RF & Microwave Amplifiers

Reset All

Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Gain	Minimum Operating Temperature	Terminal Finish	Additional Features	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
A3M34TL139T2	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	26	PLASTIC/EPOXY	LDMOS	1				COMPONENT	27	LCC26,.24X.4,20	50 ohm		125 Cel	25.6 dB			I/P POWER-MAX (PEAK)=25DBM		3300 MHz	3580 MHz
BGD904	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID		21.25 dBm		435 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	20.5 dB	-20 Cel	Gold (Au)	LOW NOISE, HIGH RELIABILITY	e4	40 MHz	900 MHz
MWE6IC9080GNR1	NXP Semiconductors	NARROW BAND HIGH POWER						20.5 dBm	10		COMPONENT			50 ohm		150 Cel	27 dB		Matte Tin (Sn)		e3	865 MHz	960 MHz
934055567112	NXP Semiconductors	WIDE BAND HIGH POWER									MODULE			75 ohm		100 Cel	19 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	900 MHz
BGU6102	NXP Semiconductors	WIDE BAND LOW POWER									COMPONENT			50 ohm		85 Cel	5.5 dB	-40 Cel	Tin (Sn)		e3	40 MHz	4000 MHz
A2I35H060NR1	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	17	PLASTIC/EPOXY	LDMOS	1	26 dBm	10		COMPONENT	28		50 ohm		150 Cel	23 dB	-40 Cel	TIN		e3	3400 MHz	3800 MHz
BGY133	NXP Semiconductors	NARROW BAND HIGH POWER						23 dBm	3		COMPONENT			50 ohm		90 Cel	22.6 dB	-20 Cel				80 MHz	108 MHz
934068188115	NXP Semiconductors	WIDE BAND LOW POWER
MW4IC001MR4	NXP Semiconductors	WIDE BAND MEDIUM POWER									COMPONENT			50 ohm			12 dB		Tin/Lead (Sn/Pb)		e0	800 MHz	2170 MHz
MRFIC0919R2	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS	1	12 dBm	10		COMPONENT	3.6	TSSOP16,.25	50 ohm	RF/Microwave Amplifiers	85 Cel		-40 Cel	Tin/Lead (Sn/Pb)		e0	880 MHz	915 MHz
A3M35TL039T2	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	26	PLASTIC/EPOXY	LDMOS	1				COMPONENT	26	LCC26,.24X.4,40	50 ohm		125 Cel	26.5 dB			I/P POWER-MAX (PEAK)=25DBM		3300 MHz	3700 MHz
NE5212AFE	NXP Semiconductors	WIDE BAND LOW POWER														70 Cel		0 Cel		LOW NOISE		100 MHz
BGY143	NXP Semiconductors	NARROW BAND HIGH POWER						24.8 dBm	3		COMPONENT			50 ohm		90 Cel		-20 Cel				146 MHz	174 MHz
BGY152A	NXP Semiconductors	NARROW BAND HIGH POWER						7 dBm	2		COMPONENT			50 ohm		100 Cel	38.5 dB	-30 Cel				400 MHz	470 MHz
AFIC31025NR1	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	17	PLASTIC/EPOXY	LDMOS	2	20 dBm	10		COMPONENT	28		50 ohm		150 Cel	30.5 dB	-40 Cel	TIN		e3	2400 MHz	3100 MHz
BGY67BO/4M	NXP Semiconductors	WIDE BAND LOW POWER						7 dBm			MODULE			75 ohm		85 Cel		-20 Cel		LOW NOISE, HIGH RELIABILITY		5 MHz	400 MHz
TDA8011TD-T	NXP Semiconductors	WIDE BAND LOW POWER														80 Cel	25 dB	-10 Cel		LOW NOISE			860 MHz
BGM1011	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1			32 mA	COMPONENT	5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers		28 dB		Tin (Sn)		e3
A3I35D025WNR1	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	17	PLASTIC/EPOXY	LDMOS	1	28 dBm	10		COMPONENT	28		50 ohm		150 Cel	26.5 dB	-40 Cel	TIN		e3	3200 MHz	4000 MHz
BGY685A-T	NXP Semiconductors	WIDE BAND HIGH POWER									MODULE			75 ohm		100 Cel	19 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	600 MHz
BGU6104	NXP Semiconductors	WIDE BAND LOW POWER									COMPONENT					85 Cel	5 dB	-40 Cel	TIN		e3	40 MHz	4000 MHz
BGY120D	NXP Semiconductors	NARROW BAND MEDIUM POWER						7 dBm	3		COMPONENT			50 ohm		100 Cel	27.8 dB	-30 Cel				898 MHz	928 MHz
BLM7G1822S-40PBY	NXP Semiconductors		SURFACE MOUNT	16	PLASTIC/EPOXY		1					28	FL16(UNSPEC)		RF/Microwave Amplifiers
A2I20D020NR1	NXP Semiconductors	NARROW BAND HIGH POWER																	TIN		e3
BGY145A	NXP Semiconductors	NARROW BAND HIGH POWER						24.77 dBm	2		MODULE			50 ohm		90 Cel						68 MHz	88 MHz
BGM1014,115	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1	-10 dBm		25 mA	COMPONENT	5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	85 Cel	25 dB	-40 Cel	Tin (Sn)	LOW NOISE	e3	100 MHz	3000 MHz
MWE6IC9100GNR1	NXP Semiconductors	NARROW BAND HIGH POWER							10		COMPONENT			50 ohm			31 dB		Matte Tin (Sn)		e3	869 MHz	960 MHz
BGY585	NXP Semiconductors	WIDE BAND LOW POWER						16.25 dBm			MODULE			75 ohm		100 Cel	16.5 dB	-20 Cel		LOW NOISE		40 MHz	550 MHz
BGY46A	NXP Semiconductors	NARROW BAND HIGH POWER						19.5 dBm	2		MODULE			50 ohm		90 Cel		-30 Cel				400 MHz	440 MHz
NE5204D	NXP Semiconductors	WIDE BAND LOW POWER							1.5		COMPONENT			50 ohm		70 Cel	16 dB	0 Cel				0 MHz	350 MHz
934015630112	NXP Semiconductors	WIDE BAND MEDIUM POWER									MODULE			75 ohm		100 Cel	21.5 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	750 MHz
934059508112	NXP Semiconductors	WIDE BAND HIGH POWER						3 dBm	1.25		MODULE			50 ohm		100 Cel	24 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	870 MHz
BGD802	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID				410 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	18.5 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	860 MHz
CGY2013GBE	NXP Semiconductors	NARROW BAND HIGH POWER						2 dBm						50 ohm		85 Cel	35.5 dB	-20 Cel		LOW NOISE		880 MHz	915 MHz
934065354115	NXP Semiconductors	WIDE BAND LOW POWER						10 dBm			COMPONENT			75 ohm		70 Cel	10 dB	-10 Cel	TIN		e3	40 MHz	1000 MHz
934064692112	NXP Semiconductors	NARROW BAND HIGH POWER									MODULE			75 ohm		100 Cel	26.5 dB	-20 Cel	GOLD	LOW NOISE	e4	40 MHz	1003 MHz
MW5IC2030GNBR1	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY	MOS	1	20 dBm	3		COMPONENT	26	FLNG,.8''H SPACE	50 ohm	RF/Microwave Amplifiers		21.5 dB		Matte Tin (Sn)		e3	1930 MHz	1990 MHz
BGY115A	NXP Semiconductors	NARROW BAND MEDIUM POWER						7 dBm	3		COMPONENT			50 ohm		100 Cel	27.8 dB	-30 Cel				824 MHz	849 MHz
934059235112	NXP Semiconductors	WIDE BAND HIGH POWER									MODULE			75 ohm		100 Cel	33.2 dB	-20 Cel		LOW NOISE		40 MHz	750 MHz
BGA7024,135	NXP Semiconductors		SURFACE MOUNT	3	PLASTIC/EPOXY		1			125 mA		5	TO-243		RF/Microwave Amplifiers				TIN		e3
BGD102	NXP Semiconductors	WIDE BAND LOW POWER						16.25 dBm			MODULE			75 ohm		100 Cel		-20 Cel				40 MHz	450 MHz
BGY80	NXP Semiconductors	WIDE BAND MEDIUM POWER									MODULE			75 ohm		100 Cel	12.5 dB	-20 Cel		LOW NOISE		40 MHz	450 MHz
OM2081	NXP Semiconductors	WIDE BAND LOW POWER							1.4		MODULE			75 ohm								40 MHz	860 MHz
BGY120B	NXP Semiconductors	NARROW BAND MEDIUM POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	HYBRID		7 dBm	3	.1 mA	MODULE	3.6	SMSIP4	50 ohm	RF/Microwave Amplifiers	100 Cel		-30 Cel				872 MHz	905 MHz
BGF844,127	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY		1	20 dBm	2	320 mA	COMPONENT	26	FLNG,1.6"H.SPACE	50 ohm	RF/Microwave Amplifiers	90 Cel	28 dB	-20 Cel				869 MHz	894 MHz
NE5205ADT	NXP Semiconductors	WIDE BAND LOW POWER							1.5		COMPONENT			50 ohm		70 Cel	17 dB	0 Cel				550 MHz
BGA6489	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY		1	15 dBm		86 mA	COMPONENT	8	TO-243	50 ohm	RF/Microwave Amplifiers		15 dB		Tin (Sn)		e3	850 MHz	2500 MHz
934059734112	NXP Semiconductors	NARROW BAND LOW POWER									MODULE			75 ohm		100 Cel	19 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	750 MHz

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.