Toshiba Flash Memory 776

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Width	Qualification	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
TC58F401F-10	Toshiba	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	5			8	SMALL OUTLINE				1.27 mm	70 Cel		512KX8	512K	0 Cel			Tin/Lead (Sn/Pb)		DUAL	R-PDSO-G44	5.5 V	3.1 mm		12.6 mm	Not Qualified	TOP	4194304 bit	4.5 V	100000 ERASE/PROGRAM CYCLES; BLOCK ERASE; ALSO CONFIGURABLE AS 256K X 16		e0			NOR TYPE		28.2 mm		100 ns	5
TC58BYG0S3HBAI4	Toshiba	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			134217728 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.8 mm	85 Cel		128MX8	128M	-40 Cel					BOTTOM	R-PBGA-B63	1.95 V	1 mm		9 mm			1073741824 bit	1.7 V								11 mm			1.8
TC58F1000F-15	Toshiba	FLASH	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	4K	30 mA	131072 words	5	NO	5	8	SMALL OUTLINE	SOP32,.5		Flash Memories	1.27 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	32	YES	TIN LEAD		DUAL	R-PDSO-G32	5.5 V	2.8 mm		10.7 mm	Not Qualified		1048576 bit	4.5 V			e0			NOR TYPE	.0001 Amp	20.6 mm		150 ns	12	NO
TC58DVM92A1TG00	Toshiba	FLASH	COMMERCIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL		16K	30 mA	67108864 words		NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories	.5 mm	70 Cel		64MX8	64M	0 Cel	4K	YES		YES	DUAL	R-PDSO-G48					Not Qualified		536870912 bit			512					.00005 Amp			35 ns		NO
THGBM1G8D8EBAI2	Toshiba	FLASH	OTHER	169	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			8589934592 words	3.3			32	GRID ARRAY, LOW PROFILE, FINE PITCH				.5 mm	85 Cel		8GX32	8G	-25 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B169	3.6 V	1.4 mm		14 mm	Not Qualified		274877906944 bit	2.7 V			e1			MLC NAND TYPE		18 mm			3.3
TC58BVG1S3HBAI4	Toshiba	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			268435456 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.8 mm	85 Cel		256MX8	256M	-40 Cel					BOTTOM	R-PBGA-B63	3.6 V	1 mm		9 mm			2147483648 bit	2.7 V								11 mm			3.3
TC58FVM6B5BXG65	Toshiba	FLASH	INDUSTRIAL	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA56,8X12,32		Flash Memories	.8 mm	85 Cel		4MX16	4M	-40 Cel	8,127	YES		YES	BOTTOM	R-PBGA-B56	3.6 V	1.2 mm		7 mm	Not Qualified	BOTTOM	67108864 bit	2.7 V		8		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00001 Amp	10 mm	YES	65 ns	3	YES
TC58FVB400F-10	Toshiba	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	40 mA	4194304 words	5	YES	3/3.3	8	SMALL OUTLINE	SOP44,.63	8	Flash Memories	1.27 mm	85 Cel	3-STATE	4MX8	4M	-40 Cel	1,2,1,7	YES	Tin/Lead (Sn/Pb)	YES	DUAL	R-PDSO-G44	5.5 V	3.1 mm	100000 Write/Erase Cycles	12.6 mm	Not Qualified	BOTTOM	33554432 bit	4.5 V			e0			NOR TYPE	.00001 Amp	28.2 mm		35 ns	3	YES
TC58DVM92A5BAJ3	Toshiba	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			67108864 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.8 mm	85 Cel		64MX8	64M	-40 Cel					BOTTOM	R-PBGA-B63	3.6 V	1 mm		8.5 mm			536870912 bit	2.7 V								13 mm			3.3
TC58NYG1S3HBAI6	Toshiba	FLASH	INDUSTRIAL	67	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			268435456 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.8 mm	85 Cel		256MX8	256M	-40 Cel					BOTTOM	R-PBGA-B67	1.95 V	1 mm		6.5 mm			2147483648 bit	1.7 V						SLC NAND TYPE		8 mm			1.8
TC58C1287AXB	Toshiba	FLASH	INDUSTRIAL	69	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		16K	45 mA	16777216 words		NO	1.8/3.3,3/3.3	8	GRID ARRAY, FINE PITCH	BGA69,10X12,32		Flash Memories	.8 mm	85 Cel		16MX8	16M	-40 Cel	1K	NO			BOTTOM	R-PBGA-B69					Not Qualified		134217728 bit			512					.000006 Amp		YES	111 ns		NO
TC58V16BFT	Toshiba	FLASH	COMMERCIAL	40	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	ASYNCHRONOUS	4K	100 mA	2097152 words		NO	3.3/5	8	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32		Flash Memories	.8 mm	70 Cel	3-STATE	2MX8	2M	0 Cel	512	YES	Tin/Lead (Sn/Pb)	YES	DUAL	R-PDSO-G40	5.5 V	1.2 mm		10.16 mm	Not Qualified		16777216 bit	3 V		256	e0				.0001 Amp	18.41 mm		45 ns	3	NO
TC58F400FTI-90	Toshiba	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	50 mA	524288 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel		512KX8	512K	-40 Cel	1,2,1,7	YES	Tin/Lead (Sn/Pb)	YES	DUAL	R-PDSO-G48	5.5 V	1.2 mm	100000 Write/Erase Cycles	12 mm	Not Qualified	BOTTOM	4194304 bit	4.5 V	USER CONFIGURABLE AS 256K X 16		e0			NOR TYPE	.0001 Amp	18.4 mm		90 ns	5	YES
TC58512FT(EL)	Toshiba	FLASH	COMMERCIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL		16K	30 mA	67108864 words	3.3	NO	3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories	.5 mm	70 Cel		64MX8	64M	0 Cel	4K	YES	Tin/Lead (Sn/Pb)	YES	DUAL	R-PDSO-G48					Not Qualified		536870912 bit			512	e0				.0001 Amp			35 ns		NO
TC58NYM9S3ETA00	Toshiba	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	ASYNCHRONOUS			67108864 words	1.8			8	SMALL OUTLINE, THIN PROFILE				.5 mm	85 Cel		64MX8	64M	-40 Cel					DUAL	R-PDSO-G48	1.95 V	1.2 mm		12 mm			536870912 bit	1.7 V								18.4 mm			1.8
TC58NVG2S0HBAI4	Toshiba	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			536870912 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.8 mm	85 Cel		512MX8	512M	-40 Cel					BOTTOM	R-PBGA-B63	3.6 V	1 mm		9 mm			4294967296 bit	2.7 V						SLC NAND TYPE		11 mm			3.3
TC58DVG02A3TA00	Toshiba
TC58FYM5T3AFT70	Toshiba	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	8K,64K	80 mA	2097152 words	1.8	YES	1.8	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES	TIN LEAD	YES	DUAL	R-PDSO-G48	1.95 V	1.2 mm		12 mm	Not Qualified	TOP	33554432 bit	1.7 V		8/16	e0			NOR TYPE	.000025 Amp	18.4 mm	YES	80 ns	3	YES
TC58512FTI(EL)	Toshiba	FLASH	OTHER	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL		16K	30 mA	67108864 words		NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories	.5 mm	70 Cel		64MX8	64M	-40 Cel	4K	YES		YES	DUAL	R-PDSO-G48					Not Qualified		536870912 bit			512					.0001 Amp			35 ns		NO
TC58F401FI-10	Toshiba	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	50 mA	524288 words	5	YES	5	8	SMALL OUTLINE	SOP44,.63	8	Flash Memories	1.27 mm	85 Cel		512KX8	512K	-40 Cel	1,2,1,7	YES	Tin/Lead (Sn/Pb)	YES	DUAL	R-PDSO-G44	5.5 V	3.1 mm	100000 Write/Erase Cycles	12.6 mm	Not Qualified	TOP	4194304 bit	4.5 V	USER CONFIGURABLE AS 256K X 16		e0			NOR TYPE	.0001 Amp	28.2 mm		100 ns	5	YES
TC58FVM7T2AFT80	Toshiba	FLASH	INDUSTRIAL	56	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	8K,64K	70 mA	8388608 words	3	YES	2.5/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP56,.8,20	8	Flash Memories	.5 mm	85 Cel		8MX16	8M	-40 Cel	8, 255	YES		YES	DUAL	R-PDSO-G56	3.6 V	1.2 mm		14 mm	Not Qualified	TOP	134217728 bit	2.3 V		8/16		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00001 Amp	18.4 mm	YES	75 ns	3	YES
TC58FVB400FT-10	Toshiba	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	40 mA	4194304 words	5	YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel	3-STATE	4MX8	4M	-40 Cel	1,2,1,7	YES	Tin/Lead (Sn/Pb)	YES	DUAL	R-PDSO-G48	5.5 V	1.2 mm	100000 Write/Erase Cycles	12 mm	Not Qualified	BOTTOM	33554432 bit	4.5 V			e0			NOR TYPE	.00001 Amp	18.4 mm		35 ns	3	YES
TC58FYM5B3AFT70	Toshiba	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	8K,64K	80 mA	2097152 words	1.8	YES	1.8	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES	TIN LEAD	YES	DUAL	R-PDSO-G48	1.95 V	1.2 mm		12 mm	Not Qualified	BOTTOM	33554432 bit	1.7 V		8/16	e0			NOR TYPE	.000025 Amp	18.4 mm	YES	80 ns	3	YES
TC58FVT004FT-10	Toshiba	FLASH	INDUSTRIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	40 mA	4194304 words	5	YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories	.5 mm	85 Cel	3-STATE	4MX8	4M	-40 Cel	1,2,1,7	YES	Tin/Lead (Sn/Pb)	YES	DUAL	R-PDSO-G40	5.5 V	1.2 mm	100000 Write/Erase Cycles	10 mm	Not Qualified	TOP	33554432 bit	4.5 V			e0			NOR TYPE	.00001 Amp	18.4 mm		35 ns	3	YES
THGBMHG8C4LBAB7	Toshiba	FLASH	INDUSTRIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	ASYNCHRONOUS			34359738368 words				8	GRID ARRAY		4			105 Cel		32GX8	32G	-40 Cel					BOTTOM	R-PBGA-B153	3.6 V						274877906944 bit	2.7 V	ALSO ORGANISED AS 256GX1										2.7
TC58FVM6T2AFT65	Toshiba	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	8K,64K	70 mA	4194304 words	3	YES	2.5/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel		4MX16	4M	-40 Cel	8,127	YES		YES	DUAL	R-PDSO-G48	3.6 V	1.2 mm		12 mm	Not Qualified	TOP	67108864 bit	2.3 V		8/16		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00001 Amp	18.4 mm	YES	75 ns	3	YES
TC58NYG1S3ETA00	Toshiba	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	ASYNCHRONOUS			268435456 words	1.8			8	SMALL OUTLINE, THIN PROFILE				.5 mm	85 Cel		256MX8	256M	-40 Cel					DUAL	R-PDSO-G48	1.95 V	1.2 mm		12 mm			2147483648 bit	1.7 V								18.4 mm			1.8
TC58FVM7B2AFT65	Toshiba	FLASH	INDUSTRIAL	56	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	8K,64K	70 mA	8388608 words	3	YES	2.5/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP56,.8,20	8	Flash Memories	.5 mm	85 Cel		8MX16	8M	-40 Cel	8, 255	YES		YES	DUAL	R-PDSO-G56	3.6 V	1.2 mm		14 mm	Not Qualified	BOTTOM	134217728 bit	2.3 V		8/16		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00001 Amp	18.4 mm	YES	75 ns	3	YES
TC58F1000J-15	Toshiba	FLASH	COMMERCIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	4K	30 mA	131072 words	5	NO	5	8	SMALL OUTLINE	SOJ32,.44		Flash Memories	1.27 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	32	YES	TIN LEAD		DUAL	R-PDSO-J32	5.5 V	3.6 mm		10.2 mm	Not Qualified		1048576 bit	4.5 V			e0			NOR TYPE	.0001 Amp	21 mm		200 ns	12	NO
TC58NVG5H2HTAI0	Toshiba	FLASH																																																	SLC NAND TYPE					3.3
TC58FVB160AFT-10	Toshiba	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	1048576 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel		1MX16	1M	-40 Cel	1,2,1,31	YES		YES	DUAL	R-PDSO-G48	3.6 V	1.2 mm		12 mm	Not Qualified	BOTTOM	16777216 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp	18.4 mm	YES	100 ns	3	YES
TC58BVG1S3HTA00	Toshiba	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			268435456 words	3.3			8	SMALL OUTLINE, THIN PROFILE				.5 mm	70 Cel		256MX8	256M	0 Cel					DUAL	R-PDSO-G48	3.6 V	1.2 mm		12 mm			2147483648 bit	2.7 V								18.4 mm			3.3
TC58BVG0S3HBAI6	Toshiba	FLASH	INDUSTRIAL	67	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			134217728 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.8 mm	85 Cel		128MX8	128M	-40 Cel					BOTTOM	R-PBGA-B67	3.6 V	1 mm		6.5 mm			1073741824 bit	2.7 V								8 mm			3.3
TC58FVT004FT-85	Toshiba	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	40 mA	524288 words	3.3	YES	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories	.5 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	1,2,1,7	YES	Tin/Lead (Sn/Pb)	YES	DUAL	R-PDSO-G40	3.6 V	1.2 mm	100000 Write/Erase Cycles	10 mm	Not Qualified	TOP	4194304 bit	3 V			e0			NOR TYPE	.00001 Amp	18.4 mm		85 ns	3	YES
TC58NVG1S3CTA00	Toshiba
TC58NVG0S3CTA00	Toshiba
TC5816BDC	Toshiba	FLASH	COMMERCIAL	22		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED	PARALLEL	ASYNCHRONOUS			2097152 words	5			8	MICROELECTRONIC ASSEMBLY					55 Cel		2MX8	2M	0 Cel			TIN LEAD		UNSPECIFIED	R-XXMA-X22	5.5 V				Not Qualified		16777216 bit	4.5 V			e0							45 ns	5
TC58BVG2S0HTAI0	Toshiba	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			536870912 words	3.3			8	SMALL OUTLINE, THIN PROFILE				.5 mm	85 Cel		512MX8	512M	-40 Cel					DUAL	R-PDSO-G48	3.6 V	1.2 mm		12 mm			4294967296 bit	2.7 V								18.4 mm			3.3
TC58NVG0S3CBAJ5	Toshiba
TC58NVG0S3HBAI4	Toshiba	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			134217728 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.8 mm	85 Cel		128MX8	128M	-40 Cel					BOTTOM	R-PBGA-B63	3.6 V	1 mm		9 mm			1073741824 bit	2.7 V						SLC NAND TYPE		11 mm			3.3
TC58NYG0S3ETAI0	Toshiba	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	ASYNCHRONOUS			134217728 words	1.8			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.5 mm	85 Cel		128MX8	128M	-40 Cel					DUAL	R-PDSO-G48	1.95 V	1.2 mm					1073741824 bit	1.7 V								18.4 mm			1.8
TC58F010T-10	Toshiba	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS			131072 words	5			8	CHIP CARRIER					70 Cel	3-STATE	128KX8	128K	0 Cel			TIN LEAD		QUAD	R-PQCC-J32	5.25 V				Not Qualified		1048576 bit	4.75 V	BULK ERASE; 10K ERASE/WRITE CYCLES MIN.		e0			NOR TYPE				100 ns	12
TC58FVB016FT-85	Toshiba	FLASH	INDUSTRIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	40 mA	2097152 words	3.3	YES	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories	.5 mm	85 Cel		2MX8	2M	-40 Cel	1,2,1,31	YES		YES	DUAL	R-PDSO-G40	3.6 V	1.2 mm		10 mm	Not Qualified	BOTTOM	16777216 bit	3 V						NOR TYPE	.00001 Amp	18.4 mm		85 ns	3	YES
TC58FVB321FT-10	Toshiba	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	8K,64K	45 mA	2097152 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES		YES	DUAL	R-PDSO-G48	3.6 V	1.2 mm		12 mm	Not Qualified	BOTTOM	33554432 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00001 Amp	18.4 mm	YES	100 ns	3	YES
TC58BVG2S0HBAI4	Toshiba	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			536870912 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.8 mm	85 Cel		512MX8	512M	-40 Cel					BOTTOM	R-PBGA-B63	3.6 V	1 mm		9 mm			4294967296 bit	2.7 V								11 mm			3.3
TC58FVB008FT-12	Toshiba	FLASH	INDUSTRIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	40 mA	1048576 words		YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories	.5 mm	85 Cel	3-STATE	1MX8	1M	-40 Cel	1,2,1,15	YES	Tin/Lead (Sn/Pb)	YES	DUAL	R-PDSO-G40	3.6 V	1.2 mm	100000 Write/Erase Cycles	10 mm	Not Qualified	BOTTOM	8388608 bit	2.7 V			e0			NOR TYPE	.00001 Amp	18.4 mm		120 ns	3	YES
TC58F400F-90	Toshiba	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	5			8	SMALL OUTLINE				1.27 mm	70 Cel		512KX8	512K	0 Cel			Tin/Lead (Sn/Pb)		DUAL	R-PDSO-G44	5.5 V	3.1 mm		12.6 mm	Not Qualified	BOTTOM	4194304 bit	4.5 V	100000 ERASE/PROGRAM CYCLES; BLOCK ERASE; ALSO CONFIGURABLE AS 256K X 16		e0			NOR TYPE		28.2 mm		90 ns	5
TC58NYG0S3HBAI6	Toshiba	FLASH	INDUSTRIAL	67	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			134217728 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.8 mm	85 Cel		128MX8	128M	-40 Cel					BOTTOM	R-PBGA-B67	1.95 V	1 mm		6.5 mm			1073741824 bit	1.7 V						SLC NAND TYPE		8 mm			1.8

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.