Part | RoHS | Manufacturer | RF or Microwave Device Type | Mounting Feature | No. of Terminals | Package Body Material | Technology | Screening Level | Total Dose (V) | Maximum Supply Voltage | No. of Functions | Maximum Input Power (CW) | Maximum Voltage Standing Wave Ratio | Maximum Supply Current | Construction | Power Supplies (V) | Package Equivalence Code | Characteristic Impedance | Sub-Category | Maximum Operating Temperature | Gain | Minimum Operating Temperature | Terminal Finish | Additional Features | JESD-609 Code | Minimum Operating Frequency | Maximum Operating Frequency |
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|
Analog Devices |
WIDE BAND MEDIUM POWER |
20 dBm |
COMPONENT |
50 ohm |
85 Cel |
19 dB |
-40 Cel |
Matte Tin (Sn) |
e3 |
7000 MHz |
9000 MHz |
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|
Analog Devices |
WIDE BAND MEDIUM POWER |
25 dBm |
COMPONENT |
50 ohm |
85 Cel |
11 dB |
-55 Cel |
0 MHz |
6000 MHz |
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Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
GAAS |
1 |
20 dBm |
COMPONENT |
7 |
LCC32,.2SQ,20 |
50 ohm |
85 Cel |
19 dB |
-40 Cel |
9000 MHz |
12000 MHz |
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|
Analog Devices |
WIDE BAND MEDIUM POWER |
GAAS |
1 |
10 dBm |
275 mA |
COMPONENT |
5 |
DIE OR CHIP |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
20 dB |
-55 Cel |
17000 MHz |
24000 MHz |
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Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
GAAS |
1 |
20 dBm |
325 mA |
COMPONENT |
5 |
LCC32,.2SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
5 dB |
-40 Cel |
Tin/Lead (Sn/Pb) |
e0 |
400 MHz |
3000 MHz |
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|
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
GAAS |
1 |
20 dBm |
325 mA |
COMPONENT |
5 |
LCC32,.2SQ,20 |
50 ohm |
85 Cel |
5 dB |
-40 Cel |
400 MHz |
3000 MHz |
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|
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
16 |
CERAMIC |
1 |
COMPONENT |
3.3 |
LCC16,.12SQ,20 |
50 ohm |
85 Cel |
30 dB |
-40 Cel |
GOLD OVER NICKEL |
e4 |
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Analog Devices |
WIDE BAND MEDIUM POWER |
32 dBm |
COMPONENT |
50 ohm |
85 Cel |
6 dB |
-40 Cel |
Tin/Lead (Sn/Pb) |
e0 |
400 MHz |
2200 MHz |
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|
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
GAAS |
1 |
27 dBm |
COMPONENT |
12 |
LCC32,.2SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
150 Cel |
9.5 dB |
-55 Cel |
Matte Tin (Sn) |
e3 |
0 MHz |
10000 MHz |
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|
Analog Devices |
WIDE BAND MEDIUM POWER |
27 dBm |
7 |
COMPONENT |
50 ohm |
85 Cel |
14 dB |
-55 Cel |
0 MHz |
22000 MHz |
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|
Analog Devices |
WIDE BAND MEDIUM POWER |
20 dBm |
COMPONENT |
50 ohm |
85 Cel |
19 dB |
-55 Cel |
Gold (Au) |
e4 |
40000 MHz |
43500 MHz |
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|
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
32 dBm |
COMPONENT |
5 |
SSOP16,.25 |
50 ohm |
85 Cel |
6 dB |
-40 Cel |
MATTE TIN |
e3 |
400 MHz |
2200 MHz |
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|
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
GAAS |
1 |
380 mA |
6 |
LCC24,.16SQ,20 |
RF/Microwave Amplifiers |
85 Cel |
-55 Cel |
||||||||||||||
|
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
15 dBm |
COMPONENT |
5 |
LCC16,.12SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
11.5 dB |
-40 Cel |
MATTE TIN |
e3 |
700 MHz |
1000 MHz |
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|
Analog Devices |
WIDE BAND MEDIUM POWER |
Gold (Au) |
e4 |
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|
Analog Devices |
WIDE BAND MEDIUM POWER |
8 dBm |
COMPONENT |
200 ohm |
85 Cel |
19 dB |
-40 Cel |
Matte Tin (Sn) |
e3 |
1000 MHz |
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|
Analog Devices |
WIDE BAND MEDIUM POWER |
GAAS |
1 |
20 dBm |
COMPONENT |
8 |
DIE OR CHIP |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
14.8 dB |
-55 Cel |
0 MHz |
15000 MHz |
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Analog Devices |
WIDE BAND MEDIUM POWER |
8 dBm |
COMPONENT |
200 ohm |
85 Cel |
14 dB |
-40 Cel |
Tin/Lead (Sn85Pb15) |
e0 |
1000 MHz |
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Analog Devices |
WIDE BAND MEDIUM POWER |
||||||||||||||||||||||||||
|
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
12 |
GAAS |
1 |
18 dBm |
COMPONENT |
6 |
DIE OR CHIP |
50 ohm |
85 Cel |
21 dB |
-55 Cel |
Gold (Au) |
e4 |
33500 MHz |
46500 MHz |
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|
Analog Devices |
WIDE BAND MEDIUM POWER |
23 dBm |
COMPONENT |
50 ohm |
85 Cel |
-40 Cel |
MATTE TIN |
SMA |
e3 |
700 MHz |
1000 MHz |
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Analog Devices |
WIDE BAND MEDIUM POWER |
8 dBm |
COMPONENT |
200 ohm |
85 Cel |
19 dB |
-40 Cel |
Tin/Lead (Sn85Pb15) |
e0 |
1000 MHz |
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|
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
4 |
GAAS |
1 |
10 dBm |
1.38 |
150 mA |
COMPONENT |
5 |
DIE OR CHIP |
50 ohm |
85 Cel |
15 dB |
-55 Cel |
5000 MHz |
20000 MHz |
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|
Analog Devices |
WIDE BAND MEDIUM POWER |
12 dBm |
COMPONENT |
50 ohm |
85 Cel |
18 dB |
-55 Cel |
Matte Tin (Sn) - annealed |
e3 |
6000 MHz |
9500 MHz |
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Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
GAAS |
1 |
20 dBm |
COMPONENT |
7 |
LCC32,.2SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
19 dB |
-40 Cel |
Tin/Lead (Sn/Pb) |
e0 |
9000 MHz |
12000 MHz |
||||||||
|
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
12 |
CERAMIC |
GAAS |
1 |
5 |
LCC12,.12SQ,20 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
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Analog Devices |
WIDE BAND MEDIUM POWER |
20 dBm |
COMPONENT |
50 ohm |
85 Cel |
19 dB |
-40 Cel |
Tin/Lead (Sn/Pb) |
e0 |
7000 MHz |
9000 MHz |
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Analog Devices |
WIDE BAND MEDIUM POWER |
8 dBm |
COMPONENT |
200 ohm |
85 Cel |
19 dB |
-40 Cel |
TIN LEAD |
e0 |
1000 MHz |
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|
Analog Devices |
WIDE BAND MEDIUM POWER |
10 dBm |
COMPONENT |
50 ohm |
85 Cel |
17.4 dB |
-40 Cel |
Matte Tin (Sn) |
e3 |
50 MHz |
6000 MHz |
|||||||||||||||
|
Analog Devices |
WIDE BAND MEDIUM POWER |
20 dBm |
COMPONENT |
50 ohm |
85 Cel |
14 dB |
-55 Cel |
Gold (Au) |
e4 |
27000 MHz |
34000 MHz |
|||||||||||||||
|
Analog Devices |
WIDE BAND MEDIUM POWER |
28 dBm |
COMPONENT |
50 ohm |
85 Cel |
10 dB |
-40 Cel |
Matte Tin (Sn) |
e3 |
12000 MHz |
16000 MHz |
|||||||||||||||
|
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
GAAS |
1 |
12 dBm |
COMPONENT |
7 |
LCC32,.2SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
18 dB |
-55 Cel |
Matte Tin (Sn) - annealed |
e3 |
6000 MHz |
9500 MHz |
|||||||
Analog Devices |
WIDE BAND MEDIUM POWER |
||||||||||||||||||||||||||
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
8 |
GAAS |
1 |
1.08 |
COMPONENT |
10 |
DIE OR CHIP |
50 ohm |
9.5 dB |
0 MHz |
48000 MHz |
||||||||||||||
|
Analog Devices |
WIDE BAND MEDIUM POWER |
27 dBm |
COMPONENT |
50 ohm |
85 Cel |
8.5 dB |
-55 Cel |
0 MHz |
10000 MHz |
|||||||||||||||||
|
Analog Devices |
WIDE BAND MEDIUM POWER |
20 dBm |
COMPONENT |
50 ohm |
85 Cel |
19 dB |
-40 Cel |
Matte Tin (Sn) - annealed |
e3 |
9000 MHz |
12000 MHz |
|||||||||||||||
|
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
25 dBm |
175 mA |
COMPONENT |
5 |
TO-243 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
11 dB |
-40 Cel |
MATTE TIN |
e3 |
400 MHz |
2500 MHz |
||||||
|
Analog Devices |
WIDE BAND MEDIUM POWER |
8 dBm |
COMPONENT |
50 ohm |
85 Cel |
25.5 dB |
-40 Cel |
Matte Tin (Sn) |
e3 |
700 MHz |
2700 MHz |
|||||||||||||||
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
31 dBm |
COMPONENT |
5 |
TO-243 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
7 dB |
-40 Cel |
TIN LEAD |
e0 |
400 MHz |
2200 MHz |
||||||||
|
Analog Devices |
WIDE BAND MEDIUM POWER |
20 dBm |
COMPONENT |
50 ohm |
85 Cel |
12 dB |
-40 Cel |
MATTE TIN |
LOW NOISE |
e3 |
40 MHz |
1000 MHz |
||||||||||||||
Analog Devices |
WIDE BAND MEDIUM POWER |
20 dBm |
COMPONENT |
50 ohm |
85 Cel |
25 dB |
-55 Cel |
27300 MHz |
33500 MHz |
||||||||||||||||||
|
Analog Devices |
WIDE BAND MEDIUM POWER |
10 dBm |
COMPONENT |
50 ohm |
85 Cel |
13 dB |
-40 Cel |
MATTE TIN |
WAFFLE PACK |
e3 |
0 MHz |
1000 MHz |
||||||||||||||
Analog Devices |
WIDE BAND MEDIUM POWER |
32 dBm |
COMPONENT |
50 ohm |
85 Cel |
6 dB |
-40 Cel |
Tin/Lead (Sn/Pb) |
e0 |
400 MHz |
2200 MHz |
||||||||||||||||
|
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
BICMOS |
100 mA |
5 |
LCC24,.16SQ,20 |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
MATTE TIN |
e3 |
|||||||||||||
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
GAAS |
1 |
27 dBm |
COMPONENT |
12 |
LCC32,.2SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
150 Cel |
9.5 dB |
-55 Cel |
Tin/Lead (Sn/Pb) |
e0 |
0 MHz |
10000 MHz |
||||||||
|
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
5 dBm |
11 mA |
COMPONENT |
3 |
TSSOP6,.08 |
50 ohm |
85 Cel |
15 dB |
-40 Cel |
NICKEL PALLADIUM GOLD |
e4 |
2400 MHz |
2500 MHz |
|||||||
|
Analog Devices |
WIDE BAND MEDIUM POWER |
13 dBm |
1.5 |
COMPONENT |
50 ohm |
85 Cel |
24 dB |
-40 Cel |
Matte Tin (Sn) - annealed |
e3 |
800 MHz |
1000 MHz |
||||||||||||||
Analog Devices |
WIDE BAND MEDIUM POWER |
30 dBm |
TIN LEAD |
e0 |
0 MHz |
1000 MHz |
RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.
The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.
RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.