Part | RoHS | Manufacturer | RF or Microwave Device Type | Mounting Feature | No. of Terminals | Package Body Material | Technology | Screening Level | Total Dose (V) | Maximum Supply Voltage | No. of Functions | Maximum Input Power (CW) | Maximum Voltage Standing Wave Ratio | Maximum Supply Current | Construction | Power Supplies (V) | Package Equivalence Code | Characteristic Impedance | Sub-Category | Maximum Operating Temperature | Gain | Minimum Operating Temperature | Terminal Finish | Additional Features | JESD-609 Code | Minimum Operating Frequency | Maximum Operating Frequency |
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Analog Devices |
WIDE BAND LOW POWER |
NICKEL PALLADIUM GOLD |
e4 |
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Analog Devices |
WIDE BAND LOW POWER |
15 dBm |
COMPONENT |
50 ohm |
85 Cel |
16 dB |
-40 Cel |
5000 MHz |
6000 MHz |
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|
Analog Devices |
WIDE BAND MEDIUM POWER |
20 dBm |
COMPONENT |
50 ohm |
85 Cel |
15.5 dB |
-40 Cel |
Matte Tin (Sn) - annealed |
e3 |
800 MHz |
1000 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
NICKEL GOLD PALLADIUM |
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|
Analog Devices |
WIDE BAND LOW POWER |
10 dBm |
50 ohm |
85 Cel |
-40 Cel |
Matte Tin (Sn) - annealed |
e3 |
500 MHz |
2500 MHz |
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|
Analog Devices |
NARROW BAND MEDIUM POWER |
20 dBm |
COMPONENT |
50 ohm |
85 Cel |
13.5 dB |
-40 Cel |
Matte Tin (Sn) - annealed |
e3 |
1700 MHz |
2500 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
Matte Tin (Sn) - annealed |
e3 |
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|
Analog Devices |
NARROW BAND LOW POWER |
13 dBm |
2.5 |
COMPONENT |
50 ohm |
85 Cel |
23 dB |
-40 Cel |
Matte Tin (Sn) - annealed |
e3 |
824 MHz |
849 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
Matte Tin (Sn) - annealed |
e3 |
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|
Analog Devices |
WIDE BAND LOW POWER |
13 dBm |
1.3 |
COMPONENT |
50 ohm |
85 Cel |
16.5 dB |
-40 Cel |
Matte Tin (Sn) - annealed |
e3 |
800 MHz |
1000 MHz |
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|
Analog Devices |
WIDE BAND MEDIUM POWER |
15 dBm |
2 |
COMPONENT |
75 ohm |
85 Cel |
7.1 dB |
-40 Cel |
Matte Tin (Sn) - annealed |
e3 |
44 MHz |
878 MHz |
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|
Analog Devices |
NARROW BAND MEDIUM POWER |
20 dBm |
COMPONENT |
50 ohm |
85 Cel |
13.5 dB |
-40 Cel |
TIN LEAD |
e0 |
1700 MHz |
2500 MHz |
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|
Analog Devices |
NARROW BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BICMOS |
1 |
5 dBm |
COMPONENT |
1.8/3 |
BGA6,2X3,16 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
17.7 dB |
-40 Cel |
TIN SILVER COPPER NICKEL |
CMOS COMPATIBLE |
e2 |
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Analog Devices |
NARROW BAND LOW POWER |
TIN LEAD |
ULTRA LOW NOISE |
e0 |
400 MHz |
1500 MHz |
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|
Analog Devices |
NARROW BAND LOW POWER |
6 dBm |
2.5 |
COMPONENT |
50 ohm |
85 Cel |
23.5 dB |
-40 Cel |
Matte Tin (Sn) - annealed |
e3 |
887 MHz |
925 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
NICKEL PALLADIUM GOLD |
e4 |
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|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
24 |
PHEMT |
1 |
1.5 |
COMPONENT |
3 |
LCC24,.2SQ,25 |
50 ohm |
85 Cel |
21 dB |
-40 Cel |
20000 MHz |
54000 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
5 dBm |
1.25 |
11 mA |
COMPONENT |
3 |
TSOP6,.11,37 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
11 dB |
-40 Cel |
TIN LEAD |
LOW NOISE |
e0 |
800 MHz |
1000 MHz |
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Analog Devices |
NARROW BAND LOW POWER |
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Analog Devices |
WIDE BAND LOW POWER |
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Analog Devices |
WIDE BAND LOW POWER |
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Analog Devices |
NARROW BAND MEDIUM POWER |
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Analog Devices |
WIDE BAND LOW POWER |
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Analog Devices |
NARROW BAND LOW POWER |
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Analog Devices |
WIDE BAND MEDIUM POWER |
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Analog Devices |
WIDE BAND LOW POWER |
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Analog Devices |
WIDE BAND LOW POWER |
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|
Onsemi |
WIDE BAND LOW POWER |
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|
Onsemi |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
1 |
28 mA |
COMPONENT |
5 |
FL6,.06,25 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
30.5 dB |
-40 Cel |
TIN BISMUTH |
e6 |
100 MHz |
3000 MHz |
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Onsemi |
WIDE BAND LOW POWER |
COMPONENT |
50 ohm |
85 Cel |
21 dB |
-40 Cel |
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Onsemi |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
1 |
28 mA |
5 |
FL6,.06,25 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
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Onsemi |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
GAAS |
1 |
70 mA |
3 |
TSOP6,.11,37 |
RF/Microwave Amplifiers |
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Onsemi |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
1 |
0 dBm |
8 mA |
COMPONENT |
3 |
TSSOP6,.08 |
50 ohm |
85 Cel |
20 dB |
-40 Cel |
2500 MHz |
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Onsemi |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
1 |
25 mA |
5 |
TSSOP6,.08 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
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|
Onsemi |
WIDE BAND LOW POWER |
COMPONENT |
50 ohm |
85 Cel |
21.5 dB |
-40 Cel |
Tin/Bismuth (Sn/Bi) |
e6 |
100 MHz |
3000 MHz |
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Onsemi |
SURFACE MOUNT |
4 |
PLASTIC/EPOXY |
1 |
5 |
FL4,.06 |
RF/Microwave Amplifiers |
70 Cel |
-20 Cel |
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Onsemi |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
1 |
0 dBm |
15 mA |
COMPONENT |
3 |
TSSOP6,.08 |
50 ohm |
20 dB |
10 MHz |
2000 MHz |
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Onsemi |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
1 |
7.7 mA |
COMPONENT |
3 |
FL6,.06,25 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
21 dB |
-40 Cel |
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Onsemi |
WIDE BAND LOW POWER |
COMPONENT |
85 Cel |
21.5 dB |
-40 Cel |
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Onsemi |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
12.6 mA |
COMPONENT |
5 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
21.5 dB |
-40 Cel |
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|
Onsemi |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
1 |
20.5 mA |
3 |
FL6,.06,25 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
Tin/Bismuth (Sn/Bi) |
e6 |
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Onsemi |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
1 |
0 dBm |
8 mA |
COMPONENT |
3 |
TSSOP6,.08 |
50 ohm |
85 Cel |
12 dB |
-40 Cel |
3000 MHz |
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|
Onsemi |
WIDE BAND LOW POWER |
Tin/Bismuth (Sn/Bi) |
e6 |
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|
Onsemi |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
AEC-Q100 |
1 |
28 mA |
COMPONENT |
5 |
FL6,06,25 |
50 ohm |
125 Cel |
33.5 dB |
-40 Cel |
100 MHz |
3000 MHz |
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Onsemi |
WIDE BAND LOW POWER |
COMPONENT |
85 Cel |
21.5 dB |
-40 Cel |
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|
Onsemi |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
AEC-Q100 |
1 |
20.5 mA |
COMPONENT |
3 |
FL6,06,25 |
50 ohm |
85 Cel |
24 dB |
-40 Cel |
100 MHz |
3600 MHz |
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Onsemi |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
1 |
20.5 mA |
COMPONENT |
3 |
FL6,.06,25 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
21 dB |
-40 Cel |
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Onsemi |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
1 |
0 dBm |
5 mA |
COMPONENT |
3 |
TSSOP6,.08 |
50 ohm |
85 Cel |
14 dB |
-40 Cel |
2000 MHz |
RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.
The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.
RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.