140 A Insulated Gate Bipolar Transistors (IGBT) 58

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

IRGP4066D-EPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

454 W

140 A

PLASTIC/EPOXY

POWER CONTROL

90 ns

THROUGH-HOLE

RECTANGULAR

1

80 ns

310 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

6.5 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AD

NOT SPECIFIED

NOT SPECIFIED

120 ns

IRGP4266DPBF

Infineon Technologies

N-CHANNEL

NO

455 W

140 A

90 ns

80 ns

Insulated Gate BIP Transistors

175 Cel

650 V

20 V

7.7 V

NOT SPECIFIED

NOT SPECIFIED

APT100GT120JU2

Microchip Technology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

480 W

140 A

UNSPECIFIED

POWER CONTROL

2.1 V

UNSPECIFIED

RECTANGULAR

1

610 ns

4

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X4

ISOLATED

Not Qualified

AVALANCHE RATED, LOW CONDUCTION LOSS

NOT SPECIFIED

NOT SPECIFIED

335 ns

FS100R12KE3BOSA1

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

140 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

6

610 ns

35

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X35

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

340 ns

TDB6HK180N16RRBOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

515 W

140 A

UNSPECIFIED

POWER CONTROL

2.2 V

UNSPECIFIED

RECTANGULAR

1

410 ns

29

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X29

ISOLATED

UL RECOGNIZED

NOT SPECIFIED

NOT SPECIFIED

190 ns

AUIRGP4066D1-E

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

454 W

140 A

PLASTIC/EPOXY

POWER CONTROL

100 ns

THROUGH-HOLE

RECTANGULAR

1

80 ns

320 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

6.5 V

MATTE TIN OVER NICKEL

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AD

e3

30

250

115 ns

APT100GT120JU3

Microchip Technology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

480 W

140 A

UNSPECIFIED

POWER CONTROL

2.1 V

UNSPECIFIED

RECTANGULAR

1

610 ns

4

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X4

ISOLATED

Not Qualified

AVALANCHE RATED, LOW CONDUCTION LOSS

NOT SPECIFIED

NOT SPECIFIED

335 ns

IRG7PH50UPBF

Infineon Technologies

N-CHANNEL

SINGLE

NO

556 W

140 A

PLASTIC/EPOXY

POWER CONTROL

60 ns

THROUGH-HOLE

RECTANGULAR

1

65 ns

710 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

1200 V

30 V

6 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AC

NOT SPECIFIED

NOT SPECIFIED

75 ns

FS100R12KT3BOSA1

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

140 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

6

610 ns

35

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X35

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

340 ns

IXYH60N90C3

Littelfuse

N-CHANNEL

SINGLE

NO

750 W

140 A

PLASTIC/EPOXY

POWER CONTROL

2.9 V

THROUGH-HOLE

RECTANGULAR

1

268 ns

3

FLANGE MOUNT

175 Cel

SILICON

900 V

-55 Cel

20 V

5.5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AD

e3

10

260

104 ns

VUB120-16NO2

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR

NO

140 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

1

16

FLANGE MOUNT

150 Cel

SILICON

1200 V

GOLD OVER NICKEL

UPPER

R-XUFM-X16

ISOLATED

Not Qualified

e4

UL RECOGNIZED

IRGP4066DPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

454 W

140 A

PLASTIC/EPOXY

POWER CONTROL

90 ns

THROUGH-HOLE

RECTANGULAR

1

80 ns

310 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

6.5 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AC

NOT SPECIFIED

NOT SPECIFIED

120 ns

NXH160T120L2Q1SG

Onsemi

N-CHANNEL

BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE, SINGLE PHASE DIODE BRIDGE AND THERMISTOR

NO

280 W

140 A

UNSPECIFIED

POWER CONTROL

2.5 V

UNSPECIFIED

RECTANGULAR

4

30

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.9 V

UPPER

R-XUFM-X30

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

NXH160T120L2Q1PG

Onsemi

N-CHANNEL

BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE, SINGLE PHASE DIODE BRIDGE AND THERMISTOR

NO

280 W

140 A

UNSPECIFIED

POWER CONTROL

2.5 V

UNSPECIFIED

RECTANGULAR

4

30

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.9 V

UPPER

R-XUFM-X30

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

NGTB50N65S1WG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

300 W

140 A

PLASTIC/EPOXY

POWER CONTROL

2.45 V

THROUGH-HOLE

RECTANGULAR

1

228 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

6.5 V

Tin (Sn)

SINGLE

R-PSFM-T3

TO-247AD

e3

118 ns

DDB6U180N16RR

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND THREE PHASE DIODE BRIDGE

NO

515 W

140 A

UNSPECIFIED

POWER CONTROL

2.2 V

UNSPECIFIED

RECTANGULAR

1

620 ns

26

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X26

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

210 ns

UL APPROVED

IGW75N60H3FKSA1

Infineon Technologies

N-CHANNEL

SINGLE

NO

140 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

SILICON

600 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

e3

DDB6U180N16RR_B11

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND THREE PHASE DIODE BRIDGE

NO

515 W

140 A

UNSPECIFIED

POWER CONTROL

2.2 V

UNSPECIFIED

RECTANGULAR

1

620 ns

26

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X26

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

210 ns

UL APPROVED

IGW75N60H3

Infineon Technologies

N-CHANNEL

SINGLE

NO

140 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

SILICON

600 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

e3

DDB6U180N16RRB11BPSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND THREE PHASE DIODE BRIDGE

NO

140 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

1

620 ns

26

FLANGE MOUNT

SILICON

1200 V

-40 Cel

UPPER

R-XUFM-X26

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

210 ns

UL RECOGNIZED

SP000913772

Infineon Technologies

N-Channel

714 W

140 A

2.3 V

333 ns

175 Cel

SILICON

600 V

-40 Cel

20 V

5.7 V

72 ns

IRGP4690DPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

454 W

140 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

310 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

-55 Cel

20 V

6.5 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AC

NOT SPECIFIED

NOT SPECIFIED

120 ns

FS100R12KE3

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

480 W

140 A

UNSPECIFIED

2.15 V

UNSPECIFIED

RECTANGULAR

6

610 ns

35

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X35

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

340 ns

FS100R12KE3B3NOSA1

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

NO

140 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

6

610 ns

34

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X34

ISOLATED

340 ns

IRG7PH50U-EP

Infineon Technologies

N-CHANNEL

SINGLE

NO

556 W

140 A

PLASTIC/EPOXY

POWER CONTROL

60 ns

THROUGH-HOLE

RECTANGULAR

1

65 ns

710 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

1200 V

30 V

6 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AD

NOT SPECIFIED

NOT SPECIFIED

75 ns

AUIRGP4066D1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

454 W

140 A

PLASTIC/EPOXY

POWER CONTROL

100 ns

THROUGH-HOLE

RECTANGULAR

1

80 ns

320 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

6.5 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AC

NOT SPECIFIED

NOT SPECIFIED

115 ns

IRGP4066-EPBF

Infineon Technologies

N-CHANNEL

SINGLE

NO

454 W

140 A

PLASTIC/EPOXY

POWER CONTROL

90 ns

THROUGH-HOLE

RECTANGULAR

1

80 ns

310 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

6.5 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AD

NOT SPECIFIED

NOT SPECIFIED

120 ns

IRGP6690D-EPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

483 W

140 A

PLASTIC/EPOXY

POWER CONTROL

1.95 V

THROUGH-HOLE

RECTANGULAR

1

305 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

-40 Cel

20 V

6.5 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AD

NOT SPECIFIED

NOT SPECIFIED

159 ns

IGW100N60H3

Infineon Technologies

N-CHANNEL

SINGLE

NO

714 W

140 A

PLASTIC/EPOXY

POWER CONTROL

2.3 V

THROUGH-HOLE

RECTANGULAR

1

333 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

-40 Cel

20 V

5.7 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

e3

72 ns

IRGP4790PBF

Infineon Technologies

N-Channel

SINGLE

NO

455 W

140 A

PLASTIC/EPOXY

POWER CONTROL

90 ns

2 V

THROUGH-HOLE

RECTANGULAR

1

80 ns

305 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

160 ns

-40 Cel

20 V

305 ns

7.4 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AC

NOT SPECIFIED

NOT SPECIFIED

160 ns

IRGP4066PBF

Infineon Technologies

N-CHANNEL

SINGLE

NO

454 W

140 A

PLASTIC/EPOXY

POWER CONTROL

90 ns

THROUGH-HOLE

RECTANGULAR

1

80 ns

310 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

6.5 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AC

NOT SPECIFIED

NOT SPECIFIED

120 ns

TDB6HK180N16RRP_B11

Infineon Technologies

N-CHANNEL

COMPLEX

NO

515 W

140 A

UNSPECIFIED

POWER CONTROL

2.2 V

UNSPECIFIED

RECTANGULAR

1

410 ns

29

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X29

ISOLATED

UL RECOGNIZED

190 ns

IRGP4266PBF

Infineon Technologies

N-CHANNEL

NO

450 W

140 A

105 ns

55 ns

Insulated Gate BIP Transistors

175 Cel

650 V

20 V

7.7 V

NOT SPECIFIED

NOT SPECIFIED

IRGP4790-EPBF

Infineon Technologies

N-Channel

SINGLE

NO

455 W

140 A

PLASTIC/EPOXY

POWER CONTROL

90 ns

2 V

THROUGH-HOLE

RECTANGULAR

1

80 ns

305 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

160 ns

-40 Cel

20 V

305 ns

7.4 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AD

NOT SPECIFIED

NOT SPECIFIED

160 ns

TDB6HK180N16RR

Infineon Technologies

N-CHANNEL

COMPLEX

NO

140 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

1

620 ns

29

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X29

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

210 ns

UL RECOGNIZED

IRGP6690DPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

483 W

140 A

PLASTIC/EPOXY

POWER CONTROL

1.95 V

THROUGH-HOLE

RECTANGULAR

1

305 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

-40 Cel

20 V

6.5 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AC

NOT SPECIFIED

NOT SPECIFIED

159 ns

IRGP4690D-EPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

454 W

140 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

310 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

-55 Cel

20 V

6.5 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AD

NOT SPECIFIED

NOT SPECIFIED

120 ns

IRGP4790DPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

455 W

140 A

PLASTIC/EPOXY

POWER CONTROL

90 ns

2 V

THROUGH-HOLE

RECTANGULAR

1

80 ns

260 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

160 ns

-40 Cel

20 V

305 ns

7.4 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AC

NOT SPECIFIED

NOT SPECIFIED

120 ns

FF100R12YT3ENG

Infineon Technologies

N-Channel

445 W

140 A

2.15 V

680 ns

125 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

ISOLATED

187 ns

IRGP4266D-EPBF

Infineon Technologies

N-CHANNEL

NO

455 W

140 A

90 ns

80 ns

Insulated Gate BIP Transistors

175 Cel

650 V

20 V

7.7 V

NOT SPECIFIED

NOT SPECIFIED

FF100R12YT3BOMA1

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

140 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

2

680 ns

24

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X24

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

187 ns

IRGP4790D-EPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

455 W

140 A

PLASTIC/EPOXY

POWER CONTROL

90 ns

2 V

THROUGH-HOLE

RECTANGULAR

1

80 ns

260 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

160 ns

-40 Cel

20 V

305 ns

7.4 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AD

NOT SPECIFIED

NOT SPECIFIED

120 ns

FF100R12YT3

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

445 W

140 A

UNSPECIFIED

2.15 V

UNSPECIFIED

RECTANGULAR

2

680 ns

24

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X24

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

187 ns

FS100R12KE3_B3

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

NO

480 W

140 A

UNSPECIFIED

2.15 V

UNSPECIFIED

RECTANGULAR

6

610 ns

34

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

TIN LEAD

UPPER

R-XUFM-X34

ISOLATED

Not Qualified

e0

340 ns

IGW100N60H3FKSA1

Infineon Technologies

N-CHANNEL

SINGLE

NO

714 W

140 A

PLASTIC/EPOXY

POWER CONTROL

2.3 V

THROUGH-HOLE

RECTANGULAR

1

333 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

-40 Cel

20 V

5.7 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

e3

72 ns

FF100R12YT3_B60

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

445 W

140 A

UNSPECIFIED

POWER CONTROL

2.15 V

UNSPECIFIED

RECTANGULAR

2

680 ns

24

FLANGE MOUNT

125 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X24

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

187 ns

UL APPROVED

FS100R12KT3

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

480 W

140 A

UNSPECIFIED

2.15 V

UNSPECIFIED

RECTANGULAR

6

610 ns

35

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X35

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

340 ns

IRGP4266-EPBF

Infineon Technologies

N-CHANNEL

NO

450 W

140 A

105 ns

55 ns

Insulated Gate BIP Transistors

175 Cel

650 V

20 V

7.7 V

NOT SPECIFIED

NOT SPECIFIED

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.