600 W Insulated Gate Bipolar Transistors (IGBT) 48

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum Rise Time (tr)	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)	Reference Standard
STGE200NB60S	STMicroelectronics	N-CHANNEL	SINGLE	NO	600 W	200 A	UNSPECIFIED	POWER CONTROL		1.6 V	UNSPECIFIED	RECTANGULAR	1		4600 ns	4	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V		20 V		NICKEL	UPPER	R-XUFM-X4		ISOLATED	Not Qualified						170 ns
FGH60N60SMD	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	600 W	120 A	PLASTIC/EPOXY	POWER CONTROL	70 ns		THROUGH-HOLE	RECTANGULAR	1	68 ns	163 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		175 Cel	SILICON	600 V		20 V	6 V	Matte Tin (Sn) - annealed	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	LOW CONDUCTION LOSS	TO-247AB	e3	NOT SPECIFIED	NOT SPECIFIED	59 ns
FGH60N60SMD-F085	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	600 W	120 A	PLASTIC/EPOXY	POWER CONTROL	60 ns		THROUGH-HOLE	RECTANGULAR	1	20 ns	139 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		175 Cel	SILICON	600 V		20 V	6 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247AB	e3			66 ns	AEC-Q101
FS200R07N3E4R_B11	Infineon Technologies	N-CHANNEL	COMPLEX	NO	600 W	200 A	UNSPECIFIED	POWER CONTROL		1.95 V	UNSPECIFIED	RECTANGULAR	6		450 ns	35	FLANGE MOUNT	Insulated Gate BIP Transistors		175 Cel	SILICON	650 V		20 V			UPPER	R-XUFM-X35							NOT SPECIFIED	NOT SPECIFIED	210 ns
IXXH50N60B3D1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	600 W	120 A	PLASTIC/EPOXY	POWER CONTROL		1.8 V	THROUGH-HOLE	RECTANGULAR	1		320 ns	3	FLANGE MOUNT			175 Cel	SILICON	600 V	-55 Cel	20 V	6 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD	e3	10	260	75 ns
IXXH50N60C3D1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	600 W	100 A	PLASTIC/EPOXY	POWER CONTROL		2.3 V	THROUGH-HOLE	RECTANGULAR	1		170 ns	3	FLANGE MOUNT			175 Cel	SILICON	600 V	-55 Cel	20 V	5.5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD	e3	10	260	69 ns
IXYH50N65C3H1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	600 W	130 A	PLASTIC/EPOXY	POWER CONTROL		2.1 V	THROUGH-HOLE	RECTANGULAR	1		142 ns	3	FLANGE MOUNT			175 Cel	SILICON	650 V	-55 Cel	20 V	6 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD	e3	10	260	56 ns
IXYN100N65C3H1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	600 W	160 A	PLASTIC/EPOXY	POWER CONTROL		2.3 V	UNSPECIFIED	RECTANGULAR	1			4	FLANGE MOUNT			175 Cel	SILICON	650 V	-55 Cel	20 V	6 V		UPPER	R-PUFM-X4		ISOLATED							62 ns	UL RECOGNIZED
IXXH50N60B3	Littelfuse	N-CHANNEL	SINGLE	NO	600 W	120 A	PLASTIC/EPOXY	POWER CONTROL		1.8 V	THROUGH-HOLE	RECTANGULAR	1		320 ns	3	FLANGE MOUNT			175 Cel	SILICON	600 V	-55 Cel	20 V	6 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD	e3	10	260	75 ns
IXYH50N65C3D1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	600 W	132 A	PLASTIC/EPOXY	POWER CONTROL		2.1 V	THROUGH-HOLE	RECTANGULAR	1		145 ns	3	FLANGE MOUNT			175 Cel	SILICON	650 V	-55 Cel	20 V	6 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD	e3	10	260	56 ns
IXYN100N65A3	Littelfuse	N-CHANNEL	SINGLE	NO	600 W	170 A	PLASTIC/EPOXY	POWER CONTROL		1.8 V	UNSPECIFIED	RECTANGULAR	1		360 ns	4	FLANGE MOUNT			175 Cel	SILICON	650 V	-55 Cel	20 V	6 V		UPPER	R-PUFM-X4		ISOLATED		LOW CONDUCTION LOSS					68 ns	UL RECOGNIZED
FGA60N65SMD	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	600 W	120 A	PLASTIC/EPOXY	POWER CONTROL	70 ns		THROUGH-HOLE	RECTANGULAR	1	68 ns		3	FLANGE MOUNT	Insulated Gate BIP Transistors		175 Cel	SILICON	650 V		20 V	6 V	Matte Tin (Sn) - annealed	SINGLE	R-PSFM-T3				LOW CONDUCTION LOSS		e3	NOT SPECIFIED	NOT SPECIFIED
FS200R06KE3	Infineon Technologies	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO	600 W	200 A	UNSPECIFIED			1.9 V	UNSPECIFIED	RECTANGULAR	6		450 ns	35	FLANGE MOUNT	Insulated Gate BIP Transistors		175 Cel	SILICON	600 V		20 V			UPPER	R-XUFM-X35	1	ISOLATED	Not Qualified					260	210 ns
FGHL75T65LQD	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	600 W	80 A	PLASTIC/EPOXY	POWER CONTROL		1.35 V	THROUGH-HOLE	RECTANGULAR	1			3	FLANGE MOUNT			175 Cel	SILICON	650 V	-55 Cel	20 V	6 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-247		NOT SPECIFIED	NOT SPECIFIED
F3L200R12W2H3_B11	Infineon Technologies	N-CHANNEL	COMPLEX	NO	600 W	200 A	UNSPECIFIED	POWER CONTROL		1.75 V	UNSPECIFIED	RECTANGULAR	4		480 ns	32	FLANGE MOUNT			150 Cel	SILICON	1200 V	-40 Cel	20 V	6.45 V		UPPER	R-XUFM-X32		ISOLATED					NOT SPECIFIED	NOT SPECIFIED	190 ns	UL APPROVED
IFS100B17N3E4P_B11	Infineon Technologies	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, CURRENT SENSING RESISTOR AND THERMISTOR	NO	600 W	150 A	UNSPECIFIED	POWER CONTROL		2.3 V	UNSPECIFIED	RECTANGULAR	6		780 ns	34	FLANGE MOUNT			150 Cel	SILICON	1700 V	-40 Cel	20 V	6.35 V		UPPER	R-XUFM-X34		ISOLATED							260 ns	UL APPROVED
SP001197126	Infineon Technologies	N-CHANNEL	COMPLEX	NO	600 W		UNSPECIFIED	POWER CONTROL		1.75 V	UNSPECIFIED	RECTANGULAR	4		350 ns	15	FLANGE MOUNT			150 Cel	SILICON	1200 V	-40 Cel	20 V	6.45 V		UPPER	R-XUFM-X15		ISOLATED							165 ns	UL APPROVED
SP000843678	Infineon Technologies	N-Channel			600 W					1.95 V					450 ns					150 Cel	SILICON	650 V	-40 Cel	20 V	6.5 V					ISOLATED							210 ns
FS100R17N3E4_B11	Infineon Technologies	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO	600 W		UNSPECIFIED	POWER CONTROL		2.3 V	UNSPECIFIED	RECTANGULAR	6		1240 ns	35	FLANGE MOUNT			150 Cel	SILICON	1700 V	-40 Cel	20 V	6.4 V		UPPER	R-XUFM-X35		ISOLATED					NOT SPECIFIED	NOT SPECIFIED	280 ns	UL APPROVED
FS100R17N3E4	Infineon Technologies	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO	600 W		UNSPECIFIED	POWER CONTROL		2.3 V	UNSPECIFIED	RECTANGULAR	6		1240 ns	35	FLANGE MOUNT			150 Cel	SILICON	1700 V	-40 Cel	20 V	6.4 V		UPPER	R-XUFM-X35		ISOLATED					NOT SPECIFIED	NOT SPECIFIED	280 ns	UL APPROVED
FS100R17PE4	Infineon Technologies	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO	600 W	100 A	UNSPECIFIED	POWER CONTROL		2.3 V	UNSPECIFIED	RECTANGULAR	6		1240 ns	13	FLANGE MOUNT	Insulated Gate BIP Transistors		175 Cel	SILICON	1700 V		20 V			UPPER	R-XUFM-X13		ISOLATED	Not Qualified				NOT SPECIFIED	NOT SPECIFIED	280 ns
FS200R07N3E4R	Infineon Technologies	N-CHANNEL	COMPLEX	NO	600 W	200 A	UNSPECIFIED	POWER CONTROL		1.95 V	UNSPECIFIED	RECTANGULAR	6		450 ns	35	FLANGE MOUNT	Insulated Gate BIP Transistors		175 Cel	SILICON	650 V		20 V			UPPER	R-XUFM-X35							NOT SPECIFIED	NOT SPECIFIED	210 ns
FS100R17N3E4BOSA1	Infineon Technologies				600 W	100 A				2.3 V			1					Insulated Gate BIP Transistors		175 Cel		1700 V		20 V											NOT SPECIFIED	NOT SPECIFIED
FS100R17N3E4B11BOSA1	Infineon Technologies	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO	600 W		UNSPECIFIED	POWER CONTROL		2.3 V	UNSPECIFIED	RECTANGULAR	6		1240 ns	35	FLANGE MOUNT			150 Cel	SILICON	1700 V	-40 Cel	20 V	6.4 V		UPPER	R-XUFM-X35		ISOLATED					NOT SPECIFIED	NOT SPECIFIED	280 ns	UL APPROVED
MG75Q2YS52	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO	600 W	100 A	UNSPECIFIED	MOTOR CONTROL		3.6 V	UNSPECIFIED	RECTANGULAR	2	300 ns	500 ns	7	FLANGE MOUNT	Insulated Gate BIP Transistors	600 W	150 Cel	SILICON	1200 V		20 V	6 V		UPPER	R-XUFM-X7		ISOLATED	Not Qualified	HIGH SPEED					50 ns
MG75Q1ZS50	Toshiba			NO	600 W	100 A	UNSPECIFIED			3.6 V	UNSPECIFIED	RECTANGULAR	1			5	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel		1200 V		20 V			UPPER	R-XUFM-X5			Not Qualified
MG75Q2YS50	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO	600 W	100 A	UNSPECIFIED	MOTOR CONTROL		3.6 V	UNSPECIFIED	RECTANGULAR	2	300 ns	500 ns	7	FLANGE MOUNT	Insulated Gate BIP Transistors	600 W	150 Cel	SILICON	1200 V		20 V	6 V		UPPER	R-XUFM-X7		ISOLATED	Not Qualified	HIGH SPEED			NOT SPECIFIED	NOT SPECIFIED	50 ns
MG75Q2YS11	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO	600 W	75 A	PLASTIC/EPOXY	POWER CONTROL		2.7 V	UNSPECIFIED	RECTANGULAR	2	1000 ns		7	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V		20 V			UPPER	R-PUFM-X7			Not Qualified
MBM100GS12AW	Renesas Electronics				600 W	100 A				3.4 V			1					Insulated Gate BIP Transistors		150 Cel		1200 V		20 V
MBB200GS6AW	Renesas Electronics	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE	NO	600 W	200 A	UNSPECIFIED	POWER CONTROL		2.6 V	UNSPECIFIED	RECTANGULAR	6		600 ns	19	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V		20 V			UPPER	R-XUFM-X19		ISOLATED	Not Qualified	HIGH SPEED, LOW NOISE					400 ns
MBM200GS6AW	Renesas Electronics	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO	600 W	200 A	UNSPECIFIED	POWER CONTROL		2.5 V	UNSPECIFIED	RECTANGULAR	2		600 ns	7	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V		20 V			UPPER	R-XUFM-X7		ISOLATED	Not Qualified	HIGH SPEED, LOW NOISE					300 ns
MBB100GS12AW	Renesas Electronics				600 W	100 A				3.4 V			1					Insulated Gate BIP Transistors		150 Cel		1200 V		20 V
IXGQ150N60Y3	Littelfuse				600 W	150 A				4 V			1					Insulated Gate BIP Transistors		150 Cel		600 V		20 V
IXGQ150N100Y3	Littelfuse				600 W	150 A				4 V			1					Insulated Gate BIP Transistors		150 Cel		1000 V		20 V
IXXA50N60B3	Littelfuse	N-CHANNEL	SINGLE	YES	600 W	120 A	PLASTIC/EPOXY	POWER CONTROL		1.8 V	GULL WING	RECTANGULAR	1		320 ns	2	SMALL OUTLINE			175 Cel	SILICON	600 V	-55 Cel	20 V	6 V	Matte Tin (Sn)	SINGLE	R-PSSO-G2	1	COLLECTOR			TO-263AB	e3	10	260	75 ns
IXXP50N60B3	Littelfuse	N-CHANNEL	SINGLE	NO	600 W	120 A	PLASTIC/EPOXY	POWER CONTROL		1.8 V	THROUGH-HOLE	RECTANGULAR	1		320 ns	3	FLANGE MOUNT			175 Cel	SILICON	600 V	-55 Cel	20 V	6 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-220AB				75 ns
IXYP50N65C3	Littelfuse	N-CHANNEL	SINGLE	NO	600 W	132 A	PLASTIC/EPOXY	POWER CONTROL		2.1 V	THROUGH-HOLE	RECTANGULAR	1		145 ns	3	FLANGE MOUNT			175 Cel	SILICON	650 V	-55 Cel	20 V	6 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-220AB				56 ns
IXYT40N120A4HV	Littelfuse	N-CHANNEL	SINGLE	YES	600 W	140 A	PLASTIC/EPOXY	POWER CONTROL		1.8 V	GULL WING	RECTANGULAR	1		1040 ns	2	SMALL OUTLINE			175 Cel	SILICON	1200 V	-55 Cel	20 V	6.5 V		SINGLE	R-PSSO-G2		COLLECTOR			TO-268AA				67 ns
IXYA50N65C3	Littelfuse	N-CHANNEL	SINGLE	YES	600 W	132 A	PLASTIC/EPOXY	POWER CONTROL		2.1 V	GULL WING	RECTANGULAR	1		145 ns	2	SMALL OUTLINE			175 Cel	SILICON	650 V	-55 Cel	20 V	6 V	Matte Tin (Sn)	SINGLE	R-PSSO-G2	1	COLLECTOR			TO-263AB	e3	10	260	56 ns
MIEB101W1200DPFEH	Littelfuse	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE	NO	600 W	171 A	UNSPECIFIED	MOTOR CONTROL		2.3 V	UNSPECIFIED	RECTANGULAR	6		720 ns	19	FLANGE MOUNT			125 Cel	SILICON	1200 V	-40 Cel	20 V	7 V		UPPER	R-XUFM-X19		ISOLATED							180 ns	UL RECOGNIZED
IXYN75N65C3D1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	600 W	150 A	PLASTIC/EPOXY	POWER CONTROL		2.3 V	UNSPECIFIED	RECTANGULAR	1		179 ns	4	FLANGE MOUNT			175 Cel	SILICON	650 V	-55 Cel	20 V	6 V		UPPER	R-PUFM-X4		ISOLATED							90 ns	UL RECOGNIZED
MIEB100W1200DPFTEH	Littelfuse	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE	NO	600 W	171 A	UNSPECIFIED	POWER CONTROL		2.3 V	UNSPECIFIED	RECTANGULAR	6		720 ns	35	FLANGE MOUNT			125 Cel	SILICON	1200 V	-40 Cel	20 V	7 V		UPPER	R-XUFM-X35		ISOLATED							180 ns	UL RECOGNIZED
IXYN82N120C3	Littelfuse	N-CHANNEL	SINGLE	NO	600 W	120 A	PLASTIC/EPOXY	POWER CONTROL		3.2 V	UNSPECIFIED	RECTANGULAR	1		295 ns	4	FLANGE MOUNT			175 Cel	SILICON	1200 V	-55 Cel	20 V	4.5 V		UPPER	R-PUFM-X4		ISOLATED							119 ns	UL RECOGNIZED
IXYN100N65B3D1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	600 W	185 A	PLASTIC/EPOXY	POWER CONTROL		1.85 V	UNSPECIFIED	RECTANGULAR	1		358 ns	4	FLANGE MOUNT			175 Cel	SILICON	650 V	-55 Cel	20 V	6 V		UPPER	R-PUFM-X4		ISOLATED							65 ns	UL RECOGNIZED
IXYH40N120A4	Littelfuse	N-CHANNEL	SINGLE	NO	600 W	140 A	PLASTIC/EPOXY	POWER CONTROL		1.8 V	THROUGH-HOLE	RECTANGULAR	1		1040 ns	3	FLANGE MOUNT			175 Cel	SILICON	1200 V	-55 Cel	20 V	6.5 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-247				67 ns
IXYH40N90C3	Littelfuse	N-CHANNEL	SINGLE	NO	600 W	105 A	PLASTIC/EPOXY	POWER CONTROL		2.5 V	THROUGH-HOLE	RECTANGULAR	1		237 ns	3	FLANGE MOUNT			175 Cel	SILICON	900 V	-55 Cel	20 V	5.5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD	e3	10	260	81 ns
IXXH50N60C3	Littelfuse	N-CHANNEL	SINGLE	NO	600 W	100 A	PLASTIC/EPOXY	POWER CONTROL		2.3 V	THROUGH-HOLE	RECTANGULAR	1		170 ns	3	FLANGE MOUNT			175 Cel	SILICON	600 V	-55 Cel	20 V	5.5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD	e3	10	260	69 ns
IXYH50N65C3	Littelfuse	N-CHANNEL	SINGLE	NO	600 W	132 A	PLASTIC/EPOXY	POWER CONTROL		2.1 V	THROUGH-HOLE	RECTANGULAR	1		145 ns	3	FLANGE MOUNT			175 Cel	SILICON	650 V	-55 Cel	20 V	6 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD	e3	10	260	56 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.