RF & Microwave Amplifiers

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	Screening Level	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Gain	Minimum Operating Temperature	Terminal Finish	Additional Features	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
BGY119A	NXP Semiconductors	NARROW BAND MEDIUM POWER							7 dBm	3		COMPONENT			50 ohm		100 Cel	27.8 dB	-30 Cel				824 MHz	849 MHz
BGS8324X	NXP Semiconductors	NARROW BAND LOW POWER
A2I20D040NR1	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	17	PLASTIC/EPOXY	LDMOS		1	18 dBm	10		COMPONENT	28		50 ohm		150 Cel	31.5 dB	-40 Cel	TIN		e3	1400 MHz	2200 MHz
SA5204D	NXP Semiconductors	WIDE BAND LOW POWER								1.5		COMPONENT			50 ohm		85 Cel	16 dB	-40 Cel				0 MHz	350 MHz
BGY200	NXP Semiconductors	NARROW BAND HIGH POWER							3 dBm	2					50 ohm		100 Cel	35.5 dB	-30 Cel				890 MHz	915 MHz
934055449112	NXP Semiconductors	WIDE BAND HIGH POWER										MODULE			75 ohm		100 Cel	35 dB	-20 Cel		LOW NOISE		40 MHz	550 MHz
A3I35D012WNR1	NXP Semiconductors	NARROW BAND MEDIUM POWER	SURFACE MOUNT	17	PLASTIC/EPOXY			2	26 dBm			COMPONENT	28	FLNG,.72"H.SPACE	50 ohm		150 Cel	26.5 dB	-40 Cel				3200 MHz	4000 MHz
935056440602	NXP Semiconductors	WIDE BAND LOW POWER										COMPONENT			50 ohm		85 Cel		-40 Cel
OM320	NXP Semiconductors		THROUGH HOLE MOUNT	10	PLASTIC/EPOXY	HYBRID							24	SIP10,.2		RF/Microwave Amplifiers	70 Cel		-20 Cel	Tin/Lead (Sn/Pb)		e0
BGY85	NXP Semiconductors	WIDE BAND LOW POWER			PLASTIC/EPOXY	HYBRID			16.25 dBm		240 mA	MODULE	24	SOT-115C	75 ohm	RF/Microwave Amplifiers	100 Cel	16.5 dB	-20 Cel		LOW NOISE		40 MHz	450 MHz
933793520112	NXP Semiconductors	WIDE BAND HIGH POWER										MODULE			75 ohm		100 Cel	18.8 dB	-20 Cel		LOW NOISE		40 MHz	550 MHz
934065665147	NXP Semiconductors	WIDE BAND LOW POWER										COMPONENT					85 Cel	4 dB	-40 Cel	Tin (Sn)		e3	40 MHz	4000 MHz
BGD802MI	NXP Semiconductors	WIDE BAND HIGH POWER							16.25 dBm			MODULE			75 ohm		100 Cel	18.5 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	860 MHz
A2I09VD015GNR1	NXP Semiconductors	WIDE BAND LOW POWER																		TIN		e3
BGF944	NXP Semiconductors	NARROW BAND HIGH POWER			METAL			1	20 dBm	2	300 mA	COMPONENT	26	FLNG,1.6"H.SPACE	50 ohm	RF/Microwave Amplifiers	90 Cel	27 dB	-20 Cel				920 MHz	960 MHz
934065356115	NXP Semiconductors	NARROW BAND LOW POWER							0 dBm			COMPONENT			50 ohm		85 Cel	16 dB	-40 Cel	TIN		e3	1559 MHz	1610 MHz
BGY685	NXP Semiconductors	WIDE BAND LOW POWER										MODULE			75 ohm		100 Cel	17.8 dB	-20 Cel		LOW NOISE		40 MHz	600 MHz
934055380112	NXP Semiconductors	WIDE BAND HIGH POWER										MODULE			75 ohm		100 Cel	22 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	860 MHz
SA5205D	NXP Semiconductors	WIDE BAND LOW POWER								1.5		COMPONENT			50 ohm		85 Cel	16.5 dB	-40 Cel				0 MHz	550 MHz
934065357115	NXP Semiconductors	NARROW BAND LOW POWER							0 dBm			COMPONENT			50 ohm		125 Cel	16 dB	-40 Cel	TIN		e3	1559 MHz	1610 MHz
CGY2105ATS	NXP Semiconductors	NARROW BAND LOW POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS		2			144 mA	COMPONENT	+-5	SSOP16,.25	50 ohm	RF/Microwave Amplifiers	85 Cel	14.6 dB	-40 Cel		LOW NOISE		1710 MHz	1910 MHz
934056423112	NXP Semiconductors	WIDE BAND HIGH POWER										MODULE			75 ohm		100 Cel	35 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		5 MHz	200 MHz
OM2046	NXP Semiconductors	WIDE BAND LOW POWER								1.5		MODULE			75 ohm								40 MHz	860 MHz
BGU6009/N2	NXP Semiconductors	NARROW BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY		IEC-60134	1	10 dBm	1.78	.002 mA	COMPONENT	1.8	SOLCC6,.03,16	50 ohm								1559 MHz	1610 MHz
BGD816L,112	NXP Semiconductors	WIDE BAND HIGH POWER				HYBRID		1			375 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	22 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	870 MHz
BGY114D	NXP Semiconductors	NARROW BAND HIGH POWER							4.77 dBm	3		COMPONENT			50 ohm		100 Cel	37.8 dB	-30 Cel				800 MHz	870 MHz
BGX881	NXP Semiconductors	WIDE BAND MEDIUM POWER			PLASTIC/EPOXY	HYBRID			16.25 dBm		240 mA	MODULE	24	MOT CASE 714B	75 ohm	RF/Microwave Amplifiers	100 Cel	12 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	860 MHz
OM7820	NXP Semiconductors	NARROW BAND LOW POWER
A2I20H060NR1	NXP Semiconductors	NARROW BAND HIGH POWER																		TIN		e3
OM2083/87	NXP Semiconductors	WIDE BAND HIGH POWER								1.4		MODULE			75 ohm								40 MHz	860 MHz
OM2045	NXP Semiconductors	WIDE BAND LOW POWER								1.4		MODULE						12 dB			LOW NOISE		40 MHz	860 MHz
A2I35H060GNR1	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	17	PLASTIC/EPOXY	LDMOS		1	26 dBm	10		COMPONENT	28		50 ohm		150 Cel	23 dB	-40 Cel	TIN		e3	3400 MHz	3800 MHz
A3I35D012WGNR1	NXP Semiconductors	NARROW BAND MEDIUM POWER	SURFACE MOUNT	17	PLASTIC/EPOXY			2	26 dBm			COMPONENT	28	FLNG,.72"H.SPACE	50 ohm		150 Cel	26.5 dB	-40 Cel				3200 MHz	4000 MHz
BGY148BTRAY	NXP Semiconductors	NARROW BAND HIGH POWER							13 dBm	3		COMPONENT			50 ohm		100 Cel	24.8 dB	-30 Cel				430 MHz	488 MHz
BGY33	NXP Semiconductors	NARROW BAND HIGH POWER							23 dBm	1.5		COMPONENT			50 ohm		90 Cel						80 MHz	108 MHz
A2I09VD050NR1	NXP Semiconductors	WIDE BAND HIGH POWER	SURFACE MOUNT	12	PLASTIC/EPOXY	LDMOS		1	20 dBm	10		COMPONENT	48		50 ohm		150 Cel	35 dB	-40 Cel	TIN		e3	575 MHz	960 MHz
NE5209N	NXP Semiconductors	WIDE BAND LOW POWER										COMPONENT			50 ohm		70 Cel		0 Cel				0 MHz	850 MHz
BGY685A,112	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID					240 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	19 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	600 MHz
NE5205D	NXP Semiconductors	WIDE BAND LOW POWER								1.5		COMPONENT			50 ohm		70 Cel	16.5 dB	0 Cel				0 MHz	550 MHz
BGA3031X	NXP Semiconductors		SURFACE MOUNT	20	PLASTIC/EPOXY			1					5	LCC20,.20SQ,25		RF/Microwave Amplifiers				NICKEL PALLADIUM GOLD SILVER		e4
MRFIC1501R2	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS			3 dBm		7.5 mA	COMPONENT	5	SOP8,.25	50 ohm	RF/Microwave Amplifiers	100 Cel	17 dB	-30 Cel	Tin/Lead (Sn/Pb)		e0	1000 MHz	2000 MHz
934023590112	NXP Semiconductors	WIDE BAND HIGH POWER										MODULE			75 ohm		100 Cel	18.5 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	750 MHz
BGY888,112	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID					340 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	34 dB	-20 Cel		LOW NOISE		40 MHz	860 MHz
BGD804N	NXP Semiconductors	WIDE BAND HIGH POWER										MODULE			75 ohm		100 Cel	20 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	860 MHz
934044650112	NXP Semiconductors	WIDE BAND HIGH POWER										MODULE			75 ohm		100 Cel	20 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	860 MHz
BGE884	NXP Semiconductors	WIDE BAND LOW POWER							16.25 dBm			MODULE			75 ohm		100 Cel		-20 Cel		LOWNOISE		40 MHz	860 MHz
934056816112	NXP Semiconductors	WIDE BAND HIGH POWER										MODULE			75 ohm		100 Cel	28 dB	-20 Cel		LOW NOISE		40 MHz	870 MHz
MRFIC1856R2	NXP Semiconductors	NARROW BAND MEDIUM POWER	SURFACE MOUNT	20	PLASTIC/EPOXY	GAAS		2	15 dBm	10		COMPONENT	-4.4,4.8	TSSOP20,.25		RF/Microwave Amplifiers	85 Cel	29 dB	-35 Cel	Tin/Lead (Sn/Pb)	IT CAN ALSO OPERATE AT 1850 TO 1910 MHZ	e0	824 MHz	849 MHz

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.