WIDE BAND MEDIUM POWER RF & Microwave Amplifiers 1,817

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Gain	Minimum Operating Temperature	Terminal Finish	Additional Features	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
MHL8018	NXP Semiconductors	WIDE BAND MEDIUM POWER			METAL	HYBRID		14 dBm	2.6	240 mA	COMPONENT	28	MOT CASE 448-01	50 ohm	RF/Microwave Amplifiers	100 Cel	17.5 dB	-20 Cel		LOW NOISE		40 MHz	1000 MHz
MHW8272AN	NXP Semiconductors	WIDE BAND MEDIUM POWER									MODULE			75 ohm		100 Cel	27 dB	-20 Cel				40 MHz	870 MHz
935289303118	NXP Semiconductors	WIDE BAND MEDIUM POWER						25 dBm			COMPONENT			50 ohm			10.5 dB					400 MHz	2700 MHz
MHW9146N	NXP Semiconductors	WIDE BAND MEDIUM POWER									MODULE			75 ohm		100 Cel	13.8 dB	-20 Cel				40 MHz	870 MHz
MML09212HT1	NXP Semiconductors	WIDE BAND MEDIUM POWER	SURFACE MOUNT	12	PLASTIC/EPOXY		1			178 mA		5	SOLCC12,.12,20		RF/Microwave Amplifiers				MATTE TIN		e3
MHW9207A	NXP Semiconductors	WIDE BAND MEDIUM POWER			PLASTIC/EPOXY	GAAS	1			440 mA	COMPONENT	24	MOT CASE 1302-01	75 ohm	RF/Microwave Amplifiers	100 Cel	20.6 dB	-20 Cel				47 MHz	870 MHz
935295453115	NXP Semiconductors	WIDE BAND MEDIUM POWER
935289298115	NXP Semiconductors	WIDE BAND MEDIUM POWER						28 dBm			COMPONENT			50 ohm		85 Cel	9 dB	-40 Cel	TIN		e3	400 MHz	2700 MHz
935295451115	NXP Semiconductors	WIDE BAND MEDIUM POWER
MHL8115	NXP Semiconductors	WIDE BAND MEDIUM POWER			METAL	HYBRID		20 dBm	2.6	760 mA	COMPONENT	15	MOT CASE 448-01	50 ohm	RF/Microwave Amplifiers	100 Cel	16.5 dB	-20 Cel		LOW NOISE		50 MHz	1000 MHz
MHW7242A	NXP Semiconductors	WIDE BAND MEDIUM POWER			PLASTIC/EPOXY	HYBRID				350 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	24 dB	-20 Cel				40 MHz	750 MHz
MHW7272A	NXP Semiconductors	WIDE BAND MEDIUM POWER			PLASTIC/EPOXY	HYBRID				350 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	27 dB	-20 Cel				40 MHz	750 MHz
MML25231HT1	NXP Semiconductors	WIDE BAND MEDIUM POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	E-PHEMT	1	20 dBm		65 mA	COMPONENT	5	SOLCC8,.08,20	50 ohm			14.2 dB		TIN		e3	1000 MHz	4000 MHz
MML20242HT1	NXP Semiconductors	WIDE BAND MEDIUM POWER	SURFACE MOUNT	12	PLASTIC/EPOXY		1			207 mA		5	LCC12,.12SQ,20		RF/Microwave Amplifiers				Matte Tin (Sn)		e3
MHW9242A	NXP Semiconductors	WIDE BAND MEDIUM POWER			METAL	HYBRID				350 mA	MODULE	24	MOT CASE 714Y-03	75 ohm	RF/Microwave Amplifiers	100 Cel	24 dB	-20 Cel				40 MHz	1000 MHz
MHW8242A	NXP Semiconductors	WIDE BAND MEDIUM POWER			PLASTIC/EPOXY	HYBRID				350 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	24 dB	-20 Cel				40 MHz	860 MHz
MHW8242AN	NXP Semiconductors	WIDE BAND MEDIUM POWER									MODULE			75 ohm		100 Cel	24 dB	-20 Cel				40 MHz	860 MHz
MHW9146	NXP Semiconductors	WIDE BAND MEDIUM POWER			PLASTIC/EPOXY	GAAS	1			260 mA	MODULE	24	MOT CASE 1302-01	75 ohm	RF/Microwave Amplifiers	100 Cel	1 dB	-20 Cel				40 MHz	870 MHz
MML09211HT1	NXP Semiconductors	WIDE BAND MEDIUM POWER	SURFACE MOUNT	8	PLASTIC/EPOXY		1	20 dBm		90 mA	COMPONENT	5	SOLCC8,.08,20	50 ohm	RF/Microwave Amplifiers		19 dB		Matte Tin (Sn)		e3	400 MHz	1400 MHz
MHVIC2114R2	NXP Semiconductors	WIDE BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	MOS	1	5 dBm	3		COMPONENT	27	SOP16,.35,32	50 ohm	RF/Microwave Amplifiers	150 Cel	29 dB					1600 MHz	2600 MHz
MMZ27333BT1	NXP Semiconductors	WIDE BAND MEDIUM POWER	SURFACE MOUNT	24	PLASTIC/EPOXY	HYBRID	1	10 dBm	1.55		COMPONENT	5	LCC24,.16SQ,20	50 ohm			34.8 dB		TIN		e3	1500 MHz	2700 MHz
MMG20271H9T1	NXP Semiconductors	WIDE BAND MEDIUM POWER	SURFACE MOUNT	3	PLASTIC/EPOXY		1	25 dBm		271 mA	COMPONENT	5	TO-243	50 ohm	RF/Microwave Amplifiers		13.4 dB		MATTE TIN		e3	1500 MHz	2700 MHz
935289297135	NXP Semiconductors	WIDE BAND MEDIUM POWER						25 dBm			COMPONENT			50 ohm		85 Cel	13.5 dB	-40 Cel	TIN		e3	400 MHz	2700 MHz
MMG3004NT1	NXP Semiconductors	WIDE BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	BIPOLAR	1	18 dBm		275 mA	COMPONENT	5	LCC16(UNSPEC)	50 ohm	RF/Microwave Amplifiers		15 dB					400 MHz	2200 MHz
MMG3003NT1	NXP Semiconductors	WIDE BAND MEDIUM POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	BIPOLAR	1	15 dBm		205 mA	COMPONENT	6.2	TO-243	50 ohm	RF/Microwave Amplifiers		19.3 dB		Matte Tin (Sn)		e3	40 MHz	3600 MHz
935321661167	NXP Semiconductors	WIDE BAND MEDIUM POWER
935311653147	NXP Semiconductors	WIDE BAND MEDIUM POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	GAAS	1	23 dBm		104 mA	COMPONENT	5	TO-243	50 ohm			18.4 dB					450 MHz	3800 MHz
935317631167	NXP Semiconductors	WIDE BAND MEDIUM POWER
935320796147	NXP Semiconductors	WIDE BAND MEDIUM POWER	SURFACE MOUNT	24	PLASTIC/EPOXY	HYBRID	1	10 dBm	1.55		COMPONENT	5	LCC24,.16SQ,20	50 ohm			34.8 dB		Tin (Sn)		e3	1500 MHz	2700 MHz
935318587147	NXP Semiconductors	WIDE BAND MEDIUM POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	E-PHEMT	1	20 dBm		65 mA	COMPONENT	5	SOLCC8,.08,20	50 ohm			14.2 dB		Tin (Sn)		e3	1000 MHz	4000 MHz
935325969147	NXP Semiconductors	WIDE BAND MEDIUM POWER	SURFACE MOUNT	24	PLASTIC/EPOXY	HYBRID	1	30 dBm		415 mA	COMPONENT	5	LCC24,.16SQ,20	50 ohm			23.5 dB		Tin (Sn)		e3	1500 MHz	2700 MHz
MMG3005NT1	NXP Semiconductors	WIDE BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	BIPOLAR	1	18 dBm		520 mA	COMPONENT	5	LCC16(UNSPEC)	50 ohm	RF/Microwave Amplifiers		14 dB					800 MHz	2200 MHz
935317025147	NXP Semiconductors	WIDE BAND MEDIUM POWER
T458B_PA	Infineon Technologies	WIDE BAND MEDIUM POWER									COMPONENT						22 dB					17000 MHz	24000 MHz
27-31GHZHPA	Infineon Technologies	WIDE BAND MEDIUM POWER									COMPONENT			50 ohm								27000 MHz	31000 MHz
PTMA080302MV1R250AUMA1	Infineon Technologies	WIDE BAND MEDIUM POWER
T485B_MPA_2	Infineon Technologies	WIDE BAND MEDIUM POWER									COMPONENT			50 ohm			12 dB					35000 MHz	38000 MHz
CGY63	Infineon Technologies	WIDE BAND MEDIUM POWER	SURFACE MOUNT	5	PLASTIC/EPOXY	GAAS		15 dBm	2		COMPONENT	3/5	SCT-595	50 ohm	RF/Microwave Amplifiers		20 dB		Tin/Lead (Sn/Pb)		e0	800 MHz	2500 MHz
PTMA080302M-30W	Infineon Technologies	WIDE BAND MEDIUM POWER
CGY196	Infineon Technologies	WIDE BAND MEDIUM POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS		20 dBm	20		COMPONENT	3.3/5	TSOP8,.1,30/24	50 ohm	RF/Microwave Amplifiers		27 dB		Tin/Lead (Sn/Pb)		e0	800 MHz	3500 MHz
CGY120	Infineon Technologies	WIDE BAND MEDIUM POWER	SURFACE MOUNT	5	PLASTIC/EPOXY	GAAS					COMPONENT	3/5	TSOP5/6,.11,37	50 ohm	RF/Microwave Amplifiers				Tin/Lead (Sn/Pb)		e0	800 MHz	2500 MHz
CGY195	Infineon Technologies	WIDE BAND MEDIUM POWER	SURFACE MOUNT	5	PLASTIC/EPOXY	GAAS		20 dBm	2		COMPONENT	3.3/5	SCT-595	50 ohm	RF/Microwave Amplifiers		24 dB					800 MHz	3000 MHz
CGY197	Infineon Technologies	WIDE BAND MEDIUM POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS		20 dBm	20		COMPONENT	2/6	SOP8(UNSPEC)	50 ohm	RF/Microwave Amplifiers				Tin/Lead (Sn/Pb)		e0	800 MHz	35000 MHz
AP2511FGE-7	Diodes Incorporated	WIDE BAND MEDIUM POWER																	NICKEL PALLADIUM GOLD		e4
AP2511SN-7	Diodes Incorporated	WIDE BAND MEDIUM POWER																	NICKEL PALLADIUM GOLD		e4
AP2501MP-13	Diodes Incorporated	WIDE BAND MEDIUM POWER																	MATTE TIN		e3
AP2511S-13	Diodes Incorporated	WIDE BAND MEDIUM POWER																	MATTE TIN		e3
AP2501SN-7	Diodes Incorporated	WIDE BAND MEDIUM POWER																	NICKEL PALLADIUM GOLD		e4

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.