Toshiba Flash Memory 776

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
TC58FVT400F-12	Toshiba	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	40 mA	4194304 words	5	YES	3/3.3	8	SMALL OUTLINE	SOP44,.63	8	Flash Memories	1.27 mm	85 Cel	3-STATE	4MX8	4M	-40 Cel	1,2,1,7	YES	Tin/Lead (Sn/Pb)	YES	DUAL	R-PDSO-G44	5.5 V	3.1 mm	100000 Write/Erase Cycles		12.6 mm	Not Qualified		TOP	33554432 bit	4.5 V			e0			NOR TYPE	.00001 Amp	28.2 mm		35 ns	3	YES
TC58FVM6T2AXB65	Toshiba	FLASH	INDUSTRIAL	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	8K,64K	70 mA	4194304 words	3	YES	2.5/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA56,8X12,32	8	Flash Memories	.8 mm	85 Cel		4MX16	4M	-40 Cel	8,127	YES		YES	BOTTOM	R-PBGA-B56	3.6 V	1.2 mm			7 mm	Not Qualified		TOP	67108864 bit	2.3 V		8/16		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00001 Amp	10 mm	YES	75 ns	3	YES
TC58FVB800F-12	Toshiba	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	40 mA	1048576 words		YES	3/3.3	8	SMALL OUTLINE	SOP44,.63	8	Flash Memories	1.27 mm	85 Cel	3-STATE	1MX8	1M	-40 Cel	1,2,1,15	YES	Tin/Lead (Sn/Pb)	YES	DUAL	R-PDSO-G44	3.6 V	3.1 mm	100000 Write/Erase Cycles		12.6 mm	Not Qualified		BOTTOM	8388608 bit	2.7 V			e0			NOR TYPE	.00001 Amp	28.2 mm		120 ns	3	YES
TC58F4000FT-15	Toshiba	FLASH	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	5			8	SMALL OUTLINE, THIN PROFILE				.5 mm	70 Cel	3-STATE	512KX8	512K	0 Cel			TIN LEAD		DUAL	R-PDSO-G32	5.25 V	1.2 mm			7.9 mm	Not Qualified			4194304 bit	4.75 V	BULK ERASE; 10K ERASE/WRITE CYCLES MIN.		e0			NOR TYPE		18.4 mm		150 ns	12
TC58FVT800F-10	Toshiba	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3			8	SMALL OUTLINE				1.27 mm	85 Cel		1MX8	1M	-40 Cel			TIN LEAD		DUAL	R-PDSO-G44	3.6 V	3.1 mm			12.6 mm	Not Qualified			8388608 bit	2.7 V			e0					28.2 mm		100 ns	3
TC58NVG1S3HBAI4	Toshiba	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			268435456 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.8 mm	85 Cel		256MX8	256M	-40 Cel					BOTTOM	R-PBGA-B63	3.6 V	1 mm			9 mm				2147483648 bit	2.7 V				10	260	SLC NAND TYPE		11 mm			3.3
THGBMAG8A4JBA4R	Toshiba	FLASH CARD	OTHER	153		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL					34359738368 words				8						85 Cel		32GX8	32G	-25 Cel					BOTTOM	R-PBGA-B153	3.6 V								274877906944 bit	2.7 V						NAND TYPE					2.7
TC58F010T-12	Toshiba	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS			131072 words	5			8	CHIP CARRIER					70 Cel	3-STATE	128KX8	128K	0 Cel			TIN LEAD		QUAD	R-PQCC-J32	5.25 V					Not Qualified			1048576 bit	4.75 V	BULK ERASE; 10K ERASE/WRITE CYCLES MIN.		e0			NOR TYPE				120 ns	12
THGBF7T0L8LBATA	Toshiba	FLASH	OTHER	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			137438953472 words				8	GRID ARRAY					85 Cel		128GX8	128G	-25 Cel					BOTTOM	R-PBGA-B153	3.6 V								1099511627776 bit	2.7 V						MLC NAND TYPE					2.7
TC58FVM7T5BTG65	Toshiba	FLASH	INDUSTRIAL	56	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	8388608 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP56,.8,20		Flash Memories	.5 mm	85 Cel		8MX16	8M	-40 Cel	8, 255	YES		YES	DUAL	R-PDSO-G56	3.6 V	1.2 mm			14 mm	Not Qualified		TOP	134217728 bit	2.7 V		8		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00001 Amp	18.4 mm	YES	65 ns	3	YES
TC58NVG3S0FTA00	Toshiba	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1073741824 words	3.3			8	SMALL OUTLINE, THIN PROFILE				.5 mm	70 Cel		1GX8	1G	0 Cel					DUAL	R-PDSO-G48	3.6 V	1.2 mm			12 mm				8589934592 bit	2.7 V								18.4 mm			3.3
TC58FVM7B5BTG65	Toshiba	FLASH	INDUSTRIAL	56	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	8388608 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP56,.8,20		Flash Memories	.5 mm	85 Cel		8MX16	8M	-40 Cel	8, 255	YES		YES	DUAL	R-PDSO-G56	3.6 V	1.2 mm			14 mm	Not Qualified		BOTTOM	134217728 bit	2.7 V		8		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00001 Amp	18.4 mm	YES	65 ns	3	YES
TC58FVB160AXB-70	Toshiba	FLASH	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	1048576 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	85 Cel		1MX16	1M	-40 Cel	1,2,1,31	YES		YES	BOTTOM	R-PBGA-B48	3.6 V	1.2 mm			6 mm	Not Qualified		BOTTOM	16777216 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp	8 mm	YES	80 ns	3	YES
TC58FYM6T2AFT70	Toshiba	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8K,64K	80 mA	4194304 words	1.8	YES	1.8	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel		4MX16	4M	-40 Cel	8,127	YES	TIN LEAD	YES	DUAL	R-PDSO-G48	1.95 V	1.2 mm			12 mm	Not Qualified		TOP	67108864 bit	1.7 V		8/16	e0			NOR TYPE	.000025 Amp	18.4 mm	YES	80 ns	3	YES
TC58FVM6T2ATG65	Toshiba	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		8K,64K	70 mA	4194304 words		YES	2.5/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel		4MX16	4M	-40 Cel	8,127	YES		YES	DUAL	R-PDSO-G48						Not Qualified		TOP	67108864 bit			8/16				NOR TYPE	.00001 Amp		YES	75 ns		YES
TC58FVM5T2ATG65	Toshiba	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8K,64K	70 mA	2097152 words	3	YES		16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8		.5 mm	85 Cel	3-STATE	2MX16	2M	-40 Cel	8,63	YES		YES	DUAL	R-PDSO-G48	3.6 V	1.2 mm	100000 Write/Erase Cycles		12 mm			TOP	33554432 bit	2.3 V						NOR TYPE	.00001 Amp	18.4 mm	YES	65 ns	3	YES
TC58FVT800F-85	Toshiba	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words				8	SMALL OUTLINE				1.27 mm	85 Cel		1MX8	1M	-40 Cel			TIN LEAD		DUAL	R-PDSO-G44	3.6 V	3.1 mm			12.6 mm	Not Qualified			8388608 bit	3 V			e0					28.2 mm		85 ns	3
TC58NS512ADC	Toshiba	FLASH CARD	COMMERCIAL	22		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	UNSPECIFIED	SERIAL	ASYNCHRONOUS			67108864 words	3.3			8	MICROELECTRONIC ASSEMBLY					55 Cel		64MX8	64M	0 Cel			TIN LEAD		UNSPECIFIED	R-XXMA-X22	3.6 V					Not Qualified			536870912 bit	3 V			e0								3.3
TC58FVB321FT-70	Toshiba	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8K,64K	45 mA	2097152 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES		YES	DUAL	R-PDSO-G48	3.6 V	1.2 mm			12 mm	Not Qualified		BOTTOM	33554432 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00001 Amp	18.4 mm	YES	80 ns	3	YES
THGBMAG7B2JBAAM	Toshiba	FLASH CARD	INDUSTRIAL	169		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL					17179869184 words				8						85 Cel		16GX8	16G	-40 Cel					BOTTOM	R-PBGA-B169	3.6 V								137438953472 bit	2.7 V						NAND TYPE
TC58NYG1S3ETAI0	Toshiba	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	ASYNCHRONOUS			268435456 words	1.8			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.5 mm	85 Cel		256MX8	256M	-40 Cel					DUAL	R-PDSO-G48	1.95 V	1.2 mm							2147483648 bit	1.7 V								18.4 mm			1.8
TC58CYG2S0HQAIE	Toshiba	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			4294967296 words				1	SMALL OUTLINE				1.27 mm	85 Cel		4GX1	4G	-40 Cel					DUAL	R-PDSO-G16	1.95 V	2.65 mm		104 MHz	7.5 mm				4294967296 bit	1.7 V								10.3 mm			1.8
TC58BVG0S3HBAI4-BDH	Toshiba	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	128K	30 mA	134217728 words	3.3	NO		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32	1		.8 mm	85 Cel		128MX8	128M	-40 Cel	1K	YES		YES	BOTTOM	R-PBGA-B63	3.6 V	1 mm			9 mm		.000025 ms		1073741824 bit	2.7 V		2K				NAND TYPE	.00005 Amp	11 mm			3.3	NO
TC58FVB641FT-70	Toshiba	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8K,64K	45 mA	4194304 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel		4MX16	4M	-40 Cel	8,127	YES		YES	DUAL	R-PDSO-G48	3.6 V	1.2 mm			12 mm	Not Qualified		BOTTOM	67108864 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00001 Amp	18.4 mm	YES	80 ns	3	YES
TC58FVB321XB-70	Toshiba	FLASH	INDUSTRIAL	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	8K,64K	45 mA	2097152 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA56,8X12,32	8	Flash Memories	.8 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES		YES	BOTTOM	R-PBGA-B56	3.6 V	1.2 mm			7 mm	Not Qualified		BOTTOM	33554432 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00001 Amp	10 mm	YES	80 ns	3	YES
TC58FVT008FT-85	Toshiba	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	40 mA	1048576 words	3.3	YES	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories	.5 mm	70 Cel	3-STATE	1MX8	1M	0 Cel	1,2,1,15	YES	Tin/Lead (Sn/Pb)	YES	DUAL	R-PDSO-G40	3.6 V	1.2 mm	100000 Write/Erase Cycles		10 mm	Not Qualified		TOP	8388608 bit	3 V			e0			NOR TYPE	.00001 Amp	18.4 mm		85 ns	3	YES
TC58FVT008FT-12	Toshiba	FLASH	INDUSTRIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	40 mA	1048576 words		YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories	.5 mm	85 Cel	3-STATE	1MX8	1M	-40 Cel	1,2,1,15	YES	Tin/Lead (Sn/Pb)	YES	DUAL	R-PDSO-G40	3.6 V	1.2 mm	100000 Write/Erase Cycles		10 mm	Not Qualified		TOP	8388608 bit	2.7 V			e0			NOR TYPE	.00001 Amp	18.4 mm		120 ns	3	YES
TC58NYG2S0HBAI4	Toshiba	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			536870912 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.8 mm	85 Cel		512MX8	512M	-40 Cel					BOTTOM	R-PBGA-B63	1.95 V	1 mm			9 mm				4294967296 bit	1.7 V						SLC NAND TYPE		11 mm			1.8
TC58FVT800F-12	Toshiba	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3			8	SMALL OUTLINE				1.27 mm	85 Cel		1MX8	1M	-40 Cel			TIN LEAD		DUAL	R-PDSO-G44	3.6 V	3.1 mm			12.6 mm	Not Qualified			8388608 bit	2.7 V			e0					28.2 mm		120 ns	3
TC58C128AFT	Toshiba	FLASH	COMMERCIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K	45 mA	16777216 words		NO	1.8/3.3,3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories	.5 mm	70 Cel		16MX8	16M	0 Cel	1K	NO			DUAL	R-PDSO-G48						Not Qualified			134217728 bit			512					.000006 Amp		YES	111 ns		NO
THGBM9G9T8KBAIG	Toshiba	FLASH CARD	OTHER	153		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL					68719476736 words				8						85 Cel		64GX8	64G	-25 Cel					BOTTOM	R-PBGA-B153	3.6 V								549755813888 bit	2.7 V						MLC NAND TYPE					2.7
TC58FVM5T3AFT65	Toshiba	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8K,64K	70 mA	2097152 words	3	YES	2.5/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES		YES	DUAL	R-PDSO-G48	3.6 V	1.2 mm			12 mm	Not Qualified		TOP	33554432 bit	2.3 V		8/16		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00001 Amp	18.4 mm	YES	75 ns	3	YES
TC58FVB400FT-12	Toshiba	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	40 mA	4194304 words	5	YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel	3-STATE	4MX8	4M	-40 Cel	1,2,1,7	YES	Tin/Lead (Sn/Pb)	YES	DUAL	R-PDSO-G48	5.5 V	1.2 mm	100000 Write/Erase Cycles		12 mm	Not Qualified		BOTTOM	33554432 bit	4.5 V			e0			NOR TYPE	.00001 Amp	18.4 mm		35 ns	3	YES
TC58TEG5DCJTAI0	Toshiba	FLASH	INDUSTRIAL	48	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			4294967296 words	3.3			8	SMALL OUTLINE					85 Cel		4GX8	4G	-40 Cel					DUAL	R-PDSO-G48	3.6 V								34359738368 bit	2.7 V											3.3
TC58FVT321XB-10	Toshiba	FLASH	INDUSTRIAL	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	8K,64K	45 mA	2097152 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA56,8X12,32	8	Flash Memories	.8 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES		YES	BOTTOM	R-PBGA-B56	3.6 V	1.2 mm			7 mm	Not Qualified		TOP	33554432 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00001 Amp	10 mm	YES	100 ns	3	YES
TC58FVB160AXB-10	Toshiba	FLASH	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	1048576 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	85 Cel		1MX16	1M	-40 Cel	1,2,1,31	YES		YES	BOTTOM	R-PBGA-B48	3.6 V	1.2 mm			6 mm	Not Qualified		BOTTOM	16777216 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp	8 mm	YES	100 ns	3	YES
THGBF7G9L4LBATR	Toshiba	FLASH	OTHER	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			68719476736 words				8	GRID ARRAY					85 Cel		64GX8	64G	-25 Cel					BOTTOM	R-PBGA-B153	3.6 V								549755813888 bit	2.7 V						MLC NAND TYPE					2.7
TC58NS256BDC	Toshiba	FLASH CARD	COMMERCIAL	22		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	UNSPECIFIED	SERIAL	ASYNCHRONOUS			33554432 words	3.3			8	MICROELECTRONIC ASSEMBLY					55 Cel		32MX8	32M	0 Cel			TIN LEAD		UNSPECIFIED	R-XXMA-X22	3.6 V					Not Qualified			268435456 bit	3 V			e0								3.3
TC58CYG2S0HRAIG	Toshiba	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS			4294967296 words				1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				1.27 mm	85 Cel		4GX1	4G	-40 Cel					DUAL	R-PDSO-N8	1.95 V	.8 mm		104 MHz	6 mm				4294967296 bit	1.7 V								8 mm			1.8
TC58FYT160FT-12	Toshiba	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	40 mA	2097152 words	1.8	YES	1.8/2.7	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel		2MX8	2M	-40 Cel	1,2,1,31	YES	Tin/Lead (Sn/Pb)	YES	DUAL	R-PDSO-G48	2.7 V	1.2 mm			12 mm	Not Qualified		TOP	16777216 bit	1.8 V	USER CONFIGURABLE 1M X 16		e0			NOR TYPE	.00002 Amp	18.4 mm		120 ns	1.8	YES
TC58FVM5T3AXB65	Toshiba	FLASH	INDUSTRIAL	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	8K,64K	70 mA	2097152 words	3	YES	2.5/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA56,8X12,32	8	Flash Memories	.8 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES		YES	BOTTOM	R-PBGA-B56	3.6 V	1.2 mm			7 mm	Not Qualified		TOP	33554432 bit	2.3 V		8/16		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00001 Amp	10 mm	YES	75 ns	3	YES
TC58NS128DC	Toshiba	FLASH CARD	COMMERCIAL	22	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS			16777216 words	3.3			8	UNCASED CHIP				2.54 mm	55 Cel		16MX8	16M	0 Cel					UPPER	R-XUUC-N22	3.6 V	.84 mm			37 mm	Not Qualified			134217728 bit	3 V								45 mm		35 ns	3.3
TC58F401FTI-90	Toshiba	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	50 mA	524288 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel		512KX8	512K	-40 Cel	1,2,1,7	YES	Tin/Lead (Sn/Pb)	YES	DUAL	R-PDSO-G48	5.5 V	1.2 mm	100000 Write/Erase Cycles		12 mm	Not Qualified		TOP	4194304 bit	4.5 V	USER CONFIGURABLE AS 256K X 16		e0			NOR TYPE	.0001 Amp	18.4 mm		90 ns	5	YES
TC58V64BTG	Toshiba	FLASH	COMMERCIAL	40	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		8K	30 mA	8388608 words		NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32		Flash Memories	.8 mm	70 Cel		8MX8	8M	0 Cel	1K	YES		YES	DUAL	R-PDSO-G40						Not Qualified			67108864 bit			512					.0001 Amp			35 ns		NO
TC58FYM6T2AXB70	Toshiba	FLASH	INDUSTRIAL	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	8K,64K	80 mA	4194304 words	1.8	YES	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA56,8X12,32	8	Flash Memories	.8 mm	85 Cel		4MX16	4M	-40 Cel	8,127	YES	Tin/Lead (Sn/Pb)	YES	BOTTOM	R-PBGA-B56	1.95 V	1.2 mm			7 mm	Not Qualified		TOP	67108864 bit	1.7 V		8/16	e0			NOR TYPE	.000025 Amp	10 mm	YES	80 ns	3	YES
TC58NS512DC	Toshiba	FLASH CARD	COMMERCIAL	22	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	ASYNCHRONOUS			67108864 words	3.3			8	UNCASED CHIP				2.54 mm	55 Cel		64MX8	64M	0 Cel			TIN LEAD		UPPER	R-XUUC-N22	3.6 V	.84 mm			37 mm	Not Qualified			536870912 bit	3 V			e0					45 mm			3.3
TC58NYG2S3EBAI5	Toshiba	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	ASYNCHRONOUS	128K	30 mA	536870912 words	1.8	NO	1.8	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories	.8 mm	85 Cel		512MX8	512M	-40 Cel	4K	YES		YES	BOTTOM	R-PBGA-B63	1.95 V	1 mm			10 mm	Not Qualified			4294967296 bit	1.7 V		2K					.00005 Amp	13 mm		25 ns	1.8	NO
THGBM1G7D4EBAI2	Toshiba	FLASH	OTHER	169	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			4294967296 words	3.3			32	GRID ARRAY, LOW PROFILE, FINE PITCH				.5 mm	85 Cel		4GX32	4G	-25 Cel					BOTTOM	R-PBGA-B169	3.6 V	1.4 mm			14 mm	Not Qualified			137438953472 bit	2.7 V						MLC NAND TYPE		18 mm			3.3

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.