Toshiba Flash Memory 776

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Width	Qualification	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
TC58FVT321FT-10	Toshiba	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	8K,64K	45 mA	2097152 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES		YES	DUAL	R-PDSO-G48	3.6 V	1.2 mm		12 mm	Not Qualified		TOP	33554432 bit	2.7 V						NOR TYPE	.00001 Amp	18.4 mm	YES	100 ns	3	YES
TC58BYG0S3HBAI4JAH	Toshiba	FLASH																																																							1.8
TC58F010P-12	Toshiba	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			131072 words	5			8	IN-LINE				2.54 mm	70 Cel	3-STATE	128KX8	128K	0 Cel			TIN LEAD		DUAL	R-PDIP-T32	5.25 V	4.8 mm		15.24 mm	Not Qualified			1048576 bit	4.75 V	BULK ERASE; 10K ERASE/WRITE CYCLES MIN.		e0			NOR TYPE		42 mm		120 ns	12
TC58FYM7B2AFT70	Toshiba	FLASH	INDUSTRIAL	56	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	8K,64K	80 mA	8388608 words	1.8	YES	1.8	16	SMALL OUTLINE, THIN PROFILE	TSSOP56,.8,20	8	Flash Memories	.5 mm	85 Cel		8MX16	8M	-40 Cel	8, 255	YES	TIN LEAD	YES	DUAL	R-PDSO-G56	1.95 V	1.2 mm		14 mm	Not Qualified		BOTTOM	134217728 bit	1.7 V		8/16	e0			NOR TYPE	.000025 Amp	18.4 mm	YES	80 ns	3	YES
THGBMAG7B2JBAIM	Toshiba	FLASH CARD	OTHER	169		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL					17179869184 words				8						85 Cel		16GX8	16G	-25 Cel					BOTTOM	R-PBGA-B169	3.6 V							137438953472 bit	2.7 V						NAND TYPE					2.7
TC58NVM9S3CBAJW	Toshiba
TC58NVG0S3HBAI6	Toshiba	FLASH	INDUSTRIAL	67	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			134217728 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.8 mm	85 Cel		128MX8	128M	-40 Cel					BOTTOM	R-PBGA-B67	3.6 V	1 mm		6.5 mm				1073741824 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE		8 mm			3.3
TC58FVB800F-10	Toshiba	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	40 mA	1048576 words		YES	3/3.3	8	SMALL OUTLINE	SOP44,.63	8	Flash Memories	1.27 mm	85 Cel	3-STATE	1MX8	1M	-40 Cel	1,2,1,15	YES	Tin/Lead (Sn/Pb)	YES	DUAL	R-PDSO-G44	3.6 V	3.1 mm	100000 Write/Erase Cycles	12.6 mm	Not Qualified		BOTTOM	8388608 bit	2.7 V			e0			NOR TYPE	.00001 Amp	28.2 mm		100 ns	3	YES
TC58FVB160AXG-70	Toshiba	FLASH	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			1048576 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH		8		.8 mm	85 Cel		1MX16	1M	-40 Cel					BOTTOM	R-PBGA-B48	3.6 V	1.2 mm		6 mm	Not Qualified		BOTTOM	16777216 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE		8 mm		70 ns	3
TC58FVM5T3AXG65	Toshiba	FLASH	INDUSTRIAL	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	8K,64K	70 mA	2097152 words	3	YES		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA60,8X12,32	8		.8 mm	85 Cel	3-STATE	2MX16	2M	-40 Cel	8,63	YES		YES	BOTTOM	R-PBGA-B56	3.6 V	1.2 mm	100000 Write/Erase Cycles	7 mm			TOP	33554432 bit	2.3 V						NOR TYPE	.00001 Amp	10 mm	YES	65 ns	3	YES
TC58F1000P-20	Toshiba	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	4K	30 mA	131072 words	5	NO	5	8	IN-LINE	DIP32,.6		Flash Memories	2.54 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	32	YES	TIN LEAD		DUAL	R-PDIP-T32	5.5 V	4.8 mm		15.24 mm	Not Qualified			1048576 bit	4.5 V			e0			NOR TYPE	.0001 Amp	42 mm		150 ns	12	NO
TC58BVG0S3HTA00	Toshiba	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			134217728 words	3.3			8	SMALL OUTLINE, THIN PROFILE				.5 mm	70 Cel		128MX8	128M	0 Cel					DUAL	R-PDSO-G48	3.6 V	1.2 mm		12 mm				1073741824 bit	2.7 V								18.4 mm			3.3
TC5816BFT	Toshiba	FLASH	COMMERCIAL	40	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	ASYNCHRONOUS	4K	60 mA	2097152 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32		Flash Memories	.8 mm	70 Cel	3-STATE	2MX8	2M	0 Cel	512	YES		YES	DUAL	R-PDSO-G40	5.5 V	1.2 mm		10.16 mm	Not Qualified			16777216 bit	4.5 V		256					.0001 Amp	18.41 mm		45 ns	5	NO
TC58F010P-10	Toshiba	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			131072 words	5			8	IN-LINE				2.54 mm	70 Cel	3-STATE	128KX8	128K	0 Cel			TIN LEAD		DUAL	R-PDIP-T32	5.25 V	4.8 mm		15.24 mm	Not Qualified			1048576 bit	4.75 V	BULK ERASE; 10K ERASE/WRITE CYCLES MIN.		e0			NOR TYPE		42 mm		100 ns	12
TC58NYG1S3EBAI5	Toshiba	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	ASYNCHRONOUS			268435456 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.8 mm	85 Cel		256MX8	256M	-40 Cel					BOTTOM	R-PBGA-B63	1.95 V	1 mm		10 mm				2147483648 bit	1.7 V								13 mm			1.8
TC58V64AFT(EL)	Toshiba	FLASH	COMMERCIAL	40	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL		8K	30 mA	8388608 words	3.3	NO	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.36,32		Flash Memories	.8 mm	70 Cel		8MX8	8M	0 Cel	1K	YES	TIN LEAD	YES	DUAL	R-PDSO-G40					Not Qualified			67108864 bit			512	e0				.0001 Amp			35 ns		NO
TC58FVM7T2AFT65	Toshiba	FLASH	INDUSTRIAL	56	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	8K,64K	70 mA	8388608 words	3	YES	2.5/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP56,.8,20	8	Flash Memories	.5 mm	85 Cel		8MX16	8M	-40 Cel	8, 255	YES		YES	DUAL	R-PDSO-G56	3.6 V	1.2 mm		14 mm	Not Qualified		TOP	134217728 bit	2.3 V		8/16		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00001 Amp	18.4 mm	YES	75 ns	3	YES
TC58C256AFT	Toshiba	FLASH	COMMERCIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL		16K	45 mA	33554432 words		NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories	.5 mm	70 Cel		32MX8	32M	0 Cel	2K	NO			DUAL	R-PDSO-G48					Not Qualified			268435456 bit			512					.00004 Amp		YES	103 ns		NO
TC58F4000TR-12	Toshiba	FLASH	COMMERCIAL	32	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	5			8	SMALL OUTLINE, THIN PROFILE				.5 mm	70 Cel	3-STATE	512KX8	512K	0 Cel			TIN LEAD		DUAL	R-PDSO-G32	5.25 V	1.2 mm		7.9 mm	Not Qualified			4194304 bit	4.75 V	BULK ERASE; 10K ERASE/WRITE CYCLES MIN.		e0			NOR TYPE		18.4 mm		120 ns	12
TC58F401FTI-10	Toshiba	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	50 mA	524288 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel		512KX8	512K	-40 Cel	1,2,1,7	YES	Tin/Lead (Sn/Pb)	YES	DUAL	R-PDSO-G48	5.5 V	1.2 mm	100000 Write/Erase Cycles	12 mm	Not Qualified		TOP	4194304 bit	4.5 V	USER CONFIGURABLE AS 256K X 16		e0			NOR TYPE	.0001 Amp	18.4 mm		100 ns	5	YES
TC58BYG2S0HBAI4	Toshiba	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			536870912 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.8 mm	85 Cel		512MX8	512M	-40 Cel					BOTTOM	R-PBGA-B63	1.95 V	1 mm		9 mm				4294967296 bit	1.7 V								11 mm			1.8
TC58F010F-10	Toshiba	FLASH	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			131072 words	5			8	SMALL OUTLINE				1.27 mm	70 Cel	3-STATE	128KX8	128K	0 Cel			TIN LEAD		DUAL	R-PDSO-G32	5.25 V	2.8 mm		10.7 mm	Not Qualified			1048576 bit	4.75 V	BULK ERASE; 10K ERASE/WRITE CYCLES MIN.		e0			NOR TYPE		20.6 mm		100 ns	12
THGBMAG8B4JBAIM	Toshiba	FLASH CARD	OTHER	169		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL					34359738368 words				8						85 Cel		32GX8	32G	-25 Cel					BOTTOM	R-PBGA-B169	3.6 V							274877906944 bit	2.7 V						NAND TYPE					2.7
TC58FVB160ATG-10	Toshiba	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3			16	SMALL OUTLINE, THIN PROFILE		8		.5 mm	85 Cel		1MX16	1M	-40 Cel					DUAL	R-PDSO-G48	3.6 V	1.2 mm		12 mm	Not Qualified		BOTTOM	16777216 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE		18.4 mm		100 ns	3
TC58F1000F-15(EL)	Toshiba	FLASH	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			131072 words	5			8	SMALL OUTLINE				1.27 mm	70 Cel	3-STATE	128KX8	128K	0 Cel			TIN LEAD		DUAL	R-PDSO-G32	5.5 V	2.8 mm		10.7 mm	Not Qualified			1048576 bit	4.5 V			e0			NOR TYPE		20.6 mm		150 ns	12
TC58FVT321XB-70	Toshiba	FLASH	INDUSTRIAL	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	8K,64K	45 mA	2097152 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA56,8X12,32	8	Flash Memories	.8 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES		YES	BOTTOM	R-PBGA-B56	3.6 V	1.2 mm		7 mm	Not Qualified		TOP	33554432 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00001 Amp	10 mm	YES	80 ns	3	YES
TC58FVT400FT-10	Toshiba	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	40 mA	4194304 words	5	YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel	3-STATE	4MX8	4M	-40 Cel	1,2,1,7	YES	Tin/Lead (Sn/Pb)	YES	DUAL	R-PDSO-G48	5.5 V	1.2 mm	100000 Write/Erase Cycles	12 mm	Not Qualified		TOP	33554432 bit	4.5 V			e0			NOR TYPE	.00001 Amp	18.4 mm		35 ns	3	YES
THGBMAG7A2JBAIR	Toshiba	FLASH CARD	OTHER	153		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL					17179869184 words				8						85 Cel		16GX8	16G	-25 Cel					BOTTOM	R-PBGA-B153	3.6 V							137438953472 bit	2.7 V						NAND TYPE					2.7
TC58NS100DC	Toshiba	FLASH CARD	COMMERCIAL	22		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED	SERIAL	ASYNCHRONOUS			134217728 words	3.3			8	MICROELECTRONIC ASSEMBLY					55 Cel		128MX8	128M	0 Cel			TIN LEAD		UNSPECIFIED	R-XXMA-X22	3.6 V				Not Qualified			1073741824 bit	3 V			e0								3.3
TC58F1000F-15(TP1)	Toshiba	FLASH	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			131072 words	5			8	SMALL OUTLINE				1.27 mm	70 Cel	3-STATE	128KX8	128K	0 Cel			TIN LEAD		DUAL	R-PDSO-G32	5.5 V	2.8 mm		10.7 mm	Not Qualified			1048576 bit	4.5 V			e0			NOR TYPE		20.6 mm		150 ns	12
TC58FVT160AXG-70	Toshiba	FLASH	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			1048576 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH		8		.8 mm	85 Cel		1MX16	1M	-40 Cel					BOTTOM	R-PBGA-B48	3.6 V	1.2 mm		6 mm	Not Qualified		TOP	16777216 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE		8 mm		70 ns	3
TC58CVG2S0HRAIF	Toshiba	FLASH	INDUSTRIAL	8		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS			536870912 words				8						85 Cel		512MX8	512M	-40 Cel					DUAL	R-PDSO-N8	3.6 V			6 mm		SPI		4294967296 bit	2.7 V						SLC NAND TYPE		8 mm
TC58FVT641FT-10	Toshiba	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	8K,64K	45 mA	4194304 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel		4MX16	4M	-40 Cel	8,127	YES		YES	DUAL	R-PDSO-G48	3.6 V	1.2 mm		12 mm	Not Qualified		TOP	67108864 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00001 Amp	18.4 mm	YES	100 ns	3	YES
TC58FVM5B3AXB65	Toshiba	FLASH	INDUSTRIAL	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	8K,64K	70 mA	2097152 words	3	YES	2.5/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA56,8X12,32	8	Flash Memories	.8 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES		YES	BOTTOM	R-PBGA-B56	3.6 V	1.2 mm		7 mm	Not Qualified		BOTTOM	33554432 bit	2.3 V		8/16		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00001 Amp	10 mm	YES	75 ns	3	YES
TC58FBT016FT-12	Toshiba
TC58NVM9S3EBAI3	Toshiba	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	ASYNCHRONOUS			67108864 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.8 mm	85 Cel		64MX8	64M	-40 Cel					BOTTOM	R-PBGA-B63	3.6 V	1 mm		8.5 mm				536870912 bit	2.7 V								13 mm			3.3
TC58FVT160ATG-10	Toshiba	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3			16	SMALL OUTLINE, THIN PROFILE		8		.5 mm	85 Cel		1MX16	1M	-40 Cel					DUAL	R-PDSO-G48	3.6 V	1.2 mm		12 mm	Not Qualified		TOP	16777216 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE		18.4 mm		100 ns	3
TC58FVM5T3ATG65	Toshiba	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	8K,64K	70 mA	2097152 words	3	YES		16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8		.5 mm	85 Cel	3-STATE	2MX16	2M	-40 Cel	8,63	YES		YES	DUAL	R-PDSO-G48	3.6 V	1.2 mm	100000 Write/Erase Cycles	12 mm			TOP	33554432 bit	2.3 V						NOR TYPE	.00001 Amp	18.4 mm	YES	65 ns	3	YES
TC58BVG0S3HBAI4	Toshiba	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			134217728 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.8 mm	85 Cel		128MX8	128M	-40 Cel					BOTTOM	R-PBGA-B63	3.6 V	1 mm		9 mm				1073741824 bit	2.7 V								11 mm			3.3
THGBMHG7C2LBAB7	Toshiba	FLASH	INDUSTRIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	ASYNCHRONOUS			17179869184 words				8	GRID ARRAY		4			105 Cel		16GX8	16G	-40 Cel					BOTTOM	R-PBGA-B153	3.6 V							137438953472 bit	2.7 V	ALSO ORGANISED AS 128GX1										2.7
TC58NVG3S0FTAI0	Toshiba	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			1073741824 words	3.3			8	SMALL OUTLINE, THIN PROFILE				.5 mm	85 Cel		1GX8	1G	-40 Cel					DUAL	R-PDSO-G48	3.6 V	1.2 mm		12 mm				8589934592 bit	2.7 V								18.4 mm			3.3
TC58NVG3S0FBAID	Toshiba	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			1073741824 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.8 mm	85 Cel		1GX8	1G	-40 Cel					BOTTOM	R-PBGA-B63	3.6 V	1 mm		10 mm				8589934592 bit	2.7 V								11 mm			3.3
TC58FVT008FT-10	Toshiba	FLASH	INDUSTRIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	40 mA	1048576 words		YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories	.5 mm	85 Cel	3-STATE	1MX8	1M	-40 Cel	1,2,1,15	YES	Tin/Lead (Sn/Pb)	YES	DUAL	R-PDSO-G40	3.6 V	1.2 mm	100000 Write/Erase Cycles	10 mm	Not Qualified		TOP	8388608 bit	2.7 V			e0			NOR TYPE	.00001 Amp	18.4 mm		100 ns	3	YES
TC58FVB016-12	Toshiba	FLASH	INDUSTRIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			2097152 words	3			8	SMALL OUTLINE, THIN PROFILE				.5 mm	85 Cel		2MX8	2M	-40 Cel					DUAL	R-PDSO-G40	3.6 V	1.2 mm		10 mm	Not Qualified		BOTTOM	16777216 bit	2.7 V						NOR TYPE		18.4 mm		120 ns	3
TC58NVG0S3HTAI0	Toshiba	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			134217728 words	3.3			8	SMALL OUTLINE, THIN PROFILE				.5 mm	85 Cel		128MX8	128M	-40 Cel					DUAL	R-PDSO-G48	3.6 V	1.2 mm		12 mm				1073741824 bit	2.7 V						SLC NAND TYPE		18.4 mm			3.3
TC58FVT160FT-12	Toshiba	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	40 mA	1048576 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel		1MX16	1M	-40 Cel	1,2,1,31	YES		YES	DUAL	R-PDSO-G48	3.6 V	1.2 mm		12 mm	Not Qualified		TOP	16777216 bit	2.7 V	USER CONFIGURABLE 1M X 16			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp	18.4 mm		120 ns	3	YES
TC58FVM6B2AXB65	Toshiba	FLASH	INDUSTRIAL	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	8K,64K	70 mA	4194304 words	3	YES	2.5/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA56,8X12,32	8	Flash Memories	.8 mm	85 Cel		4MX16	4M	-40 Cel	8,127	YES		YES	BOTTOM	R-PBGA-B56	3.6 V	1.2 mm		7 mm	Not Qualified		BOTTOM	67108864 bit	2.3 V		8/16		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00001 Amp	10 mm	YES	75 ns	3	YES
TC58FVT160FT-10	Toshiba	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	40 mA	1048576 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel		1MX16	1M	-40 Cel	1,2,1,31	YES		YES	DUAL	R-PDSO-G48	3.6 V	1.2 mm		12 mm	Not Qualified		TOP	16777216 bit	2.7 V	USER CONFIGURABLE 1M X 16			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp	18.4 mm		100 ns	3	YES

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.