Part | RoHS | Manufacturer | RF or Microwave Device Type | Mounting Feature | No. of Terminals | Package Body Material | Technology | Screening Level | Total Dose (V) | Maximum Supply Voltage | No. of Functions | Maximum Input Power (CW) | Maximum Voltage Standing Wave Ratio | Maximum Supply Current | Construction | Power Supplies (V) | Package Equivalence Code | Characteristic Impedance | Sub-Category | Maximum Operating Temperature | Gain | Minimum Operating Temperature | Terminal Finish | Additional Features | JESD-609 Code | Minimum Operating Frequency | Maximum Operating Frequency |
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|
Renesas Electronics |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
1 |
18 dBm |
2 |
COMPONENT |
5 |
LCC16,.12SQ,20 |
50 ohm |
115 Cel |
13 dB |
-40 Cel |
TIN |
e3 |
400 MHz |
4200 MHz |
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|
Broadcom |
WIDE BAND MEDIUM POWER |
|||||||||||||||||||||||||
|
Broadcom |
WIDE BAND MEDIUM POWER |
23 dBm |
COMPONENT |
50 ohm |
8.5 dB |
Gold (Au) |
e4 |
2000 MHz |
35000 MHz |
|||||||||||||||||
|
Broadcom |
WIDE BAND MEDIUM POWER |
HYBRID |
1 |
23 dBm |
1000 mA |
COMPONENT |
5 |
DIE OR CHIP |
50 ohm |
RF/Microwave Amplifiers |
16.5 dB |
18000 MHz |
28000 MHz |
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|
Broadcom |
WIDE BAND MEDIUM POWER |
1 |
23 dBm |
COMPONENT |
3.5,5 |
DIE OR CHIP |
50 ohm |
RF/Microwave Amplifiers |
16.5 dB |
HIGH RELIABILITY |
17700 MHz |
32000 MHz |
||||||||||||||
Broadcom |
WIDE BAND MEDIUM POWER |
25 dBm |
COMPONENT |
50 ohm |
|||||||||||||||||||||||
|
Broadcom |
WIDE BAND MEDIUM POWER |
|||||||||||||||||||||||||
Broadcom |
WIDE BAND MEDIUM POWER |
GAAS |
25 dBm |
200 mA |
COMPONENT |
10 |
DIE OR CHIP |
50 ohm |
RF/Microwave Amplifiers |
||||||||||||||||||
|
Broadcom |
WIDE BAND MEDIUM POWER |
1 |
20 dBm |
COMPONENT |
5 |
DIE OR CHIP |
50 ohm |
RF/Microwave Amplifiers |
15 dB |
18000 MHz |
33000 MHz |
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|
Broadcom |
WIDE BAND MEDIUM POWER |
HYBRID |
1 |
20 dBm |
1050 mA |
COMPONENT |
5.5 |
DIE OR CHIP |
50 ohm |
RF/Microwave Amplifiers |
12 dB |
37000 MHz |
42000 MHz |
|||||||||||||
|
Broadcom |
WIDE BAND MEDIUM POWER |
23 dBm |
COMPONENT |
50 ohm |
16.5 dB |
18000 MHz |
28000 MHz |
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|
Broadcom |
WIDE BAND MEDIUM POWER |
1 |
20 dBm |
COMPONENT |
5 |
DIE OR CHIP |
50 ohm |
RF/Microwave Amplifiers |
16 dB |
6000 MHz |
18000 MHz |
|||||||||||||||
Broadcom |
WIDE BAND MEDIUM POWER |
GAAS |
25 dBm |
200 mA |
COMPONENT |
10 |
DIE OR CHIP |
50 ohm |
RF/Microwave Amplifiers |
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|
Broadcom |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
1 |
110 mA |
4.8 |
SOLCC8,.08,20 |
RF/Microwave Amplifiers |
Tin (Sn) |
e3 |
||||||||||||||
|
Broadcom |
WIDE BAND MEDIUM POWER |
|||||||||||||||||||||||||
|
Broadcom |
WIDE BAND MEDIUM POWER |
1 |
20 dBm |
COMPONENT |
5 |
DIE OR CHIP |
50 ohm |
RF/Microwave Amplifiers |
20 dB |
37000 MHz |
40000 MHz |
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Broadcom |
WIDE BAND MEDIUM POWER |
GAAS |
26 dBm |
300 mA |
COMPONENT |
10 |
DIE OR CHIP |
50 ohm |
RF/Microwave Amplifiers |
||||||||||||||||||
|
Broadcom |
WIDE BAND MEDIUM POWER |
1 |
23 dBm |
COMPONENT |
3.5,5 |
DIE OR CHIP |
50 ohm |
RF/Microwave Amplifiers |
16.5 dB |
HIGH RELIABILITY |
17700 MHz |
32000 MHz |
||||||||||||||
|
Broadcom |
WIDE BAND MEDIUM POWER |
23 dBm |
COMPONENT |
50 ohm |
16 dB |
25000 MHz |
33000 MHz |
|||||||||||||||||||
Broadcom |
WIDE BAND MEDIUM POWER |
||||||||||||||||||||||||||
Broadcom |
WIDE BAND MEDIUM POWER |
23 dBm |
COMPONENT |
50 ohm |
16.5 dB |
Tin/Lead (Sn/Pb) |
e0 |
17700 MHz |
32000 MHz |
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|
Broadcom |
WIDE BAND MEDIUM POWER |
23 dBm |
COMPONENT |
50 ohm |
16.5 dB |
6000 MHz |
18000 MHz |
|||||||||||||||||||
|
Broadcom |
WIDE BAND MEDIUM POWER |
1 |
23 dBm |
600 mA |
MODULE |
5 |
DIE OR CHIP |
50 ohm |
RF/Microwave Amplifiers |
18 dB |
20000 MHz |
45000 MHz |
||||||||||||||
|
Broadcom |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
1 |
24 dBm |
101 mA |
COMPONENT |
4.8 |
SOLCC8,.08,20 |
RF/Microwave Amplifiers |
16 dB |
Tin (Sn) |
e3 |
1500 MHz |
2500 MHz |
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|
Broadcom |
WIDE BAND MEDIUM POWER |
GAAS |
1 |
17 dBm |
350 mA |
COMPONENT |
7 |
DIE OR CHIP |
50 ohm |
RF/Microwave Amplifiers |
14 dB |
HIGH RELIABILITY |
.03 MHz |
40000 MHz |
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|
Broadcom |
WIDE BAND MEDIUM POWER |
HYBRID |
1 |
20 dBm |
1050 mA |
COMPONENT |
5.5 |
DIE OR CHIP |
50 ohm |
RF/Microwave Amplifiers |
12 dB |
37000 MHz |
42000 MHz |
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|
Broadcom |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
4 |
CERAMIC |
BIPOLAR |
25 dBm |
2.5 |
200 mA |
COMPONENT |
12 |
SL,4LEAD,.2CIRC |
50 ohm |
RF/Microwave Amplifiers |
7.5 dB |
Gold (Au) |
HIGH RELIABILITY |
e4 |
100 MHz |
2000 MHz |
|||||||
Broadcom |
WIDE BAND MEDIUM POWER |
25 dBm |
COMPONENT |
50 ohm |
|||||||||||||||||||||||
|
Broadcom |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
1 |
53 mA |
5 |
SOLCC8,.08,20 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
Tin (Sn) |
e3 |
||||||||||||
|
Broadcom |
WIDE BAND MEDIUM POWER |
23 dBm |
COMPONENT |
50 ohm |
16.5 dB |
6000 MHz |
18000 MHz |
|||||||||||||||||||
|
Broadcom |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
1 |
126 mA |
4.8 |
SOLCC8,.08,20 |
RF/Microwave Amplifiers |
Tin (Sn) |
e3 |
||||||||||||||
|
Broadcom |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
1 |
126 mA |
4.8 |
SOLCC8,.08,20 |
RF/Microwave Amplifiers |
Tin (Sn) |
e3 |
||||||||||||||
Broadcom |
WIDE BAND MEDIUM POWER |
26 dBm |
COMPONENT |
50 ohm |
|||||||||||||||||||||||
|
Broadcom |
WIDE BAND MEDIUM POWER |
1 |
20 dBm |
COMPONENT |
5 |
DIE OR CHIP |
50 ohm |
RF/Microwave Amplifiers |
15 dB |
18000 MHz |
33000 MHz |
|||||||||||||||
|
Broadcom |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
1 |
24 dBm |
101 mA |
COMPONENT |
4.8 |
SOLCC8,.08,20 |
RF/Microwave Amplifiers |
16 dB |
Tin (Sn) |
e3 |
1500 MHz |
2500 MHz |
|||||||||
|
Broadcom |
WIDE BAND MEDIUM POWER |
GAAS |
1 |
21 dBm |
COMPONENT |
4.5 |
DIE OR CHIP |
50 ohm |
RF/Microwave Amplifiers |
20 dB |
20000 MHz |
45000 MHz |
||||||||||||||
Broadcom |
WIDE BAND MEDIUM POWER |
GAAS |
26 dBm |
300 mA |
COMPONENT |
10 |
DIE OR CHIP |
50 ohm |
RF/Microwave Amplifiers |
||||||||||||||||||
|
Broadcom |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
GAAS |
1 |
10 dBm |
10 mA |
COMPONENT |
1/2.85 |
SOLCC6,.08,20 |
RF/Microwave Amplifiers |
12.5 dB |
Gold (Au) - with Nickel (Ni) barrier |
CMOS COMPATIBLE |
e4 |
900 MHz |
2400 MHz |
||||||||
Broadcom |
WIDE BAND MEDIUM POWER |
26 dBm |
COMPONENT |
50 ohm |
|||||||||||||||||||||||
|
Broadcom |
WIDE BAND MEDIUM POWER |
GAAS |
1 |
21 dBm |
COMPONENT |
4.5 |
DIE OR CHIP |
50 ohm |
RF/Microwave Amplifiers |
20 dB |
20000 MHz |
45000 MHz |
||||||||||||||
|
Broadcom |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
GAAS |
1 |
10 dBm |
10 mA |
COMPONENT |
1/2.85 |
SOLCC6,.08,20 |
RF/Microwave Amplifiers |
12.5 dB |
Gold (Au) - with Nickel (Ni) barrier |
CMOS COMPATIBLE |
e4 |
900 MHz |
2400 MHz |
||||||||
Broadcom |
WIDE BAND MEDIUM POWER |
||||||||||||||||||||||||||
Broadcom |
WIDE BAND MEDIUM POWER |
26 dBm |
COMPONENT |
50 ohm |
|||||||||||||||||||||||
|
Broadcom |
WIDE BAND MEDIUM POWER |
1 |
15.5 dBm |
MODULE |
5 |
DIE OR CHIP |
50 ohm |
RF/Microwave Amplifiers |
16.5 dB |
25000 MHz |
33000 MHz |
|||||||||||||||
|
Broadcom |
WIDE BAND MEDIUM POWER |
GAAS |
1 |
23 dBm |
COMPONENT |
7 |
DIE OR CHIP |
50 ohm |
RF/Microwave Amplifiers |
8.5 dB |
2000 MHz |
35000 MHz |
||||||||||||||
|
Broadcom |
WIDE BAND MEDIUM POWER |
COMPONENT |
50 ohm |
18 dB |
20000 MHz |
47000 MHz |
||||||||||||||||||||
|
Broadcom |
WIDE BAND MEDIUM POWER |
GAAS |
1 |
17 dBm |
COMPONENT |
4/7 |
DIE OR CHIP |
50 ohm |
RF/Microwave Amplifiers |
14 dB |
HIGH RELIABILITY |
.03 MHz |
40000 MHz |
|||||||||||||
Broadcom |
WIDE BAND MEDIUM POWER |
25 dBm |
2.5 |
COMPONENT |
50 ohm |
100 MHz |
2000 MHz |
RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.
The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.
RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.