5 EEPROM 629

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Package Shape Total Dose (V) Package Body Material Surface Mount No. of Functions Technology Screening Level Terminal Form Parallel or Serial Operating Mode Sector Size (Words) Maximum Supply Current No. of Words Input/Output Type Nominal Supply Voltage / Vsup (V) Toggle Bit Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Minimum Data Retention Time Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Operating Temperature No. of Sectors/Size Command User Interface Terminal Finish I2C Control Byte Ready or Busy Terminal Position No. of Ports Write Protection JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Endurance Maximum Clock Frequency (fCLK) Width Qualification Maximum Write Cycle Time (tWC) Serial Bus Type Boot Block Memory Density Minimum Supply Voltage (Vsup) Additional Features Page Size (words) JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Type Maximum Standby Current Length Common Flash Interface Maximum Access Time Programming Voltage (V) Data Polling

CAT24AA16TDIT3

Onsemi

EEPROM

INDUSTRIAL

5

VSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

2048 words

3.3

8

SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH

.95 mm

85 Cel

2KX8

2K

-40 Cel

DUAL

R-PDSO-G5

5.5 V

1 mm

.4 MHz

2.8 mm

Not Qualified

5 ms

I2C

16384 bit

1.7 V

2.9 mm

CAT24C04C5AE-GT3

Onsemi

EEPROM

INDUSTRIAL

5

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

SERIAL

SYNCHRONOUS

32 words

5

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.3 mm

85 Cel

32X16

32

-40 Cel

NICKEL PALLADIUM GOLD

BOTTOM

R-PBGA-B5

5.5 V

.35 mm

.4 MHz

.832 mm

5 ms

I2C

512 bit

1.7 V

e4

.856 mm

CAT24C00GTBI-TE13

Onsemi

EEPROM

INDUSTRIAL

5

TSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

SERIAL

2 mA

16 words

2/5

8

SMALL OUTLINE, THIN PROFILE

TSOP5/6,.11,37

EEPROMs

100

.95 mm

85 Cel

16X8

16

-40 Cel

1010XXXR

DUAL

R-PDSO-G5

10000000 Write/Erase Cycles

Not Qualified

I2C

.000001 Amp

CAT24C02TDE-G

Onsemi

EEPROM

AUTOMOTIVE

5

VSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

2 mA

2048 words

3.3

2/5

1

SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH

TSOP5/6,.11,37

EEPROMs

100

.95 mm

125 Cel

2KX1

2K

-40 Cel

MATTE TIN

1010000R

DUAL

HARDWARE

R-PDSO-G5

1

5.5 V

1 mm

1000000 Write/Erase Cycles

.4 MHz

1.6 mm

Not Qualified

5 ms

I2C

2048 bit

1.8 V

e3

.000002 Amp

2.9 mm

CAT24C04TDI-G

Onsemi

EEPROM

INDUSTRIAL

5

VSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

2 mA

4096 words

3.3

2/5

1

SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH

TSOP5/6,.11,37

EEPROMs

100

.95 mm

85 Cel

4KX1

4K

-40 Cel

MATTE TIN

101000MR

DUAL

HARDWARE

R-PDSO-G5

1

5.5 V

1 mm

1000000 Write/Erase Cycles

.4 MHz

1.6 mm

Not Qualified

5 ms

I2C

4096 bit

1.7 V

e3

.000001 Amp

2.9 mm

CAT24C16TDI

Onsemi

EEPROM

INDUSTRIAL

5

VSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

2 mA

16384 words

3.3

2/5

1

SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH

TSOP5/6,.11,37

EEPROMs

100

.95 mm

85 Cel

16KX1

16K

-40 Cel

MATTE TIN

1010MMMR

DUAL

HARDWARE

R-PDSO-G5

1

5.5 V

1 mm

1000000 Write/Erase Cycles

.4 MHz

1.6 mm

Not Qualified

5 ms

I2C

16384 bit

1.7 V

e3

.000001 Amp

2.9 mm

CAT24C16HU4I-T3

Onsemi

EEPROM

AUTOMOTIVE

5

VSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

128 words

5

16

SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH

.95 mm

125 Cel

128X16

128

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

R-PDSO-G5

5.5 V

1 mm

.4 MHz

1.6 mm

5 ms

I2C

2048 bit

1.8 V

e4

2.9 mm

CAT24C16C5AE-T3

Onsemi

EEPROM

INDUSTRIAL

5

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

SERIAL

SYNCHRONOUS

128 words

5

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.3 mm

85 Cel

128X16

128

-40 Cel

MATTE TIN

BOTTOM

R-PBGA-B5

5.5 V

.35 mm

.4 MHz

.832 mm

5 ms

I2C

2048 bit

1.7 V

e3

.856 mm

CAT24C16TDE-G

Onsemi

EEPROM

AUTOMOTIVE

5

VSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

2 mA

16384 words

3.3

2/5

1

SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH

TSOP5/6,.11,37

EEPROMs

100

.95 mm

125 Cel

16KX1

16K

-40 Cel

MATTE TIN

1010MMMR

DUAL

HARDWARE

R-PDSO-G5

1

5.5 V

1 mm

1000000 Write/Erase Cycles

.4 MHz

1.6 mm

Not Qualified

5 ms

I2C

16384 bit

1.8 V

e3

.000002 Amp

2.9 mm

CAT24C03TDI-T3

Onsemi

EEPROM

INDUSTRIAL

5

VSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

1 mA

256 words

3.3

2/5

8

SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH

TSOP5/6,.11,37

EEPROMs

100

.95 mm

85 Cel

256X8

256

-40 Cel

1010000R

DUAL

HARDWARE

R-PDSO-G5

5.5 V

1 mm

1000000 Write/Erase Cycles

.4 MHz

1.6 mm

Not Qualified

5 ms

I2C

2048 bit

1.8 V

e3

NOT SPECIFIED

NOT SPECIFIED

.000001 Amp

2.9 mm

CAT24C03TDI-GT3

Onsemi

EEPROM

INDUSTRIAL

5

VSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

1 mA

256 words

3.3

2/5

8

SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH

TSOP5/6,.11,37

EEPROMs

100

.95 mm

85 Cel

256X8

256

-40 Cel

NICKEL PALLADIUM GOLD

1010000R

DUAL

HARDWARE

R-PDSO-G5

1

5.5 V

1 mm

1000000 Write/Erase Cycles

.4 MHz

1.6 mm

Not Qualified

5 ms

I2C

2048 bit

1.8 V

e4

260

.000001 Amp

2.9 mm

CAT24AA01TDI-G

Onsemi

EEPROM

INDUSTRIAL

5

TSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

SERIAL

1 mA

128 words

2/5

8

SMALL OUTLINE, THIN PROFILE

TSOP5/6,.11,37

EEPROMs

100

.95 mm

85 Cel

128X8

128

-40 Cel

1010000R

DUAL

HARDWARE

R-PDSO-G5

1000000 Write/Erase Cycles

Not Qualified

I2C

1024 bit

.000001 Amp

CAT24C01TDE-T3

Onsemi

EEPROM

INDUSTRIAL

5

VSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

2 mA

128 words

5

2/5

16

SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH

TSOP5/6,.11,37

EEPROMs

100

.95 mm

85 Cel

128X16

128

-40 Cel

1010000R

DUAL

HARDWARE

R-PDSO-G5

5.5 V

1 mm

1000000 Write/Erase Cycles

.4 MHz

1.6 mm

Not Qualified

5 ms

I2C

2048 bit

1.7 V

e3

NOT SPECIFIED

NOT SPECIFIED

.000002 Amp

2.9 mm

CAT24C02TDE

Onsemi

EEPROM

AUTOMOTIVE

5

VSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

2 mA

2048 words

3.3

2/5

1

SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH

TSOP5/6,.11,37

EEPROMs

100

.95 mm

125 Cel

2KX1

2K

-40 Cel

MATTE TIN

1010000R

DUAL

HARDWARE

R-PDSO-G5

1

5.5 V

1 mm

1000000 Write/Erase Cycles

.4 MHz

1.6 mm

Not Qualified

5 ms

I2C

2048 bit

1.8 V

e3

.000002 Amp

2.9 mm

CAT24C02TDE-GT3

Onsemi

EEPROM

AUTOMOTIVE

5

VSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

2 mA

256 words

3.3

2/5

8

SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH

TSOP5/6,.11,37

EEPROMs

100

.95 mm

125 Cel

256X8

256

-40 Cel

NICKEL PALLADIUM GOLD

1010000R

DUAL

HARDWARE

R-PDSO-G5

1

5.5 V

1 mm

1000000 Write/Erase Cycles

.4 MHz

1.6 mm

Not Qualified

5 ms

I2C

2048 bit

1.8 V

e4

30

260

.000005 Amp

2.9 mm

CAV24C16C5ATR

Onsemi

EEPROM

AUTOMOTIVE

5

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

SERIAL

SYNCHRONOUS

16384 words

3.6

1

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.3 mm

125 Cel

16KX1

16K

-40 Cel

BOTTOM

R-PBGA-B5

5.5 V

.39 mm

.4 MHz

.84 mm

5 ms

I2C

16384 bit

2.5 V

ALSO AVAILABLE 2.5-5.5V WITH 0.1MHZ

.86 mm

CAT24C32BTSI-T3

Onsemi

EEPROM

INDUSTRIAL

5

TSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

4096 words

1.8

8

SMALL OUTLINE, THIN PROFILE

.95 mm

85 Cel

4KX8

4K

-40 Cel

DUAL

R-PDSO-G5

5.5 V

1.1 mm

.4 MHz

1.5 mm

4 ms

I2C

32768 bit

1.55 V

3 mm

CAV24C32C5CTR

Onsemi

EEPROM

AUTOMOTIVE

5

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

SERIAL

SYNCHRONOUS

4096 words

3.3

8

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.4 mm

125 Cel

4KX8

4K

-40 Cel

Tin/Silver/Copper (Sn/Ag/Cu)

BOTTOM

R-PBGA-B5

1

5.5 V

.35 mm

.4 MHz

.91 mm

5 ms

I2C

32768 bit

2.5 V

e1

30

260

1.34 mm

CAT24C04C5ATR

Onsemi

EEPROM

INDUSTRIAL

5

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

SERIAL

SYNCHRONOUS

2 mA

4096 words

3.3

1.8/5

1

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA5,3X3,10/6

EEPROMs

100

.3 mm

85 Cel

4KX1

4K

-40 Cel

Tin/Silver/Copper (Sn/Ag/Cu)

1010000R

BOTTOM

HARDWARE

R-PBGA-B5

1

5.5 V

.39 mm

1000000 Write/Erase Cycles

.4 MHz

.84 mm

Not Qualified

5 ms

I2C

4096 bit

1.7 V

e1

NOT SPECIFIED

NOT SPECIFIED

.000001 Amp

.86 mm

CAT24C32C5CTR

Onsemi

EEPROM

INDUSTRIAL

5

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

SERIAL

SYNCHRONOUS

4096 words

3.3

8

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.4 mm

85 Cel

4KX8

4K

-40 Cel

Tin/Silver/Copper (Sn/Ag/Cu)

BOTTOM

R-PBGA-B5

1

5.5 V

.35 mm

1 MHz

.91 mm

5 ms

I2C

32768 bit

2.5 V

ALSO AVAILABLE 1.7-5.5V WITH 0.1MHZ WITH 0.4MHZ FOR -40 TO 125 AND -40 TO 85 DEG CEL

e1

30

260

1.34 mm

CAT24C08C5AE-T3

Onsemi

EEPROM

INDUSTRIAL

5

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

SERIAL

SYNCHRONOUS

64 words

5

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.3 mm

85 Cel

64X16

64

-40 Cel

MATTE TIN

BOTTOM

R-PBGA-B5

5.5 V

.35 mm

.4 MHz

.832 mm

5 ms

I2C

1024 bit

1.7 V

e3

.856 mm

CAT24C04C5AI-GT3

Onsemi

EEPROM

AUTOMOTIVE

5

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

SERIAL

SYNCHRONOUS

32 words

5

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.3 mm

125 Cel

32X16

32

-40 Cel

MATTE TIN

BOTTOM

R-PBGA-B5

5.5 V

.35 mm

.4 MHz

.832 mm

5 ms

I2C

512 bit

1.8 V

e3

.856 mm

CAT24C32C5ATR

Onsemi

EEPROM

INDUSTRIAL

5

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

SERIAL

SYNCHRONOUS

4096 words

3.3

1.8/5

8

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

EEPROMs

.4 mm

85 Cel

4KX8

4K

-40 Cel

Tin/Silver/Copper (Sn/Ag/Cu)

BOTTOM

R-PBGA-B5

1

5.5 V

.35 mm

1 MHz

.91 mm

Not Qualified

5 ms

I2C

32768 bit

2.5 V

ALSO AVAILABLE 1.7-5.5V WITH 0.1MHZ WITH 0.4MHZ FOR -40 TO 125 AND -40 TO 85 DEG CEL

e1

30

260

1.34 mm

CAT24AA01TDI-T10

Onsemi

EEPROM

INDUSTRIAL

5

VSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

1 mA

128 words

2/5

8

SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH

TSOP5/6,.11,37

EEPROMs

100

.95 mm

85 Cel

128X8

128

-40 Cel

1010000R

DUAL

HARDWARE

R-PDSO-G5

5.5 V

1 mm

1000000 Write/Erase Cycles

.4 MHz

1.6 mm

Not Qualified

5 ms

I2C

1024 bit

1.7 V

e3

NOT SPECIFIED

NOT SPECIFIED

.000001 Amp

2.9 mm

CAT24AA04TDI-T10

Onsemi

EEPROM

INDUSTRIAL

5

VSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

1 mA

512 words

1.8

1.8/5

8

SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH

TSOP5/6,.11,37

EEPROMs

100

.95 mm

85 Cel

512X8

512

-40 Cel

101000MR

DUAL

HARDWARE

R-PDSO-G5

5.5 V

1 mm

1000000 Write/Erase Cycles

.4 MHz

1.6 mm

Not Qualified

5 ms

I2C

4096 bit

1.7 V

e3

NOT SPECIFIED

NOT SPECIFIED

.000001 Amp

2.9 mm

CAT24C04C5AE-T3

Onsemi

EEPROM

INDUSTRIAL

5

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

SERIAL

SYNCHRONOUS

32 words

5

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.3 mm

85 Cel

32X16

32

-40 Cel

MATTE TIN

BOTTOM

R-PBGA-B5

5.5 V

.35 mm

.4 MHz

.832 mm

5 ms

I2C

512 bit

1.7 V

e3

.856 mm

CAT24C02TDE-T3

Onsemi

EEPROM

AUTOMOTIVE

5

VSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

2 mA

256 words

3.3

2/5

8

SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH

TSOP5/6,.11,37

EEPROMs

100

.95 mm

125 Cel

256X8

256

-40 Cel

MATTE TIN

1010000R

DUAL

HARDWARE

R-PDSO-G5

5.5 V

1 mm

1000000 Write/Erase Cycles

.4 MHz

1.6 mm

Not Qualified

5 ms

I2C

2048 bit

1.8 V

e3

.000002 Amp

2.9 mm

CAT24C02TDI

Onsemi

EEPROM

INDUSTRIAL

5

VSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

2 mA

2048 words

3.3

2/5

1

SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH

TSOP5/6,.11,37

EEPROMs

100

.95 mm

85 Cel

2KX1

2K

-40 Cel

MATTE TIN

1010000R

DUAL

HARDWARE

R-PDSO-G5

1

5.5 V

1 mm

1000000 Write/Erase Cycles

.4 MHz

1.6 mm

Not Qualified

5 ms

I2C

2048 bit

1.7 V

e3

.000001 Amp

2.9 mm

CAT24C00GTBI

Onsemi

EEPROM

INDUSTRIAL

5

TSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

SERIAL

2 mA

16 words

2/5

8

SMALL OUTLINE, THIN PROFILE

TSOP5/6,.11,37

EEPROMs

100

.95 mm

85 Cel

16X8

16

-40 Cel

1010XXXR

DUAL

R-PDSO-G5

10000000 Write/Erase Cycles

Not Qualified

I2C

.000001 Amp

CAT24C16LI

Onsemi

EEPROM

AUTOMOTIVE

5

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

SERIAL

SYNCHRONOUS

2 mA

64 words

5

2/5

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

DIP8,.3

EEPROMs

100

.3 mm

125 Cel

64X16

64

-40 Cel

TIN

1010MMMR

BOTTOM

HARDWARE

R-PBGA-B5

5.5 V

.35 mm

1000000 Write/Erase Cycles

.4 MHz

.832 mm

Not Qualified

5 ms

I2C

1024 bit

1.8 V

e3

260

.000001 Amp

.856 mm

CAT24C01TDE

Onsemi

EEPROM

AUTOMOTIVE

5

VSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

2 mA

1024 words

3.3

2/5

1

SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH

TSOP5/6,.11,37

EEPROMs

100

.95 mm

125 Cel

1KX1

1K

-40 Cel

MATTE TIN

1010000R

DUAL

HARDWARE

R-PDSO-G5

1

5.5 V

1 mm

1000000 Write/Erase Cycles

.4 MHz

1.6 mm

Not Qualified

5 ms

I2C

1024 bit

1.8 V

e3

.000002 Amp

2.9 mm

CAT24C08TDI-G

Onsemi

EEPROM

INDUSTRIAL

5

VSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

2 mA

8192 words

3.3

2/5

1

SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH

TSOP5/6,.11,37

EEPROMs

100

.95 mm

85 Cel

8KX1

8K

-40 Cel

MATTE TIN

10100MMR

DUAL

HARDWARE

R-PDSO-G5

1

5.5 V

1 mm

1000000 Write/Erase Cycles

.4 MHz

1.6 mm

Not Qualified

5 ms

I2C

8192 bit

1.7 V

e3

.000001 Amp

2.9 mm

CAT24AA04TDI-G

Onsemi

EEPROM

INDUSTRIAL

5

TSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

SERIAL

1 mA

512 words

1.8/5

8

SMALL OUTLINE, THIN PROFILE

TSOP5/6,.11,37

EEPROMs

100

.95 mm

85 Cel

512X8

512

-40 Cel

101000MR

DUAL

HARDWARE

R-PDSO-G5

1000000 Write/Erase Cycles

Not Qualified

I2C

4096 bit

.000001 Amp

CAT24C16TDI-G

Onsemi

EEPROM

INDUSTRIAL

5

VSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

2 mA

16384 words

3.3

2/5

1

SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH

TSOP5/6,.11,37

EEPROMs

100

.95 mm

85 Cel

16KX1

16K

-40 Cel

MATTE TIN

1010MMMR

DUAL

HARDWARE

R-PDSO-G5

1

5.5 V

1 mm

1000000 Write/Erase Cycles

.4 MHz

1.6 mm

Not Qualified

5 ms

I2C

16384 bit

1.7 V

e3

.000001 Amp

2.9 mm

CAT24AA16TDIT10

Onsemi

EEPROM

INDUSTRIAL

5

VSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

2048 words

3.3

8

SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH

.95 mm

85 Cel

2KX8

2K

-40 Cel

DUAL

R-PDSO-G5

5.5 V

1 mm

.4 MHz

2.8 mm

Not Qualified

5 ms

I2C

16384 bit

1.7 V

2.9 mm

CAT24AA04TDI-T3

Onsemi

EEPROM

INDUSTRIAL

5

VSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

1 mA

512 words

1.8

1.8/5

8

SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH

TSOP5/6,.11,37

EEPROMs

100

.95 mm

85 Cel

512X8

512

-40 Cel

101000MR

DUAL

HARDWARE

R-PDSO-G5

5.5 V

1 mm

1000000 Write/Erase Cycles

.4 MHz

1.6 mm

Not Qualified

5 ms

I2C

4096 bit

1.7 V

e3

NOT SPECIFIED

NOT SPECIFIED

.000001 Amp

2.9 mm

CAT24C00TPE

Onsemi

EEPROM

AUTOMOTIVE

5

LSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

2 mA

16 words

3

2/5

8

SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

TSOP5/6,.11,37

EEPROMs

100

.95 mm

125 Cel

16X8

16

-40 Cel

TIN LEAD

1010XXXR

DUAL

R-PDSO-G5

5.5 V

1.45 mm

10000000 Write/Erase Cycles

.1 MHz

1.625 mm

Not Qualified

5 ms

I2C

128 bit

1.8 V

e0

.00001 Amp

2.92 mm

CAT24C02TDI-G

Onsemi

EEPROM

INDUSTRIAL

5

VSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

2 mA

2048 words

3.3

2/5

1

SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH

TSOP5/6,.11,37

EEPROMs

100

.95 mm

85 Cel

2KX1

2K

-40 Cel

MATTE TIN

1010000R

DUAL

HARDWARE

R-PDSO-G5

1

5.5 V

1 mm

1000000 Write/Erase Cycles

.4 MHz

1.6 mm

Not Qualified

5 ms

I2C

2048 bit

1.7 V

e3

.000001 Amp

2.9 mm

CAT24C08TDE-T3

Onsemi

EEPROM

INDUSTRIAL

5

VSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

2 mA

64 words

5

2/5

16

SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH

TSOP5/6,.11,37

EEPROMs

100

.95 mm

85 Cel

64X16

64

-40 Cel

10100MMR

DUAL

HARDWARE

R-PDSO-G5

5.5 V

1 mm

1000000 Write/Erase Cycles

.4 MHz

1.6 mm

Not Qualified

5 ms

I2C

1024 bit

1.7 V

e3

NOT SPECIFIED

NOT SPECIFIED

.000002 Amp

2.9 mm

CAT24AA02TDI-G

Onsemi

EEPROM

INDUSTRIAL

5

TSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

SERIAL

1 mA

256 words

2/5

8

SMALL OUTLINE, THIN PROFILE

TSOP5/6,.11,37

EEPROMs

100

.95 mm

85 Cel

256X8

256

-40 Cel

1010000R

DUAL

HARDWARE

R-PDSO-G5

1000000 Write/Erase Cycles

Not Qualified

I2C

2048 bit

.000001 Amp

CAT24C00TBI-TE13

Onsemi

EEPROM

INDUSTRIAL

5

LSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

2 mA

16 words

3

2/5

8

SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

TSOP5/6,.11,37

EEPROMs

100

.95 mm

85 Cel

16X8

16

-40 Cel

MATTE TIN

1010XXXR

DUAL

R-PDSO-G5

5.5 V

1.45 mm

10000000 Write/Erase Cycles

.1 MHz

1.625 mm

Not Qualified

5 ms

I2C

128 bit

1.8 V

e3

.000001 Amp

2.92 mm

LE24163LBXA-SH

Onsemi

EEPROM

INDUSTRIAL

5

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

SERIAL

SYNCHRONOUS

2048 words

2.5

8

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.4 mm

85 Cel

2KX8

2K

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B5

1

3.6 V

.33 mm

.4 MHz

.8 mm

5 ms

16384 bit

1.7 V

FOR WRITE OPERATION-1.8V TO 3.6V SUPPLY

e1

30

260

1.2 mm

3

CAT24C01HU4I-T3

Onsemi

EEPROM

AUTOMOTIVE

5

VSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

128 words

5

16

SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH

.95 mm

125 Cel

128X16

128

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

R-PDSO-G5

5.5 V

1 mm

.4 MHz

1.6 mm

5 ms

I2C

2048 bit

1.8 V

e4

2.9 mm

CAV24C32C5ATR

Onsemi

EEPROM

AUTOMOTIVE

5

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

SERIAL

SYNCHRONOUS

4096 words

3.3

8

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.4 mm

125 Cel

4KX8

4K

-40 Cel

Tin/Silver/Copper (Sn/Ag/Cu)

BOTTOM

R-PBGA-B5

5.5 V

.35 mm

.4 MHz

.91 mm

5 ms

I2C

32768 bit

2.5 V

e1

1.34 mm

CAT24C08C5AI-GT3

Onsemi

EEPROM

AUTOMOTIVE

5

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

SERIAL

SYNCHRONOUS

64 words

5

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.3 mm

125 Cel

64X16

64

-40 Cel

MATTE TIN

BOTTOM

R-PBGA-B5

5.5 V

.35 mm

.4 MHz

.832 mm

5 ms

I2C

1024 bit

1.8 V

e3

.856 mm

CAT24C08TDE

Onsemi

EEPROM

AUTOMOTIVE

5

VSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

2 mA

8192 words

3.3

2/5

1

SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH

TSOP5/6,.11,37

EEPROMs

100

.95 mm

125 Cel

8KX1

8K

-40 Cel

MATTE TIN

10100MMR

DUAL

HARDWARE

R-PDSO-G5

1

5.5 V

1 mm

1000000 Write/Erase Cycles

.4 MHz

1.6 mm

Not Qualified

5 ms

I2C

8192 bit

1.8 V

e3

.000002 Amp

2.9 mm

CAT24C00TPI

Onsemi

EEPROM

INDUSTRIAL

5

LSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

2 mA

16 words

3

2/5

8

SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

TSOP5/6,.11,37

EEPROMs

100

.95 mm

85 Cel

16X8

16

-40 Cel

TIN LEAD

1010XXXR

DUAL

R-PDSO-G5

5.5 V

1.45 mm

10000000 Write/Erase Cycles

.1 MHz

1.625 mm

Not Qualified

5 ms

I2C

128 bit

1.8 V

e0

.000001 Amp

2.92 mm

CAT24C00TBI

Onsemi

EEPROM

INDUSTRIAL

5

LSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

2 mA

16 words

3

2/5

8

SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

TSOP5/6,.11,37

EEPROMs

100

.95 mm

85 Cel

16X8

16

-40 Cel

MATTE TIN

1010XXXR

DUAL

R-PDSO-G5

5.5 V

1.45 mm

10000000 Write/Erase Cycles

.1 MHz

1.625 mm

Not Qualified

5 ms

I2C

128 bit

1.8 V

e3

.000001 Amp

2.92 mm

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.