Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Emitter Current | Maximum Rise Time (tr) | Maximum VCEsat | Terminal Form | Package Shape | Operating Mode | No. of Elements | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | Nominal Turn Off Time (toff) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Maximum Operating Temperature | Transistor Element Material | Maximum Collector-Emitter Voltage | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Gate-Emitter Voltage | Maximum Turn Off Time (toff) | Maximum Gate-Emitter Threshold Voltage | Terminal Finish | Minimum Intrinsic Stand-off Ratio | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Maximum Intrinsic Stand-off Ratio | Minimum Static Inter-Base Resistance | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Nominal Turn On Time (ton) | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
41 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
391 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
LOW CONDUCTION LOSS |
TO-247AC |
e3 |
78 ns |
||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
150 W |
41 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
7000 ns |
1.25 V |
GULL WING |
RECTANGULAR |
1 |
15000 ns |
6800 ns |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
450 V |
11000 ns |
-55 Cel |
10 V |
25000 ns |
2.2 V |
Matte Tin (Sn) - annealed |
SINGLE |
R-PSSO-G2 |
1 |
TO-252AA |
e3 |
30 |
260 |
2800 ns |
AEC-Q101 |
||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
150 W |
41 A |
PLASTIC/EPOXY |
POWER CONTROL |
7000 ns |
1.85 V |
GULL WING |
RECTANGULAR |
1 |
15000 ns |
6800 ns |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
390 V |
11000 ns |
-55 Cel |
10 V |
30000 ns |
2.2 V |
Matte Tin (Sn) - annealed |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
TO-252 |
e3 |
30 |
260 |
2800 ns |
AEC-Q101 |
|||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
160 W |
41 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
300 ns |
600 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
6 V |
MATTE TIN OVER NICKEL |
SINGLE |
R-PSFM-T3 |
Not Qualified |
TO-247AD |
e3 |
46 ns |
|||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
65 W |
41 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
360 ns |
750 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
6 V |
MATTE TIN OVER NICKEL |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
ULTRA FAST SOFT RECOVERY |
TO-247AC |
e3 |
74 ns |
|||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
NO |
160 W |
41 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
190 ns |
690 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
3 V |
MATTE TIN OVER NICKEL |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
LOW CONDUCTION LOSS |
TO-247AC |
e3 |
49 ns |
|||||||||||||||||||
|
Semikron International |
N-CHANNEL |
COMPLEX |
NO |
41 A |
UNSPECIFIED |
POWER CONTROL |
2.1 V |
UNSPECIFIED |
RECTANGULAR |
6 |
540 ns |
24 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
TIN/SILVER |
UPPER |
R-XUFM-X24 |
ISOLATED |
Not Qualified |
e3/e4 |
NOT SPECIFIED |
NOT SPECIFIED |
130 ns |
IEC-60747-1; UL RECOGNIZED |
||||||||||||||||||||
|
Semikron International |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
NO |
41 A |
UNSPECIFIED |
POWER CONTROL |
2.1 V |
UNSPECIFIED |
RECTANGULAR |
6 |
565 ns |
42 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
UPPER |
R-XUFM-X42 |
ISOLATED |
Not Qualified |
HIGH RELIABILITY |
NOT SPECIFIED |
NOT SPECIFIED |
110 ns |
UL RECOGNIZED |
|||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
YES |
150 W |
41 A |
7000 ns |
15000 ns |
Insulated Gate BIP Transistors |
175 Cel |
390 V |
12 V |
2.2 V |
Matte Tin (Sn) - annealed |
1 |
e3 |
30 |
260 |
||||||||||||||||||||||||||||||||
|
Fairchild Semiconductor |
N-CHANNEL |
YES |
150 W |
41 A |
7000 ns |
15000 ns |
Insulated Gate BIP Transistors |
175 Cel |
390 V |
12 V |
2.2 V |
1 |
260 |
|||||||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
NO |
41 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
391 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
LOW CONDUCTION LOSS |
TO-247AC |
e3 |
78 ns |
||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
NO |
150 W |
41 A |
7000 ns |
15000 ns |
Insulated Gate BIP Transistors |
175 Cel |
390 V |
12 V |
2.2 V |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
COMMON COLLECTOR, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
YES |
103 W |
41 A |
UNSPECIFIED |
POWER CONTROL |
2.5 V |
UNSPECIFIED |
RECTANGULAR |
2 |
290 ns |
22 |
FLANGE MOUNT |
125 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.4 V |
MATTE TIN |
UPPER |
R-XUFM-X22 |
ISOLATED |
RC-IGBT |
e3 |
47 ns |
|||||||||||||||||||||
Onsemi |
N-CHANNEL |
COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
YES |
103 W |
41 A |
UNSPECIFIED |
POWER CONTROL |
2.5 V |
UNSPECIFIED |
RECTANGULAR |
2 |
299 ns |
22 |
FLANGE MOUNT |
125 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.4 V |
UPPER |
R-XUFM-X22 |
ISOLATED |
47 ns |
|||||||||||||||||||||||||
Onsemi |
N-CHANNEL |
COMMON COLLECTOR, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
YES |
103 W |
41 A |
UNSPECIFIED |
POWER CONTROL |
2.5 V |
UNSPECIFIED |
RECTANGULAR |
2 |
290 ns |
22 |
FLANGE MOUNT |
125 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.4 V |
UPPER |
R-XUFM-X22 |
ISOLATED |
RC-IGBT |
47 ns |
||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
NO |
150 W |
41 A |
7000 ns |
15000 ns |
Insulated Gate BIP Transistors |
175 Cel |
390 V |
12 V |
2.2 V |
Matte Tin (Sn) - annealed |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
COMMON COLLECTOR, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
NO |
103 W |
41 A |
UNSPECIFIED |
POWER CONTROL |
2.5 V |
UNSPECIFIED |
RECTANGULAR |
2 |
22 |
FLANGE MOUNT |
125 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.4 V |
Matte Tin (Sn) - annealed |
UPPER |
R-XUFM-X22 |
ISOLATED |
e3 |
||||||||||||||||||||||||
Onsemi |
N-CHANNEL |
COMMON COLLECTOR, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
NO |
103 W |
41 A |
METAL |
POWER CONTROL |
2.5 V |
UNSPECIFIED |
RECTANGULAR |
2 |
299 ns |
22 |
FLANGE MOUNT |
125 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.4 V |
UPPER |
R-MUFM-X22 |
ISOLATED |
47 ns |
|||||||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
150 W |
41 A |
UNSPECIFIED |
AUTOMOTIVE IGNITION |
1.25 V |
NO LEAD |
RECTANGULAR |
1 |
2 |
UNCASED CHIP |
175 Cel |
SILICON |
400 V |
-55 Cel |
10 V |
2.2 V |
UPPER |
R-XUUC-N2 |
AEC-Q101 |
|||||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR |
YES |
150 W |
41 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
7000 ns |
1.25 V |
GULL WING |
RECTANGULAR |
1 |
15000 ns |
7300 ns |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
240 V |
11000 ns |
-55 Cel |
10 V |
30000 ns |
2.2 V |
Matte Tin (Sn) - annealed |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
TO-252AA |
e3 |
30 |
260 |
2000 ns |
AEC-Q101 |
|||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR |
YES |
150 W |
41 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
7000 ns |
1.25 V |
GULL WING |
RECTANGULAR |
1 |
15000 ns |
7300 ns |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
240 V |
11000 ns |
-55 Cel |
10 V |
30000 ns |
2.2 V |
MATTE TIN |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
TO-252AA |
e3 |
30 |
260 |
2000 ns |
AEC-Q101 |
|||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE |
NO |
41 A |
METAL |
PIN/PEG |
ROUND |
1 |
2 |
FLANGE MOUNT |
SILICON |
600 V |
BOTTOM |
O-MBFM-P2 |
COLLECTOR |
Not Qualified |
ULTRA FAST |
TO-204AE |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE |
NO |
41 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
301 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-220AB |
39 ns |
|||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
41 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
301 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
TO-247AC |
e3 |
39 ns |
|||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
YES |
250 W |
41 A |
PLASTIC/EPOXY |
POWER CONTROL |
58 ns |
GULL WING |
RECTANGULAR |
1 |
70 ns |
391 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
5 V |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
Not Qualified |
LOW CONDUCTION LOSS |
TO-263AB |
245 |
78 ns |
||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
41 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
301 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-247AC |
39 ns |
|||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
NO |
250 W |
41 A |
PLASTIC/EPOXY |
POWER CONTROL |
58 ns |
THROUGH-HOLE |
RECTANGULAR |
1 |
70 ns |
391 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
5 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
LOW CONDUCTION LOSS |
TO-220AB |
NOT SPECIFIED |
NOT SPECIFIED |
78 ns |
||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
250 W |
41 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
301 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
5 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
TO-247AC |
NOT SPECIFIED |
NOT SPECIFIED |
39 ns |
|||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
YES |
41 A |
UNSPECIFIED |
POWER CONTROL |
40 ns |
NO LEAD |
RECTANGULAR |
1 |
80 ns |
391 ns |
3 |
UNCASED CHIP |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
5 V |
UPPER |
R-XUUC-N3 |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
78 ns |
||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
41 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
391 ns |
3 |
FLANGE MOUNT |
SILICON |
600 V |
-55 Cel |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
LOW CONDUCTION LOSS |
TO-220AB |
NOT SPECIFIED |
NOT SPECIFIED |
78 ns |
|||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE |
NO |
41 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
391 ns |
3 |
FLANGE MOUNT |
SILICON |
600 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
LOW CONDUCTION LOSS |
TO-220AB |
78 ns |
|||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
YES |
41 A |
PLASTIC/EPOXY |
POWER CONTROL |
GULL WING |
RECTANGULAR |
1 |
391 ns |
2 |
SMALL OUTLINE |
150 Cel |
SILICON |
600 V |
TIN |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
Not Qualified |
LOW CONDUCTION LOSS |
TO-263AB |
e3 |
78 ns |
|||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
NO |
41 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
301 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
TO-220AB |
NOT SPECIFIED |
NOT SPECIFIED |
39 ns |
|||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE |
NO |
41 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
301 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-247AC |
39 ns |
|||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
NO |
41 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
391 ns |
3 |
FLANGE MOUNT |
SILICON |
600 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
LOW CONDUCTION LOSS |
TO-247AC |
NOT SPECIFIED |
NOT SPECIFIED |
78 ns |
||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
NO |
41 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
301 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
TO-247AC |
NOT SPECIFIED |
NOT SPECIFIED |
39 ns |
|||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE |
YES |
41 A |
PLASTIC/EPOXY |
POWER CONTROL |
GULL WING |
RECTANGULAR |
1 |
391 ns |
2 |
SMALL OUTLINE |
150 Cel |
SILICON |
600 V |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
LOW CONDUCTION LOSS |
TO-263AB |
78 ns |
||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
NO |
250 W |
41 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
301 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
5 V |
SINGLE |
R-PSFM-T3 |
NOT APPLICABLE |
COLLECTOR |
Not Qualified |
TO-247AC |
NOT SPECIFIED |
NOT SPECIFIED |
39 ns |
||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
250 W |
41 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
70 ns |
391 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
5 V |
TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
LOW CONDUCTION LOSS |
TO-247AC |
e3 |
78 ns |
|||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
NO |
250 W |
41 A |
PLASTIC/EPOXY |
POWER CONTROL |
58 ns |
THROUGH-HOLE |
RECTANGULAR |
1 |
70 ns |
391 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
5 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
LOW CONDUCTION LOSS |
TO-247AC |
NOT SPECIFIED |
NOT SPECIFIED |
78 ns |
||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
YES |
41 A |
UNSPECIFIED |
POWER CONTROL |
NO LEAD |
RECTANGULAR |
1 |
391 ns |
3 |
UNCASED CHIP |
150 Cel |
SILICON |
600 V |
UPPER |
R-XUUC-N3 |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
78 ns |
|||||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE |
YES |
41 A |
UNSPECIFIED |
MOTOR CONTROL |
58 ns |
NO LEAD |
RECTANGULAR |
1 |
70 ns |
349 ns |
3 |
UNCASED CHIP |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
5 V |
UPPER |
R-XUUC-N3 |
Not Qualified |
79 ns |
|||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE |
YES |
41 A |
PLASTIC/EPOXY |
POWER CONTROL |
GULL WING |
RECTANGULAR |
1 |
391 ns |
2 |
SMALL OUTLINE |
150 Cel |
SILICON |
600 V |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
LOW CONDUCTION LOSS |
TO-263AB |
78 ns |
||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
166 W |
41 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.05 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
241 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
600 V |
-40 Cel |
20 V |
5.7 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-247 |
32 ns |
|||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
NO |
250 W |
41 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
301 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
5 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
TO-220AB |
NOT SPECIFIED |
NOT SPECIFIED |
39 ns |
|||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE |
NO |
41 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
690 ns |
3 |
FLANGE MOUNT |
SILICON |
1200 V |
MATTE TIN OVER NICKEL |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
LOW CONDUCTION LOSS |
TO-247AD |
e3 |
49 ns |
||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
NO |
41 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
690 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
LOW CONDUCTION LOSS |
TO-247AC |
NOT SPECIFIED |
NOT SPECIFIED |
49 ns |
||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
41 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
750 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
ULTRA FAST SOFT RECOVERY |
TO-247AC |
NOT SPECIFIED |
NOT SPECIFIED |
74 ns |
Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.
The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.
The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.
IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.
IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.