PHOTO DARLINGTON Phototransistors 47

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Part	Manufacturer	Optoelectronic Type	Mounting Feature	Terminal Finish	Configuration	Size	Maximum Dark Current	No. of Functions	Infrared (IR) Range	Peak Wavelength (nm)	Maximum Response Time	Sub-Category	Maximum Operating Temperature	Shape	Minimum Operating Temperature	Minimum Collector-emitter Breakdown Voltage	Maximum Power Dissipation	Additional Features	Nominal Light Current	JESD-609 Code	Maximum On State Current
3123	Nte Electronics	PHOTO DARLINGTON			SINGLE	2.5 mm	10000 nA	1						ROUND		35 V			.2 mA
SD5410-002	Honeywell Sensing And Control	PHOTO DARLINGTON	THROUGH HOLE MOUNT				250 nA				.000015 s	Photo Transistors	125 Cel		-55 Cel		.15 W
NTE3122	Nte Electronics	PHOTO DARLINGTON	THROUGH HOLE MOUNT		SINGLE		1000 nA	1	YES	860	.00008 s	Photo Transistors	85 Cel	ROUND	-25 Cel	35 V	.075 W				.05 A
PT481E00000F	Sharp Corporation	PHOTO DARLINGTON		Tin/Silver/Copper (Sn/Ag/Cu)	SINGLE	1.6 mm	1000 nA	1	YES	800			85 Cel	ROUND	-25 Cel	35 V		SIDE VIEW	10 mA	e1
PT481FE0000F	Sharp Corporation	PHOTO DARLINGTON		Tin/Silver/Copper (Sn/Ag/Cu)	SINGLE	1.6 mm	1000 nA	1	YES	860			85 Cel	ROUND	-25 Cel	35 V		SIDE VIEW	.9 mA	e1
SD3410-001	Honeywell Sensing And Control	PHOTO DARLINGTON	THROUGH HOLE MOUNT				250 nA				.000075 s	Photo Transistors	125 Cel		-55 Cel		.15 W
SDP8106-001	Honeywell Sensing And Control	PHOTO DARLINGTON	THROUGH HOLE MOUNT				250 nA				.000075 s	Photo Transistors	100 Cel		-40 Cel		.1 W
2N5777	Motorola	PHOTO DARLINGTON		Tin/Lead (Sn/Pb)	SINGLE		100 nA	1	YES	800						25 V			4 mA	e0
TIL416	Texas Instruments	PHOTO DARLINGTON	THROUGH HOLE MOUNT				100 nA			930	.001 s	Photo Transistors	85 Cel		-40 Cel		.05 W				.0001 A
TIL412	Texas Instruments	PHOTO DARLINGTON	THROUGH HOLE MOUNT				100 nA				.001 s	Photo Transistors	85 Cel		-40 Cel						.0001 A
SPS203C	Onsemi	PHOTO DARLINGTON	THROUGH HOLE MOUNT				1000 nA			850	.00003 s	Photo Transistors	100 Cel		-25 Cel		.05 W				.05 A
SPS235C	Onsemi	PHOTO DARLINGTON	THROUGH HOLE MOUNT				1000 nA			850	.00003 s	Photo Transistors	80 Cel		-25 Cel		.05 W				.03 A
SPS289C	Onsemi	PHOTO DARLINGTON	THROUGH HOLE MOUNT				1000 nA			850	.00003 s	Photo Transistors	80 Cel		-25 Cel		.05 W				.03 A
SPS281C	Onsemi	PHOTO DARLINGTON	THROUGH HOLE MOUNT				1000 nA			850	.00003 s	Photo Transistors	80 Cel		-25 Cel		.05 W				.03 A
QSE133	Onsemi	PHOTO DARLINGTON	THROUGH HOLE MOUNT	TIN	SINGLE	1.65 mm	100 nA	1	YES	880	.00002 s	Photo Transistors	100 Cel	ROUND	-40 Cel	30 V	.1 W	SIDE LOOKER	9 mA	e3
SFH501-2	Infineon Technologies	PHOTO DARLINGTON	THROUGH HOLE MOUNT	Tin/Lead (Sn/Pb)			50 nA			840	.00004 s	Photo Transistors	100 Cel		-55 Cel		.125 W			e0	.02 A
LPD80A	Infineon Technologies	PHOTO DARLINGTON	THROUGH HOLE MOUNT	Tin/Lead (Sn/Pb)			100 nA					Photo Transistors	100 Cel		-40 Cel		.1 W			e0
SFH501-1	Infineon Technologies	PHOTO DARLINGTON	THROUGH HOLE MOUNT	Tin/Lead (Sn/Pb)			50 nA			840	.000024 s	Photo Transistors	100 Cel		-55 Cel		.125 W			e0	.02 A
SFH3130F	Infineon Technologies	PHOTO DARLINGTON	THROUGH HOLE MOUNT	Tin/Lead (Sn/Pb)			50 nA			900		Photo Transistors	85 Cel		-40 Cel		.15 W			e0	.1 A
BPX89C	Infineon Technologies	PHOTO DARLINGTON	THROUGH HOLE MOUNT				200 nA				.000008 s	Photo Transistors	80 Cel		-40 Cel
TPS626(B)	Toshiba	PHOTO DARLINGTON			SINGLE	1.5 mm	250 nA	1	YES	870			85 Cel	ROUND	-25 Cel	30 V		HIGH SENSITIVITY; SIDE VIEW	1.7 mA
TPS607A	Toshiba	PHOTO DARLINGTON	THROUGH HOLE MOUNT	Tin/Lead (Sn/Pb)	SINGLE	1.5 mm	250 nA	1	NO	720		Photo Transistors	75 Cel	ROUND	-25 Cel	30 V	.075 W	HIGH SENSITIVITY; SIDE VIEW	2 mA	e0	.05 A
TPS626	Toshiba	PHOTO DARLINGTON	THROUGH HOLE MOUNT	Tin/Lead (Sn/Pb)	SINGLE	1.5 mm	250 nA	1	YES	870		Photo Transistors	85 Cel	ROUND	-25 Cel	30 V	.075 W	HIGH SENSITIVITY; SIDE VIEW	1.4 mA	e0	.04 A
TPS607A-A	Toshiba	PHOTO DARLINGTON			SINGLE	1.5 mm	250 nA	1	NO	720			75 Cel	ROUND	-25 Cel	30 V		HIGH SENSITIVITY; SIDE VIEW	.6 mA
TPS626(A)	Toshiba	PHOTO DARLINGTON			SINGLE	1.5 mm	250 nA	1	YES	870			85 Cel	ROUND	-25 Cel	30 V		HIGH SENSITIVITY; SIDE VIEW	.4 mA
TPS607A-B	Toshiba	PHOTO DARLINGTON			SINGLE	1.5 mm	250 nA	1	NO	720			75 Cel	ROUND	-25 Cel	30 V		HIGH SENSITIVITY; SIDE VIEW	2.5 mA
TPS617-B	Toshiba	PHOTO DARLINGTON			SINGLE	1.5 mm	250 nA	1	YES	870			75 Cel	ROUND	-25 Cel	30 V		HIGH SENSITIVITY; SIDE VIEW	1.7 mA
TPS605(LB)-A	Toshiba	PHOTO DARLINGTON			SINGLE	1.6 mm	250 nA	1	NO	720			70 Cel	ROUND	0 Cel	30 V		HIGH SENSITIVITY	.2 mA
TPS605(LB)-B	Toshiba	PHOTO DARLINGTON			SINGLE	1.6 mm	250 nA	1	NO	720			70 Cel	ROUND	0 Cel	30 V		HIGH SENSITIVITY	.8 mA
TPS625	Toshiba	PHOTO DARLINGTON	THROUGH HOLE MOUNT	Tin/Lead (Sn/Pb)	SINGLE	1.5 mm	250 nA	1	YES	820		Photo Transistors	85 Cel	ROUND	-25 Cel	30 V	.075 W	HIGH SENSITIVITY; SIDE VIEW	2 mA	e0	.04 A
TPS605-B	Toshiba	PHOTO DARLINGTON			SINGLE	1.6 mm	250 nA	1	NO	720			70 Cel	ROUND	0 Cel	30 V		DOUBLE END; HIGH SENSITIVITY	.8 mA
TPS605-A	Toshiba	PHOTO DARLINGTON			SINGLE	1.6 mm	250 nA	1	NO	720			70 Cel	ROUND	0 Cel	30 V		DOUBLE END; HIGH SENSITIVITY	.2 mA
TPS617-C	Toshiba	PHOTO DARLINGTON			SINGLE	1.5 mm	250 nA	1	YES	870			75 Cel	ROUND	-25 Cel	30 V		HIGH SENSITIVITY; SIDE VIEW	3 mA
TPS625(B)	Toshiba	PHOTO DARLINGTON			SINGLE	1.5 mm	250 nA	1	YES	820			85 Cel	ROUND	-25 Cel	30 V		HIGH SENSITIVITY; SIDE VIEW	2.5 mA
TPS617-A	Toshiba	PHOTO DARLINGTON			SINGLE	1.5 mm	250 nA	1	YES	870			75 Cel	ROUND	-25 Cel	30 V		HIGH SENSITIVITY; SIDE VIEW	.4 mA
TPS607A-C	Toshiba	PHOTO DARLINGTON			SINGLE	1.5 mm	250 nA	1	NO	720			75 Cel	ROUND	-25 Cel	30 V		HIGH SENSITIVITY; SIDE VIEW	5 mA
TPS625(C)	Toshiba	PHOTO DARLINGTON			SINGLE	1.5 mm	250 nA	1	YES	820			85 Cel	ROUND	-25 Cel	30 V		HIGH SENSITIVITY; SIDE VIEW	5 mA
TPS605	Toshiba	PHOTO DARLINGTON	SURFACE MOUNT	Tin/Lead (Sn/Pb)	SINGLE	1.6 mm	250 nA	1	NO	720		Photo Transistors	70 Cel	ROUND	0 Cel	30 V	.075 W	DOUBLE END; HIGH SENSITIVITY	1 mA	e0	.04 A
TPS625(A)	Toshiba	PHOTO DARLINGTON			SINGLE	1.5 mm	250 nA	1	YES	820			85 Cel	ROUND	-25 Cel	30 V		HIGH SENSITIVITY; SIDE VIEW	.6 mA
TPS617	Toshiba	PHOTO DARLINGTON	THROUGH HOLE MOUNT	Tin/Lead (Sn/Pb)	SINGLE	1.5 mm	250 nA	1	YES	870		Photo Transistors	75 Cel	ROUND	-25 Cel	30 V		HIGH SENSITIVITY; SIDE VIEW	1.4 mA	e0
TPS626(C)	Toshiba	PHOTO DARLINGTON			SINGLE	1.5 mm	250 nA	1	YES	870			85 Cel	ROUND	-25 Cel	30 V		HIGH SENSITIVITY; SIDE VIEW	3 mA
TPS605(LB)	Toshiba	PHOTO DARLINGTON			SINGLE	1.6 mm	250 nA	1	NO	720			70 Cel	ROUND	0 Cel	30 V		HIGH SENSITIVITY	1 mA
PH101	Renesas Electronics	PHOTO DARLINGTON	SURFACE MOUNT	Tin/Lead (Sn/Pb)	SINGLE	3.8 mm	500 nA	1		850		Photo Transistors	85 Cel	ROUND		20 V	.1 W	HIGH SENSITIVITY	12 mA	e0	.05 A
PH109	Renesas Electronics	PHOTO DARLINGTON	THROUGH HOLE MOUNT	Tin/Lead (Sn/Pb)			400 nA				.00002 s	Photo Transistors	80 Cel		-20 Cel		.1 W			e0	.05 A
PH107	Renesas Electronics	PHOTO DARLINGTON	THROUGH HOLE MOUNT	Tin/Lead (Sn/Pb)			400 nA					Photo Transistors	100 Cel				.1 W			e0	.05 A
L14R1	Renesas Electronics	PHOTO DARLINGTON	THROUGH HOLE MOUNT				100 nA			875	.000045 s	Photo Transistors	100 Cel		-55 Cel		.15 W
PH103	Renesas Electronics	PHOTO DARLINGTON	THROUGH HOLE MOUNT		SINGLE	5 mm	400 nA	1		860		Photo Transistors	80 Cel	RECTANGULAR	-20 Cel	30 V	.1 W		12 mA		.05 A

Phototransistors

A phototransistor is an electronic component that uses light to control the flow of electrical current. It is a type of bipolar transistor that is designed to respond to the presence of light by amplifying the current flowing through it. Phototransistors are widely used in a variety of applications, including in optical communication systems, photodetectors, and motion detectors.

Phototransistors work by using light to generate a flow of electrons that controls the flow of current through the transistor. When light hits the phototransistor, it causes electrons to be released, which flow through the transistor and control the current flowing through it. The current flowing through the transistor can be amplified and used to control other components in a circuit.