RF & Microwave Amplifiers

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Gain	Minimum Operating Temperature	Terminal Finish	Additional Features	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
OM956/11	NXP Semiconductors	WIDE BAND LOW POWER							1.7		MODULE			75 ohm								950 MHz	2050 MHz
BGY885A	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID				240 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	18.5 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	860 MHz
934039280112	NXP Semiconductors	WIDE BAND HIGH POWER									MODULE			75 ohm		100 Cel	21.5 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	860 MHz
BGY145C	NXP Semiconductors	NARROW BAND HIGH POWER						26.53 dBm	2		MODULE			50 ohm		90 Cel						174 MHz	200 MHz
AFSC5G37E38T2	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	26	PLASTIC/EPOXY	LDMOS	1				COMPONENT	29	LCC26,.24X.4,20	50 ohm		125 Cel	25.4 dB		NICKEL PALLADIUM GOLD		e4	3600 MHz	3800 MHz
BGE788	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID				320 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	34 dB	-20 Cel		LOW NOISE		40 MHz	750 MHz
BGY785AD	NXP Semiconductors	WIDE BAND MEDIUM POWER			METAL	HYBRID	1			265 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	18.5 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	750 MHz
A3M37TL039T2	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	26	PLASTIC/EPOXY	LDMOS	1				COMPONENT	26	LCC26,.24X.4,40	50 ohm		125 Cel	26.1 dB		NICKEL PALLADIUM GOLD	I/P POWER-MAX (PEAK)=25DBM	e4	3600 MHz	3800 MHz
BGY46B	NXP Semiconductors	NARROW BAND HIGH POWER						19.5 dBm	2		MODULE			50 ohm		90 Cel						430 MHz	470 MHz
BGY685A	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID				240 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	19 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	600 MHz
MW4IC915MBR1	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY		1		5		COMPONENT	26	FLNG,.8''H SPACE	50 ohm	RF/Microwave Amplifiers	85 Cel	29 dB	-10 Cel	Tin/Lead (Sn/Pb)	IT CAN ALSO OPERATE AT 921 TO 960 MHZ	e0	860 MHz	960 MHz
CGY2100HL	NXP Semiconductors	WIDE BAND MEDIUM POWER									COMPONENT			50 ohm		85 Cel		-40 Cel		LOW NOISE			2800 MHz
BGD712C	NXP Semiconductors	NARROW BAND LOW POWER			PLASTIC/EPOXY		1			410 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	19 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	750 MHz
CGY2014TT	NXP Semiconductors	NARROW BAND LOW POWER	SURFACE MOUNT	20	PLASTIC/EPOXY	GAAS	2	10 dBm		3000 mA	COMPONENT	3.5	TSSOP20,.25	50 ohm	RF/Microwave Amplifiers	85 Cel		-20 Cel		IT CAN ALSO OPERATE AT 1710 TO 1910 MHZ		880 MHz	915 MHz
TDA8011T-T	NXP Semiconductors	WIDE BAND LOW POWER									COMPONENT			50 ohm		80 Cel	25 dB	-10 Cel		LOW NOISE
BGY81	NXP Semiconductors	WIDE BAND MEDIUM POWER									MODULE			75 ohm		100 Cel	12.5 dB	-20 Cel		LOW NOISE		40 MHz	450 MHz
MW4IC2020NBR1	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY	MOS	1	20 dBm	3		COMPONENT	26	FLNG,.8''H SPACE	50 ohm	RF/Microwave Amplifiers	85 Cel	27 dB	-10 Cel	Matte Tin (Sn)		e3	1805 MHz	1990 MHz
BGD904L	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID				380 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	20.5 dB	-20 Cel	Gold (Au)	LOW NOISE, HIGH RELIABILITY	e4	40 MHz	900 MHz
BGY115C	NXP Semiconductors	NARROW BAND MEDIUM POWER						7 dBm	3		COMPONENT			50 ohm		100 Cel	28.5 dB	-30 Cel				890 MHz	915 MHz
A2I09VD030GNR1	NXP Semiconductors	NARROW BAND HIGH POWER																	TIN		e3
NE5219N	NXP Semiconductors	WIDE BAND LOW POWER									COMPONENT			50 ohm		70 Cel		0 Cel				0 MHz	700 MHz
BGD904MI	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID		21.25 dBm		435 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	20.5 dB	-20 Cel	Gold (Au)	LOW NOISE, HIGH RELIABILITY	e4	40 MHz	900 MHz
BGD704/09,112	NXP Semiconductors				PLASTIC/EPOXY	HYBRID	1			435 mA		24	SOT-115J		RF/Microwave Amplifiers	100 Cel		-20 Cel
934056627115	NXP Semiconductors	WIDE BAND LOW POWER						10 dBm			COMPONENT			50 ohm			13.9 dB		Pure Tin (Sn)			1000 MHz	2000 MHz
BGA7014	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY		1			85 mA		5	TO-243		RF/Microwave Amplifiers
BGA3021	NXP Semiconductors	WIDE BAND MEDIUM POWER
BGY115P	NXP Semiconductors	NARROW BAND MEDIUM POWER						7 dBm	3		COMPONENT			50 ohm		100 Cel	28.5 dB	-30 Cel				890 MHz	915 MHz
CGY2030M	NXP Semiconductors	NARROW BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS		5 dBm			COMPONENT	3.3	SSOP16,.25	50 ohm	RF/Microwave Amplifiers	85 Cel	27 dB	-30 Cel				1880 MHz	2000 MHz
BGD702D	NXP Semiconductors	WIDE BAND HIGH POWER									MODULE			75 ohm		100 Cel	20 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	750 MHz
CGY2021G	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	48	PLASTIC/EPOXY	GAAS		2 dBm			COMPONENT	4.5	QFP48,.35SQ,20		RF/Microwave Amplifiers	85 Cel	34 dB	-20 Cel		IT CAN ALSO OPERATE AT 1850 TO 1910 MHZ		1710 MHz	1785 MHz
934065676115	NXP Semiconductors	WIDE BAND LOW POWER									COMPONENT			50 ohm		85 Cel	9 dB	-40 Cel	TIN		e3	40 MHz	6000 MHz
MW5IC970GNBR1	NXP Semiconductors	WIDE BAND HIGH POWER							10		COMPONENT			50 ohm		150 Cel	26.5 dB					132 MHz	960 MHz
BGY118A	NXP Semiconductors	NARROW BAND MEDIUM POWER						7 dBm	3		COMPONENT			50 ohm		100 Cel	27.8 dB	-30 Cel				824 MHz	849 MHz
BGY66B	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID		16.25 dBm		135 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	24.5 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		5 MHz	120 MHz
BGY110F	NXP Semiconductors	NARROW BAND MEDIUM POWER						4.77 dBm	2		COMPONENT			50 ohm		90 Cel	32.3 dB					890 MHz	915 MHz
BGY113B	NXP Semiconductors	NARROW BAND HIGH POWER						7 dBm	2		COMPONENT			50 ohm		90 Cel	38.5 dB	-30 Cel				430 MHz	470 MHz
AFIC10275NR5	NXP Semiconductors	NARROW BAND HIGH POWER																	TIN		e3
CA5800CS	NXP Semiconductors	WIDE BAND MEDIUM POWER			PLASTIC/EPOXY	HYBRID		18 dBm	2.6	440 mA	MODULE	28	MOT CASE 714T-01	50 ohm	RF/Microwave Amplifiers	100 Cel		-20 Cel				10 MHz	1000 MHz
BGY118C	NXP Semiconductors		SURFACE MOUNT	4	CERAMIC	HYBRID						4.8	SMSIP4,4GNDFLNG		RF/Microwave Amplifiers	100 Cel		-30 Cel	Tin/Lead (Sn/Pb)		e0
AFSC5G26E39T2	NXP Semiconductors																		NICKEL PALLADIUM GOLD		e4
BGD902L	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID				380 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	19 dB	-20 Cel	Gold (Au)	LOW NOISE, HIGH RELIABILITY	e4	40 MHz	900 MHz
MRFIC1859R2	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	32	PLASTIC/EPOXY	GAAS	2	12 dBm	6		COMPONENT	3.6	TQFP32,.28SQ	50 ohm	RF/Microwave Amplifiers	100 Cel		-35 Cel	Tin/Lead (Sn/Pb)	IT CAN ALSO OPERATE AT 1710 TO 1785 MHZ	e0	880 MHz	915 MHz
BGY61	NXP Semiconductors	WIDE BAND LOW POWER						16.25 dBm			MODULE			75 ohm		100 Cel	12.5 dB	-20 Cel		LOWNOISE		5 MHz	200 MHz
934065982115	NXP Semiconductors	NARROW BAND LOW POWER						0 dBm			COMPONENT			50 ohm		85 Cel	16 dB	-40 Cel	TIN		e3	1559 MHz	1610 MHz
OM336	NXP Semiconductors		THROUGH HOLE MOUNT	10	PLASTIC/EPOXY	HYBRID						24	SIP10,.2		RF/Microwave Amplifiers	70 Cel		-20 Cel	Tin/Lead (Sn/Pb)		e0
BGD702MI	NXP Semiconductors	WIDE BAND HIGH POWER									MODULE			75 ohm		100 Cel	18.5 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	750 MHz
5205/BPA	NXP Semiconductors	WIDE BAND LOW POWER							1.5		COMPONENT			50 ohm		125 Cel	17 dB	-55 Cel				0 MHz	400 MHz
MRFIC1808	NXP Semiconductors	NARROW BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS		3 dBm		5.5 mA	COMPONENT	3	SOP8,.25		RF/Microwave Amplifiers	85 Cel		-30 Cel	Tin/Lead (Sn/Pb)		e0	1700 MHz	2100 MHz

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.