WIDE BAND MEDIUM POWER RF & Microwave Amplifiers 1,817

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	Screening Level	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Gain	Minimum Operating Temperature	Terminal Finish	Additional Features	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
BGY587B,112	NXP Semiconductors	WIDE BAND MEDIUM POWER			PLASTIC/EPOXY	HYBRID		1	6.25 dBm		340 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	27.5 dB	-20 Cel		LOW NOISE		40 MHz	550 MHz
933997410112	NXP Semiconductors	WIDE BAND MEDIUM POWER							6.25 dBm			MODULE			75 ohm		100 Cel	27.5 dB	-20 Cel		LOW NOISE		40 MHz	550 MHz
CA5800C	NXP Semiconductors	WIDE BAND MEDIUM POWER			PLASTIC/EPOXY	HYBRID			18 dBm	2.6	440 mA	MODULE	28	SOT-115J	50 ohm	RF/Microwave Amplifiers	100 Cel		-20 Cel				10 MHz	1000 MHz
BGY785AD/8M	NXP Semiconductors	WIDE BAND MEDIUM POWER			METAL	HYBRID		1			265 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	18.5 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	870 MHz
BGA3022	NXP Semiconductors	WIDE BAND MEDIUM POWER
CA2832C	NXP Semiconductors	WIDE BAND MEDIUM POWER			PLASTIC/EPOXY	HYBRID			5 dBm	2		MODULE	28	SOT-115J	50 ohm	RF/Microwave Amplifiers	90 Cel	34 dB	-20 Cel		HIGH RELIABILITY		1 MHz	200 MHz
BGD885	NXP Semiconductors	WIDE BAND MEDIUM POWER			PLASTIC/EPOXY	HYBRID					450 mA	MODULE	24	SOT-115D	75 ohm	RF/Microwave Amplifiers	100 Cel	16.5 dB	-20 Cel	Gold (Au)	LOW NOISE, HIGH RELIABILITY	e4	40 MHz	860 MHz
934005650112	NXP Semiconductors	WIDE BAND MEDIUM POWER										MODULE			75 ohm		100 Cel	16.5 dB	-20 Cel		LOW NOISE		40 MHz	860 MHz
CA4812C	NXP Semiconductors	WIDE BAND MEDIUM POWER			PLASTIC/EPOXY	HYBRID			14 dBm	2.6	400 mA	MODULE	12	SOT-115J	50 ohm	RF/Microwave Amplifiers	100 Cel		-20 Cel				10 MHz	1000 MHz
CA4815C	NXP Semiconductors	WIDE BAND MEDIUM POWER			PLASTIC/EPOXY	HYBRID			14 dBm	2.6		MODULE	15	SOT-115J	50 ohm	RF/Microwave Amplifiers	100 Cel		-20 Cel				10 MHz	1000 MHz
934005490112	NXP Semiconductors	WIDE BAND MEDIUM POWER										MODULE			75 ohm		100 Cel	16.5 dB	-20 Cel	Gold (Au)	LOW NOISE, HIGH RELIABILITY	e4	40 MHz	860 MHz
OM2070	NXP Semiconductors	WIDE BAND MEDIUM POWER								1.9		MODULE						28 dB			LOW NOISE		40 MHz	860 MHz
BGY685AD	NXP Semiconductors	WIDE BAND MEDIUM POWER										MODULE			75 ohm		100 Cel	18.75 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	600 MHz
BGA7027	NXP Semiconductors	WIDE BAND MEDIUM POWER							28 dBm			COMPONENT			50 ohm		85 Cel	9 dB	-40 Cel	TIN		e3	400 MHz	2700 MHz
934057503135	NXP Semiconductors	WIDE BAND MEDIUM POWER							15 dBm			COMPONENT			50 ohm			15 dB		TIN		e3	850 MHz	2500 MHz
CA2810C	NXP Semiconductors	WIDE BAND MEDIUM POWER			PLASTIC/EPOXY	HYBRID			5 dBm	2	330 mA	MODULE	24	SOT-115J	50 ohm	RF/Microwave Amplifiers	100 Cel	33 dB	-20 Cel		HIGH RELIABILITY		10 MHz	450 MHz
BGA3012	NXP Semiconductors	WIDE BAND MEDIUM POWER							20 dBm			COMPONENT			75 ohm		85 Cel	11 dB	-40 Cel	Tin (Sn)	LOW NOISE	e3	5 MHz	1006 MHz
BGA6589,135	NXP Semiconductors	WIDE BAND MEDIUM POWER	SURFACE MOUNT	3	PLASTIC/EPOXY			1	15 dBm		89 mA	COMPONENT	9	TO-243	50 ohm	RF/Microwave Amplifiers		15 dB		Tin (Sn)		e3	850 MHz	2500 MHz
BGA3023	NXP Semiconductors	WIDE BAND MEDIUM POWER
BGY580	NXP Semiconductors	WIDE BAND MEDIUM POWER			PLASTIC/EPOXY	HYBRID			16.25 dBm		200 mA	MODULE	24	SOT-115C	75 ohm	RF/Microwave Amplifiers	100 Cel	12.5 dB	-20 Cel		LOWNOISE		40 MHz	550 MHz
BGA7024	NXP Semiconductors	WIDE BAND MEDIUM POWER							25 dBm			COMPONENT			50 ohm		85 Cel	13.5 dB	-40 Cel	TIN		e3	400 MHz	2700 MHz
A3M40PD012T7	NXP Semiconductors	WIDE BAND MEDIUM POWER	SURFACE MOUNT	12	PLASTIC/EPOXY			1	25 dBm	1.38	300 mA	COMPONENT	3.3	LCC12,.08SQ,20	50 ohm		125 Cel	30 dB					2300 MHz	4200 MHz
BGY587B	NXP Semiconductors	WIDE BAND MEDIUM POWER			PLASTIC/EPOXY	HYBRID		1	6.25 dBm		340 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	27.5 dB	-20 Cel		LOW NOISE		40 MHz	550 MHz
BGA6130	NXP Semiconductors	WIDE BAND MEDIUM POWER							15 dBm			COMPONENT			50 ohm		85 Cel	11 dB	-40 Cel				400 MHz	2700 MHz
CA4815CS	NXP Semiconductors	WIDE BAND MEDIUM POWER			PLASTIC/EPOXY	HYBRID			14 dBm	2.6	400 mA	MODULE	15	MOT CASE 714T-01	50 ohm	RF/Microwave Amplifiers	100 Cel		-20 Cel				10 MHz	1000 MHz
BGY87B	NXP Semiconductors	WIDE BAND MEDIUM POWER			PLASTIC/EPOXY	HYBRID		1	6.25 dBm		340 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	26.2 dB	-20 Cel		LOW NOISE		40 MHz	450 MHz
BGY583	NXP Semiconductors	WIDE BAND MEDIUM POWER			PLASTIC/EPOXY	HYBRID		1	16.25 dBm		240 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	14.5 dB	-20 Cel		LOWNOISE		40 MHz	550 MHz
BGD885,112	NXP Semiconductors	WIDE BAND MEDIUM POWER			PLASTIC/EPOXY	HYBRID					450 mA	MODULE	24	SOT-115D	75 ohm	RF/Microwave Amplifiers	100 Cel	16.5 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	860 MHz
BTS6302UJ	NXP Semiconductors	WIDE BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY		IEC-60134	1	10 dBm	1.67	120 mA	COMPONENT	5	LCC16,.12SQ,20	50 ohm		115 Cel	33.8 dB	-40 Cel				2300 MHz	5000 MHz
BGA3021Y	NXP Semiconductors	WIDE BAND MEDIUM POWER
BGA3022Y	NXP Semiconductors	WIDE BAND MEDIUM POWER
BGA3023Y	NXP Semiconductors	WIDE BAND MEDIUM POWER
BTS6403UJ	NXP Semiconductors	WIDE BAND MEDIUM POWER
BTS6403U	NXP Semiconductors	WIDE BAND MEDIUM POWER
BTS6305UJ	NXP Semiconductors	WIDE BAND MEDIUM POWER
BTS6305U	NXP Semiconductors	WIDE BAND MEDIUM POWER
MHW8272A	NXP Semiconductors	WIDE BAND MEDIUM POWER			PLASTIC/EPOXY	HYBRID					350 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	27 dB	-20 Cel				40 MHz	870 MHz
935295452115	NXP Semiconductors	WIDE BAND MEDIUM POWER
935289298135	NXP Semiconductors	WIDE BAND MEDIUM POWER							28 dBm			COMPONENT			50 ohm		85 Cel	9 dB	-40 Cel	TIN		e3	400 MHz	2700 MHz
MHL8118	NXP Semiconductors	WIDE BAND MEDIUM POWER			METAL	HYBRID			20 dBm	2.6	440 mA	COMPONENT	28	MOT CASE 448-01	50 ohm	RF/Microwave Amplifiers	100 Cel	16.5 dB	-20 Cel		LOW NOISE		50 MHz	1000 MHz
935289302118	NXP Semiconductors	WIDE BAND MEDIUM POWER							20 dBm			COMPONENT			50 ohm		85 Cel	14.5 dB	-40 Cel				400 MHz	2700 MHz
MMG20271HT1	NXP Semiconductors	WIDE BAND MEDIUM POWER	SURFACE MOUNT	12	PLASTIC/EPOXY			1			227 mA		5	LCC12,.12SQ,20		RF/Microwave Amplifiers				Matte Tin (Sn)		e3
MHW1345N	NXP Semiconductors	WIDE BAND MEDIUM POWER			PLASTIC/EPOXY	BIPOLAR		1	5 dBm	2	330 mA	MODULE	24	SOT-115J	50 ohm	RF/Microwave Amplifiers	100 Cel	33.5 dB	20 Cel				10 MHz	200 MHz
MHVIC2115R2	NXP Semiconductors	WIDE BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	MOS		1		3	204 mA	COMPONENT	26	SOP16,.35,32	50 ohm	RF/Microwave Amplifiers	150 Cel	31 dB					1600 MHz	2600 MHz
MMH3111NT1	NXP Semiconductors	WIDE BAND MEDIUM POWER	SURFACE MOUNT	3	PLASTIC/EPOXY			1	20 dBm		190 mA	COMPONENT	5	TO-243	50 ohm	RF/Microwave Amplifiers		10 dB		Matte Tin (Sn)		e3	250 MHz	4000 MHz
MHW1345	NXP Semiconductors	WIDE BAND MEDIUM POWER			PLASTIC/EPOXY	BIPOLAR		1	5 dBm	2	330 mA	MODULE	24	SOT-115J	50 ohm	RF/Microwave Amplifiers	100 Cel	33.5 dB	-20 Cel				10 MHz	200 MHz
935289297115	NXP Semiconductors	WIDE BAND MEDIUM POWER							25 dBm			COMPONENT			50 ohm		85 Cel	13.5 dB	-40 Cel	TIN		e3	400 MHz	2700 MHz
MHL9125	NXP Semiconductors	WIDE BAND MEDIUM POWER			METAL	HYBRID			20 dBm	1.5	760 mA	COMPONENT	15	MOT CASE 448-01	50 ohm	RF/Microwave Amplifiers	100 Cel	19 dB	-20 Cel				800 MHz	960 MHz

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.