Toshiba Flash Memory 776

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Width	Qualification	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
TC58FVB004FT-85	Toshiba	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	40 mA	524288 words	3.3	YES	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories	.5 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	1,2,1,7	YES	Tin/Lead (Sn/Pb)	YES	DUAL	R-PDSO-G40	3.6 V	1.2 mm	100000 Write/Erase Cycles	10 mm	Not Qualified	BOTTOM	4194304 bit	3 V			e0			NOR TYPE	.00001 Amp	18.4 mm		85 ns	3	YES
TC58FVB016FT-12	Toshiba	FLASH	INDUSTRIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	40 mA	2097152 words	3	YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories	.5 mm	85 Cel		2MX8	2M	-40 Cel	1,2,1,31	YES	Tin/Lead (Sn/Pb)	YES	DUAL	R-PDSO-G40	3.6 V	1.2 mm		10 mm	Not Qualified	BOTTOM	16777216 bit	2.7 V			e0			NOR TYPE	.00001 Amp	18.4 mm		120 ns	3	YES
TC58FVT160AXB-70	Toshiba	FLASH	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	1048576 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	85 Cel		1MX16	1M	-40 Cel	1,2,1,31	YES		YES	BOTTOM	R-PBGA-B48	3.6 V	1.2 mm		6 mm	Not Qualified	TOP	16777216 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp	8 mm	YES	80 ns	3	YES
TC58F1000F-20	Toshiba	FLASH	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	4K	30 mA	131072 words	5	NO	5	8	SMALL OUTLINE	SOP32,.5		Flash Memories	1.27 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	32	YES	TIN LEAD		DUAL	R-PDSO-G32	5.5 V	2.8 mm		10.7 mm	Not Qualified		1048576 bit	4.5 V			e0			NOR TYPE	.0001 Amp	20.6 mm		200 ns	12	NO
TC58FVB400F-85	Toshiba	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	40 mA	524288 words	3.3	YES	3/3.3	8	SMALL OUTLINE	SOP44,.63	8	Flash Memories	1.27 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	1,2,1,7	YES		YES	DUAL	R-PDSO-G44	3.6 V	3.1 mm	100000 Write/Erase Cycles	12.6 mm	Not Qualified	BOTTOM	4194304 bit	3 V						NOR TYPE	.00001 Amp	28.2 mm		85 ns	3	YES
THGBMHG8C4LBAIR	Toshiba	FLASH	OTHER	169	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			34359738368 words				8	GRID ARRAY					85 Cel		32GX8	32G	-25 Cel					BOTTOM	R-PBGA-B169	3.6 V						274877906944 bit	2.7 V											2.7
TC58F1001F-15	Toshiba	FLASH	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		4K	30 mA	131072 words	5	NO	5	8	SMALL OUTLINE	SOP32,.5		Flash Memories	1.27 mm	70 Cel		128KX8	128K	0 Cel	32	YES	Tin/Lead (Sn/Pb)		DUAL	R-PDSO-G32					Not Qualified		1048576 bit				e0			NOR TYPE	.0001 Amp			150 ns		NO
THGBM5G7B2JBAIM	Toshiba	FLASH CARD	OTHER	169		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL					17179869184 words				8						85 Cel		16GX8	16G	-25 Cel					BOTTOM	R-PBGA-B169	3.6 V						137438953472 bit	2.7 V						NAND TYPE					2.7
TC58F1000J-20	Toshiba	FLASH	COMMERCIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	4K	30 mA	131072 words	5	NO	5	8	SMALL OUTLINE	SOJ32,.44		Flash Memories	1.27 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	32	YES	TIN LEAD		DUAL	R-PDSO-J32	5.5 V	3.6 mm		10.2 mm	Not Qualified		1048576 bit	4.5 V			e0			NOR TYPE	.0001 Amp	21 mm		200 ns	12	NO
TC58FVT160FT-85	Toshiba	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	40 mA	1048576 words	3.3	YES	3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel		1MX16	1M	-40 Cel	1,2,1,31	YES		YES	DUAL	R-PDSO-G48	3.6 V	1.2 mm		12 mm	Not Qualified	TOP	16777216 bit	3 V	USER CONFIGURABLE 1M X 16					NOR TYPE	.000005 Amp	18.4 mm		85 ns	3	YES
TC58FVT800FT-85	Toshiba	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words				8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.5 mm	85 Cel		1MX8	1M	-40 Cel			TIN LEAD		DUAL	R-PDSO-G48	3.6 V	1.2 mm		12 mm	Not Qualified		8388608 bit	3 V			e0					18.4 mm		85 ns	3
TC58F401FT-10	Toshiba	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	5			8	SMALL OUTLINE, THIN PROFILE				.5 mm	70 Cel		512KX8	512K	0 Cel			Tin/Lead (Sn/Pb)		DUAL	R-PDSO-G48	5.5 V	1.2 mm		12 mm	Not Qualified	TOP	4194304 bit	4.5 V	100000 ERASE/PROGRAM CYCLES; BLOCK ERASE; ALSO CONFIGURABLE AS 256K X 16		e0			NOR TYPE		18.4 mm		100 ns	5
TC58FVB321XB-10	Toshiba	FLASH	INDUSTRIAL	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	8K,64K	45 mA	2097152 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA56,8X12,32	8	Flash Memories	.8 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES		YES	BOTTOM	R-PBGA-B56	3.6 V	1.2 mm		7 mm	Not Qualified	BOTTOM	33554432 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00001 Amp	10 mm	YES	100 ns	3	YES
TC5816AFT	Toshiba	FLASH	COMMERCIAL	40	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS			2097152 words	5			8	SMALL OUTLINE, THIN PROFILE				.8 mm	70 Cel		2MX8	2M	0 Cel			TIN LEAD		DUAL	R-PDSO-G40	5.5 V	1.2 mm		10.16 mm	Not Qualified		16777216 bit	4.5 V			e0					18.41 mm		50 ns	5
TC58NYG0S3EBAI4	Toshiba	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	ASYNCHRONOUS	128K	30 mA	134217728 words	1.8	NO	1.8	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories	.8 mm	85 Cel		128MX8	128M	-40 Cel	1K	YES		YES	BOTTOM	R-PBGA-B63	1.95 V	1 mm		9 mm	Not Qualified		1073741824 bit	1.7 V		2K					.00005 Amp	11 mm		25 ns	1.8	NO
TC58F1000P-15	Toshiba	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	4K	30 mA	131072 words	5	NO	5	8	IN-LINE	DIP32,.6		Flash Memories	2.54 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	32	YES	TIN LEAD		DUAL	R-PDIP-T32	5.5 V	4.8 mm		15.24 mm	Not Qualified		1048576 bit	4.5 V			e0			NOR TYPE	.0001 Amp	42 mm		150 ns	12	NO
TC58FVB800F-85	Toshiba	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	40 mA	1048576 words	3.3	YES	3/3.3	8	SMALL OUTLINE	SOP44,.63	8	Flash Memories	1.27 mm	85 Cel	3-STATE	1MX8	1M	-40 Cel	1,2,1,15	YES	Tin/Lead (Sn/Pb)	YES	DUAL	R-PDSO-G44	3.6 V	3.1 mm	100000 Write/Erase Cycles	12.6 mm	Not Qualified	BOTTOM	8388608 bit	3 V			e0			NOR TYPE	.00001 Amp	28.2 mm		85 ns	3	YES
TC58FVB004FT-10	Toshiba	FLASH	INDUSTRIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	40 mA	4194304 words	5	YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories	.5 mm	85 Cel	3-STATE	4MX8	4M	-40 Cel	1,2,1,7	YES	Tin/Lead (Sn/Pb)	YES	DUAL	R-PDSO-G40	5.5 V	1.2 mm	100000 Write/Erase Cycles	10 mm	Not Qualified	BOTTOM	33554432 bit	4.5 V			e0			NOR TYPE	.00001 Amp	18.4 mm		35 ns	3	YES
TC58F010TR-12	Toshiba	FLASH	COMMERCIAL	32	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			131072 words	5			8	SMALL OUTLINE, THIN PROFILE				.5 mm	70 Cel	3-STATE	128KX8	128K	0 Cel			TIN LEAD		DUAL	R-PDSO-G32	5.25 V	1.2 mm		7.9 mm	Not Qualified		1048576 bit	4.75 V	BULK ERASE; 10K ERASE/WRITE CYCLES MIN.		e0			NOR TYPE		18.4 mm		120 ns	12
TC58FVM7T5BXG65	Toshiba	FLASH	INDUSTRIAL	80	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	8388608 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA80,8X12,32		Flash Memories	.8 mm	85 Cel		8MX16	8M	-40 Cel	8, 255	YES		YES	BOTTOM	R-PBGA-B80	3.6 V	1.2 mm		8 mm	Not Qualified	TOP	134217728 bit	2.7 V		8		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00001 Amp	10 mm	YES	65 ns	3	YES
TC58BVG2S0HTA00	Toshiba	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			536870912 words	3.3			8	SMALL OUTLINE, THIN PROFILE				.5 mm	70 Cel		512MX8	512M	0 Cel					DUAL	R-PDSO-G48	3.6 V	1.2 mm		12 mm			4294967296 bit	2.7 V								18.4 mm			3.3
TC58NYG2S0HBAI6	Toshiba	FLASH	INDUSTRIAL	67	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			536870912 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.8 mm	85 Cel		512MX8	512M	-40 Cel					BOTTOM	R-PBGA-B67	1.95 V	1 mm		6.5 mm			4294967296 bit	1.7 V						SLC NAND TYPE		8 mm			1.8
TC58V64FT(EL)	Toshiba	FLASH	COMMERCIAL	40	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		8K	30 mA	8388608 words		NO	3.3,3.3/5	8	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32		Flash Memories	.8 mm	70 Cel		8MX8	8M	0 Cel	1K	YES	Tin/Lead (Sn/Pb)	YES	DUAL	R-PDSO-G40					Not Qualified		67108864 bit			512	e0				.0001 Amp			35 ns		NO
TC58FVT800FT-12	Toshiba	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3			8	SMALL OUTLINE, THIN PROFILE				.5 mm	85 Cel		1MX8	1M	-40 Cel			TIN LEAD		DUAL	R-PDSO-G48	3.6 V	1.2 mm		12 mm	Not Qualified		8388608 bit	2.7 V			e0					18.4 mm		120 ns	3
TC58F400F-10	Toshiba	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	5			8	SMALL OUTLINE				1.27 mm	70 Cel		512KX8	512K	0 Cel			Tin/Lead (Sn/Pb)		DUAL	R-PDSO-G44	5.5 V	3.1 mm		12.6 mm	Not Qualified	BOTTOM	4194304 bit	4.5 V	100000 ERASE/PROGRAM CYCLES; BLOCK ERASE; ALSO CONFIGURABLE AS 256K X 16		e0			NOR TYPE		28.2 mm		100 ns	5
TC58FYB016FT-12	Toshiba	FLASH	INDUSTRIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	40 mA	2097152 words	1.8	YES	1.8/2.7	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories	.5 mm	85 Cel		2MX8	2M	-40 Cel	1,2,1,31	YES	Tin/Lead (Sn/Pb)	YES	DUAL	R-PDSO-G40	2.7 V	1.2 mm		10 mm	Not Qualified	BOTTOM	16777216 bit	1.8 V			e0			NOR TYPE	.00002 Amp	18.4 mm		120 ns	1.8	YES
TC58FVB004FT-12	Toshiba	FLASH	INDUSTRIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	40 mA	4194304 words	5	YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories	.5 mm	85 Cel	3-STATE	4MX8	4M	-40 Cel	1,2,1,7	YES	Tin/Lead (Sn/Pb)	YES	DUAL	R-PDSO-G40	5.5 V	1.2 mm	100000 Write/Erase Cycles	10 mm	Not Qualified	BOTTOM	33554432 bit	4.5 V			e0			NOR TYPE	.00001 Amp	18.4 mm		35 ns	3	YES
TC58FYM7T2AFT70	Toshiba	FLASH	INDUSTRIAL	56	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8K,64K	80 mA	8388608 words	1.8	YES	1.8	16	SMALL OUTLINE, THIN PROFILE	TSSOP56,.8,20	8	Flash Memories	.5 mm	85 Cel		8MX16	8M	-40 Cel	8, 255	YES	TIN LEAD	YES	DUAL	R-PDSO-G56	1.95 V	1.2 mm		14 mm	Not Qualified	TOP	134217728 bit	1.7 V		8/16	e0			NOR TYPE	.000025 Amp	18.4 mm	YES	80 ns	3	YES
TC58FYB016FT-15	Toshiba	FLASH	INDUSTRIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	40 mA	2097152 words	1.8	YES	1.8/2.7	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories	.5 mm	85 Cel		2MX8	2M	-40 Cel	1,2,1,31	YES	Tin/Lead (Sn/Pb)	YES	DUAL	R-PDSO-G40	2.7 V	1.2 mm		10 mm	Not Qualified	BOTTOM	16777216 bit	1.8 V			e0			NOR TYPE	.00002 Amp	18.4 mm		150 ns	1.8	YES
TC58F400FI-90	Toshiba	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	50 mA	524288 words	5	YES	5	8	SMALL OUTLINE	SOP44,.63	8	Flash Memories	1.27 mm	85 Cel		512KX8	512K	-40 Cel	1,2,1,7	YES	Tin/Lead (Sn/Pb)	YES	DUAL	R-PDSO-G44	5.5 V	3.1 mm	100000 Write/Erase Cycles	12.6 mm	Not Qualified	BOTTOM	4194304 bit	4.5 V	USER CONFIGURABLE AS 256K X 16		e0			NOR TYPE	.0001 Amp	28.2 mm		90 ns	5	YES
THGBM5G9A8JBAIG	Toshiba	FLASH CARD	OTHER	153		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL					68719476736 words				8						85 Cel		64GX8	64G	-25 Cel					BOTTOM	R-PBGA-B153	3.6 V						549755813888 bit	2.7 V						NAND TYPE					2.7
THGBM5G7A2JBAIM	Toshiba	FLASH CARD	OTHER	169		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL					17179869184 words				8						85 Cel		16GX8	16G	-25 Cel					BOTTOM	R-PBGA-B169	3.6 V						137438953472 bit	2.7 V											2.7
THGBM7G9T8JBAIG	Toshiba	FLASH CARD	OTHER	153		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL					68719476736 words				8						85 Cel		64GX8	64G	-25 Cel					BOTTOM	R-PBGA-B153	3.6 V						549755813888 bit	2.7 V						NAND TYPE					2.7
TC58FVT016-85	Toshiba	FLASH	INDUSTRIAL	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			2097152 words				8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.5 mm	85 Cel		2MX8	2M	-40 Cel					DUAL	R-PDSO-G40	3.6 V	1.2 mm		10 mm	Not Qualified	TOP	16777216 bit	3 V						NOR TYPE		18.4 mm		85 ns	3
TC58256AFTI(EL)	Toshiba	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K	30 mA	33554432 words		NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories	.5 mm	85 Cel		32MX8	32M	-40 Cel	2K	YES		YES	DUAL	R-PDSO-G48					Not Qualified		268435456 bit			512					.0001 Amp			35 ns		NO
TC58NVG1S3CBAJX	Toshiba
TC58V64BDC	Toshiba	FLASH CARD	COMMERCIAL	22	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	ASYNCHRONOUS			8388608 words	3.3			8	UNCASED CHIP				2.54 mm	55 Cel		8MX8	8M	0 Cel					UPPER	R-XUUC-N22	3.6 V	.84 mm		37 mm	Not Qualified		67108864 bit	3 V								45 mm			3.3
TC58NVG2S0HTA00	Toshiba	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			536870912 words	3.3			8	SMALL OUTLINE, THIN PROFILE				.5 mm	70 Cel		512MX8	512M	0 Cel					DUAL	R-PDSO-G48	3.6 V	1.2 mm		12 mm			4294967296 bit	2.7 V						SLC NAND TYPE		18.4 mm			3.3
TC58F4000P-12	Toshiba	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			524288 words	5			8	IN-LINE				2.54 mm	70 Cel	3-STATE	512KX8	512K	0 Cel			TIN LEAD		DUAL	R-PDIP-T32	5.25 V	4.8 mm		15.24 mm	Not Qualified		4194304 bit	4.75 V	BULK ERASE; 10K ERASE/WRITE CYCLES MIN.		e0			NOR TYPE		42 mm		120 ns	12
TC58FVM5B2AFT65	Toshiba	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8K,64K	70 mA	2097152 words	3	YES	2.5/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES		YES	DUAL	R-PDSO-G48	3.6 V	1.2 mm		12 mm	Not Qualified	BOTTOM	33554432 bit	2.3 V		8/16		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00001 Amp	18.4 mm	YES	75 ns	3	YES
TC58NVM9S3CTA00	Toshiba
TC58F4000P-15	Toshiba	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			524288 words	5			8	IN-LINE				2.54 mm	70 Cel	3-STATE	512KX8	512K	0 Cel			TIN LEAD		DUAL	R-PDIP-T32	5.25 V	4.8 mm		15.24 mm	Not Qualified		4194304 bit	4.75 V	BULK ERASE; 10K ERASE/WRITE CYCLES MIN.		e0			NOR TYPE		42 mm		150 ns	12
TC58FVM6B2AFT70	Toshiba	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		8K,64K	80 mA	4194304 words	1.8	YES	1.8	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel		4MX16	4M	-40 Cel	8,127	YES		YES	DUAL	R-PDSO-G48					Not Qualified	BOTTOM	67108864 bit			8/16				NOR TYPE	.000025 Amp		YES	70 ns		YES
TC58FVT800FT-10	Toshiba	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3			8	SMALL OUTLINE, THIN PROFILE				.5 mm	85 Cel		1MX8	1M	-40 Cel			TIN LEAD		DUAL	R-PDSO-G48	3.6 V	1.2 mm		12 mm	Not Qualified		8388608 bit	2.7 V			e0					18.4 mm		100 ns	3
TC58FVM6T2AXB70	Toshiba	FLASH	INDUSTRIAL	56	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		8K,64K	80 mA	4194304 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA56,8X12,32	8	Flash Memories	.8 mm	85 Cel		4MX16	4M	-40 Cel	8,127	YES		YES	BOTTOM	R-PBGA-B56					Not Qualified	TOP	67108864 bit			8/16				NOR TYPE	.000025 Amp		YES	70 ns		YES
THGBMHG7C2LBAIL	Toshiba	FLASH	OTHER	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			17179869184 words				8	GRID ARRAY					85 Cel		16GX8	16G	-25 Cel					BOTTOM	R-PBGA-B153	3.6 V						137438953472 bit	2.7 V											2.7
TC58F1000F-20(EL)	Toshiba	FLASH	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			131072 words	5			8	SMALL OUTLINE				1.27 mm	70 Cel	3-STATE	128KX8	128K	0 Cel			TIN LEAD		DUAL	R-PDSO-G32	5.5 V	2.8 mm		10.7 mm	Not Qualified		1048576 bit	4.5 V			e0			NOR TYPE		20.6 mm		200 ns	12
THGBM1G6D4EBAI4	Toshiba	FLASH	OTHER	169	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			4294967296 words	3.3			16	GRID ARRAY, LOW PROFILE, FINE PITCH				.5 mm	85 Cel		4GX16	4G	-25 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B169	3.6 V	1.3 mm		12 mm	Not Qualified		68719476736 bit	2.7 V			e1			MLC NAND TYPE		18 mm			3.3

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.