41 A Insulated Gate Bipolar Transistors (IGBT) 53

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

SKW30N60FKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

41 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

391 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-247AC

e3

78 ns

FGD3040G2-F085C

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

150 W

41 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

7000 ns

1.25 V

GULL WING

RECTANGULAR

1

15000 ns

6800 ns

2

SMALL OUTLINE

175 Cel

SILICON

450 V

11000 ns

-55 Cel

10 V

25000 ns

2.2 V

Matte Tin (Sn) - annealed

SINGLE

R-PSSO-G2

1

TO-252AA

e3

30

260

2800 ns

AEC-Q101

FGD3040G2-F085V

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

150 W

41 A

PLASTIC/EPOXY

POWER CONTROL

7000 ns

1.85 V

GULL WING

RECTANGULAR

1

15000 ns

6800 ns

2

SMALL OUTLINE

175 Cel

SILICON

390 V

11000 ns

-55 Cel

10 V

30000 ns

2.2 V

Matte Tin (Sn) - annealed

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-252

e3

30

260

2800 ns

AEC-Q101

IRG4PH40UD2-EP

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

160 W

41 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

300 ns

600 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

6 V

MATTE TIN OVER NICKEL

SINGLE

R-PSFM-T3

Not Qualified

TO-247AD

e3

46 ns

IRG4PH40UDPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

65 W

41 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

360 ns

750 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

6 V

MATTE TIN OVER NICKEL

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

ULTRA FAST SOFT RECOVERY

TO-247AC

e3

74 ns

IRG4PH40UPBF

Infineon Technologies

N-CHANNEL

SINGLE

NO

160 W

41 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

190 ns

690 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

3 V

MATTE TIN OVER NICKEL

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-247AC

e3

49 ns

SKIIP13AC126V1

Semikron International

N-CHANNEL

COMPLEX

NO

41 A

UNSPECIFIED

POWER CONTROL

2.1 V

UNSPECIFIED

RECTANGULAR

6

540 ns

24

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

TIN/SILVER

UPPER

R-XUFM-X24

ISOLATED

Not Qualified

e3/e4

NOT SPECIFIED

NOT SPECIFIED

130 ns

IEC-60747-1; UL RECOGNIZED

SKIIP23AC126V1

Semikron International

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

41 A

UNSPECIFIED

POWER CONTROL

2.1 V

UNSPECIFIED

RECTANGULAR

6

565 ns

42

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X42

ISOLATED

Not Qualified

HIGH RELIABILITY

NOT SPECIFIED

NOT SPECIFIED

110 ns

UL RECOGNIZED

FGB3040G2-F085

Onsemi

N-CHANNEL

YES

150 W

41 A

7000 ns

15000 ns

Insulated Gate BIP Transistors

175 Cel

390 V

12 V

2.2 V

Matte Tin (Sn) - annealed

1

e3

30

260

FGB3040G2_F085

Fairchild Semiconductor

N-CHANNEL

YES

150 W

41 A

7000 ns

15000 ns

Insulated Gate BIP Transistors

175 Cel

390 V

12 V

2.2 V

1

260

SGW30N60FKSA1

Infineon Technologies

N-CHANNEL

SINGLE

NO

41 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

391 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-247AC

e3

78 ns

FGI3040G2-F085

Onsemi

N-CHANNEL

NO

150 W

41 A

7000 ns

15000 ns

Insulated Gate BIP Transistors

175 Cel

390 V

12 V

2.2 V

NOT SPECIFIED

NOT SPECIFIED

NXH80B120L2Q0SNG

Onsemi

N-CHANNEL

COMMON COLLECTOR, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

YES

103 W

41 A

UNSPECIFIED

POWER CONTROL

2.5 V

UNSPECIFIED

RECTANGULAR

2

290 ns

22

FLANGE MOUNT

125 Cel

SILICON

1200 V

-40 Cel

20 V

6.4 V

MATTE TIN

UPPER

R-XUFM-X22

ISOLATED

RC-IGBT

e3

47 ns

NXH80B120H2Q0SGQ0BOOST

Onsemi

N-CHANNEL

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

YES

103 W

41 A

UNSPECIFIED

POWER CONTROL

2.5 V

UNSPECIFIED

RECTANGULAR

2

299 ns

22

FLANGE MOUNT

125 Cel

SILICON

1200 V

-40 Cel

20 V

6.4 V

UPPER

R-XUFM-X22

ISOLATED

47 ns

NXH80B120L2Q0SG

Onsemi

N-CHANNEL

COMMON COLLECTOR, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

YES

103 W

41 A

UNSPECIFIED

POWER CONTROL

2.5 V

UNSPECIFIED

RECTANGULAR

2

290 ns

22

FLANGE MOUNT

125 Cel

SILICON

1200 V

-40 Cel

20 V

6.4 V

UPPER

R-XUFM-X22

ISOLATED

RC-IGBT

47 ns

FGP3040G2-F085

Onsemi

N-CHANNEL

NO

150 W

41 A

7000 ns

15000 ns

Insulated Gate BIP Transistors

175 Cel

390 V

12 V

2.2 V

Matte Tin (Sn) - annealed

e3

NOT SPECIFIED

NOT SPECIFIED

NXH80B120H2Q0SG

Onsemi

N-CHANNEL

COMMON COLLECTOR, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

103 W

41 A

UNSPECIFIED

POWER CONTROL

2.5 V

UNSPECIFIED

RECTANGULAR

2

22

FLANGE MOUNT

125 Cel

SILICON

1200 V

-40 Cel

20 V

6.4 V

Matte Tin (Sn) - annealed

UPPER

R-XUFM-X22

ISOLATED

e3

NXH80B120H2Q0SNGQ0BOOST

Onsemi

N-CHANNEL

COMMON COLLECTOR, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

103 W

41 A

METAL

POWER CONTROL

2.5 V

UNSPECIFIED

RECTANGULAR

2

299 ns

22

FLANGE MOUNT

125 Cel

SILICON

1200 V

-40 Cel

20 V

6.4 V

UPPER

R-MUFM-X22

ISOLATED

47 ns

PCGA3040G2F

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

150 W

41 A

UNSPECIFIED

AUTOMOTIVE IGNITION

1.25 V

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

175 Cel

SILICON

400 V

-55 Cel

10 V

2.2 V

UPPER

R-XUUC-N2

AEC-Q101

FGD3325G2-F085

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR

YES

150 W

41 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

7000 ns

1.25 V

GULL WING

RECTANGULAR

1

15000 ns

7300 ns

2

SMALL OUTLINE

175 Cel

SILICON

240 V

11000 ns

-55 Cel

10 V

30000 ns

2.2 V

Matte Tin (Sn) - annealed

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-252AA

e3

30

260

2000 ns

AEC-Q101

FGD3325G2-F085V

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR

YES

150 W

41 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

7000 ns

1.25 V

GULL WING

RECTANGULAR

1

15000 ns

7300 ns

2

SMALL OUTLINE

175 Cel

SILICON

240 V

11000 ns

-55 Cel

10 V

30000 ns

2.2 V

MATTE TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-252AA

e3

30

260

2000 ns

AEC-Q101

IRGAC50U

Infineon Technologies

N-CHANNEL

SINGLE

NO

41 A

METAL

PIN/PEG

ROUND

1

2

FLANGE MOUNT

SILICON

600 V

BOTTOM

O-MBFM-P2

COLLECTOR

Not Qualified

ULTRA FAST

TO-204AE

NOT SPECIFIED

NOT SPECIFIED

SGP30N60HSXK

Infineon Technologies

N-CHANNEL

SINGLE

NO

41 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

301 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-220AB

39 ns

SKW30N60HSFKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

41 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

301 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AC

e3

39 ns

SGB30N60

Infineon Technologies

N-CHANNEL

SINGLE

YES

250 W

41 A

PLASTIC/EPOXY

POWER CONTROL

58 ns

GULL WING

RECTANGULAR

1

70 ns

391 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-263AB

245

78 ns

SKW30N60HSFK

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

41 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

301 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AC

39 ns

SGP30N60

Infineon Technologies

N-CHANNEL

SINGLE

NO

250 W

41 A

PLASTIC/EPOXY

POWER CONTROL

58 ns

THROUGH-HOLE

RECTANGULAR

1

70 ns

391 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

78 ns

SKW30N60HS

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

250 W

41 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

301 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AC

NOT SPECIFIED

NOT SPECIFIED

39 ns

SIGC25T60SNC

Infineon Technologies

N-CHANNEL

SINGLE

YES

41 A

UNSPECIFIED

POWER CONTROL

40 ns

NO LEAD

RECTANGULAR

1

80 ns

391 ns

3

UNCASED CHIP

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

UPPER

R-XUUC-N3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

78 ns

SGP30N60XK

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

41 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

391 ns

3

FLANGE MOUNT

SILICON

600 V

-55 Cel

SINGLE

R-PSFM-T3

COLLECTOR

LOW CONDUCTION LOSS

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

78 ns

SGP30N60HKSA1

Infineon Technologies

N-CHANNEL

SINGLE

NO

41 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

391 ns

3

FLANGE MOUNT

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

LOW CONDUCTION LOSS

TO-220AB

78 ns

SGB30N60ATMA1

Infineon Technologies

N-CHANNEL

SINGLE

YES

41 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

391 ns

2

SMALL OUTLINE

150 Cel

SILICON

600 V

TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-263AB

e3

78 ns

SGP30N60HSXKSA1

Infineon Technologies

N-CHANNEL

SINGLE

NO

41 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

301 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

39 ns

SGW30N60HSXK

Infineon Technologies

N-CHANNEL

SINGLE

NO

41 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

301 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AC

39 ns

SGW30N60XK

Infineon Technologies

N-CHANNEL

SINGLE

NO

41 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

391 ns

3

FLANGE MOUNT

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

LOW CONDUCTION LOSS

TO-247AC

NOT SPECIFIED

NOT SPECIFIED

78 ns

SGW30N60HSFKSA1

Infineon Technologies

N-CHANNEL

SINGLE

NO

41 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

301 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AC

NOT SPECIFIED

NOT SPECIFIED

39 ns

SGB30N60XT

Infineon Technologies

N-CHANNEL

SINGLE

YES

41 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

391 ns

2

SMALL OUTLINE

150 Cel

SILICON

600 V

SINGLE

R-PSSO-G2

COLLECTOR

LOW CONDUCTION LOSS

TO-263AB

78 ns

SGW30N60HS

Infineon Technologies

N-CHANNEL

SINGLE

NO

250 W

41 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

301 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

SINGLE

R-PSFM-T3

NOT APPLICABLE

COLLECTOR

Not Qualified

TO-247AC

NOT SPECIFIED

NOT SPECIFIED

39 ns

SKW30N60

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

250 W

41 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

70 ns

391 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-247AC

e3

78 ns

SGW30N60

Infineon Technologies

N-CHANNEL

SINGLE

NO

250 W

41 A

PLASTIC/EPOXY

POWER CONTROL

58 ns

THROUGH-HOLE

RECTANGULAR

1

70 ns

391 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-247AC

NOT SPECIFIED

NOT SPECIFIED

78 ns

SIGC25T60SNCX1SA2

Infineon Technologies

N-CHANNEL

SINGLE

YES

41 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

391 ns

3

UNCASED CHIP

150 Cel

SILICON

600 V

UPPER

R-XUUC-N3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

78 ns

SIGC25T60SN

Infineon Technologies

N-CHANNEL

SINGLE

YES

41 A

UNSPECIFIED

MOTOR CONTROL

58 ns

NO LEAD

RECTANGULAR

1

70 ns

349 ns

3

UNCASED CHIP

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

UPPER

R-XUUC-N3

Not Qualified

79 ns

SGB30N60E3045A

Infineon Technologies

N-CHANNEL

SINGLE

YES

41 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

391 ns

2

SMALL OUTLINE

150 Cel

SILICON

600 V

SINGLE

R-PSSO-G2

COLLECTOR

LOW CONDUCTION LOSS

TO-263AB

78 ns

SP000054886

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

166 W

41 A

PLASTIC/EPOXY

POWER CONTROL

2.05 V

THROUGH-HOLE

RECTANGULAR

1

241 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

-40 Cel

20 V

5.7 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

32 ns

SGP30N60HS

Infineon Technologies

N-CHANNEL

SINGLE

NO

250 W

41 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

301 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

39 ns

IRG4PH40U-E

Infineon Technologies

N-CHANNEL

SINGLE

NO

41 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

690 ns

3

FLANGE MOUNT

SILICON

1200 V

MATTE TIN OVER NICKEL

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-247AD

e3

49 ns

IRG4PH40U

Infineon Technologies

N-CHANNEL

SINGLE

NO

41 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

690 ns

3

FLANGE MOUNT

150 Cel

SILICON

1200 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-247AC

NOT SPECIFIED

NOT SPECIFIED

49 ns

IRG4PH40UD

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

41 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

750 ns

3

FLANGE MOUNT

150 Cel

SILICON

1200 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

ULTRA FAST SOFT RECOVERY

TO-247AC

NOT SPECIFIED

NOT SPECIFIED

74 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.