIUM GOLD	1010000R	DUAL		HARDWARE	R-PDSO-G5	1	5.5 V	1 mm	1000000 Write/Erase Cycles	.4 MHz	1.6 mm	Not Qualified	5 ms	I2C	1024 bit	1.7 V			e4		260	.000001 Amp	2.9 mm
CAT24C04TDE	Onsemi	EEPROM	AUTOMOTIVE	5	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	4096 words		3.3	2/5	1	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSOP5/6,.11,37		EEPROMs	100	.95 mm	125 Cel			4KX1	4K	-40 Cel	MATTE TIN	101000MR	DUAL		HARDWARE	R-PDSO-G5	1	5.5 V	1 mm	1000000 Write/Erase Cycles	.4 MHz	1.6 mm	Not Qualified	5 ms	I2C	4096 bit	1.8 V			e3			.000002 Amp	2.9 mm
CAT24C04TDE-GT3	Onsemi	EEPROM	AUTOMOTIVE	5	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	512 words		3.3	2/5	8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSOP5/6,.11,37		EEPROMs	100	.95 mm	125 Cel			512X8	512	-40 Cel	NICKEL PALLADIUM GOLD	101000MR	DUAL		HARDWARE	R-PDSO-G5	1	5.5 V	1 mm	1000000 Write/Erase Cycles	.4 MHz	1.6 mm	Not Qualified	5 ms	I2C	4096 bit	1.8 V			e4	30	260	.000002 Amp	2.9 mm
CAT24C16C5AE-GT3	Onsemi	EEPROM	INDUSTRIAL	5	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		128 words		5		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.3 mm	85 Cel			128X16	128	-40 Cel	NICKEL PALLADIUM GOLD		BOTTOM			R-PBGA-B5		5.5 V	.35 mm		.4 MHz	.832 mm		5 ms	I2C	2048 bit	1.7 V			e4				.856 mm
CAT24C01TDI	Onsemi	EEPROM	INDUSTRIAL	5	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	1 mA	1024 words		3.3	2/5	1	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSOP5/6,.11,37		EEPROMs	100	.95 mm	85 Cel			1KX1	1K	-40 Cel	MATTE TIN	1010000R	DUAL		HARDWARE	R-PDSO-G5	1	5.5 V	1 mm	1000000 Write/Erase Cycles	.4 MHz	1.6 mm	Not Qualified	5 ms	I2C	1024 bit	1.7 V			e3			.000001 Amp	2.9 mm

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.