RF & Microwave Amplifiers

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	Screening Level	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Gain	Minimum Operating Temperature	Terminal Finish	Additional Features	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
SE5212AN	NXP Semiconductors	WIDE BAND LOW POWER															125 Cel		-55 Cel		LOW NOISE		100 MHz
BGD906,112	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID					435 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	22 dB	-20 Cel	Gold (Au)	LOW NOISE, HIGH RELIABILITY	e4	40 MHz	900 MHz
BGY785A,112	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID					240 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	18.5 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	750 MHz
MRFIC0930DMR2	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS			3 dBm		12 mA	COMPONENT	2.8	TSSOP8,.19		RF/Microwave Amplifiers	70 Cel	17.5 dB	-30 Cel	Tin/Lead (Sn/Pb)	LOW NOISE	e0	800 MHz	1000 MHz
BGY122D	NXP Semiconductors	NARROW BAND HIGH POWER																					898 MHz	928 MHz
NE5204AN-T	NXP Semiconductors	WIDE BAND LOW POWER								1.5		COMPONENT			50 ohm		70 Cel		0 Cel				0 MHz	350 MHz
BGU6005/N2	NXP Semiconductors	NARROW BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY		IEC-60134	1	10 dBm	1.43		COMPONENT	1.8/2.85	SOLCC6,.04,20	50 ohm		150 Cel	17.5 dB		Tin (Sn)		e3	1559 MHz	1610 MHz
BYG118A	NXP Semiconductors	NARROW BAND HIGH POWER																					824 MHz	849 MHz
BGY681	NXP Semiconductors	WIDE BAND MEDIUM POWER										MODULE			75 ohm		100 Cel	12.7 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	600 MHz
934056630125	NXP Semiconductors	WIDE BAND LOW POWER							10 dBm			COMPONENT			50 ohm			23.2 dB		TIN		e3	1000 MHz	2000 MHz
SA2410BE-T	NXP Semiconductors	WIDE BAND LOW POWER										COMPONENT			50 ohm		85 Cel	29 dB	-40 Cel				2400 MHz	2500 MHz
934068532115	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY		IEC-60134	1	26 dBm	1.22	6.6 mA	COMPONENT	0.8/1.8,2.8	SOLCC6,.03,16	50 ohm		85 Cel	12.5 dB	-40 Cel				728 MHz	960 MHz
AFSC5G40E38T2	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	26	PLASTIC/EPOXY	LDMOS		1				COMPONENT	28	LCC26,.24X.4,40	50 ohm		125 Cel	27.1 dB					3700 MHz	4000 MHz
OM2081/87	NXP Semiconductors	WIDE BAND HIGH POWER								1.3		MODULE			75 ohm								40 MHz	860 MHz
BGY588	NXP Semiconductors	WIDE BAND HIGH POWER										MODULE			75 ohm		100 Cel	35 dB	-20 Cel		LOW NOISE		40 MHz	550 MHz
934013320112	NXP Semiconductors	WIDE BAND MEDIUM POWER										MODULE			75 ohm		100 Cel	17.3 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	860 MHz
934055918112	NXP Semiconductors	WIDE BAND HIGH POWER										MODULE			75 ohm		100 Cel	19 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	860 MHz
SA5219D,602	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	BIPOLAR					50 mA	COMPONENT	5	SOP16,.25	50 ohm	RF/Microwave Amplifiers	85 Cel		-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)		e4	0 MHz	700 MHz
BGD714,112	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID					410 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	20.8 dB	-20 Cel	Gold (Au)	LOW NOISE, HIGH RELIABILITY	e4	40 MHz	750 MHz
BGA7127	NXP Semiconductors	WIDE BAND MEDIUM POWER							25 dBm			COMPONENT			50 ohm			10.5 dB					400 MHz	2700 MHz
BGY240S	NXP Semiconductors	NARROW BAND HIGH POWER		4	PLASTIC/EPOXY	HYBRID		1	7 dBm	3			3.5	MODULE,4LEAD,.51	50 ohm	RF/Microwave Amplifiers	100 Cel	35 dB	-30 Cel				890 MHz	915 MHz
BGD704N	NXP Semiconductors	WIDE BAND LOW POWER										MODULE			75 ohm		100 Cel	20 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	750 MHz
MRFIC0915T1	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	BIPOLAR			10 dBm		2.5 mA	COMPONENT	2.7	SOT-143R	50 ohm	RF/Microwave Amplifiers	100 Cel	5 dB	-40 Cel	Tin/Lead (Sn/Pb)		e0	100 MHz	2500 MHz
MWE6IC9080NR1	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY	MOS		1	20.5 dBm	10		COMPONENT	28	FLNG,.67"H.SPACE	50 ohm	RF/Microwave Amplifiers	150 Cel	27 dB		Matte Tin (Sn)		e3	865 MHz	960 MHz
BGY787,112	NXP Semiconductors	WIDE BAND MEDIUM POWER			PLASTIC/EPOXY	HYBRID					240 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	21.5 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	750 MHz
BGA3012,115	NXP Semiconductors		SURFACE MOUNT	3	PLASTIC/EPOXY			1			125 mA		8	TO-243		RF/Microwave Amplifiers	85 Cel		-40 Cel	TIN		e3
BGY685AL	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID		1			250 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	18.5 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	600 MHz
934019220112	NXP Semiconductors	WIDE BAND HIGH POWER										MODULE			75 ohm		100 Cel	18.5 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	860 MHz
A3I20X050NR1	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	7	PLASTIC/EPOXY	LDMOS		1	20 dBm			COMPONENT	2.15/28		50 ohm		150 Cel	28 dB	-40 Cel	TIN		e3	1800 MHz	2200 MHz
934056629115	NXP Semiconductors	WIDE BAND LOW POWER							10 dBm			COMPONENT			50 ohm			20.8 dB		Pure Tin (Sn)			1000 MHz	2000 MHz
BGA7020,115	NXP Semiconductors		SURFACE MOUNT	3	PLASTIC/EPOXY			1			130 mA		5	TO-243		RF/Microwave Amplifiers
MMG5004NR2	NXP Semiconductors	WIDE BAND MEDIUM POWER										COMPONENT					85 Cel	24 dB	-40 Cel	Matte Tin (Sn)		e3	4900 MHz	5900 MHz
BGD902L,112	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID					380 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	19 dB	-20 Cel	Gold (Au)	LOW NOISE, HIGH RELIABILITY	e4	40 MHz	900 MHz
BGY885A/07,112	NXP Semiconductors				PLASTIC/EPOXY	HYBRID		1			240 mA		24	SOT-115J		RF/Microwave Amplifiers	100 Cel		-20 Cel
934056949115	NXP Semiconductors	WIDE BAND LOW POWER							10 dBm			COMPONENT			50 ohm			18 dB		Tin (Sn)		e3	100 MHz	3000 MHz
BLM6G22-30	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	LDMOS	IEC-60134	1		5		COMPONENT			50 ohm		200 Cel	27.5 dB		TIN			2100 MHz	2200 MHz
BGE887	NXP Semiconductors	WIDE BAND LOW POWER										MODULE			75 ohm		100 Cel	22.5 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		470 MHz	860 MHz
934065142112	NXP Semiconductors	NARROW BAND HIGH POWER										MODULE			75 ohm		100 Cel	32 dB	-20 Cel	GOLD	LOW NOISE, HIGH RELIABILITY	e4	40 MHz	1003 MHz
OM956/1	NXP Semiconductors		SURFACE MOUNT	10	CERAMIC	HYBRID							12	GWDIP10,.75		RF/Microwave Amplifiers	70 Cel		-20 Cel	Tin/Lead (Sn/Pb)		e0
OM2082/87	NXP Semiconductors	WIDE BAND HIGH POWER								1.4		MODULE			75 ohm								40 MHz	860 MHz
934056418112	NXP Semiconductors	WIDE BAND HIGH POWER										MODULE			75 ohm		100 Cel	29 dB	-20 Cel		LOW NOISE		40 MHz	750 MHz
934055930127	NXP Semiconductors	NARROW BAND HIGH POWER							20.79 dBm	2		COMPONENT			50 ohm		90 Cel	28 dB	-10 Cel				1805 MHz	1990 MHz
BGY110G	NXP Semiconductors	NARROW BAND MEDIUM POWER							4.77 dBm	2		COMPONENT			50 ohm		90 Cel	32.3 dB					902 MHz	928 MHz
BGY581	NXP Semiconductors	WIDE BAND LOW POWER										MODULE			75 ohm		100 Cel	12.5 dB	-20 Cel		LOW NOISE		40 MHz	550 MHz
BGA6289	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY			1	15 dBm		96 mA	COMPONENT	8	TO-243	50 ohm	RF/Microwave Amplifiers		12 dB		Tin (Sn)		e3	850 MHz	2500 MHz
934069005115	NXP Semiconductors	NARROW BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY		IEC-60134	1	10 dBm	1.78	1.6 mA	COMPONENT	0.8,1.8/2.85	SOLCC6,.03,16	50 ohm		85 Cel	14.5 dB	-40 Cel	Tin (Sn)		e3	1559 MHz	1610 MHz
934057014127	NXP Semiconductors	NARROW BAND HIGH POWER							20 dBm	2		COMPONENT			50 ohm		90 Cel	28 dB	-20 Cel				869 MHz	894 MHz
934055389112	NXP Semiconductors	WIDE BAND HIGH POWER										MODULE			75 ohm		90 Cel	21.5 dB	-20 Cel		LOW NOISE		5 MHz	200 MHz

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.