169 Flash Memory 44

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Length	Programming Voltage (V)	Data Polling
MTFC16GJDEC-4MIT	Micron Technology	FLASH CARD	INDUSTRIAL	169	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		17179869184 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA169,14X28,20		.5 mm	85 Cel		16GX8	16G	-40 Cel		TIN SILVER COPPER		BOTTOM		R-PBGA-B169	3.6 V	.8 mm	52 MHz	14 mm		137438953472 bit	2.7 V		e1			MLC NAND TYPE	18 mm	3.3
MTFC16GJDEC-2MWT	Micron Technology	FLASH CARD	OTHER	169	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		17179869184 words	3.3	NO		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA169,14X28,20		.5 mm	85 Cel		16GX8	16G	-25 Cel	NO	TIN SILVER COPPER		BOTTOM		R-PBGA-B169	3.6 V	.8 mm	52 MHz	14 mm		137438953472 bit	2.7 V					MLC NAND TYPE	18 mm	3.3	NO
KLMBG8FE3B-A001	Samsung	FLASH CARD	OTHER	169	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		34359738368 words	3.3			8	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel		32GX8	32G	-25 Cel				BOTTOM		R-PBGA-B169	3.6 V	1.2 mm	52 MHz	12 mm		274877906944 bit	2.7 V	1.8V NOMINAL SUPPLY IS ALSO AVAILABLE					16 mm	3.3
MTFC16GAKAEEF-AAT	Micron Technology	FLASH CARD	INDUSTRIAL	169	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		17179869184 words		NO		8	GRID ARRAY, THIN PROFILE	BGA169,14X28,20		.5 mm	105 Cel		16GX8	16G	-40 Cel	NO	GOLD OVER NICKEL	YES	BOTTOM		R-PBGA-B169	3.6 V	1.2 mm	52 MHz	14 mm		137438953472 bit	2.7 V		e4			NAND TYPE	18 mm	2.7	NO
MTFC16GJGEF-AITZ	Micron Technology	FLASH CARD	INDUSTRIAL	169	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		17179869184 words				8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA169,14X14,20		.5 mm	85 Cel		16GX8	16G	-40 Cel				BOTTOM		R-PBGA-B169	3.6 V	1.364 mm	52 MHz	14 mm		137438953472 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NAND TYPE	18 mm
NAND16GAH0DZA5E	STMicroelectronics	FLASH CARD	COMMERCIAL EXTENDED	169	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		268435456 words	1.8		1.8/3,3	8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA169,14X28,20	Other Memory ICs	.5 mm	85 Cel		256MX8	256M	-25 Cel		TIN SILVER COPPER		BOTTOM		R-PBGA-B169	1.95 V	1.4 mm	52 MHz	12 mm	Not Qualified	2147483648 bit	1.65 V	ALSO OPERATES WITH 3V SUPPLY	e1				16 mm	3
NAND16GAH0DZA5F	STMicroelectronics	FLASH CARD	COMMERCIAL EXTENDED	169	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		268435456 words	1.8		1.8/3,3	8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA169,14X28,20	Other Memory ICs	.5 mm	85 Cel		256MX8	256M	-25 Cel		TIN SILVER COPPER		BOTTOM		R-PBGA-B169	1.95 V	1.4 mm	52 MHz	12 mm	Not Qualified	2147483648 bit	1.65 V	ALSO OPERATES WITH 3V SUPPLY	e1				16 mm	3
NAND08GAH0AZA5E	STMicroelectronics	FLASH CARD	COMMERCIAL EXTENDED	169	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		134217728 words	1.8		1.8/3,3	8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA169,14X28,20	Other Memory ICs	.5 mm	85 Cel		128MX8	128M	-25 Cel		TIN SILVER COPPER		BOTTOM		R-PBGA-B169	1.95 V	1.4 mm	52 MHz	12 mm	Not Qualified	1073741824 bit	1.65 V	ALSO OPERATES WITH 3V SUPPLY	e1				16 mm	3
NAND08GAH0AZA5F	STMicroelectronics	FLASH CARD	COMMERCIAL EXTENDED	169	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		134217728 words	1.8		1.8/3,3	8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA169,14X28,20	Other Memory ICs	.5 mm	85 Cel		128MX8	128M	-25 Cel		TIN SILVER COPPER		BOTTOM		R-PBGA-B169	1.95 V	1.4 mm	52 MHz	12 mm	Not Qualified	1073741824 bit	1.65 V	ALSO OPERATES WITH 3V SUPPLY	e1				16 mm	3
THGBM1G7D8EBAI0	Toshiba	FLASH	OTHER	169	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		8589934592 words	3.3			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.5 mm	85 Cel		8GX16	8G	-25 Cel				BOTTOM		R-PBGA-B169	3.6 V	1.4 mm		12 mm	Not Qualified	137438953472 bit	2.7 V					MLC NAND TYPE	18 mm	3.3
THGBM1G5D2EBAI7	Toshiba	FLASH	OTHER	169	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		2147483648 words	3.3			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.5 mm	85 Cel		2GX16	2G	-25 Cel				BOTTOM		R-PBGA-B169	3.6 V	1.3 mm		12 mm	Not Qualified	34359738368 bit	2.7 V					MLC NAND TYPE	16 mm	3.3
THGBMHG8C4LBAIR	Toshiba	FLASH	OTHER	169	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		34359738368 words				8	GRID ARRAY				85 Cel		32GX8	32G	-25 Cel				BOTTOM		R-PBGA-B169	3.6 V					274877906944 bit	2.7 V							2.7
THGBM5G7B2JBAIM	Toshiba	FLASH CARD	OTHER	169		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL				17179869184 words				8					85 Cel		16GX8	16G	-25 Cel				BOTTOM		R-PBGA-B169	3.6 V					137438953472 bit	2.7 V					NAND TYPE		2.7
THGBM5G7A2JBAIM	Toshiba	FLASH CARD	OTHER	169		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL				17179869184 words				8					85 Cel		16GX8	16G	-25 Cel				BOTTOM		R-PBGA-B169	3.6 V					137438953472 bit	2.7 V							2.7
THGBM1G6D4EBAI4	Toshiba	FLASH	OTHER	169	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		4294967296 words	3.3			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.5 mm	85 Cel		4GX16	4G	-25 Cel		TIN SILVER COPPER		BOTTOM		R-PBGA-B169	3.6 V	1.3 mm		12 mm	Not Qualified	68719476736 bit	2.7 V		e1			MLC NAND TYPE	18 mm	3.3
THGBMAG9B8JBAIE	Toshiba	FLASH CARD	OTHER	169		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL				68719476736 words				8					85 Cel		64GX8	64G	-25 Cel				BOTTOM		R-PBGA-B169	3.6 V					549755813888 bit	2.7 V					NAND TYPE		2.7
THGBMAG8B4JBAAM	Toshiba	FLASH CARD	INDUSTRIAL	169		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL				34359738368 words				8					85 Cel		32GX8	32G	-40 Cel				BOTTOM		R-PBGA-B169	3.6 V					274877906944 bit	2.7 V					NAND TYPE
THGBM5G8A4JBAIM	Toshiba	FLASH CARD	OTHER	169		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL				34359738368 words				8					85 Cel		32GX8	32G	-25 Cel				BOTTOM		R-PBGA-B169	3.6 V					274877906944 bit	2.7 V							2.7
THGBM5G8B4JBAIM	Toshiba	FLASH CARD	OTHER	169		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL				34359738368 words				8					85 Cel		32GX8	32G	-25 Cel				BOTTOM		R-PBGA-B169	3.6 V					274877906944 bit	2.7 V					NAND TYPE		2.7
THGBM1G8D8EBAI2	Toshiba	FLASH	OTHER	169	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		8589934592 words	3.3			32	GRID ARRAY, LOW PROFILE, FINE PITCH			.5 mm	85 Cel		8GX32	8G	-25 Cel		TIN SILVER COPPER		BOTTOM		R-PBGA-B169	3.6 V	1.4 mm		14 mm	Not Qualified	274877906944 bit	2.7 V		e1			MLC NAND TYPE	18 mm	3.3
THGBMAG7B2JBAIM	Toshiba	FLASH CARD	OTHER	169		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL				17179869184 words				8					85 Cel		16GX8	16G	-25 Cel				BOTTOM		R-PBGA-B169	3.6 V					137438953472 bit	2.7 V					NAND TYPE		2.7
THGBMAG8B4JBAIM	Toshiba	FLASH CARD	OTHER	169		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL				34359738368 words				8					85 Cel		32GX8	32G	-25 Cel				BOTTOM		R-PBGA-B169	3.6 V					274877906944 bit	2.7 V					NAND TYPE		2.7
THGBMAG7B2JBAAM	Toshiba	FLASH CARD	INDUSTRIAL	169		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL				17179869184 words				8					85 Cel		16GX8	16G	-40 Cel				BOTTOM		R-PBGA-B169	3.6 V					137438953472 bit	2.7 V					NAND TYPE
THGBM1G7D4EBAI2	Toshiba	FLASH	OTHER	169	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		4294967296 words	3.3			32	GRID ARRAY, LOW PROFILE, FINE PITCH			.5 mm	85 Cel		4GX32	4G	-25 Cel				BOTTOM		R-PBGA-B169	3.6 V	1.4 mm		14 mm	Not Qualified	137438953472 bit	2.7 V					MLC NAND TYPE	18 mm	3.3
THGBM5G9B8JBAIE	Toshiba	FLASH CARD	OTHER	169		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL				68719476736 words				8					85 Cel		64GX8	64G	-25 Cel				BOTTOM		R-PBGA-B169	3.6 V					549755813888 bit	2.7 V					NAND TYPE		2.7
THGBM1G4D1EBAI7	Toshiba	FLASH	OTHER	169	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		1073741824 words	3.3			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.5 mm	85 Cel		1GX16	1G	-25 Cel		TIN SILVER COPPER		BOTTOM		R-PBGA-B169	3.6 V	1.3 mm		12 mm	Not Qualified	17179869184 bit	2.7 V		e1			MLC NAND TYPE	16 mm	3.3
KLMAG4FE3B-A001	Samsung	FLASH CARD	OTHER	169	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		17179869184 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel		16GX8	16G	-25 Cel				BOTTOM		R-PBGA-B169	3.6 V	1 mm	52 MHz	12 mm		137438953472 bit	2.7 V	1.8V NOMINAL SUPPLY IS ALSO AVAILABLE					16 mm	3.3
NAND16GAH0PZA5E	Micron Technology	FLASH	OTHER	169	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		2147483648 words	3.3			8	GRID ARRAY, LOW PROFILE, FINE PITCH			.5 mm	85 Cel		2GX8	2G	-25 Cel		Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM		R-PBGA-B169	3.465 V	1.4 mm		12 mm	Not Qualified	17179869184 bit	3.135 V		e1	30	245		16 mm	3.3
MTFC16GKQDI-IT	Micron Technology	FLASH CARD	INDUSTRIAL	169	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		17179869184 words	3			8	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel		16GX8	16G	-40 Cel				BOTTOM		R-PBGA-B169	3.6 V	1.2 mm	52 MHz	12 mm		137438953472 bit	2.7 V	IT ALSO REQUIRES 1.65V TO 1.95V, MMC DEVICE		30	260	MLC NAND TYPE	16 mm	3
MTFC32GJDED-3MWT	Micron Technology	FLASH CARD	OTHER	169	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		34359738368 words	3.3	NO		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA169,14X28,20		.5 mm	85 Cel		32GX8	32G	-25 Cel	NO	TIN SILVER COPPER		BOTTOM		R-PBGA-B169	3.6 V	1 mm	52 MHz	14 mm		274877906944 bit	2.7 V					MLC NAND TYPE	18 mm	3.3	NO
MTFC32GJWEF-4MAITZ	Micron Technology	FLASH CARD	INDUSTRIAL	169	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		34359738368 words				8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA169,14X14,20		.5 mm	85 Cel		32GX8	32G	-40 Cel				BOTTOM		R-PBGA-B169	3.6 V	1.364 mm	52 MHz	14 mm		274877906944 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NAND TYPE	18 mm
MTFC32GJXED-WT	Micron Technology	Embedded MMC		169	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		SYNCHRONOUS	80 mA	34359738368 words	1.8			8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA169,14X28,20		.5 mm	85 Cel	OPEN-DRAIN	32GX8	32G	-25 Cel				BOTTOM	HARDWARE	R-PBGA-B169	1.95 V	1.4 mm	52 MHz	14 mm		274877906944 bit	1.65 V					NAND TYPE	18 mm	1.8
MTFC32GLXDI-WT	Micron Technology	Embedded MMC		169	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		SYNCHRONOUS	80 mA	34359738368 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA169,14X28,20		.5 mm	85 Cel	OPEN-DRAIN	32GX8	32G	-25 Cel				BOTTOM	HARDWARE	R-PBGA-B169	1.95 V	1.2 mm	52 MHz	12 mm		274877906944 bit	1.65 V					NAND TYPE	16 mm	1.8
MTFC64GJXEF-WT	Micron Technology	Embedded MMC		169	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		SYNCHRONOUS	80 mA	68719476736 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA169,14X28,20		.5 mm	85 Cel	OPEN-DRAIN	64GX8	64G	-25 Cel				BOTTOM	HARDWARE	R-PBGA-B169	1.95 V	1.2 mm	52 MHz	14 mm		549755813888 bit	1.65 V					NAND TYPE	18 mm	1.8
MTFC16GLXDV-WT	Micron Technology	Embedded MMC		169	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		SYNCHRONOUS	80 mA	17179869184 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA169,14X28,20		.5 mm	85 Cel	OPEN-DRAIN	16GX8	16G	-25 Cel				BOTTOM	HARDWARE	R-PBGA-B169	1.95 V	1 mm	52 MHz	12 mm		137438953472 bit	1.65 V					NAND TYPE	16 mm	1.8
NAND64GAH0PZA5E	Micron Technology	FLASH	OTHER	169	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		8589934592 words	3.3			8	GRID ARRAY, LOW PROFILE, FINE PITCH			.5 mm	85 Cel		8GX8	8G	-25 Cel		Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM		R-PBGA-B169	3.465 V	1.4 mm		12 mm	Not Qualified	68719476736 bit	3.135 V		e1	30	245		16 mm	3.3
NAND16GAH0PZA5F	Micron Technology	FLASH	OTHER	169	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		2147483648 words	3.3			8	GRID ARRAY, LOW PROFILE, FINE PITCH			.5 mm	85 Cel		2GX8	2G	-25 Cel		Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM		R-PBGA-B169	3.465 V	1.4 mm		12 mm	Not Qualified	17179869184 bit	3.135 V		e1	30	245		16 mm	3.3
MTFC32GJGEF-AITZ	Micron Technology	FLASH CARD	INDUSTRIAL	169	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		34359738368 words				8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA169,14X14,20		.5 mm	85 Cel		32GX8	32G	-40 Cel				BOTTOM		R-PBGA-B169	3.6 V	1.364 mm	52 MHz	14 mm		274877906944 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NAND TYPE	18 mm
NAND32GAH0PZA5E	Micron Technology	FLASH	OTHER	169	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		4294967296 words	3.3			8	GRID ARRAY, LOW PROFILE, FINE PITCH			.5 mm	85 Cel		4GX8	4G	-25 Cel		Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM		R-PBGA-B169	3.465 V	1.4 mm		12 mm	Not Qualified	34359738368 bit	3.135 V		e1	30	245		16 mm	3.3
MTFC64GJDDN-3MWT	Micron Technology	FLASH CARD	OTHER	169	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		68719476736 words	3.3	NO		8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA169,14X28,20		.5 mm	85 Cel		64GX8	64G	-25 Cel	NO	TIN SILVER COPPER		BOTTOM		R-PBGA-B169	3.6 V	1.4 mm	52 MHz	14 mm		549755813888 bit	2.7 V					MLC NAND TYPE	18 mm	3.3	NO
MTFC16GJVEC-4MIT	Micron Technology	FLASH CARD	INDUSTRIAL	169	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL									GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm							TIN SILVER COPPER		BOTTOM		R-PBGA-B169		.8 mm		14 mm					e1				18 mm	3.3
NAND64GAH0PZA5F	Micron Technology	FLASH	OTHER	169	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		8589934592 words	3.3			8	GRID ARRAY, LOW PROFILE, FINE PITCH			.5 mm	85 Cel		8GX8	8G	-25 Cel		Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM		R-PBGA-B169	3.465 V	1.4 mm		12 mm	Not Qualified	68719476736 bit	3.135 V		e1	30	245		16 mm	3.3
MTFC64GAJAEDN-AIT	Micron Technology	FLASH CARD	INDUSTRIAL	169	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		68719476736 words		NO		8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA169,14X28,20		.5 mm	85 Cel		64GX8	64G	-40 Cel	NO		YES	BOTTOM		R-PBGA-B169	3.6 V	1.4 mm	52 MHz	14 mm		549755813888 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NAND TYPE	18 mm	2.7	NO
NAND32GAH0PZA5F	Micron Technology	FLASH	OTHER	169	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		4294967296 words	3.3			8	GRID ARRAY, LOW PROFILE, FINE PITCH			.5 mm	85 Cel		4GX8	4G	-25 Cel		Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM		R-PBGA-B169	3.465 V	1.4 mm		12 mm	Not Qualified	34359738368 bit	3.135 V		e1	30	245		16 mm	3.3

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.