45 A Insulated Gate Bipolar Transistors (IGBT) 89

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

IRG4PH50UDPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

45 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

570 ns

3

FLANGE MOUNT

SILICON

1200 V

MATTE TIN OVER NICKEL

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

ULTRA FAST

TO-247AC

e3

73 ns

F3L75R12W1H3B27BOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

45 A

UNSPECIFIED

GENERAL PURPOSE

UNSPECIFIED

RECTANGULAR

4

385 ns

21

FLANGE MOUNT

SILICON

1200 V

-40 Cel

UPPER

R-XUFM-X21

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

42 ns

UL APPROVED

FS25R12W1T4BOMA1

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

45 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

6

505 ns

23

FLANGE MOUNT

175 Cel

SILICON

1200 V

UPPER

R-XUFM-X23

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

80 ns

IRG4PH50UPBF

Infineon Technologies

N-CHANNEL

SINGLE

NO

200 W

45 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

500 ns

600 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

-55 Cel

20 V

6 V

MATTE TIN OVER NICKEL

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-247AC

e3

49 ns

FS25R12W1T4B11BOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

205 W

45 A

UNSPECIFIED

POWER CONTROL

2.25 V

UNSPECIFIED

RECTANGULAR

6

505 ns

22

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X22

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

80 ns

UL APPROVED

IXBF20N360

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

230 W

45 A

PLASTIC/EPOXY

POWER CONTROL

3.4 V

THROUGH-HOLE

RECTANGULAR

1

1285 ns

3

IN-LINE

150 Cel

SILICON

3600 V

-55 Cel

20 V

5 V

SINGLE

R-PSIP-T3

ISOLATED

922 ns

HGTG20N60C3D

Fairchild Semiconductor

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

164 W

45 A

PLASTIC/EPOXY

MOTOR CONTROL

28 ns

THROUGH-HOLE

RECTANGULAR

1

210 ns

388 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

6.3 V

MATTE TIN

SINGLE

R-PSFM-T3

Not Qualified

LOW CONDUCTION LOSS

TO-247

e3

52 ns

HGT1S20N60C3S9A

Onsemi

N-CHANNEL

SINGLE

YES

164 W

45 A

PLASTIC/EPOXY

MOTOR CONTROL

28 ns

1.8 V

GULL WING

RECTANGULAR

1

210 ns

388 ns

2

SMALL OUTLINE

150 Cel

SILICON

600 V

60 ns

-55 Cel

20 V

660 ns

6.3 V

Matte Tin (Sn) - annealed

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

TO-263AB

e3

30

260

52 ns

HGTG20N60C3R

Fairchild Semiconductor

N-CHANNEL

SINGLE

NO

45 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

388 ns

3

FLANGE MOUNT

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-247

52 ns

FGP30N6S2D

Fairchild Semiconductor

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

167 W

45 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

100 ns

163 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

MATTE TIN

SINGLE

R-PSFM-T3

Not Qualified

LOW CONDUCTION LOSS

TO-220AB

e3

28 ns

IXGR32N60CD1

IXYS Corporation

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

140 W

45 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

210 ns

3

IN-LINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

TIN SILVER COPPER

SINGLE

R-PSIP-T3

ISOLATED

Not Qualified

FAST

e1

50 ns

BSM25GP120BOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

45 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

7

420 ns

24

FLANGE MOUNT

150 Cel

SILICON

1200 V

MATTE TIN

UPPER

R-XUFM-X24

ISOLATED

Not Qualified

e3

90 ns

F3L25R12W1T4B27BOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

215 W

45 A

UNSPECIFIED

POWER CONTROL

2.25 V

UNSPECIFIED

RECTANGULAR

4

375 ns

19

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X19

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

54 ns

UL APPROVED

FS25R12W1T4

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

205 W

45 A

UNSPECIFIED

POWER CONTROL

2.25 V

UNSPECIFIED

RECTANGULAR

6

505 ns

23

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X23

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

80 ns

IRG4PH50KDPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

200 W

45 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

300 ns

700 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

6 V

MATTE TIN OVER NICKEL

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-247AC

e3

139 ns

HGT1S20N60C3S

Onsemi

N-CHANNEL

SINGLE

YES

164 W

45 A

PLASTIC/EPOXY

MOTOR CONTROL

28 ns

1.8 V

GULL WING

RECTANGULAR

1

210 ns

388 ns

2

SMALL OUTLINE

150 Cel

SILICON

600 V

60 ns

-55 Cel

20 V

660 ns

6.3 V

MATTE TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-263AB

e3

30

260

52 ns

HGTP20N60C3

Onsemi

N-CHANNEL

SINGLE

NO

164 W

45 A

PLASTIC/EPOXY

MOTOR CONTROL

28 ns

1.8 V

THROUGH-HOLE

RECTANGULAR

1

210 ns

388 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

60 ns

-55 Cel

20 V

660 ns

6.3 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-220AB

52 ns

HGTG20N60C3

Onsemi

N-CHANNEL

SINGLE

NO

164 W

45 A

PLASTIC/EPOXY

MOTOR CONTROL

28 ns

1.8 V

THROUGH-HOLE

RECTANGULAR

1

210 ns

388 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

60 ns

-55 Cel

20 V

660 ns

6.3 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

52 ns

IRGVH50FU

Infineon Technologies

N-CHANNEL

NO

200 W

45 A

Insulated Gate BIP Transistors

150 Cel

1200 V

6 V

Tin/Lead (Sn/Pb)

e0

BSM25GP120

Infineon Technologies

N-CHANNEL

COMPLEX

NO

230 W

45 A

UNSPECIFIED

3.15 V

UNSPECIFIED

RECTANGULAR

7

420 ns

24

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X24

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

90 ns

BSM35GP120GBOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

45 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

7

390 ns

35

FLANGE MOUNT

150 Cel

SILICON

1200 V

MATTE TIN

UPPER

R-XUFM-X35

ISOLATED

Not Qualified

e3

105 ns

F3L75R12W1H3_B11

Infineon Technologies

N-CHANNEL

COMPLEX

NO

45 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

4

385 ns

21

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X21

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

42 ns

UL APPROVED

F3L25R12W1T4_B27

Infineon Technologies

N-CHANNEL

COMPLEX

NO

215 W

45 A

UNSPECIFIED

POWER CONTROL

2.25 V

UNSPECIFIED

RECTANGULAR

4

375 ns

19

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X19

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

54 ns

UL APPROVED

FS30R06W1E3BOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

45 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

6

355 ns

15

FLANGE MOUNT

175 Cel

SILICON

600 V

UPPER

R-XUFM-X15

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

52 ns

FS30R06W1E3-B11

Infineon Technologies

N-CHANNEL

COMPLEX

NO

150 W

45 A

UNSPECIFIED

POWER CONTROL

2 V

UNSPECIFIED

RECTANGULAR

6

355 ns

18

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

UPPER

R-XUFM-X18

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

52 ns

UL RECOGNIZED

BSM25GP120_B2

Infineon Technologies

N-Channel

230 W

45 A

420 ns

125 Cel

SILICON

1200 V

-40 Cel

20 V

ISOLATED

90 ns

F4-25R12NS4

Infineon Technologies

N-CHANNEL

BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

210 W

45 A

UNSPECIFIED

3.75 V

UNSPECIFIED

RECTANGULAR

4

350 ns

22

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X22

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

100 ns

BSM35GP120G

Infineon Technologies

N-CHANNEL

COMPLEX

NO

180 W

45 A

UNSPECIFIED

2.85 V

UNSPECIFIED

RECTANGULAR

7

390 ns

35

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X35

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

105 ns

IRGMIC50UPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

45 A

METAL

PIN/PEG

RECTANGULAR

1

310 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

SINGLE

R-MSFM-P3

ISOLATED

ULTRA FAST

TO-259AA

NOT SPECIFIED

NOT SPECIFIED

51 ns

IRGIH50FDPBF

Infineon Technologies

N-CHANNEL

SINGLE

NO

45 A

METAL

PIN/PEG

RECTANGULAR

1

3

FLANGE MOUNT

150 Cel

SILICON

1200 V

SINGLE

R-MSFM-P3

ISOLATED

FAST

TO-259AA

NOT SPECIFIED

NOT SPECIFIED

IRGMIC50UDPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

45 A

METAL

PIN/PEG

RECTANGULAR

1

3

FLANGE MOUNT

150 Cel

SILICON

600 V

SINGLE

R-MSFM-P3

ISOLATED

ULTRA FAST

TO-259AA

NOT SPECIFIED

NOT SPECIFIED

IRGVH50FD

Infineon Technologies

N-CHANNEL

NO

200 W

45 A

Insulated Gate BIP Transistors

150 Cel

1200 V

6 V

Tin/Lead (Sn/Pb)

e0

IRGIH50FD

Infineon Technologies

N-CHANNEL

SINGLE

NO

200 W

45 A

METAL

PIN/PEG

RECTANGULAR

1

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

6 V

TIN LEAD

SINGLE

R-MSFM-P3

ISOLATED

Not Qualified

FAST

TO-259AA

e0

F3L75R12W1H3_B27

Infineon Technologies

N-CHANNEL

COMPLEX

NO

275 W

45 A

UNSPECIFIED

1.7 V

UNSPECIFIED

RECTANGULAR

4

385 ns

21

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X21

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

42 ns

UL APPROVED

F3L75R12W1H3B11BPSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

45 A

UNSPECIFIED

GENERAL PURPOSE

UNSPECIFIED

RECTANGULAR

4

385 ns

21

FLANGE MOUNT

SILICON

1200 V

-40 Cel

UPPER

R-XUFM-X21

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

42 ns

UL APPROVED

FS30R06W1E3B11BOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

150 W

45 A

UNSPECIFIED

POWER CONTROL

2 V

UNSPECIFIED

RECTANGULAR

6

355 ns

22

FLANGE MOUNT

150 Cel

SILICON

600 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X22

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

52 ns

UL APPROVED

BSM35GP120BOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

45 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

7

390 ns

24

FLANGE MOUNT

150 Cel

SILICON

1200 V

MATTE TIN

UPPER

R-XUFM-X24

ISOLATED

Not Qualified

e3

105 ns

IRGMIC50U

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

45 A

METAL

GENERAL PURPOSE SWITCHING

PIN/PEG

RECTANGULAR

1

310 ns

3

FLANGE MOUNT

SILICON

600 V

SINGLE

R-MSFM-P3

ISOLATED

Not Qualified

ULTRA FAST

TO-259AA

40

260

51 ns

FZ30R07W1E3_B31A

Infineon Technologies

N-CHANNEL

COMPLEX

NO

150 W

45 A

UNSPECIFIED

POWER CONTROL

2 V

UNSPECIFIED

RECTANGULAR

6

20

FLANGE MOUNT

150 Cel

SILICON

650 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X20

1

ISOLATED

IRGMIC50UD

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

200 W

45 A

METAL

PIN/PEG

RECTANGULAR

1

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

5.5 V

TIN LEAD

SINGLE

R-MSFM-P3

ISOLATED

Not Qualified

ULTRA FAST

TO-259AA

e0

BSM35GP120

Infineon Technologies

N-CHANNEL

COMPLEX

NO

230 W

45 A

UNSPECIFIED

2.85 V

UNSPECIFIED

RECTANGULAR

7

390 ns

24

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X24

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

105 ns

FS3L30R07W2H3FB11BPSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

45 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

12

350 ns

32

FLANGE MOUNT

SILICON

650 V

UPPER

R-XUFM-X32

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

88 ns

UL APPROVED

IRGIH50FUPBF

Infineon Technologies

N-CHANNEL

SINGLE

NO

45 A

METAL

PIN/PEG

RECTANGULAR

1

3

FLANGE MOUNT

150 Cel

SILICON

1200 V

SINGLE

R-MSFM-P3

ISOLATED

FAST

TO-259AA

NOT SPECIFIED

NOT SPECIFIED

IRGMIC50UU

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

200 W

45 A

METAL

PIN/PEG

RECTANGULAR

1

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

5.5 V

TIN LEAD

SINGLE

R-MSFM-P3

ISOLATED

Not Qualified

ULTRA FAST

TO-259AA

e0

IRGMIC50UUPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

45 A

METAL

PIN/PEG

RECTANGULAR

1

3

FLANGE MOUNT

150 Cel

SILICON

600 V

SINGLE

R-MSFM-P3

ISOLATED

ULTRA FAST

TO-259AA

NOT SPECIFIED

NOT SPECIFIED

FS30R06W1E3

Infineon Technologies

N-CHANNEL

COMPLEX

NO

150 W

45 A

UNSPECIFIED

POWER CONTROL

2 V

UNSPECIFIED

RECTANGULAR

6

355 ns

15

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

UPPER

R-XUFM-X15

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

52 ns

FS3L30R07W2H3FB11BPSA2

Infineon Technologies

N-CHANNEL

COMPLEX

NO

45 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

12

350 ns

32

FLANGE MOUNT

SILICON

650 V

UPPER

R-XUFM-X32

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

88 ns

UL APPROVED

IRGIH50FU

Infineon Technologies

N-CHANNEL

SINGLE

NO

200 W

45 A

METAL

PIN/PEG

RECTANGULAR

1

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

6 V

TIN LEAD

SINGLE

R-MSFM-P3

ISOLATED

Not Qualified

FAST

TO-259AA

e0

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.