Toshiba Flash Memory 776

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
TC58FVT321FT-70	Toshiba	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	8K,64K	45 mA	2097152 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES		YES	DUAL	R-PDSO-G48	3.6 V	1.2 mm			12 mm	Not Qualified	TOP	33554432 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00001 Amp	18.4 mm	YES	80 ns	3	YES
TC58FYM5B3AXB70	Toshiba	FLASH	INDUSTRIAL	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	8K,64K	80 mA	2097152 words	1.8	YES	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA56,8X12,32	8	Flash Memories	.8 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES	Tin/Lead (Sn/Pb)	YES	BOTTOM	R-PBGA-B56	1.95 V	1.2 mm			7 mm	Not Qualified	BOTTOM	33554432 bit	1.7 V		8/16	e0			NOR TYPE	.000025 Amp	10 mm	YES	80 ns	3	YES
TC58FBT016FT-85	Toshiba
THGBMJG6C1LBAB7	Toshiba	FLASH MODULE	INDUSTRIAL	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS			8589934592 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	105 Cel		8GX8	8G	-40 Cel					BOTTOM	R-PBGA-B153	3.6 V	1 mm		52 MHz	11.5 mm			68719476736 bit	2.7 V								13 mm			3.3
TC58NVG5H2HTA00	Toshiba	FLASH																																																		SLC NAND TYPE					3.3
TC58NVG0S3HTA00	Toshiba	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			134217728 words	3.3			8	SMALL OUTLINE, THIN PROFILE				.5 mm	70 Cel		128MX8	128M	0 Cel					DUAL	R-PDSO-G48	3.6 V	1.2 mm			12 mm			1073741824 bit	2.7 V						SLC NAND TYPE		18.4 mm			3.3
TC58BYG0S3HBAI6	Toshiba	FLASH	INDUSTRIAL	67	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			134217728 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.8 mm	85 Cel		128MX8	128M	-40 Cel					BOTTOM	R-PBGA-B67	1.95 V	1 mm			6.5 mm			1073741824 bit	1.7 V								8 mm			1.8
TC5816ADC	Toshiba	FLASH	COMMERCIAL	22		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED	SERIAL	ASYNCHRONOUS			2097152 words	5			8	MICROELECTRONIC ASSEMBLY					55 Cel		2MX8	2M	0 Cel					UNSPECIFIED	R-XXMA-X22	5.5 V					Not Qualified		16777216 bit	4.5 V											5
TC58FYM5T2AFT70	Toshiba	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	8K,64K	80 mA	2097152 words	1.8	YES	1.8	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES	TIN LEAD	YES	DUAL	R-PDSO-G48	1.95 V	1.2 mm			12 mm	Not Qualified	TOP	33554432 bit	1.7 V		8/16	e0			NOR TYPE	.000025 Amp	18.4 mm	YES	80 ns	3	YES
TC58FYT160FT-15	Toshiba	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	40 mA	2097152 words	1.8	YES	1.8/2.7	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel		2MX8	2M	-40 Cel	1,2,1,31	YES	Tin/Lead (Sn/Pb)	YES	DUAL	R-PDSO-G48	2.7 V	1.2 mm			12 mm	Not Qualified	TOP	16777216 bit	1.8 V	USER CONFIGURABLE 1M X 16		e0			NOR TYPE	.00002 Amp	18.4 mm		150 ns	1.8	YES
TC58FVM5B2AXB65	Toshiba	FLASH	INDUSTRIAL	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	8K,64K	70 mA	2097152 words	3	YES	2.5/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA56,8X12,32	8	Flash Memories	.8 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES		YES	BOTTOM	R-PBGA-B56	3.6 V	1.2 mm			7 mm	Not Qualified	BOTTOM	33554432 bit	2.3 V		8/16		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00001 Amp	10 mm	YES	75 ns	3	YES
THGBMAG9A8JBA4G	Toshiba	FLASH CARD	OTHER	153		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL					68719476736 words				8						85 Cel		64GX8	64G	-25 Cel					BOTTOM	R-PBGA-B153	3.6 V							549755813888 bit	2.7 V						NAND TYPE					2.7
TC58F010TR-10	Toshiba	FLASH	COMMERCIAL	32	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			131072 words	5			8	SMALL OUTLINE, THIN PROFILE				.5 mm	70 Cel	3-STATE	128KX8	128K	0 Cel			TIN LEAD		DUAL	R-PDSO-G32	5.25 V	1.2 mm			7.9 mm	Not Qualified		1048576 bit	4.75 V	BULK ERASE; 10K ERASE/WRITE CYCLES MIN.		e0			NOR TYPE		18.4 mm		100 ns	12
TC58FVT016-12	Toshiba	FLASH	INDUSTRIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			2097152 words	3			8	SMALL OUTLINE, THIN PROFILE				.5 mm	85 Cel		2MX8	2M	-40 Cel					DUAL	R-PDSO-G40	3.6 V	1.2 mm			10 mm	Not Qualified	TOP	16777216 bit	2.7 V						NOR TYPE		18.4 mm		120 ns	3
TC58FVB800FT-10	Toshiba	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	40 mA	1048576 words		YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel	3-STATE	1MX8	1M	-40 Cel	1,2,1,15	YES	Tin/Lead (Sn/Pb)	YES	DUAL	R-PDSO-G48	3.6 V	1.2 mm	100000 Write/Erase Cycles		12 mm	Not Qualified	BOTTOM	8388608 bit	2.7 V			e0			NOR TYPE	.00001 Amp	18.4 mm		100 ns	3	YES
TC58FVM5B3AFT65	Toshiba	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	8K,64K	70 mA	2097152 words	3	YES	2.5/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES		YES	DUAL	R-PDSO-G48	3.6 V	1.2 mm			12 mm	Not Qualified	BOTTOM	33554432 bit	2.3 V		8/16		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00001 Amp	18.4 mm	YES	75 ns	3	YES
THGBM7G8T4JBAIR	Toshiba	FLASH CARD	OTHER	153		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL					34359738368 words				8						85 Cel		32GX8	32G	-25 Cel					BOTTOM	R-PBGA-B153	3.6 V							274877906944 bit	2.7 V						NAND TYPE					2.7
TC58F400FT-90	Toshiba	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	5			8	SMALL OUTLINE, THIN PROFILE				.5 mm	70 Cel		512KX8	512K	0 Cel			Tin/Lead (Sn/Pb)		DUAL	R-PDSO-G48	5.5 V	1.2 mm			12 mm	Not Qualified	BOTTOM	4194304 bit	4.5 V	100000 ERASE/PROGRAM CYCLES; BLOCK ERASE; ALSO CONFIGURABLE AS 256K X 16		e0			NOR TYPE		18.4 mm		90 ns	5
TC58BYG1S3HBAI4	Toshiba	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			268435456 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.8 mm	85 Cel		256MX8	256M	-40 Cel					BOTTOM	R-PBGA-B63	1.95 V	1 mm			9 mm			2147483648 bit	1.7 V								11 mm			1.8
TC58DVM92A5TAI0	Toshiba	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			67108864 words	3.3			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.5 mm	85 Cel		64MX8	64M	-40 Cel					DUAL	R-PDSO-G48	3.6 V	1.2 mm						536870912 bit	2.7 V								18.4 mm			3.3
TC58FYM5T3AXB70	Toshiba	FLASH	INDUSTRIAL	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	8K,64K	80 mA	2097152 words	1.8	YES	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA56,8X12,32	8	Flash Memories	.8 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES	Tin/Lead (Sn/Pb)	YES	BOTTOM	R-PBGA-B56	1.95 V	1.2 mm			7 mm	Not Qualified	TOP	33554432 bit	1.7 V		8/16	e0			NOR TYPE	.000025 Amp	10 mm	YES	80 ns	3	YES
TC58FVM5B2ATG65	Toshiba	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	8K,64K	70 mA	2097152 words	3	YES	2.5/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel	3-STATE	2MX16	2M	-40 Cel	8,63	YES		YES	DUAL	R-PDSO-G48	3.6 V	1.2 mm	100000 Write/Erase Cycles		12 mm	Not Qualified	BOTTOM	33554432 bit	2.3 V						NOR TYPE	.00001 Amp	18.4 mm	YES	65 ns	3	YES
TC58FVM5T2AFT65	Toshiba	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	8K,64K	70 mA	2097152 words	3	YES	2.5/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES		YES	DUAL	R-PDSO-G48	3.6 V	1.2 mm			12 mm	Not Qualified	TOP	33554432 bit	2.3 V		8/16		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00001 Amp	18.4 mm	YES	75 ns	3	YES
TC58F1001P-15	Toshiba	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL		4K	30 mA	131072 words	5	NO	5	8	IN-LINE	DIP32,.6		Flash Memories	2.54 mm	70 Cel		128KX8	128K	0 Cel	32	YES	Tin/Lead (Sn/Pb)		DUAL	R-PDIP-T32						Not Qualified		1048576 bit				e0			NOR TYPE	.0001 Amp			150 ns		NO
TC58FVB160ATG-70	Toshiba	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3			16	SMALL OUTLINE, THIN PROFILE		8		.5 mm	85 Cel		1MX16	1M	-40 Cel					DUAL	R-PDSO-G48	3.6 V	1.2 mm			12 mm	Not Qualified	BOTTOM	16777216 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE		18.4 mm		70 ns	3
TC58F401FI-90	Toshiba	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	50 mA	524288 words	5	YES	5	8	SMALL OUTLINE	SOP44,.63	8	Flash Memories	1.27 mm	85 Cel		512KX8	512K	-40 Cel	1,2,1,7	YES	Tin/Lead (Sn/Pb)	YES	DUAL	R-PDSO-G44	5.5 V	3.1 mm	100000 Write/Erase Cycles		12.6 mm	Not Qualified	TOP	4194304 bit	4.5 V	USER CONFIGURABLE AS 256K X 16		e0			NOR TYPE	.0001 Amp	28.2 mm		90 ns	5	YES
TC58FYM6B2AXB70	Toshiba	FLASH	INDUSTRIAL	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	8K,64K	80 mA	4194304 words	1.8	YES	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA56,8X12,32	8	Flash Memories	.8 mm	85 Cel		4MX16	4M	-40 Cel	8,127	YES	Tin/Lead (Sn/Pb)	YES	BOTTOM	R-PBGA-B56	1.95 V	1.2 mm			7 mm	Not Qualified	BOTTOM	67108864 bit	1.7 V		8/16	e0			NOR TYPE	.000025 Amp	10 mm	YES	80 ns	3	YES
TC58FVT016FT-10	Toshiba	FLASH	INDUSTRIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	40 mA	2097152 words	3	YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories	.5 mm	85 Cel		2MX8	2M	-40 Cel	1,2,1,31	YES	Tin/Lead (Sn/Pb)	YES	DUAL	R-PDSO-G40	3.6 V	1.2 mm			10 mm	Not Qualified	TOP	16777216 bit	2.7 V			e0			NOR TYPE	.00001 Amp	18.4 mm		100 ns	3	YES
TC58NVG3S0DTG00	Toshiba
TC58FVT400F-85	Toshiba	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	40 mA	524288 words	3.3	YES	3/3.3	8	SMALL OUTLINE	SOP44,.63	8	Flash Memories	1.27 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	1,2,1,7	YES	Tin/Lead (Sn/Pb)	YES	DUAL	R-PDSO-G44	3.6 V	3.1 mm	100000 Write/Erase Cycles		12.6 mm	Not Qualified	TOP	4194304 bit	3 V			e0			NOR TYPE	.00001 Amp	28.2 mm		85 ns	3	YES
TC58FVM6B2AXB70	Toshiba	FLASH	INDUSTRIAL	56	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		8K,64K	80 mA	4194304 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA56,8X12,32	8	Flash Memories	.8 mm	85 Cel		4MX16	4M	-40 Cel	8,127	YES		YES	BOTTOM	R-PBGA-B56						Not Qualified	BOTTOM	67108864 bit			8/16				NOR TYPE	.000025 Amp		YES	70 ns		YES
THGBMAG6A2JBAAR	Toshiba	FLASH CARD	INDUSTRIAL	153		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL					8589934592 words				8						85 Cel		8GX8	8G	-40 Cel					BOTTOM	R-PBGA-B153	3.6 V							68719476736 bit	2.7 V						NAND TYPE
THGBM1G7D8EBAI0	Toshiba	FLASH	OTHER	169	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			8589934592 words	3.3			16	GRID ARRAY, LOW PROFILE, FINE PITCH				.5 mm	85 Cel		8GX16	8G	-25 Cel					BOTTOM	R-PBGA-B169	3.6 V	1.4 mm			12 mm	Not Qualified		137438953472 bit	2.7 V						MLC NAND TYPE		18 mm			3.3
THGBM1G5D2EBAI7	Toshiba	FLASH	OTHER	169	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			2147483648 words	3.3			16	GRID ARRAY, LOW PROFILE, FINE PITCH				.5 mm	85 Cel		2GX16	2G	-25 Cel					BOTTOM	R-PBGA-B169	3.6 V	1.3 mm			12 mm	Not Qualified		34359738368 bit	2.7 V						MLC NAND TYPE		16 mm			3.3
THGBM5G7A2JBAIR	Toshiba	FLASH CARD	OTHER	153		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL					17179869184 words				8						85 Cel		16GX8	16G	-25 Cel					BOTTOM	R-PBGA-B153	3.6 V							137438953472 bit	2.7 V						NAND TYPE					2.7
TC58FVB160AXG-10	Toshiba	FLASH	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			1048576 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH		8		.8 mm	85 Cel		1MX16	1M	-40 Cel					BOTTOM	R-PBGA-B48	3.6 V	1.2 mm			6 mm	Not Qualified	BOTTOM	16777216 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE		8 mm		100 ns	3
TC58FVB016FT-10	Toshiba	FLASH	INDUSTRIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	40 mA	2097152 words	3	YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories	.5 mm	85 Cel		2MX8	2M	-40 Cel	1,2,1,31	YES	Tin/Lead (Sn/Pb)	YES	DUAL	R-PDSO-G40	3.6 V	1.2 mm			10 mm	Not Qualified	BOTTOM	16777216 bit	2.7 V			e0			NOR TYPE	.00001 Amp	18.4 mm		100 ns	3	YES
TC58NYG0S3HBAI4_REEL	Toshiba	FLASH																																																		SLC NAND TYPE					1.8
TC58FVT400FT-12	Toshiba	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	40 mA	4194304 words	5	YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel	3-STATE	4MX8	4M	-40 Cel	1,2,1,7	YES	Tin/Lead (Sn/Pb)	YES	DUAL	R-PDSO-G48	5.5 V	1.2 mm	100000 Write/Erase Cycles		12 mm	Not Qualified	TOP	33554432 bit	4.5 V			e0			NOR TYPE	.00001 Amp	18.4 mm		35 ns	3	YES
TC58128AFTI(EL)	Toshiba	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL		16K	30 mA	16777216 words		NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories	.5 mm	85 Cel		16MX8	16M	-40 Cel	1K	YES		YES	DUAL	R-PDSO-G48						Not Qualified		134217728 bit			512					.0001 Amp			35 ns		NO
TC58FVT160ATG-70	Toshiba	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3			16	SMALL OUTLINE, THIN PROFILE		8		.5 mm	85 Cel		1MX16	1M	-40 Cel					DUAL	R-PDSO-G48	3.6 V	1.2 mm			12 mm	Not Qualified	TOP	16777216 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE		18.4 mm		70 ns	3
TC58FVM6T5BXG65	Toshiba	FLASH	INDUSTRIAL	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA56,8X12,32		Flash Memories	.8 mm	85 Cel		4MX16	4M	-40 Cel	8,127	YES		YES	BOTTOM	R-PBGA-B56	3.6 V	1.2 mm			7 mm	Not Qualified	TOP	67108864 bit	2.7 V		8		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00001 Amp	10 mm	YES	65 ns	3	YES
TC58NVG1S3HTA00	Toshiba	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			268435456 words	3.3			8	SMALL OUTLINE, THIN PROFILE				.5 mm	70 Cel		256MX8	256M	0 Cel					DUAL	R-PDSO-G48	3.6 V	1.2 mm			12 mm			2147483648 bit	2.7 V				10	260	SLC NAND TYPE		18.4 mm			3.3
TC58FVT400F-10	Toshiba	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	40 mA	4194304 words	5	YES	3/3.3	8	SMALL OUTLINE	SOP44,.63	8	Flash Memories	1.27 mm	85 Cel	3-STATE	4MX8	4M	-40 Cel	1,2,1,7	YES	Tin/Lead (Sn/Pb)	YES	DUAL	R-PDSO-G44	5.5 V	3.1 mm	100000 Write/Erase Cycles		12.6 mm	Not Qualified	TOP	33554432 bit	4.5 V			e0			NOR TYPE	.00001 Amp	28.2 mm		35 ns	3	YES
TC58FVT004FT-12	Toshiba	FLASH	INDUSTRIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	40 mA	4194304 words	5	YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories	.5 mm	85 Cel	3-STATE	4MX8	4M	-40 Cel	1,2,1,7	YES	Tin/Lead (Sn/Pb)	YES	DUAL	R-PDSO-G40	5.5 V	1.2 mm	100000 Write/Erase Cycles		10 mm	Not Qualified	TOP	33554432 bit	4.5 V			e0			NOR TYPE	.00001 Amp	18.4 mm		35 ns	3	YES
TC58FVB016-10	Toshiba	FLASH	INDUSTRIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			2097152 words	3			8	SMALL OUTLINE, THIN PROFILE				.5 mm	85 Cel		2MX8	2M	-40 Cel					DUAL	R-PDSO-G40	3.6 V	1.2 mm			10 mm	Not Qualified	BOTTOM	16777216 bit	2.7 V						NOR TYPE		18.4 mm		100 ns	3
TC58FVT641FT-70	Toshiba	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	8K,64K	45 mA	4194304 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel		4MX16	4M	-40 Cel	8,127	YES		YES	DUAL	R-PDSO-G48	3.6 V	1.2 mm			12 mm	Not Qualified	TOP	67108864 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00001 Amp	18.4 mm	YES	80 ns	3	YES
TC58FYT016FT-12	Toshiba	FLASH	INDUSTRIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	40 mA	2097152 words	1.8	YES	1.8/2.7	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories	.5 mm	85 Cel		2MX8	2M	-40 Cel	1,2,1,31	YES	Tin/Lead (Sn/Pb)	YES	DUAL	R-PDSO-G40	2.7 V	1.2 mm			10 mm	Not Qualified	TOP	16777216 bit	1.8 V			e0			NOR TYPE	.00002 Amp	18.4 mm		120 ns	1.8	YES

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.