RF & Microwave Amplifiers

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Gain	Minimum Operating Temperature	Terminal Finish	Additional Features	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
BGY36	NXP Semiconductors	NARROW BAND HIGH POWER						24.77 dBm	1.5		COMPONENT			50 ohm		90 Cel						148 MHz	174 MHz
BGF844	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY		1	20 dBm	2	320 mA	COMPONENT	26	FLNG,1.6"H.SPACE	50 ohm	RF/Microwave Amplifiers	90 Cel	28 dB	-20 Cel				869 MHz	894 MHz
BGY116E	NXP Semiconductors	NARROW BAND HIGH POWER						10 dBm	3		COMPONENT			50 ohm		100 Cel	37.8 dB	-30 Cel				890 MHz	950 MHz
934064658115	NXP Semiconductors	WIDE BAND LOW POWER						10 dBm			COMPONENT			75 ohm		70 Cel	10 dB	-10 Cel	TIN		e3	40 MHz	1000 MHz
NE5205EC	NXP Semiconductors	WIDE BAND LOW POWER							1.5		COMPONENT			50 ohm		70 Cel		0 Cel				0 MHz	600 MHz
BGY68	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY	HYBRID		6.25 dBm		135 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	29.2 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		5 MHz	75 MHz
934055501112	NXP Semiconductors	WIDE BAND HIGH POWER									MODULE			75 ohm		100 Cel	25.6 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	860 MHz
OM2052	NXP Semiconductors	WIDE BAND LOW POWER							2.1		MODULE						27 dB			LOW NOISE		40 MHz	860 MHz
935030700602	NXP Semiconductors	WIDE BAND LOW POWER									COMPONENT			50 ohm		85 Cel		-40 Cel
BGY687B	NXP Semiconductors	WIDE BAND MEDIUM POWER			PLASTIC/EPOXY	HYBRID	1			340 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	27.8 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	600 MHz
NE5205N	NXP Semiconductors	WIDE BAND LOW POWER							1.5		COMPONENT			50 ohm		70 Cel	16.5 dB	0 Cel				0 MHz	550 MHz
934056726112	NXP Semiconductors	NARROW BAND MEDIUM POWER									COMPONENT			75 ohm		100 Cel	25 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		5 MHz	65 MHz
BGY114B	NXP Semiconductors	NARROW BAND HIGH POWER						4.77 dBm	2		COMPONENT			50 ohm		100 Cel	37.8 dB	-30 Cel				872 MHz	905 MHz
934065227115	NXP Semiconductors	NARROW BAND LOW POWER						0 dBm			COMPONENT			50 ohm		125 Cel	13 dB	-40 Cel	TIN		e3	1559 MHz	1610 MHz
CGY2015HN	NXP Semiconductors	NARROW BAND LOW POWER						10 dBm	10		COMPONENT			50 ohm						IT CAN ALSO OPERATE AT 1710 TO 1910 MHZ		880 MHz	915 MHz
MW4IC2230GNBR1	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY		1	20 dBm	3		COMPONENT	28	FLNG,.8''H SPACE	50 ohm	RF/Microwave Amplifiers	85 Cel	29 dB	-10 Cel	Matte Tin (Sn)		e3	2110 MHz	2170 MHz
934056494112	NXP Semiconductors	WIDE BAND HIGH POWER									MODULE			75 ohm		100 Cel	22 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	870 MHz
MRFIC1819R2	NXP Semiconductors	NARROW BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS	1	12 dBm	10		COMPONENT	3.6	TSSOP16,.25	50 ohm	RF/Microwave Amplifiers	85 Cel		-40 Cel	Tin/Lead (Sn/Pb)		e0	1700 MHz	1900 MHz
NE5219D	NXP Semiconductors	WIDE BAND LOW POWER									COMPONENT			50 ohm		70 Cel		0 Cel				0 MHz	700 MHz
BGX885N	NXP Semiconductors	WIDE BAND MEDIUM POWER			PLASTIC/EPOXY	HYBRID				240 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	17.3 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	860 MHz
BGY288	NXP Semiconductors	NARROW BAND HIGH POWER						10 dBm	3		COMPONENT			50 ohm		100 Cel	31 dB	-30 Cel		HIGH RELIABILITY, IT CAN ALSO OPERATE AT 880 TO 915 MHZ, 1710 TO 1785 MHZ AND 1850 TO 1910 MHZ		824 MHz	849 MHz
BGY115D	NXP Semiconductors	NARROW BAND MEDIUM POWER						7 dBm	3		COMPONENT			50 ohm		100 Cel	27.8 dB	-30 Cel				902 MHz	928 MHz
MRFIC0970R2	NXP Semiconductors	NARROW BAND HIGH POWER						15 dBm	10		COMPONENT			50 ohm		85 Cel		-40 Cel				880 MHz	915 MHz
934051230112	NXP Semiconductors	WIDE BAND HIGH POWER									MODULE			75 ohm		100 Cel	18.5 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	750 MHz
BGY584	NXP Semiconductors	WIDE BAND LOW POWER						16.25 dBm			MODULE			75 ohm		100 Cel		-20 Cel		LOWNOISE		40 MHz	550 MHz
BGY210	NXP Semiconductors	NARROW BAND HIGH POWER						9.03 dBm	3		COMPONENT			50 ohm		100 Cel	27 dB	-30 Cel				1710 MHz	1785 MHz
BGY240	NXP Semiconductors	NARROW BAND HIGH POWER						7 dBm	3					50 ohm		100 Cel	35 dB	-30 Cel				890 MHz	915 MHz
BGY203	NXP Semiconductors	NARROW BAND HIGH POWER						3 dBm	2		COMPONENT			50 ohm		100 Cel	35 dB	-30 Cel				880 MHz	915 MHz
MWE6IC9080NBR1	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY	MOS	1	20.5 dBm	10		MODULE	28	FLNG,.8''H SPACE	50 ohm	RF/Microwave Amplifiers	150 Cel	27 dB		MATTE TIN		e3	865 MHz	960 MHz
SA5219D-T	NXP Semiconductors	WIDE BAND LOW POWER									COMPONENT			50 ohm		85 Cel		-40 Cel				0 MHz	700 MHz
934019230112	NXP Semiconductors	WIDE BAND HIGH POWER									MODULE			75 ohm		100 Cel	20 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	750 MHz
OM2050	NXP Semiconductors	WIDE BAND LOW POWER							1.9		MODULE						18 dB			LOW NOISE		40 MHz	860 MHz
934055187112	NXP Semiconductors	WIDE BAND HIGH POWER									MODULE			75 ohm		100 Cel	20.5 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	860 MHz
BGY584A	NXP Semiconductors	WIDE BAND LOW POWER									MODULE			75 ohm		100 Cel	18.8 dB	-20 Cel		LOW NOISE		40 MHz	550 MHz
MWIC930NR1,528	NXP Semiconductors	WIDE BAND HIGH POWER
BGA7017,115	NXP Semiconductors		SURFACE MOUNT	3	PLASTIC/EPOXY		1			100 mA		5	TO-243		RF/Microwave Amplifiers
BGY113A	NXP Semiconductors	NARROW BAND HIGH POWER						7 dBm	2		COMPONENT			50 ohm		90 Cel	38.5 dB	-30 Cel				400 MHz	440 MHz
MW6IC1940GNBR1	NXP Semiconductors	NARROW BAND MEDIUM POWER			PLASTIC/EPOXY	MOS	1	20 dBm	3	440 mA	COMPONENT	28	MOT CASE 1329A-03	50 ohm	RF/Microwave Amplifiers	150 Cel	26 dB		Matte Tin (Sn)		e3	1920 MHz	2000 MHz
SA5205N	NXP Semiconductors	WIDE BAND LOW POWER							1.5		COMPONENT			50 ohm		85 Cel	16.5 dB	-40 Cel				0 MHz	550 MHz
BGD714	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID				410 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	20.8 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	750 MHz
OM322	NXP Semiconductors				PLASTIC/EPOXY	HYBRID						24	FLANGE MT,1.5X1.0		RF/Microwave Amplifiers	70 Cel		-20 Cel
934057502135	NXP Semiconductors	WIDE BAND LOW POWER						15 dBm			COMPONENT			50 ohm			15 dB		TIN		e3	850 MHz	2500 MHz
MW4IC2020MBR1	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY		1	20 dBm	3		COMPONENT	26	FLNG,.8''H SPACE	50 ohm	RF/Microwave Amplifiers	85 Cel	27 dB	-10 Cel	Tin/Lead (Sn/Pb)		e0	1805 MHz	1990 MHz
BGD816	NXP Semiconductors	WIDE BAND HIGH POWER									MODULE			75 ohm		100 Cel	22 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	870 MHz
BGY785A	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID				240 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	18.5 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	750 MHz
BGY1816S	NXP Semiconductors	NARROW BAND HIGH POWER			CERAMIC	HYBRID	1	20.79 dBm	2		MODULE	5,26	FLNG,2.4"H.SPACE	50 ohm	RF/Microwave Amplifiers	90 Cel	29 dB	-10 Cel				1805 MHz	1880 MHz
BGY119D	NXP Semiconductors	NARROW BAND HIGH POWER																				898 MHz	928 MHz
934034300114	NXP Semiconductors	WIDE BAND HIGH POWER									MODULE			75 ohm		100 Cel	34 dB	-20 Cel		LOW NOISE		40 MHz	860 MHz

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.