RF & Microwave Amplifiers

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Part RoHS Manufacturer RF or Microwave Device Type Mounting Feature No. of Terminals Package Body Material Technology Screening Level Total Dose (V) Maximum Supply Voltage No. of Functions Maximum Input Power (CW) Maximum Voltage Standing Wave Ratio Maximum Supply Current Construction Power Supplies (V) Package Equivalence Code Characteristic Impedance Sub-Category Maximum Operating Temperature Gain Minimum Operating Temperature Terminal Finish Additional Features JESD-609 Code Minimum Operating Frequency Maximum Operating Frequency

DB-55008L-960

STMicroelectronics

NARROW BAND HIGH POWER

20

COAXIAL

85 Cel

9.5 dB

-20 Cel

860 MHz

960 MHz

DB-57060S-526

STMicroelectronics

NARROW BAND HIGH POWER

43 dBm

20

COMPONENT

15.5 dB

486 MHz

526 MHz

DB-54003L-512

STMicroelectronics

NARROW BAND HIGH POWER

20

COAXIAL

85 Cel

11.7 dB

-20 Cel

380 MHz

512 MHz

TSTM850-10

STMicroelectronics

NARROW BAND HIGH POWER

MODULE

824 MHz

849 MHz

STM1665-12

STMicroelectronics

NARROW BAND HIGH POWER

PLASTIC/EPOXY

11.17 dBm

2

15,28

FLANGE MT,2.3X0.8

50 ohm

RF/Microwave Amplifiers

70 Cel

30.8 dB

-35 Cel

1626 MHz

1662 MHz

TSTM901-30

STMicroelectronics

NARROW BAND HIGH POWER

PLASTIC/EPOXY

14 dBm

2

26

FLNG,2.4"H.SPACE

50 ohm

RF/Microwave Amplifiers

36 dB

860 MHz

900 MHz

STM376-2

STMicroelectronics

NARROW BAND HIGH POWER

PLASTIC/EPOXY

BIPOLAR

14.77 dBm

1.5

425 mA

20

FLNG,2.21"H.SPACE

50 ohm

RF/Microwave Amplifiers

60 Cel

21 dB

-20 Cel

350 MHz

376 MHz

STM960-10

STMicroelectronics

PLASTIC/EPOXY

26

FLNG,2.4"H.SPACE

RF/Microwave Amplifiers

DB-54003L-880

STMicroelectronics

NARROW BAND HIGH POWER

20

COAXIAL

10 ohm

85 Cel

12.1 dB

-20 Cel

800 MHz

880 MHz

TSH691ID

STMicroelectronics

SURFACE MOUNT

8

PLASTIC/EPOXY

BIPOLAR

2.7

SOP8,.25

RF/Microwave Amplifiers

85 Cel

-35 Cel

Tin/Lead (Sn/Pb)

e0

DB-54008L-175

STMicroelectronics

NARROW BAND HIGH POWER

20

COAXIAL

85 Cel

16.2 dB

-20 Cel

135 MHz

175 MHz

STM961-15

STMicroelectronics

NARROW BAND HIGH POWER

PLASTIC/EPOXY

MODULE

26

MOT CASE 301H-01

RF/Microwave Amplifiers

28 dB

915 MHz

960 MHz

DB-55025-540

STMicroelectronics

NARROW BAND HIGH POWER

20

COAXIAL

85 Cel

12 dB

-20 Cel

460 MHz

540 MHz

DB-54008L-406

STMicroelectronics

NARROW BAND HIGH POWER

20

COAXIAL

85 Cel

13 dB

-20 Cel

400 MHz

420 MHz

STB7720

STMicroelectronics

NARROW BAND LOW POWER

10 dBm

10

COMPONENT

85 Cel

32 dB

-30 Cel

TIN/NICKEL PALLADIUM GOLD

e3/e4

2400 MHz

2500 MHz

DB-55015-165

STMicroelectronics

NARROW BAND HIGH POWER

20

COAXIAL

85 Cel

14.7 dB

-20 Cel

155 MHz

165 MHz

DB-54003L-470

STMicroelectronics

NARROW BAND HIGH POWER

20

COAXIAL

85 Cel

13 dB

-20 Cel

400 MHz

470 MHz

STM901-30

STMicroelectronics

NARROW BAND HIGH POWER

PLASTIC/EPOXY

14 dBm

3

MODULE

26

FLNG,2.4"H.SPACE

50 ohm

RF/Microwave Amplifiers

100 Cel

35 dB

-30 Cel

860 MHz

900 MHz

DB-55003L-512

STMicroelectronics

NARROW BAND HIGH POWER

20

COAXIAL

25 ohm

85 Cel

15.8 dB

-20 Cel

410 MHz

512 MHz

STM900-30

STMicroelectronics

PLASTIC/EPOXY

26

FLNG,2.4"H.SPACE

RF/Microwave Amplifiers

STM1645-30

STMicroelectronics

NARROW BAND HIGH POWER

PLASTIC/EPOXY

HYBRID

13 dBm

2

COMPONENT

12,28

MOT CASE 700-04

50 ohm

RF/Microwave Amplifiers

70 Cel

34.8 dB

-35 Cel

1625 MHz

1665 MHz

DB-54003L-175

STMicroelectronics

NARROW BAND HIGH POWER

20

COAXIAL

50 ohm

85 Cel

15.6 dB

-20 Cel

SMA

135 MHz

175 MHz

TSH690ID

STMicroelectronics

WIDE BAND LOW POWER

SURFACE MOUNT

8

PLASTIC/EPOXY

BIPOLAR

10 dBm

COMPONENT

2.7

SOP8,.25

50 ohm

RF/Microwave Amplifiers

85 Cel

19 dB

-40 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

e4

40 MHz

1000 MHz

DB-54003L-930

STMicroelectronics

NARROW BAND MEDIUM POWER

20

COAXIAL

85 Cel

6.8 dB

-20 Cel

860 MHz

930 MHz

TSTM872-20

STMicroelectronics

NARROW BAND HIGH POWER

PLASTIC/EPOXY

HYBRID

26 dBm

2

MODULE

12.5

MOT CASE 301G-03

50 ohm

RF/Microwave Amplifiers

100 Cel

-30 Cel

806 MHz

870 MHz

STB7001

STMicroelectronics

NARROW BAND LOW POWER

SURFACE MOUNT

8

PLASTIC/EPOXY

BIPOLAR

1

1.5

COMPONENT

2.8

TSSOP8,.19

RF/Microwave Amplifiers

0 dB

THREE GAIN LEVELS-0 DB, 18 DB AND 26 DB TYPICALLY AVAILABLE AT 2.8 VOLTS

925 MHz

960 MHz

SMA661AS

STMicroelectronics

NARROW BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

BICMOS

1

COMPONENT

2.7

FL6,.047,20

50 ohm

RF/Microwave Amplifiers

85 Cel

18 dB

-40 Cel

1500 MHz

1650 MHz

STB7002

STMicroelectronics

NARROW BAND LOW POWER

SURFACE MOUNT

8

PLASTIC/EPOXY

1

1.8

22.5 mA

COMPONENT

2.8

TSSOP8,.19

RF/Microwave Amplifiers

0 dB

THREE GAIN LEVELS-0 DB, 18 DB AND 26 DB TYPICALLY AVAILABLE AT 2.8 VOLTS

1805 MHz

1880 MHz

BGY95A

NXP Semiconductors

NARROW BAND HIGH POWER

16 dBm

2

MODULE

50 ohm

90 Cel

-30 Cel

824 MHz

851 MHz

BGD902

NXP Semiconductors

WIDE BAND HIGH POWER

PLASTIC/EPOXY

HYBRID

16.25 dBm

435 mA

COMPONENT

24

SOT-115J

75 ohm

RF/Microwave Amplifiers

100 Cel

18.2 dB

-20 Cel

LOW NOISE

40 MHz

900 MHz

BGY152B

NXP Semiconductors

NARROW BAND HIGH POWER

7 dBm

2

COMPONENT

50 ohm

100 Cel

38.5 dB

-30 Cel

450 MHz

512 MHz

934064659115

NXP Semiconductors

WIDE BAND LOW POWER

10 dBm

COMPONENT

75 ohm

70 Cel

10 dB

-10 Cel

TIN

e3

40 MHz

1000 MHz

SE5205FE

NXP Semiconductors

WIDE BAND LOW POWER

1.5

COMPONENT

50 ohm

125 Cel

16.5 dB

-55 Cel

0 MHz

400 MHz

933793560112

NXP Semiconductors

WIDE BAND HIGH POWER

MODULE

75 ohm

100 Cel

22 dB

-20 Cel

LOW NOISE

40 MHz

550 MHz

BGD704/07,112

NXP Semiconductors

PLASTIC/EPOXY

HYBRID

1

435 mA

24

SOT-115J

RF/Microwave Amplifiers

934062616112

NXP Semiconductors

NARROW BAND HIGH POWER

MODULE

75 ohm

100 Cel

27 dB

-20 Cel

LOW NOISE, HIGH RELIABILITY

40 MHz

1003 MHz

MW4IC001NR4

NXP Semiconductors

WIDE BAND MEDIUM POWER

COMPONENT

50 ohm

12 dB

Matte Tin (Sn)

e3

800 MHz

2170 MHz

BGY122B

NXP Semiconductors

NARROW BAND MEDIUM POWER

7 dBm

3

MODULE

50 ohm

100 Cel

27.8 dB

-30 Cel

872 MHz

905 MHz

BLM7G1822S-40PBGY

NXP Semiconductors

SURFACE MOUNT

16

PLASTIC/EPOXY

1

28

SOP16(UNSPEC)

RF/Microwave Amplifiers

SA5219D,623

NXP Semiconductors

WIDE BAND LOW POWER

COMPONENT

50 ohm

85 Cel

-40 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

e4

0 MHz

700 MHz

BGM1011,115

NXP Semiconductors

WIDE BAND LOW POWER

COMPONENT

50 ohm

28 dB

Tin (Sn)

e3

SE5205AN

NXP Semiconductors

WIDE BAND LOW POWER

1.5

COMPONENT

50 ohm

125 Cel

-55 Cel

0 MHz

600 MHz

BGY883

NXP Semiconductors

WIDE BAND MEDIUM POWER

PLASTIC/EPOXY

HYBRID

235 mA

MODULE

24

SOT-115J

75 ohm

RF/Microwave Amplifiers

100 Cel

15 dB

-20 Cel

Gold (Au)

LOW NOISE, HIGH RELIABILITY

e4

40 MHz

860 MHz

BGA7130

NXP Semiconductors

WIDE BAND MEDIUM POWER

934055915112

NXP Semiconductors

WIDE BAND HIGH POWER

MODULE

75 ohm

100 Cel

20.8 dB

-20 Cel

LOW NOISE, HIGH RELIABILITY

40 MHz

750 MHz

934015680112

NXP Semiconductors

WIDE BAND HIGH POWER

MODULE

75 ohm

100 Cel

22 dB

-20 Cel

LOW NOISE, HIGH RELIABILITY

40 MHz

600 MHz

BGY112A

NXP Semiconductors

NARROW BAND HIGH POWER

3 dBm

2

MODULE

50 ohm

90 Cel

68 MHz

88 MHz

BGD814,112

NXP Semiconductors

WIDE BAND HIGH POWER

PLASTIC/EPOXY

HYBRID

21.25 dBm

410 mA

MODULE

24

SOT-115J

75 ohm

RF/Microwave Amplifiers

100 Cel

20.5 dB

-20 Cel

LOW NOISE, HIGH RELIABILITY

40 MHz

870 MHz

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.