Toshiba Flash Memory 776

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Width	Qualification	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
TC58BYG1S3HBAI6	Toshiba	FLASH	INDUSTRIAL	67	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			268435456 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.8 mm	85 Cel		256MX8	256M	-40 Cel					BOTTOM	R-PBGA-B67	1.95 V	1 mm		6.5 mm			2147483648 bit	1.7 V								8 mm			1.8
TC58FVM7B5BXG65	Toshiba	FLASH	INDUSTRIAL	80	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	8388608 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA80,8X12,32		Flash Memories	.8 mm	85 Cel		8MX16	8M	-40 Cel	8, 255	YES		YES	BOTTOM	R-PBGA-B80	3.6 V	1.2 mm		8 mm	Not Qualified	BOTTOM	134217728 bit	2.7 V		8		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00001 Amp	10 mm	YES	65 ns	3	YES
TC58C128AFTI	Toshiba	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K	45 mA	16777216 words		NO	1.8/3.3,3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories	.5 mm	85 Cel		16MX8	16M	-40 Cel	1K	NO			DUAL	R-PDSO-G48					Not Qualified		134217728 bit			512					.000006 Amp		YES	111 ns		NO
THGBM5G5A1JBAIT	Toshiba	FLASH CARD	OTHER	153		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL					4294967296 words				8						85 Cel		4GX8	4G	-25 Cel					BOTTOM	R-PBGA-B153	3.6 V						34359738368 bit	2.7 V						NAND TYPE					2.7
TC58F010FT-10	Toshiba	FLASH	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			131072 words	5			8	SMALL OUTLINE, THIN PROFILE				.5 mm	70 Cel	3-STATE	128KX8	128K	0 Cel			TIN LEAD		DUAL	R-PDSO-G32	5.25 V	1.2 mm		7.9 mm	Not Qualified		1048576 bit	4.75 V	BULK ERASE; 10K ERASE/WRITE CYCLES MIN.		e0			NOR TYPE		18.4 mm		100 ns	12
TC58NS256DC	Toshiba	FLASH CARD	COMMERCIAL	22	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS			33554432 words	3.3			8	UNCASED CHIP					55 Cel		32MX8	32M	0 Cel			TIN LEAD		UPPER	R-XUUC-N22	3.6 V	.84 mm		37 mm	Not Qualified		268435456 bit	3 V			e0					45 mm			3.3
TC58FVM5B3ATG65	Toshiba	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8K,64K	70 mA	2097152 words	3	YES		16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8		.5 mm	85 Cel	3-STATE	2MX16	2M	-40 Cel	8,63	YES		YES	DUAL	R-PDSO-G48	3.6 V	1.2 mm	100000 Write/Erase Cycles	12 mm		BOTTOM	33554432 bit	2.3 V						NOR TYPE	.00001 Amp	18.4 mm	YES	65 ns	3	YES
TC58NYM9S3ETAI0	Toshiba	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	ASYNCHRONOUS			67108864 words	1.8			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.5 mm	85 Cel		64MX8	64M	-40 Cel					DUAL	R-PDSO-G48	1.95 V	1.2 mm					536870912 bit	1.7 V								18.4 mm			1.8
TC58NYG2S3ETAI0	Toshiba	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	ASYNCHRONOUS			536870912 words	1.8			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.5 mm	85 Cel		512MX8	512M	-40 Cel					DUAL	R-PDSO-G48	1.95 V	1.2 mm					4294967296 bit	1.7 V								18.4 mm			1.8
TC58NYG1S3EBAI4	Toshiba	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	128K	30 mA	268435456 words	1.8	NO	1.8	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories	.8 mm	85 Cel		256MX8	256M	-40 Cel	2K	YES		YES	BOTTOM	R-PBGA-B63	1.95 V	1 mm		9 mm	Not Qualified		2147483648 bit	1.7 V		2K					.00005 Amp	11 mm		25 ns	1.8	NO
TC58F1000F-15(TP2)	Toshiba	FLASH	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			131072 words	5			8	SMALL OUTLINE				1.27 mm	70 Cel	3-STATE	128KX8	128K	0 Cel			TIN LEAD		DUAL	R-PDSO-G32	5.5 V	2.8 mm		10.7 mm	Not Qualified		1048576 bit	4.5 V			e0			NOR TYPE		20.6 mm		150 ns	12
TC58FVB160FT-10	Toshiba	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	40 mA	1048576 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel		1MX16	1M	-40 Cel	1,2,1,31	YES		YES	DUAL	R-PDSO-G48	3.6 V	1.2 mm		12 mm	Not Qualified	BOTTOM	16777216 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp	18.4 mm		100 ns	3	YES
TC58FVT016FT-12	Toshiba	FLASH	INDUSTRIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	40 mA	2097152 words	3	YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories	.5 mm	85 Cel		2MX8	2M	-40 Cel	1,2,1,31	YES	Tin/Lead (Sn/Pb)	YES	DUAL	R-PDSO-G40	3.6 V	1.2 mm		10 mm	Not Qualified	TOP	16777216 bit	2.7 V			e0			NOR TYPE	.00001 Amp	18.4 mm		120 ns	3	YES
TC58FVB641XB-10	Toshiba	FLASH	INDUSTRIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	8K,64K	45 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA63,8X12,32	8	Flash Memories	.8 mm	85 Cel		4MX16	4M	-40 Cel	8,127	YES		YES	BOTTOM	R-PBGA-B63	3.6 V	1.2 mm		9 mm	Not Qualified	BOTTOM	67108864 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00001 Amp	11 mm	YES	100 ns	3	YES
THGBM9G8T4KBAIR	Toshiba	FLASH CARD	OTHER	153		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL					34359738368 words				8						85 Cel		32GX8	32G	-25 Cel					BOTTOM	R-PBGA-B153	3.6 V						274877906944 bit	2.7 V						MLC NAND TYPE					2.7
TC58F4000F-12	Toshiba	FLASH	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	5			8	SMALL OUTLINE				1.27 mm	70 Cel	3-STATE	512KX8	512K	0 Cel			TIN LEAD		DUAL	R-PDSO-G32	5.25 V	2.8 mm		10.7 mm	Not Qualified		4194304 bit	4.75 V	BULK ERASE; 10K ERASE/WRITE CYCLES MIN.		e0			NOR TYPE		20.6 mm		120 ns	12
TC58NVG2S0HBAI6	Toshiba	FLASH	INDUSTRIAL	67	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			536870912 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.8 mm	85 Cel		512MX8	512M	-40 Cel					BOTTOM	R-PBGA-B67	3.6 V	1 mm		6.5 mm			4294967296 bit	2.7 V						SLC NAND TYPE		8 mm			3.3
TC58F400FI-10	Toshiba	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	50 mA	524288 words	5	YES	5	8	SMALL OUTLINE	SOP44,.63	8	Flash Memories	1.27 mm	85 Cel		512KX8	512K	-40 Cel	1,2,1,7	YES	Tin/Lead (Sn/Pb)	YES	DUAL	R-PDSO-G44	5.5 V	3.1 mm	100000 Write/Erase Cycles	12.6 mm	Not Qualified	BOTTOM	4194304 bit	4.5 V	USER CONFIGURABLE AS 256K X 16		e0			NOR TYPE	.0001 Amp	28.2 mm		100 ns	5	YES
TC58FBT016FT-10	Toshiba
TC58FVM5T2AXG65	Toshiba	FLASH	INDUSTRIAL	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	8K,64K	70 mA	2097152 words	3	YES		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA60,8X12,32	8		.8 mm	85 Cel	3-STATE	2MX16	2M	-40 Cel	8,63	YES		YES	BOTTOM	R-PBGA-B56	3.6 V	1.2 mm	100000 Write/Erase Cycles	7 mm		TOP	33554432 bit	2.3 V						NOR TYPE	.00001 Amp	10 mm	YES	65 ns	3	YES
TC58NVG1S3HTAI0	Toshiba	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			268435456 words	3.3			8	SMALL OUTLINE, THIN PROFILE				.5 mm	85 Cel		256MX8	256M	-40 Cel					DUAL	R-PDSO-G48	3.6 V	1.2 mm		12 mm			2147483648 bit	2.7 V				10	260	SLC NAND TYPE		18.4 mm			3.3
TC58F4000F-15	Toshiba	FLASH	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	5			8	SMALL OUTLINE				1.27 mm	70 Cel	3-STATE	512KX8	512K	0 Cel			TIN LEAD		DUAL	R-PDSO-G32	5.25 V	2.8 mm		10.7 mm	Not Qualified		4194304 bit	4.75 V	BULK ERASE; 10K ERASE/WRITE CYCLES MIN.		e0			NOR TYPE		20.6 mm		150 ns	12
TC58FYM5B2AXB70	Toshiba	FLASH	INDUSTRIAL	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	8K,64K	80 mA	2097152 words	1.8	YES	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA56,8X12,32	8	Flash Memories	.8 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES	Tin/Lead (Sn/Pb)	YES	BOTTOM	R-PBGA-B56	1.95 V	1.2 mm		7 mm	Not Qualified	BOTTOM	33554432 bit	1.7 V		8/16	e0			NOR TYPE	.000025 Amp	10 mm	YES	80 ns	3	YES
TC58FVB800FT-12	Toshiba	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	40 mA	1048576 words		YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel	3-STATE	1MX8	1M	-40 Cel	1,2,1,15	YES	Tin/Lead (Sn/Pb)	YES	DUAL	R-PDSO-G48	3.6 V	1.2 mm	100000 Write/Erase Cycles	12 mm	Not Qualified	BOTTOM	8388608 bit	2.7 V			e0			NOR TYPE	.00001 Amp	18.4 mm		120 ns	3	YES
TC58FVM6B5BTG65	Toshiba	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	4194304 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories	.5 mm	85 Cel		4MX16	4M	-40 Cel	8,127	YES		YES	DUAL	R-PDSO-G48	3.6 V	1.2 mm		12 mm	Not Qualified	BOTTOM	67108864 bit	2.7 V		8		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00001 Amp	18.4 mm	YES	65 ns	3	YES
TC58FVB008FT-85	Toshiba	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	40 mA	1048576 words	3.3	YES	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories	.5 mm	70 Cel	3-STATE	1MX8	1M	0 Cel	1,2,1,15	YES	Tin/Lead (Sn/Pb)	YES	DUAL	R-PDSO-G40	3.6 V	1.2 mm	100000 Write/Erase Cycles	10 mm	Not Qualified	BOTTOM	8388608 bit	3 V			e0			NOR TYPE	.00001 Amp	18.4 mm		85 ns	3	YES
TC58BYG2S0HBAI6	Toshiba	FLASH	INDUSTRIAL	67	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			536870912 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.8 mm	85 Cel		512MX8	512M	-40 Cel					BOTTOM	R-PBGA-B67	1.95 V	1 mm		6.5 mm			4294967296 bit	1.7 V								8 mm			1.8
TC58F1000F-20(TP2)	Toshiba	FLASH	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			131072 words	5			8	SMALL OUTLINE				1.27 mm	70 Cel	3-STATE	128KX8	128K	0 Cel			TIN LEAD		DUAL	R-PDSO-G32	5.5 V	2.8 mm		10.7 mm	Not Qualified		1048576 bit	4.5 V			e0			NOR TYPE		20.6 mm		200 ns	12
TC58TEG5DCJTA00	Toshiba	FLASH	COMMERCIAL	48	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			4294967296 words	3.3			8	SMALL OUTLINE					70 Cel		4GX8	4G	0 Cel					DUAL	R-PDSO-G48	3.6 V						34359738368 bit	2.7 V											3.3
TC58FVT016FT-85	Toshiba	FLASH	INDUSTRIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	40 mA	2097152 words	3.3	YES	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories	.5 mm	85 Cel		2MX8	2M	-40 Cel	1,2,1,31	YES		YES	DUAL	R-PDSO-G40	3.6 V	1.2 mm		10 mm	Not Qualified	TOP	16777216 bit	3 V						NOR TYPE	.00001 Amp	18.4 mm		85 ns	3	YES
THGBMBG5D1KBAIL	Toshiba	FLASH CARD	OTHER	153		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL					4294967296 words				8						85 Cel		4GX8	4G	-25 Cel					BOTTOM	R-PBGA-B153	3.6 V						34359738368 bit	2.7 V						MLC NAND TYPE					2.7
TC58FVB008FT-10	Toshiba	FLASH	INDUSTRIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	40 mA	1048576 words		YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories	.5 mm	85 Cel	3-STATE	1MX8	1M	-40 Cel	1,2,1,15	YES	Tin/Lead (Sn/Pb)	YES	DUAL	R-PDSO-G40	3.6 V	1.2 mm	100000 Write/Erase Cycles	10 mm	Not Qualified	BOTTOM	8388608 bit	2.7 V			e0			NOR TYPE	.00001 Amp	18.4 mm		100 ns	3	YES
TC58NYG1S3HBAI4	Toshiba	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			268435456 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.8 mm	85 Cel		256MX8	256M	-40 Cel					BOTTOM	R-PBGA-B63	1.95 V	1 mm		9 mm			2147483648 bit	1.7 V						SLC NAND TYPE		11 mm			1.8
THGBM1G3D1EBAI8	Toshiba	FLASH	OTHER	153	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			1073741824 words	3.3			8	GRID ARRAY, THIN PROFILE, FINE PITCH				.5 mm	85 Cel		1GX8	1G	-25 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B153	3.6 V	1.2 mm		11.5 mm	Not Qualified		8589934592 bit	2.7 V			e1			MLC NAND TYPE		13 mm			3.3
TC58FYM6B2AFT70	Toshiba	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8K,64K	80 mA	4194304 words	1.8	YES	1.8	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel		4MX16	4M	-40 Cel	8,127	YES	TIN LEAD	YES	DUAL	R-PDSO-G48	1.95 V	1.2 mm		12 mm	Not Qualified	BOTTOM	67108864 bit	1.7 V		8/16	e0			NOR TYPE	.000025 Amp	18.4 mm	YES	80 ns	3	YES
THGBM5G9B8JBAIE	Toshiba	FLASH CARD	OTHER	169		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL					68719476736 words				8						85 Cel		64GX8	64G	-25 Cel					BOTTOM	R-PBGA-B169	3.6 V						549755813888 bit	2.7 V						NAND TYPE					2.7
TC58FYM5T2AXB70	Toshiba	FLASH	INDUSTRIAL	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	8K,64K	80 mA	2097152 words	1.8	YES	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA56,8X12,32	8	Flash Memories	.8 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES	Tin/Lead (Sn/Pb)	YES	BOTTOM	R-PBGA-B56	1.95 V	1.2 mm		7 mm	Not Qualified	TOP	33554432 bit	1.7 V		8/16	e0			NOR TYPE	.000025 Amp	10 mm	YES	80 ns	3	YES
TC58BVG2S0HBAI6	Toshiba	FLASH	INDUSTRIAL	67	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			536870912 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.8 mm	85 Cel		512MX8	512M	-40 Cel					BOTTOM	R-PBGA-B67	3.6 V	1 mm		6.5 mm			4294967296 bit	2.7 V								8 mm			3.3
TC58C256AXB	Toshiba	FLASH	INDUSTRIAL	69	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K	45 mA	33554432 words		NO	3/3.3	8	GRID ARRAY, FINE PITCH	BGA69,10X12,32		Flash Memories	.8 mm	85 Cel		32MX8	32M	-40 Cel	2K	NO			BOTTOM	R-PBGA-B69					Not Qualified		268435456 bit			512					.00004 Amp		YES	103 ns		NO
TC58FYM5B2AFT70	Toshiba	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8K,64K	80 mA	2097152 words	1.8	YES	1.8	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES	TIN LEAD	YES	DUAL	R-PDSO-G48	1.95 V	1.2 mm		12 mm	Not Qualified	BOTTOM	33554432 bit	1.7 V		8/16	e0			NOR TYPE	.000025 Amp	18.4 mm	YES	80 ns	3	YES
TC58128FT(EL)	Toshiba	FLASH	COMMERCIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K	30 mA	16777216 words	3.3	NO	3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories	.5 mm	70 Cel		16MX8	16M	0 Cel	1K	YES		YES	DUAL	R-PDSO-G48					Not Qualified		134217728 bit			512					.0001 Amp			35 ns		NO
THGBM1G4D1EBAI7	Toshiba	FLASH	OTHER	169	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			1073741824 words	3.3			16	GRID ARRAY, LOW PROFILE, FINE PITCH				.5 mm	85 Cel		1GX16	1G	-25 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B169	3.6 V	1.3 mm		12 mm	Not Qualified		17179869184 bit	2.7 V			e1			MLC NAND TYPE		16 mm			3.3
TC58FVM6B2AFT65	Toshiba	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8K,64K	70 mA	4194304 words	3	YES	2.5/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel		4MX16	4M	-40 Cel	8,127	YES		YES	DUAL	R-PDSO-G48	3.6 V	1.2 mm		12 mm	Not Qualified	BOTTOM	67108864 bit	2.3 V		8/16		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00001 Amp	18.4 mm	YES	75 ns	3	YES
TC58FVM5B3AXG65	Toshiba	FLASH	INDUSTRIAL	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	8K,64K	70 mA	2097152 words	3	YES		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA60,8X12,32	8		.8 mm	85 Cel	3-STATE	2MX16	2M	-40 Cel	8,63	YES		YES	BOTTOM	R-PBGA-B56	3.6 V	1.2 mm	100000 Write/Erase Cycles	7 mm		BOTTOM	33554432 bit	2.3 V						NOR TYPE	.00001 Amp	10 mm	YES	65 ns	3	YES
TC58BVG1S3HBAI6	Toshiba	FLASH	INDUSTRIAL	67	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			268435456 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.8 mm	85 Cel		256MX8	256M	-40 Cel					BOTTOM	R-PBGA-B67	3.6 V	1 mm		6.5 mm			2147483648 bit	2.7 V								8 mm			3.3
TC58FVT641XB-70	Toshiba	FLASH	INDUSTRIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	8K,64K	45 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA63,8X12,32	8	Flash Memories	.8 mm	85 Cel		4MX16	4M	-40 Cel	8,127	YES		YES	BOTTOM	R-PBGA-B63	3.6 V	1.2 mm		9 mm	Not Qualified	TOP	67108864 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00001 Amp	11 mm	YES	80 ns	3	YES
TC58FVB641XB-70	Toshiba	FLASH	INDUSTRIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	8K,64K	45 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA63,8X12,32	8	Flash Memories	.8 mm	85 Cel		4MX16	4M	-40 Cel	8,127	YES		YES	BOTTOM	R-PBGA-B63	3.6 V	1.2 mm		9 mm	Not Qualified	BOTTOM	67108864 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00001 Amp	11 mm	YES	80 ns	3	YES
TC58FVT641XB-10	Toshiba	FLASH	INDUSTRIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	8K,64K	45 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA63,8X12,32	8	Flash Memories	.8 mm	85 Cel		4MX16	4M	-40 Cel	8,127	YES		YES	BOTTOM	R-PBGA-B63	3.6 V	1.2 mm		9 mm	Not Qualified	TOP	67108864 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00001 Amp	11 mm	YES	100 ns	3	YES

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.