5 EEPROM 629

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	I2C Control Byte	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Programming Voltage (V)
CAT24AA01TDI-GT10	Onsemi	EEPROM	INDUSTRIAL	5	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	1 mA	128 words		2/5	8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSOP5/6,.11,37	EEPROMs	100	.95 mm	85 Cel	128X8	128	-40 Cel		1010000R	DUAL	HARDWARE	R-PDSO-G5		5.5 V	1 mm	1000000 Write/Erase Cycles	.4 MHz	1.6 mm	Not Qualified	5 ms	I2C	1024 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED	.000001 Amp	2.9 mm
CAT24C08LI	Onsemi	EEPROM	AUTOMOTIVE	5	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	2 mA	32 words	5	2/5	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	DIP8,.3	EEPROMs	100	.3 mm	125 Cel	32X16	32	-40 Cel	TIN	1010DMMR	BOTTOM	HARDWARE	R-PBGA-B5		5.5 V	.35 mm	1000000 Write/Erase Cycles	.4 MHz	.832 mm	Not Qualified	5 ms	I2C	512 bit	1.8 V		e3		260	.000001 Amp	.856 mm
CAT24AA01TDI-T3	Onsemi	EEPROM	INDUSTRIAL	5	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	1 mA	128 words		2/5	8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSOP5/6,.11,37	EEPROMs	100	.95 mm	85 Cel	128X8	128	-40 Cel		1010000R	DUAL	HARDWARE	R-PDSO-G5		5.5 V	1 mm	1000000 Write/Erase Cycles	.4 MHz	1.6 mm	Not Qualified	5 ms	I2C	1024 bit	1.7 V		e3	NOT SPECIFIED	NOT SPECIFIED	.000001 Amp	2.9 mm
CAT24AA01TDI	Onsemi	EEPROM	INDUSTRIAL	5	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		1 mA	128 words		2/5	8	SMALL OUTLINE, THIN PROFILE	TSOP5/6,.11,37	EEPROMs	100	.95 mm	85 Cel	128X8	128	-40 Cel		1010000R	DUAL	HARDWARE	R-PDSO-G5				1000000 Write/Erase Cycles			Not Qualified		I2C	1024 bit						.000001 Amp
CAT24C01TDE-G	Onsemi	EEPROM	AUTOMOTIVE	5	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	1024 words	3.3	2/5	1	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSOP5/6,.11,37	EEPROMs	100	.95 mm	125 Cel	1KX1	1K	-40 Cel	MATTE TIN	1010000R	DUAL	HARDWARE	R-PDSO-G5	1	5.5 V	1 mm	1000000 Write/Erase Cycles	.4 MHz	1.6 mm	Not Qualified	5 ms	I2C	1024 bit	1.8 V		e3			.000002 Amp	2.9 mm
CAT24C04HU4I-T3	Onsemi	EEPROM	AUTOMOTIVE	5	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		32 words	5		16	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH				.95 mm	125 Cel	32X16	32	-40 Cel	NICKEL PALLADIUM GOLD		DUAL		R-PDSO-G5		5.5 V	1 mm		.4 MHz	1.6 mm		5 ms	I2C	512 bit	1.8 V		e4				2.9 mm
CAT24AA08TDI-G	Onsemi	EEPROM	INDUSTRIAL	5	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		1 mA	1024 words		1.8/5	8	SMALL OUTLINE, THIN PROFILE	TSOP5/6,.11,37	EEPROMs	100	.95 mm	85 Cel	1KX8	1K	-40 Cel		10100MMR	DUAL	HARDWARE	R-PDSO-G5				1000000 Write/Erase Cycles			Not Qualified		I2C	8192 bit						.000001 Amp
CAT24C08TDI	Onsemi	EEPROM	INDUSTRIAL	5	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	8192 words	3.3	2/5	1	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSOP5/6,.11,37	EEPROMs	100	.95 mm	85 Cel	8KX1	8K	-40 Cel	MATTE TIN	10100MMR	DUAL	HARDWARE	R-PDSO-G5	1	5.5 V	1 mm	1000000 Write/Erase Cycles	.4 MHz	1.6 mm	Not Qualified	5 ms	I2C	8192 bit	1.7 V		e3			.000001 Amp	2.9 mm
CAV24C08C5ATR	Onsemi	EEPROM	AUTOMOTIVE	5	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		8192 words	3.6		1	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.3 mm	125 Cel	8KX1	8K	-40 Cel			BOTTOM		R-PBGA-B5		5.5 V	.39 mm		.4 MHz	.84 mm		5 ms	I2C	8192 bit	2.5 V	ALSO AVAILABLE 2.5-5.5V WITH 0.1MHZ					.86 mm
CAT24C02TDIT3	Onsemi	EEPROM	INDUSTRIAL	5	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	256 words	3.3	2/5	8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSOP5/6,.11,37	EEPROMs	100	.95 mm	85 Cel	256X8	256	-40 Cel	MATTE TIN	1010000R	DUAL	HARDWARE	R-PDSO-G5		5.5 V	1 mm	1000000 Write/Erase Cycles	.4 MHz	1.6 mm	Not Qualified	5 ms	I2C	2048 bit	1.8 V		e3			.000001 Amp	2.9 mm
CAT24C05TDI-GT3	Onsemi	EEPROM	INDUSTRIAL	5	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	1 mA	512 words	3.3	2/5	8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSOP5/6,.11,37	EEPROMs	100	.95 mm	85 Cel	512X8	512	-40 Cel	NICKEL PALLADIUM GOLD	101000MR	DUAL	HARDWARE	R-PDSO-G5	1	5.5 V	1 mm	1000000 Write/Erase Cycles	.4 MHz	1.6 mm	Not Qualified	5 ms	I2C	4096 bit	1.8 V		e4		260	.000001 Amp	2.9 mm
CAT24C05TDI-T3	Onsemi	EEPROM	INDUSTRIAL	5	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	1 mA	512 words	3.3	2/5	8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSOP5/6,.11,37	EEPROMs	100	.95 mm	85 Cel	512X8	512	-40 Cel		101000MR	DUAL	HARDWARE	R-PDSO-G5		5.5 V	1 mm	1000000 Write/Erase Cycles	.4 MHz	1.6 mm	Not Qualified	5 ms	I2C	4096 bit	1.8 V		e3	NOT SPECIFIED	NOT SPECIFIED	.000001 Amp	2.9 mm
CAT24C08TDE-GT3	Onsemi	EEPROM	AUTOMOTIVE	5	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	1024 words	3.3	2/5	8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSOP5/6,.11,37	EEPROMs	100	.95 mm	125 Cel	1KX8	1K	-40 Cel	NICKEL PALLADIUM GOLD	10100MMR	DUAL	HARDWARE	R-PDSO-G5	1	5.5 V	1 mm	1000000 Write/Erase Cycles	.4 MHz	1.6 mm	Not Qualified	5 ms	I2C	8192 bit	1.8 V		e4	30	260	.000002 Amp	2.9 mm
CAT24AA08TDI-GT10	Onsemi	EEPROM	INDUSTRIAL	5	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	1 mA	1024 words	1.8	1.8/5	8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSOP5/6,.11,37	EEPROMs	100	.95 mm	85 Cel	1KX8	1K	-40 Cel		10100MMR	DUAL	HARDWARE	R-PDSO-G5		5.5 V	1 mm	1000000 Write/Erase Cycles	.4 MHz	1.6 mm	Not Qualified	5 ms	I2C	8192 bit	1.7 V		e4	NOT SPECIFIED	NOT SPECIFIED	.000001 Amp	2.9 mm
CAT24C08C5AE-GT3	Onsemi	EEPROM	INDUSTRIAL	5	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		64 words	5		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.3 mm	85 Cel	64X16	64	-40 Cel	NICKEL PALLADIUM GOLD		BOTTOM		R-PBGA-B5		5.5 V	.35 mm		.4 MHz	.832 mm		5 ms	I2C	1024 bit	1.7 V		e4				.856 mm
CAT24C08C5ATR	Onsemi	EEPROM	INDUSTRIAL	5	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	2 mA	8192 words	3.3	1.8/5	1	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA5,3X3,10/6	EEPROMs	100	.3 mm	85 Cel	8KX1	8K	-40 Cel	TIN SILVER COPPER	10100MMR	BOTTOM	HARDWARE	R-PBGA-B5	1	5.5 V	.39 mm	1000000 Write/Erase Cycles	.4 MHz	.84 mm	Not Qualified	5 ms	I2C	8192 bit	1.7 V		e1	30	260	.000001 Amp	.86 mm
CAT24C16C5AI-GT3	Onsemi	EEPROM	AUTOMOTIVE	5	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		128 words	5		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.3 mm	125 Cel	128X16	128	-40 Cel	MATTE TIN		BOTTOM		R-PBGA-B5		5.5 V	.35 mm		.4 MHz	.832 mm		5 ms	I2C	2048 bit	1.8 V		e3				.856 mm
CAT24C16TDI-GT3	Onsemi	EEPROM	INDUSTRIAL	5	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	16384 words	3.3	1.8/5	1	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSOP5/6,.11,37	EEPROMs	100	.95 mm	85 Cel	16KX1	16K	-40 Cel	NICKEL PALLADIUM GOLD	1010MMMR	DUAL	HARDWARE	R-PDSO-G5	1	5.5 V	1 mm	1000000 Write/Erase Cycles	.4 MHz	1.6 mm	Not Qualified	5 ms	I2C	16384 bit	1.7 V		e4	30	260	.000001 Amp	2.9 mm
CAT24C16TDE-GT3	Onsemi	EEPROM	AUTOMOTIVE	5	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	2048 words	3.3	2/5	8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSOP5/6,.11,37	EEPROMs	100	.95 mm	125 Cel	2KX8	2K	-40 Cel	NICKEL PALLADIUM GOLD	1010MMMR	DUAL	HARDWARE	R-PDSO-G5	1	5.5 V	1 mm	1000000 Write/Erase Cycles	.4 MHz	1.6 mm	Not Qualified	5 ms	I2C	16384 bit	1.8 V		e4	30	260	.000005 Amp	2.9 mm
CAT24C00TPE-TE13	Onsemi	EEPROM	AUTOMOTIVE	5	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	16 words	3	2/5	8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP5/6,.11,37	EEPROMs	100	.95 mm	125 Cel	16X8	16	-40 Cel	TIN LEAD	1010XXXR	DUAL		R-PDSO-G5		5.5 V	1.45 mm	10000000 Write/Erase Cycles	.1 MHz	1.625 mm	Not Qualified	5 ms	I2C	128 bit	1.8 V		e0			.00001 Amp	2.92 mm
CAT24C01TDI-G	Onsemi	EEPROM	INDUSTRIAL	5	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	1 mA	1024 words	3.3	2/5	1	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSOP5/6,.11,37	EEPROMs	100	.95 mm	85 Cel	1KX1	1K	-40 Cel	MATTE TIN	1010000R	DUAL	HARDWARE	R-PDSO-G5	1	5.5 V	1 mm	1000000 Write/Erase Cycles	.4 MHz	1.6 mm	Not Qualified	5 ms	I2C	1024 bit	1.7 V		e3			.000001 Amp	2.9 mm
CAT24C05TDI	Onsemi	EEPROM	INDUSTRIAL	5	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		1 mA	512 words		2/5	8	SMALL OUTLINE, THIN PROFILE	TSOP5/6,.11,37	EEPROMs	100	.95 mm	85 Cel	512X8	512	-40 Cel		101000MR	DUAL	HARDWARE	R-PDSO-G5				1000000 Write/Erase Cycles			Not Qualified		I2C	4096 bit						.000001 Amp
CAT24AA08TDI-GT3	Onsemi	EEPROM	INDUSTRIAL	5	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	1 mA	1024 words	1.8	1.8/5	8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSOP5/6,.11,37	EEPROMs	100	.95 mm	85 Cel	1KX8	1K	-40 Cel	NICKEL PALLADIUM GOLD	10100MMR	DUAL	HARDWARE	R-PDSO-G5	1	5.5 V	1 mm	1000000 Write/Erase Cycles	.4 MHz	1.6 mm	Not Qualified	5 ms	I2C	8192 bit	1.7 V		e4	30	260	.000001 Amp	2.9 mm
CAT24C04TDI	Onsemi	EEPROM	INDUSTRIAL	5	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	4096 words	3.3	2/5	1	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSOP5/6,.11,37	EEPROMs	100	.95 mm	85 Cel	4KX1	4K	-40 Cel	MATTE TIN	101000MR	DUAL	HARDWARE	R-PDSO-G5	1	5.5 V	1 mm	1000000 Write/Erase Cycles	.4 MHz	1.6 mm	Not Qualified	5 ms	I2C	4096 bit	1.7 V		e3			.000001 Amp	2.9 mm
CAT24C03TDI	Onsemi	EEPROM	INDUSTRIAL	5	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		1 mA	256 words		2/5	8	SMALL OUTLINE, THIN PROFILE	TSOP5/6,.11,37	EEPROMs	100	.95 mm	85 Cel	256X8	256	-40 Cel		1010000R	DUAL	HARDWARE	R-PDSO-G5				1000000 Write/Erase Cycles			Not Qualified		I2C	2048 bit						.000001 Amp
CAT24C16TDE	Onsemi	EEPROM	AUTOMOTIVE	5	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	16384 words	3.3	2/5	1	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSOP5/6,.11,37	EEPROMs	100	.95 mm	125 Cel	16KX1	16K	-40 Cel	MATTE TIN	1010MMMR	DUAL	HARDWARE	R-PDSO-G5	1	5.5 V	1 mm	1000000 Write/Erase Cycles	.4 MHz	1.6 mm	Not Qualified	5 ms	I2C	16384 bit	1.8 V		e3			.000002 Amp	2.9 mm
CAV24C04C5ATR	Onsemi	EEPROM	AUTOMOTIVE	5	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		4096 words	3.6		1	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.3 mm	125 Cel	4KX1	4K	-40 Cel			BOTTOM		R-PBGA-B5		5.5 V	.39 mm		.4 MHz	.84 mm		5 ms	I2C	4096 bit	2.5 V	ALSO AVAILABLE 2.5-5.5V WITH 0.1MHZ					.86 mm
CAT24AA02TDI-T3	Onsemi	EEPROM	INDUSTRIAL	5	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	1 mA	256 words		2/5	8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSOP5/6,.11,37	EEPROMs	100	.95 mm	85 Cel	256X8	256	-40 Cel		1010000R	DUAL	HARDWARE	R-PDSO-G5		5.5 V	1 mm	1000000 Write/Erase Cycles	.4 MHz	1.6 mm	Not Qualified	5 ms	I2C	2048 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED	.000001 Amp	2.9 mm
CAT24AA16TDI-GT10	Onsemi	EEPROM	INDUSTRIAL	5	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		2048 words	3.3		8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH				.95 mm	85 Cel	2KX8	2K	-40 Cel	NICKEL PALLADIUM GOLD		DUAL		R-PDSO-G5		5.5 V	1 mm		.4 MHz	2.8 mm	Not Qualified	5 ms	I2C	16384 bit	1.7 V		e4				2.9 mm
CAT24AA08TDI	Onsemi	EEPROM	INDUSTRIAL	5	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		1 mA	1024 words		1.8/5	8	SMALL OUTLINE, THIN PROFILE	TSOP5/6,.11,37	EEPROMs	100	.95 mm	85 Cel	1KX8	1K	-40 Cel		10100MMR	DUAL	HARDWARE	R-PDSO-G5				1000000 Write/Erase Cycles			Not Qualified		I2C	8192 bit						.000001 Amp
CAT24C32TSI-T3	Onsemi	EEPROM	INDUSTRIAL	5	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	4096 words	5	2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSOP5/6,.11,37	EEPROMs	100	.95 mm	85 Cel	4KX8	4K	-40 Cel		1010DDDR	DUAL	HARDWARE	R-PDSO-G5		5.5 V	1.1 mm	1000000 Write/Erase Cycles	1 MHz	1.5 mm	Not Qualified	5 ms	I2C	32768 bit	1.7 V	100 YEAR DATA RETENTION	e3	NOT SPECIFIED	NOT SPECIFIED	.000001 Amp	3 mm
CAT24AA04TDI-GT10	Onsemi	EEPROM	INDUSTRIAL	5	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	1 mA	512 words	1.8	1.8/5	8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSOP5/6,.11,37	EEPROMs	100	.95 mm	85 Cel	512X8	512	-40 Cel		101000MR	DUAL	HARDWARE	R-PDSO-G5		5.5 V	1 mm	1000000 Write/Erase Cycles	.4 MHz	1.6 mm	Not Qualified	5 ms	I2C	4096 bit	1.7 V		e4	NOT SPECIFIED	NOT SPECIFIED	.000001 Amp	2.9 mm
CAT24C00GTBE-TE13	Onsemi	EEPROM	AUTOMOTIVE	5	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		2 mA	16 words		2/5	8	SMALL OUTLINE, THIN PROFILE	TSOP5/6,.11,37	EEPROMs	100	.95 mm	125 Cel	16X8	16	-40 Cel		1010XXXR	DUAL		R-PDSO-G5				10000000 Write/Erase Cycles			Not Qualified		I2C							.00001 Amp
CAT24C00TBE	Onsemi	EEPROM	AUTOMOTIVE	5	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	16 words	3	2/5	8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP5/6,.11,37	EEPROMs	100	.95 mm	125 Cel	16X8	16	-40 Cel	MATTE TIN	1010XXXR	DUAL		R-PDSO-G5		5.5 V	1.45 mm	10000000 Write/Erase Cycles	.1 MHz	1.625 mm	Not Qualified	5 ms	I2C	128 bit	1.8 V		e3			.00001 Amp	2.92 mm
CAT24C04TDE-T3	Onsemi	EEPROM	INDUSTRIAL	5	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	32 words	5	2/5	16	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSOP5/6,.11,37	EEPROMs	100	.95 mm	85 Cel	32X16	32	-40 Cel		101000MR	DUAL	HARDWARE	R-PDSO-G5		5.5 V	1 mm	1000000 Write/Erase Cycles	.4 MHz	1.6 mm	Not Qualified	5 ms	I2C	512 bit	1.7 V		e3	NOT SPECIFIED	NOT SPECIFIED	.000002 Amp	2.9 mm
CAT24C16TDE-T3	Onsemi	EEPROM	INDUSTRIAL	5	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	128 words	5	2/5	16	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSOP5/6,.11,37	EEPROMs	100	.95 mm	85 Cel	128X16	128	-40 Cel		1010MMMR	DUAL	HARDWARE	R-PDSO-G5		5.5 V	1 mm	1000000 Write/Erase Cycles	.4 MHz	1.6 mm	Not Qualified	5 ms	I2C	2048 bit	1.7 V		e3	NOT SPECIFIED	NOT SPECIFIED	.000002 Amp	2.9 mm
CAT24C02TDE-GT3A	Onsemi	EEPROM	AUTOMOTIVE	5	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	256 words	3.3	2/5	8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSOP5/6,.11,37	EEPROMs	100	.95 mm	125 Cel	256X8	256	-40 Cel	NICKEL PALLADIUM GOLD	1010000R	DUAL	HARDWARE	R-PDSO-G5	1	5.5 V	1 mm	1000000 Write/Erase Cycles	.4 MHz	1.6 mm	Not Qualified	5 ms	I2C	2048 bit	1.8 V		e4			.000005 Amp	2.9 mm
LE24L043CB	Onsemi	EEPROM	OTHER	5	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	3 mA	512 words	2.5	1.8/3.3	8	GRID ARRAY	BGA5,3X3,17/10	EEPROMs	20	.254 mm	85 Cel	512X8	512	-20 Cel		101000MR	BOTTOM	HARDWARE	R-PBGA-B5		3.6 V		100000 Write/Erase Cycles	.4 MHz		Not Qualified	10 ms	I2C	4096 bit	1.7 V					.000002 Amp
CAT24AA08TDI-T3	Onsemi	EEPROM	INDUSTRIAL	5	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	1 mA	1024 words	1.8	1.8/5	8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSOP5/6,.11,37	EEPROMs	100	.95 mm	85 Cel	1KX8	1K	-40 Cel		10100MMR	DUAL	HARDWARE	R-PDSO-G5		5.5 V	1 mm	1000000 Write/Erase Cycles	.4 MHz	1.6 mm	Not Qualified	5 ms	I2C	8192 bit	1.7 V		e3	NOT SPECIFIED	NOT SPECIFIED	.000001 Amp	2.9 mm
CAT24C01TDE-GT3	Onsemi	EEPROM	INDUSTRIAL	5	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	128 words	5	2/5	16	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSOP5/6,.11,37	EEPROMs	100	.95 mm	85 Cel	128X16	128	-40 Cel		1010000R	DUAL	HARDWARE	R-PDSO-G5		5.5 V	1 mm	1000000 Write/Erase Cycles	.4 MHz	1.6 mm	Not Qualified	5 ms	I2C	2048 bit	1.7 V		e4	NOT SPECIFIED	NOT SPECIFIED	.000002 Amp	2.9 mm
CAT24C00TPI-TE13	Onsemi	EEPROM	INDUSTRIAL	5	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	16 words	3	2/5	8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP5/6,.11,37	EEPROMs	100	.95 mm	85 Cel	16X8	16	-40 Cel	TIN LEAD	1010XXXR	DUAL		R-PDSO-G5		5.5 V	1.45 mm	10000000 Write/Erase Cycles	.1 MHz	1.625 mm	Not Qualified	5 ms	I2C	128 bit	1.8 V		e0			.000001 Amp	2.92 mm
CAT24C05TDI-G	Onsemi	EEPROM	INDUSTRIAL	5	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		1 mA	512 words		2/5	8	SMALL OUTLINE, THIN PROFILE	TSOP5/6,.11,37	EEPROMs	100	.95 mm	85 Cel	512X8	512	-40 Cel		101000MR	DUAL	HARDWARE	R-PDSO-G5				1000000 Write/Erase Cycles			Not Qualified		I2C	4096 bit						.000001 Amp
CAT24AA04TDI	Onsemi	EEPROM	INDUSTRIAL	5	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		1 mA	512 words		1.8/5	8	SMALL OUTLINE, THIN PROFILE	TSOP5/6,.11,37	EEPROMs	100	.95 mm	85 Cel	512X8	512	-40 Cel		101000MR	DUAL	HARDWARE	R-PDSO-G5				1000000 Write/Erase Cycles			Not Qualified		I2C	4096 bit						.000001 Amp
CAT24C00TBE-TE13	Onsemi	EEPROM	AUTOMOTIVE	5	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	16 words	3	2/5	8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP5/6,.11,37	EEPROMs	100	.95 mm	125 Cel	16X8	16	-40 Cel	MATTE TIN	1010XXXR	DUAL		R-PDSO-G5		5.5 V	1.45 mm	10000000 Write/Erase Cycles	.1 MHz	1.625 mm	Not Qualified	5 ms	I2C	128 bit	1.8 V		e3			.00001 Amp	2.92 mm
CAT24C08TDE-G	Onsemi	EEPROM	AUTOMOTIVE	5	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	8192 words	3.3	2/5	1	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSOP5/6,.11,37	EEPROMs	100	.95 mm	125 Cel	8KX1	8K	-40 Cel	MATTE TIN	10100MMR	DUAL	HARDWARE	R-PDSO-G5	1	5.5 V	1 mm	1000000 Write/Erase Cycles	.4 MHz	1.6 mm	Not Qualified	5 ms	I2C	8192 bit	1.8 V		e3			.000002 Amp	2.9 mm
ST1336DD15/XXYY	STMicroelectronics	EEPROM CARD		5		UNSPECIFIED	UNSPECIFIED	NO	1	CMOS	UNSPECIFIED	SERIAL	SYNCHRONOUS		34 words	5		8	MICROELECTRONIC ASSEMBLY						34X8	34				UNSPECIFIED		X-XXMA-X5							Not Qualified			272 bit								5
ST1336-W4/XXYY	STMicroelectronics	EEPROM		5	DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		34 words	5		8	UNCASED CHIP						34X8	34				UPPER		X-XUUC-N5							Not Qualified	5 ms	I2C	272 bit				NOT SPECIFIED	NOT SPECIFIED
ST1336DW4/XXYY	STMicroelectronics	EEPROM CARD		5	DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		34 words	5		8	UNCASED CHIP						34X8	34				UPPER		X-XUUC-N5							Not Qualified			272 bit								5

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.