WIDE BAND MEDIUM POWER RF & Microwave Amplifiers 1,817

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Gain	Minimum Operating Temperature	Terminal Finish	Additional Features	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
MAX2601	Analog Devices	WIDE BAND MEDIUM POWER						30 dBm											TIN LEAD		e0	0 MHz	1000 MHz
MAX2056ETX+TD	Analog Devices	WIDE BAND MEDIUM POWER						20 dBm			COMPONENT			50 ohm		85 Cel	15.5 dB	-40 Cel	Matte Tin (Sn) - annealed		e3	800 MHz	1000 MHz
MAX2233	Analog Devices	WIDE BAND MEDIUM POWER						23.98 dBm											TIN LEAD		e0	800 MHz	1000 MHz
MAX2644EXT+	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1	5 dBm		11 mA	COMPONENT	3	TSSOP6,.08	50 ohm		85 Cel	15 dB	-40 Cel	NICKEL PALLADIUM GOLD		e4	2400 MHz	2500 MHz
MAX2130EUA+T	Analog Devices	WIDE BAND MEDIUM POWER						15 dBm	2		COMPONENT			75 ohm		85 Cel	7.1 dB	-40 Cel	Matte Tin (Sn) - annealed		e3	44 MHz	878 MHz
MAX2235	Analog Devices	WIDE BAND MEDIUM POWER						30 dBm											TIN LEAD		e0	800 MHz	1000 MHz
MAX2232	Analog Devices	WIDE BAND MEDIUM POWER						23.98 dBm											TIN LEAD		e0	800 MHz	1000 MHz
MAX2056ETX+D	Analog Devices	WIDE BAND MEDIUM POWER						20 dBm			COMPONENT			50 ohm		85 Cel	15.5 dB	-40 Cel	Matte Tin (Sn) - annealed		e3	800 MHz	1000 MHz
MAX2130EUA+	Analog Devices	WIDE BAND MEDIUM POWER						15 dBm	2		COMPONENT			75 ohm		85 Cel	7.1 dB	-40 Cel	Matte Tin (Sn) - annealed		e3	44 MHz	878 MHz
HMC8413-CSL	Analog Devices	WIDE BAND MEDIUM POWER
SMA3004	Onsemi	WIDE BAND MEDIUM POWER	SURFACE MOUNT	6	PLASTIC/EPOXY		1	0 dBm		8 mA	COMPONENT	3	TSSOP6,.08	50 ohm		85 Cel	20 dB	-40 Cel					2500 MHz
MW4IC001NR4	NXP Semiconductors	WIDE BAND MEDIUM POWER									COMPONENT			50 ohm			12 dB		Matte Tin (Sn)		e3	800 MHz	2170 MHz
BGY883	NXP Semiconductors	WIDE BAND MEDIUM POWER			PLASTIC/EPOXY	HYBRID				235 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	15 dB	-20 Cel	Gold (Au)	LOW NOISE, HIGH RELIABILITY	e4	40 MHz	860 MHz
BGA7130	NXP Semiconductors	WIDE BAND MEDIUM POWER
BGY681	NXP Semiconductors	WIDE BAND MEDIUM POWER									MODULE			75 ohm		100 Cel	12.7 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	600 MHz
934013320112	NXP Semiconductors	WIDE BAND MEDIUM POWER									MODULE			75 ohm		100 Cel	17.3 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	860 MHz
BGA7127	NXP Semiconductors	WIDE BAND MEDIUM POWER						25 dBm			COMPONENT			50 ohm			10.5 dB					400 MHz	2700 MHz
BGY787,112	NXP Semiconductors	WIDE BAND MEDIUM POWER			PLASTIC/EPOXY	HYBRID				240 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	21.5 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	750 MHz
MMG5004NR2	NXP Semiconductors	WIDE BAND MEDIUM POWER									COMPONENT					85 Cel	24 dB	-40 Cel	Matte Tin (Sn)		e3	4900 MHz	5900 MHz
BGX881	NXP Semiconductors	WIDE BAND MEDIUM POWER			PLASTIC/EPOXY	HYBRID		16.25 dBm		240 mA	MODULE	24	MOT CASE 714B	75 ohm	RF/Microwave Amplifiers	100 Cel	12 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	860 MHz
BGY687B	NXP Semiconductors	WIDE BAND MEDIUM POWER			PLASTIC/EPOXY	HYBRID	1			340 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	27.8 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	600 MHz
BGX885N	NXP Semiconductors	WIDE BAND MEDIUM POWER			PLASTIC/EPOXY	HYBRID				240 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	17.3 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	860 MHz
BGY785AD	NXP Semiconductors	WIDE BAND MEDIUM POWER			METAL	HYBRID	1			265 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	18.5 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	750 MHz
CGY2100HL	NXP Semiconductors	WIDE BAND MEDIUM POWER									COMPONENT			50 ohm		85 Cel		-40 Cel		LOW NOISE			2800 MHz
BGY81	NXP Semiconductors	WIDE BAND MEDIUM POWER									MODULE			75 ohm		100 Cel	12.5 dB	-20 Cel		LOW NOISE		40 MHz	450 MHz
BGA3021	NXP Semiconductors	WIDE BAND MEDIUM POWER
CA5800CS	NXP Semiconductors	WIDE BAND MEDIUM POWER			PLASTIC/EPOXY	HYBRID		18 dBm	2.6	440 mA	MODULE	28	MOT CASE 714T-01	50 ohm	RF/Microwave Amplifiers	100 Cel		-20 Cel				10 MHz	1000 MHz
MW4IC001MR4	NXP Semiconductors	WIDE BAND MEDIUM POWER									COMPONENT			50 ohm			12 dB		Tin/Lead (Sn/Pb)		e0	800 MHz	2170 MHz
934015630112	NXP Semiconductors	WIDE BAND MEDIUM POWER									MODULE			75 ohm		100 Cel	21.5 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	750 MHz
BGY80	NXP Semiconductors	WIDE BAND MEDIUM POWER									MODULE			75 ohm		100 Cel	12.5 dB	-20 Cel		LOW NOISE		40 MHz	450 MHz
SA5200D	NXP Semiconductors	WIDE BAND MEDIUM POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	BIPOLAR		20 dBm		8.4 mA	COMPONENT	5	SOP8,.25	50 ohm	RF/Microwave Amplifiers	85 Cel		-40 Cel				0 MHz	1200 MHz
CA4812CS	NXP Semiconductors	WIDE BAND MEDIUM POWER			PLASTIC/EPOXY	HYBRID		14 dBm	2.6	400 mA	MODULE	12	MOT CASE 714T-01	50 ohm	RF/Microwave Amplifiers	100 Cel		-20 Cel				10 MHz	1000 MHz
BGA6589	NXP Semiconductors	WIDE BAND MEDIUM POWER	SURFACE MOUNT	3	PLASTIC/EPOXY		1	15 dBm		89 mA	COMPONENT	9	TO-243	50 ohm	RF/Microwave Amplifiers		15 dB		Tin (Sn)		e3	850 MHz	2500 MHz
CA4800C	NXP Semiconductors	WIDE BAND MEDIUM POWER			PLASTIC/EPOXY	HYBRID		14 dBm	2.6	240 mA	MODULE	24	SOT-115J	50 ohm	RF/Microwave Amplifiers	100 Cel		-20 Cel				10 MHz	1000 MHz
BGY883,112	NXP Semiconductors	WIDE BAND MEDIUM POWER			PLASTIC/EPOXY	HYBRID				235 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	15 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	860 MHz
934032040112	NXP Semiconductors	WIDE BAND MEDIUM POWER									MODULE			75 ohm		100 Cel	15 dB	-20 Cel	Gold (Au)	LOW NOISE, HIGH RELIABILITY	e4	40 MHz	860 MHz
BGA3015	NXP Semiconductors	WIDE BAND MEDIUM POWER																	Tin (Sn)		e3
BGA7124	NXP Semiconductors	WIDE BAND MEDIUM POWER						20 dBm			COMPONENT			50 ohm		85 Cel	14.5 dB	-40 Cel				400 MHz	2700 MHz
BGE885,112	NXP Semiconductors	WIDE BAND MEDIUM POWER			PLASTIC/EPOXY	HYBRID				240 mA	MODULE	24	SOT-115D	75 ohm	RF/Microwave Amplifiers	100 Cel	16.5 dB	-20 Cel		LOW NOISE		40 MHz	860 MHz
CA4800CS	NXP Semiconductors	WIDE BAND MEDIUM POWER			PLASTIC/EPOXY	HYBRID		14 dBm	2.6	240 mA	MODULE	24	MOT CASE 714T-01	50 ohm	RF/Microwave Amplifiers	100 Cel		-20 Cel				10 MHz	1000 MHz
BGY683	NXP Semiconductors	WIDE BAND MEDIUM POWER									MODULE			75 ohm		100 Cel	14.5 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	600 MHz
NE5200D	NXP Semiconductors	WIDE BAND MEDIUM POWER						20 dBm			COMPONENT			50 ohm		70 Cel		0 Cel				0 MHz	1200 MHz
CGY2100UH	NXP Semiconductors	WIDE BAND MEDIUM POWER									COMPONENT			50 ohm		85 Cel		-40 Cel		LOW NOISE			2800 MHz
SA5200D-T	NXP Semiconductors	WIDE BAND MEDIUM POWER						20 dBm			COMPONENT			50 ohm		85 Cel		-40 Cel				0 MHz	1200 MHz
BGE885	NXP Semiconductors	WIDE BAND MEDIUM POWER			PLASTIC/EPOXY	HYBRID				240 mA	MODULE	24	SOT-115D	75 ohm	RF/Microwave Amplifiers	100 Cel	16.5 dB	-20 Cel		LOW NOISE	e4	40 MHz	860 MHz
BGY787	NXP Semiconductors	WIDE BAND MEDIUM POWER			PLASTIC/EPOXY	HYBRID				240 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	21.5 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	750 MHz
NE5200D-T	NXP Semiconductors	WIDE BAND MEDIUM POWER						20 dBm			COMPONENT			50 ohm		70 Cel		0 Cel				0 MHz	1200 MHz
BGA3018	NXP Semiconductors	WIDE BAND MEDIUM POWER																	TIN		e3

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.