5 EEPROM 629

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	I2C Control Byte	Terminal Position	Write Protection	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)
M24C32-DFMH5TP	STMicroelectronics	EEPROM	OTHER	5	VSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	5 mA	4096 words	2.5		8	SMALL OUTLINE, VERY THIN PROFILE				.4 mm	85 Cel		4KX8	4K	-20 Cel		DUAL		R-PDSO-N5	5.5 V	.6 mm		1 MHz	1.4 mm		5 ms	I2C	32768 bit	1.7 V					1.7 mm
M24C64-RCS6TG/TF	STMicroelectronics	EEPROM	INDUSTRIAL	5	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	2.5 mA	8192 words			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm	85 Cel		8KX8	8K	-40 Cel		BOTTOM		R-PBGA-B5	5.5 V	.645 mm		1 MHz	.959 mm		5 ms	I2C	65536 bit	1.8 V		NOT SPECIFIED	NOT SPECIFIED		1.073 mm
M24C08-WCT6P	STMicroelectronics	EEPROM	INDUSTRIAL	5	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		1024 words			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.346 mm	85 Cel		1KX8	1K	-40 Cel		BOTTOM		R-PBGA-B5	5.5 V	.33 mm		.4 MHz	1.025 mm		5 ms	I2C	8192 bit	2.5 V					1.215 mm
M24C08-RMH6TG	STMicroelectronics	EEPROM	INDUSTRIAL	5	VSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		1024 words			8	SMALL OUTLINE, VERY THIN PROFILE				.4 mm	85 Cel		1KX8	1K	-40 Cel		DUAL		R-PDSO-N5	5.5 V	.6 mm		.4 MHz	1.4 mm		5 ms	I2C	8192 bit	1.8 V					1.7 mm
M24C64-FCS6TG/TF	STMicroelectronics	EEPROM	INDUSTRIAL	5	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	2.5 mA	8192 words			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm	85 Cel		8KX8	8K	-40 Cel		BOTTOM		R-PBGA-B5	5.5 V	.645 mm		.4 MHz	.959 mm		5 ms	I2C	65536 bit	1.6 V	IT ALSO OPERATES AT 0 TO 85 TEMP AT WRITE OPERATION	NOT SPECIFIED	NOT SPECIFIED		1.073 mm
M24C32-WMH6TP/K	STMicroelectronics	EEPROM	INDUSTRIAL	5	BCC	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	BUTT	SERIAL	SYNCHRONOUS	3 mA	4096 words	5		8	CHIP CARRIER				.4 mm	85 Cel		4KX8	4K	-40 Cel		BOTTOM		R-XBCC-B5	5.5 V	.6 mm		1 MHz	1.4 mm		5 ms	I2C	32768 bit	2.5 V					1.7 mm
M24C64-WCS6TP/12	STMicroelectronics	EEPROM	INDUSTRIAL	5	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		8192 words			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					85 Cel		8KX8	8K	-40 Cel		BOTTOM		R-PBGA-B5	5.5 V	.645 mm		1 MHz	.959 mm		5 ms	I2C	65536 bit	2.5 V					1.073 mm
M24128-BWMH6G	STMicroelectronics	EEPROM	INDUSTRIAL	5	VBCC	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	BUTT	SERIAL	SYNCHRONOUS	2.5 mA	16384 words		3/5	8	CHIP CARRIER, VERY THIN PROFILE	SOLCC5,.06,16	EEPROMs	200		85 Cel		16KX8	16K	-40 Cel	1010DDDR	BOTTOM	HARDWARE	R-XBCC-B5	5.5 V	.6 mm	4000000 Write/Erase Cycles	1 MHz	1.4 mm	Not Qualified	5 ms	I2C	131072 bit	2.5 V		NOT SPECIFIED	NOT SPECIFIED	.000002 Amp	1.7 mm
M24C08-FMH6P	STMicroelectronics	EEPROM	INDUSTRIAL	5	VSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		1024 words			8	SMALL OUTLINE, VERY THIN PROFILE				.4 mm	85 Cel		1KX8	1K	-40 Cel		DUAL		R-PDSO-N5	5.5 V	.6 mm		.4 MHz	1.4 mm		5 ms	I2C	8192 bit	1.7 V					1.7 mm
M24C16-WMH5TP	STMicroelectronics	EEPROM	OTHER	5	VBCC	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	1 mA	2048 words			8	CHIP CARRIER, VERY THIN PROFILE	SOLCC5,.06,16		200	.4 mm	85 Cel	OPEN-DRAIN	2KX8	2K	-20 Cel	1010DDDR	BOTTOM		R-XBCC-N5	5.5 V	.6 mm	4000000 Write/Erase Cycles	.4 MHz	1.4 mm		5 ms	I2C	16384 bit	2.5 V				.000002 Amp	1.7 mm
M24C08-WCS6TP	STMicroelectronics	EEPROM	INDUSTRIAL	5	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		1024 words	5		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm	85 Cel		1KX8	1K	-40 Cel		BOTTOM		R-PBGA-B5	5.5 V	.595 mm		.4 MHz	1.025 mm	Not Qualified	5 ms	I2C	8192 bit	2.5 V		NOT SPECIFIED	NOT SPECIFIED		1.215 mm
M24C16-WMH6TP	STMicroelectronics	EEPROM	INDUSTRIAL	5	VBCC	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	1 mA	2048 words			8	CHIP CARRIER, VERY THIN PROFILE	SOLCC5,.06,16		200	.4 mm	85 Cel	OPEN-DRAIN	2KX8	2K	-40 Cel	1010DDDR	BOTTOM		R-XBCC-N5	5.5 V	.6 mm	4000000 Write/Erase Cycles	.4 MHz	1.4 mm		5 ms	I2C	16384 bit	2.5 V				.000002 Amp	1.7 mm
M24C64-FCS6G/TF	STMicroelectronics	EEPROM	INDUSTRIAL	5	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	2.5 mA	8192 words			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm	85 Cel		8KX8	8K	-40 Cel		BOTTOM		R-PBGA-B5	5.5 V	.645 mm		.4 MHz	.959 mm		5 ms	I2C	65536 bit	1.6 V	IT ALSO OPERATES AT 0 TO 85 TEMP AT WRITE OPERATION	NOT SPECIFIED	NOT SPECIFIED		1.073 mm
M24C04-WMH6TP	STMicroelectronics	EEPROM	INDUSTRIAL	5	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		512 words			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				.4 mm	85 Cel		512X8	512	-40 Cel		DUAL		R-PDSO-N5	5.5 V	.6 mm		.4 MHz	1.4 mm		5 ms	I2C	4096 bit	2.5 V		NOT SPECIFIED	NOT SPECIFIED		1.7 mm
M24128-BFMH6TP	STMicroelectronics	EEPROM	INDUSTRIAL	5	VBCC	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	BUTT	SERIAL	SYNCHRONOUS	2.5 mA	16384 words		1.8/5	8	CHIP CARRIER, VERY THIN PROFILE	SOLCC5,.06,16	EEPROMs	200	.4 mm	85 Cel		16KX8	16K	-40 Cel	1010DDDR	BOTTOM	HARDWARE	R-XBCC-B5	5.5 V	.6 mm	4000000 Write/Erase Cycles	1 MHz	1.4 mm	Not Qualified	5 ms	I2C	131072 bit	1.7 V		NOT SPECIFIED	NOT SPECIFIED	.000001 Amp	1.7 mm
M24C32-RMH6TG/T	STMicroelectronics	EEPROM	INDUSTRIAL	5	BCC	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	BUTT	SERIAL	SYNCHRONOUS	3 mA	4096 words	5		8	CHIP CARRIER				.4 mm	85 Cel		4KX8	4K	-40 Cel		BOTTOM		R-XBCC-B5	5.5 V	.6 mm		1 MHz	1.4 mm		5 ms	I2C	32768 bit	1.8 V					1.7 mm
M24C64-WCS6P/T	STMicroelectronics	EEPROM	INDUSTRIAL	5	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		8192 words			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					85 Cel		8KX8	8K	-40 Cel		BOTTOM		R-PBGA-B5	5.5 V	.645 mm		1 MHz	.959 mm		5 ms	I2C	65536 bit	2.5 V		NOT SPECIFIED	NOT SPECIFIED		1.073 mm
M24C01-RMH6TP	STMicroelectronics	EEPROM	INDUSTRIAL	5	VSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	.8 mA	128 words	2.5		8	SMALL OUTLINE, VERY THIN PROFILE	SOLCC5,.06,16		200	.4 mm	85 Cel	OPEN-DRAIN	128X8	128	-40 Cel	1010000R	DUAL	HARDWARE	R-PDSO-N5	5.5 V	.6 mm	4000000 Write/Erase Cycles	.4 MHz	1.4 mm		5 ms	I2C	1024 bit	1.8 V				.000001 Amp	1.7 mm
M24C16-RCS6P	STMicroelectronics	EEPROM	INDUSTRIAL	5	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		2048 words			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.346 mm	85 Cel		2KX8	2K	-40 Cel		BOTTOM		R-PBGA-B5	5.5 V	.6 mm		.4 MHz	1.21 mm		5 ms	I2C	16384 bit	1.8 V					1.255 mm
M24C16-FCS5TP/S	STMicroelectronics	EEPROM	OTHER	5	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		2048 words			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.346 mm	85 Cel		2KX8	2K	-20 Cel		BOTTOM		R-PBGA-B5	5.5 V	.6 mm		.4 MHz	1.21 mm		5 ms	I2C	16384 bit	1.7 V					1.255 mm
M24C64-RCS6G/12F	STMicroelectronics	EEPROM	INDUSTRIAL	5	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	2.5 mA	8192 words			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm	85 Cel		8KX8	8K	-40 Cel		BOTTOM		R-PBGA-B5	5.5 V	.645 mm		1 MHz	.959 mm		5 ms	I2C	65536 bit	1.8 V					1.073 mm
M24C32-XMH6G/K	STMicroelectronics	EEPROM	INDUSTRIAL	5	BCC	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	BUTT	SERIAL	SYNCHRONOUS	3 mA	4096 words	5		8	CHIP CARRIER				.4 mm	85 Cel		4KX8	4K	-40 Cel		BOTTOM		R-XBCC-B5	5.5 V	.6 mm		1 MHz	1.4 mm		5 ms	I2C	32768 bit	1.6 V					1.7 mm
M24C08-WCS6TG	STMicroelectronics	EEPROM	INDUSTRIAL	5	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		1024 words	5		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm	85 Cel		1KX8	1K	-40 Cel		BOTTOM		R-PBGA-B5	5.5 V	.595 mm		.4 MHz	1.025 mm	Not Qualified	5 ms	I2C	8192 bit	2.5 V		NOT SPECIFIED	NOT SPECIFIED		1.215 mm
M24C16-FMH5TG	STMicroelectronics	EEPROM	OTHER	5	VBCC	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	1 mA	2048 words	1.8		8	CHIP CARRIER, VERY THIN PROFILE	SOLCC5,.06,16		200	.4 mm	85 Cel	OPEN-DRAIN	2KX8	2K	-20 Cel	1010DDDR	BOTTOM		R-XBCC-N5	5.5 V	.6 mm	4000000 Write/Erase Cycles	.4 MHz	1.4 mm		5 ms	I2C	16384 bit	1.7 V				.000001 Amp	1.7 mm		1.8
M24C64-WCS6TG/TF	STMicroelectronics	EEPROM	INDUSTRIAL	5	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	2.5 mA	8192 words			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm	85 Cel		8KX8	8K	-40 Cel		BOTTOM		R-PBGA-B5	5.5 V	.645 mm		1 MHz	.959 mm		5 ms	I2C	65536 bit	2.5 V		NOT SPECIFIED	NOT SPECIFIED		1.073 mm
M24C64-FCS6TG/KF	STMicroelectronics	EEPROM	INDUSTRIAL	5	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	2.5 mA	8192 words	2.5		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					85 Cel		8KX8	8K	-40 Cel		BOTTOM		R-PBGA-B5	5.5 V	.645 mm		1 MHz	.959 mm		5 ms	I2C	65536 bit	1.7 V		NOT SPECIFIED	NOT SPECIFIED		1.073 mm
M24C64-RMH6TP	STMicroelectronics	EEPROM	INDUSTRIAL	5	VBCC	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	BUTT	SERIAL	SYNCHRONOUS		8192 words			8	CHIP CARRIER, VERY THIN PROFILE					85 Cel		8KX8	8K	-40 Cel		BOTTOM		R-XBCC-B5	5.5 V	.6 mm		1 MHz	1.4 mm		5 ms	I2C	65536 bit	1.8 V		NOT SPECIFIED	NOT SPECIFIED		1.7 mm
M24C01-WMH6TP	STMicroelectronics	EEPROM	INDUSTRIAL	5	VSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	1 mA	128 words			8	SMALL OUTLINE, VERY THIN PROFILE	SOLCC5,.06,16		200	.4 mm	85 Cel	OPEN-DRAIN	128X8	128	-40 Cel	1010000R	DUAL	HARDWARE	R-PDSO-N5	5.5 V	.6 mm	4000000 Write/Erase Cycles	.4 MHz	1.4 mm		5 ms	I2C	1024 bit	2.5 V				.000003 Amp	1.7 mm
M24C64-FCS6TG/12	STMicroelectronics	EEPROM	INDUSTRIAL	5	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		8192 words			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					85 Cel		8KX8	8K	-40 Cel		BOTTOM		R-PBGA-B5	5.5 V	.645 mm		1 MHz	.959 mm		5 ms	I2C	65536 bit	1.7 V					1.073 mm
M24C04-FMH5TP	STMicroelectronics	EEPROM	OTHER	5	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		512 words	2.5		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				.4 mm	85 Cel		512X8	512	-20 Cel		DUAL		R-PDSO-N5	5.5 V	.6 mm		.4 MHz	1.4 mm		5 ms	I2C	4096 bit	1.7 V		NOT SPECIFIED	NOT SPECIFIED		1.7 mm
M24C32-WMH6P	STMicroelectronics	EEPROM	INDUSTRIAL	5	BCC	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	BUTT	SERIAL	SYNCHRONOUS	5 mA	4096 words	5		8	CHIP CARRIER				.4 mm	85 Cel		4KX8	4K	-40 Cel		BOTTOM		R-XBCC-B5	5.5 V	.6 mm		1 MHz	1.4 mm		5 ms	I2C	32768 bit	2.5 V					1.7 mm
M24128-BWMH6P	STMicroelectronics	EEPROM	INDUSTRIAL	5	VBCC	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	BUTT	SERIAL	SYNCHRONOUS	2.5 mA	16384 words		3/5	8	CHIP CARRIER, VERY THIN PROFILE	SOLCC5,.06,16	EEPROMs	200	.4 mm	85 Cel		16KX8	16K	-40 Cel	1010DDDR	BOTTOM	HARDWARE	R-XBCC-B5	5.5 V	.6 mm	4000000 Write/Erase Cycles	1 MHz	1.4 mm	Not Qualified	5 ms	I2C	131072 bit	2.5 V		NOT SPECIFIED	NOT SPECIFIED	.000002 Amp	1.7 mm
M24C16-WCS6G	STMicroelectronics	EEPROM	INDUSTRIAL	5	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		2048 words			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.346 mm	85 Cel		2KX8	2K	-40 Cel		BOTTOM		R-PBGA-B5	5.5 V	.6 mm		.4 MHz	1.21 mm		5 ms	I2C	16384 bit	2.5 V					1.255 mm
M24C64-DFMH6PF	STMicroelectronics	EEPROM	INDUSTRIAL	5	VSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	2.5 mA	8192 words	2.5		8	SMALL OUTLINE, VERY THIN PROFILE				.4 mm	85 Cel		8KX8	8K	-40 Cel		DUAL		R-PDSO-N5	5.5 V	.6 mm		1 MHz	1.4 mm		5 ms	I2C	65536 bit	1.7 V		NOT SPECIFIED	NOT SPECIFIED		1.7 mm
M24C16-FCS6TG	STMicroelectronics	EEPROM	INDUSTRIAL	5	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		2048 words			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.346 mm	85 Cel		2KX8	2K	-40 Cel		BOTTOM		R-PBGA-B5	5.5 V	.6 mm		.4 MHz	1.21 mm		5 ms	I2C	16384 bit	1.7 V					1.255 mm
M24128-BRMH6TP	STMicroelectronics	EEPROM	INDUSTRIAL	5	VBCC	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	BUTT	SERIAL	SYNCHRONOUS	2.5 mA	16384 words		2/5	8	CHIP CARRIER, VERY THIN PROFILE	SOLCC5,.06,16	EEPROMs	200	.4 mm	85 Cel		16KX8	16K	-40 Cel	1010DDDR	BOTTOM	HARDWARE	R-XBCC-B5	5.5 V	.6 mm	4000000 Write/Erase Cycles	1 MHz	1.4 mm	Not Qualified	5 ms	I2C	131072 bit	1.8 V		NOT SPECIFIED	NOT SPECIFIED	.000001 Amp	1.7 mm
M24C64-WCS6G/TF	STMicroelectronics	EEPROM	INDUSTRIAL	5	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	2.5 mA	8192 words			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm	85 Cel		8KX8	8K	-40 Cel		BOTTOM		R-PBGA-B5	5.5 V	.645 mm		1 MHz	.959 mm		5 ms	I2C	65536 bit	2.5 V		NOT SPECIFIED	NOT SPECIFIED		1.073 mm
M24C64-RCS6TG/K	STMicroelectronics	EEPROM	INDUSTRIAL	5	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	3 mA	8192 words		2/5	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA5,3X3,14/8	EEPROMs	40	.2 mm	85 Cel		8KX8	8K	-40 Cel	1010DDDR	BOTTOM	HARDWARE	R-PBGA-B5	5.5 V	.6 mm	1000000 Write/Erase Cycles	1 MHz	.959 mm	Not Qualified		I2C	65536 bit	1.8 V		NOT SPECIFIED	NOT SPECIFIED	.000001 Amp	1.073 mm
M24C32-RMH6G/K	STMicroelectronics	EEPROM	INDUSTRIAL	5	BCC	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	BUTT	SERIAL	SYNCHRONOUS	3 mA	4096 words	5		8	CHIP CARRIER				.4 mm	85 Cel		4KX8	4K	-40 Cel		BOTTOM		R-XBCC-B5	5.5 V	.6 mm		1 MHz	1.4 mm		5 ms	I2C	32768 bit	1.8 V					1.7 mm
M24C32-FMH5TP	STMicroelectronics	EEPROM	OTHER	5	VSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	5 mA	4096 words	2.5		8	SMALL OUTLINE, VERY THIN PROFILE				.4 mm	85 Cel		4KX8	4K	-20 Cel		DUAL		R-PDSO-N5	5.5 V	.6 mm		1 MHz	1.4 mm		5 ms	I2C	32768 bit	1.7 V					1.7 mm
M24C64-DFCS6TP/P	STMicroelectronics	EEPROM	INDUSTRIAL	5	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	3 mA	8192 words		1.8/5	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA5,3X3,14/8	EEPROMs	40	.346 mm	85 Cel		8KX8	8K	-40 Cel	1010DDDR	BOTTOM	HARDWARE	R-PBGA-B5	5.5 V	.6 mm	1000000 Write/Erase Cycles	1 MHz	.959 mm	Not Qualified	5 ms	I2C	65536 bit	1.7 V		NOT SPECIFIED	NOT SPECIFIED	.000001 Amp	1.073 mm
M24C64-RCS6P/KF	STMicroelectronics	EEPROM	INDUSTRIAL	5	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	2.5 mA	8192 words			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm	85 Cel		8KX8	8K	-40 Cel		BOTTOM		R-PBGA-B5	5.5 V	.645 mm		1 MHz	.959 mm		5 ms	I2C	65536 bit	1.8 V		NOT SPECIFIED	NOT SPECIFIED		1.073 mm
M24C04-RMH6P	STMicroelectronics	EEPROM	INDUSTRIAL	5	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		512 words	2.5		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				.4 mm	85 Cel		512X8	512	-40 Cel		DUAL		R-PDSO-N5	5.5 V	.6 mm		.4 MHz	1.4 mm		5 ms	I2C	4096 bit	1.8 V		NOT SPECIFIED	NOT SPECIFIED		1.7 mm
M24C16-WCS6TG/S	STMicroelectronics	EEPROM	INDUSTRIAL	5	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		2048 words			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.346 mm	85 Cel		2KX8	2K	-40 Cel		BOTTOM		R-PBGA-B5	5.5 V	.6 mm		.4 MHz	1.21 mm		5 ms	I2C	16384 bit	2.5 V					1.255 mm
M24C08-WCT5TP	STMicroelectronics	EEPROM	OTHER	5	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		1024 words			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					85 Cel		1KX8	1K	-20 Cel		BOTTOM		R-PBGA-B5	5.5 V	.33 mm		.4 MHz	1.025 mm		5 ms	I2C	8192 bit	2.5 V	ALSO AVALIABLE IN 100 KHZ AND VOLATGE AND TEMPERATURE CAPTURED BASED ON ORDERING INFORMATION				1.215 mm
M24C64-FCS6TP/12	STMicroelectronics	EEPROM	INDUSTRIAL	5	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		8192 words			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					85 Cel		8KX8	8K	-40 Cel		BOTTOM		R-PBGA-B5	5.5 V	.645 mm		1 MHz	.959 mm		5 ms	I2C	65536 bit	1.7 V					1.073 mm
M24C16-FMH6P	STMicroelectronics	EEPROM	INDUSTRIAL	5	VBCC	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	1 mA	2048 words	1.8		8	CHIP CARRIER, VERY THIN PROFILE	SOLCC5,.06,16		200	.4 mm	85 Cel	OPEN-DRAIN	2KX8	2K	-40 Cel	1010DDDR	BOTTOM		R-XBCC-N5	5.5 V	.6 mm	4000000 Write/Erase Cycles	.4 MHz	1.4 mm		5 ms	I2C	16384 bit	1.7 V				.000001 Amp	1.7 mm		1.8
M24C08-RCS6G	STMicroelectronics	EEPROM	INDUSTRIAL	5	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	.8 mA	1024 words	2.5	2/5	8	GRID ARRAY	BGA5,3X3,14/8	EEPROMs	40	.4 mm	85 Cel		1KX8	1K	-40 Cel	1010DMMR	BOTTOM	HARDWARE	R-PBGA-B5	5.5 V	.595 mm	1000000 Write/Erase Cycles	.4 MHz	1.025 mm	Not Qualified	5 ms	I2C	8192 bit	1.8 V		NOT SPECIFIED	NOT SPECIFIED	.000001 Amp	1.215 mm	900 ns

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.