Toshiba Flash Memory 776

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
THGBMAG5A1JBAIT	Toshiba	FLASH CARD	OTHER	153		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL					4294967296 words				8						85 Cel		4GX8	4G	-25 Cel					BOTTOM	R-PBGA-B153	3.6 V							34359738368 bit	2.7 V						NAND TYPE					2.7
THGBMAG9B8JBAIE	Toshiba	FLASH CARD	OTHER	169		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL					68719476736 words				8						85 Cel		64GX8	64G	-25 Cel					BOTTOM	R-PBGA-B169	3.6 V							549755813888 bit	2.7 V						NAND TYPE					2.7
TC58NYG0S3HBAI4	Toshiba	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			134217728 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.8 mm	85 Cel		128MX8	128M	-40 Cel					BOTTOM	R-PBGA-B63	1.95 V	1 mm			9 mm			1073741824 bit	1.7 V						SLC NAND TYPE		11 mm			1.8
TC58NVG1S3HBAI6	Toshiba	FLASH	INDUSTRIAL	67	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			268435456 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.8 mm	85 Cel		256MX8	256M	-40 Cel					BOTTOM	R-PBGA-B67	3.6 V	1 mm			6.5 mm			2147483648 bit	2.7 V						SLC NAND TYPE		8 mm			3.3
TC58F010F-12	Toshiba	FLASH	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			131072 words	5			8	SMALL OUTLINE				1.27 mm	70 Cel	3-STATE	128KX8	128K	0 Cel			TIN LEAD		DUAL	R-PDSO-G32	5.25 V	2.8 mm			10.7 mm	Not Qualified		1048576 bit	4.75 V	BULK ERASE; 10K ERASE/WRITE CYCLES MIN.		e0			NOR TYPE		20.6 mm		120 ns	12
TC58NYG2S3ETA00	Toshiba	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	ASYNCHRONOUS	128K	30 mA	536870912 words	1.8	NO	1.8	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories	.5 mm	85 Cel		512MX8	512M	-40 Cel	4K	YES		YES	DUAL	R-PDSO-G48	1.95 V	1.2 mm			12 mm	Not Qualified		4294967296 bit	1.7 V		2K					.00005 Amp	18.4 mm		25 ns	1.8	NO
TC58F1001F-20	Toshiba	FLASH	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL		4K	30 mA	131072 words	5	NO	5	8	SMALL OUTLINE	SOP32,.5		Flash Memories	1.27 mm	70 Cel		128KX8	128K	0 Cel	32	YES	Tin/Lead (Sn/Pb)		DUAL	R-PDSO-G32						Not Qualified		1048576 bit				e0			NOR TYPE	.0001 Amp			200 ns		NO
TC58F401FT-90	Toshiba	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	5			8	SMALL OUTLINE, THIN PROFILE				.5 mm	70 Cel		512KX8	512K	0 Cel			Tin/Lead (Sn/Pb)		DUAL	R-PDSO-G48	5.5 V	1.2 mm			12 mm	Not Qualified	TOP	4194304 bit	4.5 V	100000 ERASE/PROGRAM CYCLES; BLOCK ERASE; ALSO CONFIGURABLE AS 256K X 16		e0			NOR TYPE		18.4 mm		90 ns	5
TC58FVB400F-12	Toshiba	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	40 mA	4194304 words	5	YES	3/3.3	8	SMALL OUTLINE	SOP44,.63	8	Flash Memories	1.27 mm	85 Cel	3-STATE	4MX8	4M	-40 Cel	1,2,1,7	YES	Tin/Lead (Sn/Pb)	YES	DUAL	R-PDSO-G44	5.5 V	3.1 mm	100000 Write/Erase Cycles		12.6 mm	Not Qualified	BOTTOM	33554432 bit	4.5 V			e0			NOR TYPE	.00001 Amp	28.2 mm		35 ns	3	YES
TC58DAM82A1XBJ4	Toshiba	FLASH	INDUSTRIAL	56	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		16K	30 mA	33554432 words		NO	1.8,3.3	8	GRID ARRAY, FINE PITCH	BGA56,8X12,32		Flash Memories	.8 mm	85 Cel		32MX8	32M	-40 Cel	2K	YES	Tin/Lead (Sn/Pb)	YES	BOTTOM	R-PBGA-B56						Not Qualified		268435456 bit			512	e0				.00005 Amp			35 ns		NO
THGBMAG8B4JBAAM	Toshiba	FLASH CARD	INDUSTRIAL	169		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL					34359738368 words				8						85 Cel		32GX8	32G	-40 Cel					BOTTOM	R-PBGA-B169	3.6 V							274877906944 bit	2.7 V						NAND TYPE
TC58FYB160FT-15	Toshiba	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	40 mA	2097152 words	1.8	YES	1.8/2.7	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel		2MX8	2M	-40 Cel	1,2,1,31	YES	Tin/Lead (Sn/Pb)	YES	DUAL	R-PDSO-G48	2.7 V	1.2 mm			12 mm	Not Qualified	BOTTOM	16777216 bit	1.8 V	USER CONFIGURABLE 1M X 16		e0			NOR TYPE	.00002 Amp	18.4 mm		150 ns	1.8	YES
TC58NS128BDC	Toshiba	FLASH CARD	COMMERCIAL	22		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED	SERIAL	ASYNCHRONOUS			16777216 words	3.3			8	MICROELECTRONIC ASSEMBLY					55 Cel		16MX8	16M	0 Cel			TIN LEAD		UNSPECIFIED	R-XXMA-X22	3.6 V					Not Qualified		134217728 bit	3 V			e0								3.3
TC58F4000FT-12	Toshiba	FLASH	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	5			8	SMALL OUTLINE, THIN PROFILE				.5 mm	70 Cel	3-STATE	512KX8	512K	0 Cel			TIN LEAD		DUAL	R-PDSO-G32	5.25 V	1.2 mm			7.9 mm	Not Qualified		4194304 bit	4.75 V	BULK ERASE; 10K ERASE/WRITE CYCLES MIN.		e0			NOR TYPE		18.4 mm		120 ns	12
TC58DYM92A5BAJ3	Toshiba	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	ASYNCHRONOUS			67108864 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.8 mm	85 Cel		64MX8	64M	-40 Cel					BOTTOM	R-PBGA-B63	1.95 V	1 mm			8.5 mm			536870912 bit	1.7 V								13 mm			1.8
TC58FVB800FT-85	Toshiba	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	40 mA	1048576 words	3.3	YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel	3-STATE	1MX8	1M	-40 Cel	1,2,1,15	YES	Tin/Lead (Sn/Pb)	YES	DUAL	R-PDSO-G48	3.6 V	1.2 mm	100000 Write/Erase Cycles		12 mm	Not Qualified	BOTTOM	8388608 bit	3 V			e0			NOR TYPE	.00001 Amp	18.4 mm		85 ns	3	YES
TC58FYT016FT-15	Toshiba	FLASH	INDUSTRIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	40 mA	2097152 words	1.8	YES	1.8/2.7	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories	.5 mm	85 Cel		2MX8	2M	-40 Cel	1,2,1,31	YES	Tin/Lead (Sn/Pb)	YES	DUAL	R-PDSO-G40	2.7 V	1.2 mm			10 mm	Not Qualified	TOP	16777216 bit	1.8 V			e0			NOR TYPE	.00002 Amp	18.4 mm		150 ns	1.8	YES
TC58FYB160FT-12	Toshiba	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	40 mA	2097152 words	1.8	YES	1.8/2.7	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel		2MX8	2M	-40 Cel	1,2,1,31	YES	Tin/Lead (Sn/Pb)	YES	DUAL	R-PDSO-G48	2.7 V	1.2 mm			12 mm	Not Qualified	BOTTOM	16777216 bit	1.8 V	USER CONFIGURABLE 1M X 16		e0			NOR TYPE	.00002 Amp	18.4 mm		120 ns	1.8	YES
TC58DYM92A5TA00	Toshiba	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	ASYNCHRONOUS			67108864 words	1.8			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.5 mm	85 Cel		64MX8	64M	-40 Cel					DUAL	R-PDSO-G48	1.95 V	1.2 mm						536870912 bit	1.7 V								18.4 mm			1.8
THGBMHG9C8LBAB8	Toshiba	FLASH	INDUSTRIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	ASYNCHRONOUS			68719476736 words				8	GRID ARRAY		4			105 Cel		64GX8	64G	-40 Cel					BOTTOM	R-PBGA-B153	3.6 V							549755813888 bit	2.7 V	ALSO ORGANISED AS 512GX1										2.7
TC58F1000F-20(TP1)	Toshiba	FLASH	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			131072 words	5			8	SMALL OUTLINE				1.27 mm	70 Cel	3-STATE	128KX8	128K	0 Cel			TIN LEAD		DUAL	R-PDSO-G32	5.5 V	2.8 mm			10.7 mm	Not Qualified		1048576 bit	4.5 V			e0			NOR TYPE		20.6 mm		200 ns	12
TC58FVT016-10	Toshiba	FLASH	INDUSTRIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			2097152 words	3			8	SMALL OUTLINE, THIN PROFILE				.5 mm	85 Cel		2MX8	2M	-40 Cel					DUAL	R-PDSO-G40	3.6 V	1.2 mm			10 mm	Not Qualified	TOP	16777216 bit	2.7 V						NOR TYPE		18.4 mm		100 ns	3
TC58NVG1S8BFT00	Toshiba	FLASH	COMMERCIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL		64K	30 mA	134217728 words		NO	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories	.5 mm	70 Cel		128MX16	128M	0 Cel	2K	YES		YES	DUAL	R-PDSO-G48						Not Qualified		2147483648 bit			1K					.00005 Amp			45 ns		NO
THGBMAG5A1JBAAR	Toshiba	FLASH CARD	INDUSTRIAL	153		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL					4294967296 words				8						85 Cel		4GX8	4G	-40 Cel					BOTTOM	R-PBGA-B153	3.6 V							34359738368 bit	2.7 V						NAND TYPE
TC58FVB641FT-10	Toshiba	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	8K,64K	45 mA	4194304 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel		4MX16	4M	-40 Cel	8,127	YES		YES	DUAL	R-PDSO-G48	3.6 V	1.2 mm			12 mm	Not Qualified	BOTTOM	67108864 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00001 Amp	18.4 mm	YES	100 ns	3	YES
TC58FVT160AXG-10	Toshiba	FLASH	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			1048576 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH		8		.8 mm	85 Cel		1MX16	1M	-40 Cel					BOTTOM	R-PBGA-B48	3.6 V	1.2 mm			6 mm	Not Qualified	TOP	16777216 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE		8 mm		100 ns	3
TC58FVT160AXB-10	Toshiba	FLASH	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	1048576 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	85 Cel		1MX16	1M	-40 Cel	1,2,1,31	YES		YES	BOTTOM	R-PBGA-B48	3.6 V	1.2 mm			6 mm	Not Qualified	TOP	16777216 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp	8 mm	YES	100 ns	3	YES
TC58DYG02A5TAI0	Toshiba	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	ASYNCHRONOUS			134217728 words	1.8			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.5 mm	85 Cel		128MX8	128M	-40 Cel					DUAL	R-PDSO-G48	1.95 V	1.2 mm						1073741824 bit	1.7 V								18.4 mm			1.8
THGBMJG7C2LBAB8	Toshiba	FLASH MODULE	INDUSTRIAL	153	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS			17179869184 words	3.3			8	GRID ARRAY, THIN PROFILE, FINE PITCH				.5 mm	105 Cel		16GX8	16G	-40 Cel					BOTTOM	R-PBGA-B153	3.6 V	1.2 mm		52 MHz	11.5 mm			137438953472 bit	2.7 V								13 mm			3.3
THGBM5G8A4JBAIM	Toshiba	FLASH CARD	OTHER	169		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL					34359738368 words				8						85 Cel		32GX8	32G	-25 Cel					BOTTOM	R-PBGA-B169	3.6 V							274877906944 bit	2.7 V											2.7
TC58NYG2S0FBAI4	Toshiba	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	256K	30 mA	536870912 words	1.8	YES	1.8	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories	.8 mm	85 Cel		512MX8	512M	-40 Cel	2K	YES		YES	BOTTOM	R-PBGA-B63	1.95 V	1 mm			9 mm	Not Qualified		4294967296 bit	1.7 V		4K					.00005 Amp	11 mm		25 ns	1.8	YES
TC58DVM92A3BAJW	Toshiba
TC58FVB160FT-12	Toshiba	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	40 mA	1048576 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel		1MX16	1M	-40 Cel	1,2,1,31	YES		YES	DUAL	R-PDSO-G48	3.6 V	1.2 mm			12 mm	Not Qualified	BOTTOM	16777216 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp	18.4 mm		120 ns	3	YES
TC58NYM9S3EBAI3	Toshiba	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	ASYNCHRONOUS			67108864 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.8 mm	85 Cel		64MX8	64M	-40 Cel					BOTTOM	R-PBGA-B63	1.95 V	1 mm			8.5 mm			536870912 bit	1.7 V								13 mm			1.8
TC58F010FT-12	Toshiba	FLASH	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			131072 words	5			8	SMALL OUTLINE, THIN PROFILE				.5 mm	70 Cel	3-STATE	128KX8	128K	0 Cel			TIN LEAD		DUAL	R-PDSO-G32	5.25 V	1.2 mm			7.9 mm	Not Qualified		1048576 bit	4.75 V	BULK ERASE; 10K ERASE/WRITE CYCLES MIN.		e0			NOR TYPE		18.4 mm		120 ns	12
TC58FVM7B2AFT80	Toshiba	FLASH	INDUSTRIAL	56	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	8K,64K	70 mA	8388608 words	3	YES	2.5/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP56,.8,20	8	Flash Memories	.5 mm	85 Cel		8MX16	8M	-40 Cel	8, 255	YES		YES	DUAL	R-PDSO-G56	3.6 V	1.2 mm			14 mm	Not Qualified	BOTTOM	134217728 bit	2.3 V		8/16		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00001 Amp	18.4 mm	YES	75 ns	3	YES
TC58NYG0S3ETA00	Toshiba	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	ASYNCHRONOUS			134217728 words	1.8			8	SMALL OUTLINE, THIN PROFILE				.5 mm	85 Cel		128MX8	128M	-40 Cel					DUAL	R-PDSO-G48	1.95 V	1.2 mm			12 mm			1073741824 bit	1.7 V								18.4 mm			1.8
TC58FVT400FT-85	Toshiba	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	40 mA	524288 words	3.3	YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories	.5 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	1,2,1,7	YES	Tin/Lead (Sn/Pb)	YES	DUAL	R-PDSO-G48	3.6 V	1.2 mm	100000 Write/Erase Cycles		12 mm	Not Qualified	TOP	4194304 bit	3 V			e0			NOR TYPE	.00001 Amp	18.4 mm		85 ns	3	YES
TC58F400FTI-10	Toshiba	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	50 mA	524288 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel		512KX8	512K	-40 Cel	1,2,1,7	YES	Tin/Lead (Sn/Pb)	YES	DUAL	R-PDSO-G48	5.5 V	1.2 mm	100000 Write/Erase Cycles		12 mm	Not Qualified	BOTTOM	4194304 bit	4.5 V	USER CONFIGURABLE AS 256K X 16		e0			NOR TYPE	.0001 Amp	18.4 mm		100 ns	5	YES
TC58FVM5T2AXB65	Toshiba	FLASH	INDUSTRIAL	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	8K,64K	70 mA	2097152 words	3	YES	2.5/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA56,8X12,32	8	Flash Memories	.8 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES		YES	BOTTOM	R-PBGA-B56	3.6 V	1.2 mm			7 mm	Not Qualified	TOP	33554432 bit	2.3 V		8/16		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00001 Amp	10 mm	YES	75 ns	3	YES
TC58FVT160AFT-10	Toshiba	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	1048576 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel		1MX16	1M	-40 Cel	1,2,1,31	YES		YES	DUAL	R-PDSO-G48	3.6 V	1.2 mm			12 mm	Not Qualified	TOP	16777216 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp	18.4 mm	YES	100 ns	3	YES
TC58C256AFTI	Toshiba	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL		16K	45 mA	33554432 words		NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories	.5 mm	85 Cel		32MX8	32M	-40 Cel	2K	NO			DUAL	R-PDSO-G48						Not Qualified		268435456 bit			512					.00004 Amp		YES	103 ns		NO
THGBM5G8B4JBAIM	Toshiba	FLASH CARD	OTHER	169		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL					34359738368 words				8						85 Cel		32GX8	32G	-25 Cel					BOTTOM	R-PBGA-B169	3.6 V							274877906944 bit	2.7 V						NAND TYPE					2.7
TC58NVG0S3AFT00	Toshiba	FLASH	COMMERCIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL		128K	30 mA	134217728 words		NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories	.5 mm	70 Cel		128MX8	128M	0 Cel	1K	YES		YES	DUAL	R-PDSO-G48						Not Qualified		1073741824 bit			2K					.00005 Amp			45 ns		NO
TC58FVB160FT-85	Toshiba	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	40 mA	1048576 words	3.3	YES	3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel		1MX16	1M	-40 Cel	1,2,1,31	YES		YES	DUAL	R-PDSO-G48	3.6 V	1.2 mm			12 mm	Not Qualified	BOTTOM	16777216 bit	3 V						NOR TYPE	.000005 Amp	18.4 mm		85 ns	3	YES
TC58FVB400FT-85	Toshiba	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	40 mA	524288 words	3.3	YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories	.5 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	1,2,1,7	YES	Tin/Lead (Sn/Pb)	YES	DUAL	R-PDSO-G48	3.6 V	1.2 mm	100000 Write/Erase Cycles		12 mm	Not Qualified	BOTTOM	4194304 bit	3 V			e0			NOR TYPE	.00001 Amp	18.4 mm		85 ns	3	YES
TC58F4000TR-15	Toshiba	FLASH	COMMERCIAL	32	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	5			8	SMALL OUTLINE, THIN PROFILE				.5 mm	70 Cel	3-STATE	512KX8	512K	0 Cel			TIN LEAD		DUAL	R-PDSO-G32	5.25 V	1.2 mm			7.9 mm	Not Qualified		4194304 bit	4.75 V	BULK ERASE; 10K ERASE/WRITE CYCLES MIN.		e0			NOR TYPE		18.4 mm		150 ns	12
TC58F400FT-10	Toshiba	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	5			8	SMALL OUTLINE, THIN PROFILE				.5 mm	70 Cel		512KX8	512K	0 Cel			Tin/Lead (Sn/Pb)		DUAL	R-PDSO-G48	5.5 V	1.2 mm			12 mm	Not Qualified	BOTTOM	4194304 bit	4.5 V	100000 ERASE/PROGRAM CYCLES; BLOCK ERASE; ALSO CONFIGURABLE AS 256K X 16		e0			NOR TYPE		18.4 mm		100 ns	5

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.