WIDE BAND MEDIUM POWER RF & Microwave Amplifiers 1,817

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Gain	Minimum Operating Temperature	Terminal Finish	Additional Features	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
AP2501S-13	Diodes Incorporated	WIDE BAND MEDIUM POWER																	MATTE TIN		e3
AP2511M8-13	Diodes Incorporated	WIDE BAND MEDIUM POWER																	MATTE TIN		e3
AP2501FGE-7	Diodes Incorporated	WIDE BAND MEDIUM POWER																	NICKEL PALLADIUM GOLD		e4
MAX2130EUA	Maxim Integrated	WIDE BAND MEDIUM POWER	SURFACE MOUNT	8	PLASTIC/EPOXY		1	15 dBm	2	104 mA	COMPONENT	5	TSSOP8,.19	75 ohm	RF/Microwave Amplifiers	85 Cel	7.1 dB	-40 Cel	TIN LEAD		e0	44 MHz	878 MHz
MAX2130EUA-T	Maxim Integrated	WIDE BAND MEDIUM POWER	SURFACE MOUNT	8	PLASTIC/EPOXY		1	15 dBm	2	104 mA	COMPONENT	5	TSSOP8,.19	75 ohm	RF/Microwave Amplifiers	85 Cel	7.1 dB	-40 Cel	Tin/Lead (Sn85Pb15)		e0	44 MHz	878 MHz
MAX2649EBT-T	Maxim Integrated	WIDE BAND MEDIUM POWER	SURFACE MOUNT	6	PLASTIC/EPOXY		1	5 dBm		20 mA	COMPONENT	3/3.3	BGA6,2X3,20	50 ohm	RF/Microwave Amplifiers	85 Cel	15 dB	-40 Cel	Tin/Lead (Sn63Pb37)		e0	4900 MHz	5900 MHz
MAX2430ISE	Maxim Integrated	WIDE BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	BIPOLAR		-3 dBm	8	70 mA		3.3/5	SOP16,.25	50 ohm	RF/Microwave Amplifiers	85 Cel	32 dB	-20 Cel	Tin/Lead (Sn85Pb15)		e0	800 MHz	1000 MHz
MAX2649EBT	Maxim Integrated	WIDE BAND MEDIUM POWER	SURFACE MOUNT	6	PLASTIC/EPOXY		1	5 dBm		20 mA	COMPONENT	3/3.3	BGA6,2X3,20	50 ohm	RF/Microwave Amplifiers	85 Cel	15 dB	-40 Cel	Tin/Lead (Sn63Pb37)		e0	4900 MHz	5900 MHz
MAX2644EXT-T	Maxim Integrated	WIDE BAND MEDIUM POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1	5 dBm		11 mA	COMPONENT	3	TSSOP6,.08	50 ohm		85 Cel	15 dB	-40 Cel	TIN LEAD		e0	2400 MHz	2500 MHz
MAX2430	Maxim Integrated	WIDE BAND MEDIUM POWER																	Tin/Lead (Sn/Pb)		e0	800 MHz	1000 MHz
MAX2430ISE-T	Maxim Integrated	WIDE BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	BIPOLAR	1	-3 dBm	8	70 mA		3.3/5	SOP16,.25	50 ohm	RF/Microwave Amplifiers	85 Cel	32 dB	-20 Cel	Tin/Lead (Sn85Pb15)		e0	800 MHz	1000 MHz
MAX2056ETX	Maxim Integrated	WIDE BAND MEDIUM POWER						20 dBm			COMPONENT			50 ohm		85 Cel	15.5 dB	-40 Cel	TIN LEAD		e0	800 MHz	1000 MHz
MAX2056ETX-T	Maxim Integrated	WIDE BAND MEDIUM POWER						20 dBm			COMPONENT			50 ohm		85 Cel	15.5 dB	-40 Cel	Tin/Lead (Sn/Pb)		e0	800 MHz	1000 MHz
MAX2644EXT	Maxim Integrated	WIDE BAND MEDIUM POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1	5 dBm		11 mA	COMPONENT	3	TSSOP6,.08	50 ohm		85 Cel	15 dB	-40 Cel	NICKEL PALLADIUM GOLD		e4	2400 MHz	2500 MHz
MAX2235EUP	Maxim Integrated	WIDE BAND MEDIUM POWER	SURFACE MOUNT	20	PLASTIC/EPOXY	BIPOLAR	1	13 dBm	1.5		COMPONENT	3/5	TSSOP20,.25	50 ohm	RF/Microwave Amplifiers	85 Cel	24 dB	-40 Cel	TIN LEAD		e0	800 MHz	1000 MHz
MAX2430IEE	Maxim Integrated	WIDE BAND MEDIUM POWER	SURFACE MOUNT	28	PLASTIC/EPOXY	BIPOLAR		3 dBm	8	70 mA		3.3/5	SSOP28,.25	50 ohm	RF/Microwave Amplifiers	85 Cel	31 dB	-20 Cel	Tin/Lead (Sn/Pb)		e0	800 MHz	1000 MHz
TMD1415-2B	Toshiba	WIDE BAND MEDIUM POWER			CERAMIC	GAAS	1					7,-5	FLNG,.53"H.SPACE		RF/Microwave Amplifiers
TMD0507-2A	Toshiba	WIDE BAND MEDIUM POWER			CERAMIC	GAAS	1	20 dBm	3		MODULE	10,-5	FLNG,.59"H.SPACE	50 ohm	RF/Microwave Amplifiers	80 Cel		-30 Cel				5100 MHz	7200 MHz
TMD0507-2	Toshiba	WIDE BAND MEDIUM POWER			CERAMIC	GAAS				2000 mA		10	FLNG,.59"H.SPACE		RF/Microwave Amplifiers
TMD7185-2	Toshiba	WIDE BAND MEDIUM POWER			CERAMIC		1	10 dBm	3	1700 mA	COMPONENT	10,-5	FLNG,.59"H.SPACE	50 ohm	RF/Microwave Amplifiers	80 Cel		-30 Cel				7100 MHz	8500 MHz
TMD0305-2	Toshiba	WIDE BAND MEDIUM POWER			CERAMIC	GAAS		25 dBm	3	1900 mA	MODULE	10	FLNG,.59"H.SPACE	50 ohm	RF/Microwave Amplifiers		20 dB		Tin/Lead (Sn/Pb)		e0	3400 MHz	5100 MHz
TMD1013-1	Toshiba	WIDE BAND MEDIUM POWER			CERAMIC	GAAS	1	15 dBm	3		MODULE	10,-5	FLNG,.53"H.SPACE	50 ohm	RF/Microwave Amplifiers	80 Cel		-30 Cel				10000 MHz	13300 MHz
JS9770-AS	Toshiba	WIDE BAND MEDIUM POWER						16 dBm	1.9		COMPONENT			50 ohm		80 Cel		-30 Cel				27500 MHz	29500 MHz
JS9768-AS	Toshiba	WIDE BAND MEDIUM POWER						16 dBm	1.9		COMPONENT			50 ohm		80 Cel		-30 Cel				24500 MHz	26500 MHz
S9750	Toshiba	WIDE BAND MEDIUM POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS		13 dBm		400 mA	COMPONENT	6	FL8,.32FL	50 ohm	RF/Microwave Amplifiers	80 Cel	19 dB	-30 Cel	Tin/Lead (Sn/Pb)		e0
TMD5872-2	Toshiba	WIDE BAND MEDIUM POWER			PLASTIC/EPOXY	GAAS	1	10 dBm	3	1600 mA	MODULE	10,-5	FLNG,.53"H.SPACE		RF/Microwave Amplifiers	80 Cel		-30 Cel				5800 MHz	7200 MHz
TMD0708-2	Toshiba	WIDE BAND MEDIUM POWER			CERAMIC	GAAS		25 dBm	3	2000 mA	MODULE	10	FLNG,.59"H.SPACE	50 ohm	RF/Microwave Amplifiers	80 Cel		-30 Cel				7100 MHz	8500 MHz
JS9766-AS	Toshiba	WIDE BAND MEDIUM POWER						16 dBm	1.9		COMPONENT			50 ohm		80 Cel		-30 Cel				21200 MHz	23600 MHz
F1478NLGA8	Renesas Electronics	WIDE BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY		1	21 dBm	2		COMPONENT	5	LCC16,.12SQ,20	50 ohm		115 Cel	27.9 dB	-40 Cel	Tin (Sn)		e3	1800 MHz	5000 MHz
F0109NBTI8	Renesas Electronics	WIDE BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY		2	20 dBm	2		COMPONENT	5	LCC16,.16SQ,25	50 ohm		105 Cel	16 dB	-40 Cel	TIN	LOW NOISE	e3	650 MHz	1000 MHz
F1490NLGA8	Renesas Electronics	WIDE BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY		1	22 dBm	2		COMPONENT	5	LCC16,.12SQ,20	50 ohm		115 Cel	33 dB	-40 Cel	TIN		e3	1800 MHz	6400 MHz
F1478NLGA	Renesas Electronics	WIDE BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY		1	21 dBm	2		COMPONENT	5	LCC16,.12SQ,20	50 ohm		115 Cel	27.9 dB	-40 Cel	Tin (Sn)		e3	1800 MHz	5000 MHz
MC-7896-AZ	Renesas Electronics	WIDE BAND MEDIUM POWER			PLASTIC/EPOXY	GAAS	1			385 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	25.6 dB	-30 Cel	Tin/Bismuth (Sn/Bi)	LOW NOISE	e6	40 MHz	1000 MHz
F1431BNBGK8	Renesas Electronics	WIDE BAND MEDIUM POWER	SURFACE MOUNT	24			1	9 dBm	1.38	177 mA	COMPONENT	5	LCC24,.16SQ,20	50 ohm		105 Cel	11.7 dB	-40 Cel	TIN		e3	350 MHz	3000 MHz
MC-5963	Renesas Electronics	WIDE BAND MEDIUM POWER	SURFACE MOUNT	5	PLASTIC/EPOXY	GAAS				460 mA		4.6,-3.5	SMSIP5/6H,.5		RF/Microwave Amplifiers				Tin/Lead (Sn/Pb)		e0
F1471NTGI	Renesas Electronics	WIDE BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY		1	18 dBm	2		COMPONENT	5	LCC16,.12SQ,20	50 ohm		115 Cel	13 dB	-40 Cel	TIN		e3	400 MHz	4200 MHz
UPG2314T5N-E2-A	Renesas Electronics	WIDE BAND MEDIUM POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS	1	10 dBm		70 mA	COMPONENT	3	SOLCC6,.06,20		RF/Microwave Amplifiers	85 Cel	17 dB	-40 Cel				2400 MHz	2500 MHz
MC-5964-E1	Renesas Electronics	WIDE BAND MEDIUM POWER						8 dBm	3		COMPONENT			50 ohm		90 Cel		-30 Cel				872 MHz	905 MHz
F1490NLGA	Renesas Electronics	WIDE BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY		1	22 dBm	2		COMPONENT	5	LCC16,.12SQ,20	50 ohm		115 Cel	33 dB	-40 Cel	TIN		e3	1800 MHz	6400 MHz
EXP8603-DNT	Renesas Electronics	WIDE BAND MEDIUM POWER																	TIN		e3
F1431BNBGK	Renesas Electronics	WIDE BAND MEDIUM POWER	SURFACE MOUNT	24			1	9 dBm	1.38	177 mA	COMPONENT	5	LCC24,.16SQ,20	50 ohm		105 Cel	11.7 dB	-40 Cel	TIN		e3	350 MHz	3000 MHz
IT2008	Renesas Electronics	WIDE BAND MEDIUM POWER	SURFACE MOUNT	6		GAAS	1	25 dBm	1.67	900 mA	COMPONENT	9	DIE OR CHIP	50 ohm		150 Cel	8 dB			HIGH RELIABILITY		10 MHz	26500 MHz
EXP7602-DNT	Renesas Electronics	WIDE BAND MEDIUM POWER																	TIN		e3
MC-7896	Renesas Electronics	WIDE BAND MEDIUM POWER									COMPONENT			75 ohm		100 Cel	25.6 dB	-30 Cel	Tin/Lead (Sn/Pb)		e0	40 MHz	1000 MHz
F0109NBTI	Renesas Electronics	WIDE BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY		2	20 dBm	2		COMPONENT	5	LCC16,.16SQ,25	50 ohm		105 Cel	16 dB	-40 Cel	TIN	LOW NOISE	e3	650 MHz	1000 MHz
MC-5963-E1	Renesas Electronics	WIDE BAND MEDIUM POWER						8 dBm	3		COMPONENT			50 ohm		90 Cel		-30 Cel				824 MHz	849 MHz
MC-5964	Renesas Electronics	WIDE BAND MEDIUM POWER	SURFACE MOUNT	5	PLASTIC/EPOXY	GAAS				460 mA		4.6,-3.3	SMSIP5/6H,.5		RF/Microwave Amplifiers				Tin/Lead (Sn/Pb)		e0
HA31006ANPTL-E	Renesas Electronics	WIDE BAND MEDIUM POWER						5 dBm			COMPONENT					85 Cel	16 dB	-10 Cel

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.