625 W Insulated Gate Bipolar Transistors (IGBT) 33

Reset All
Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

APT100GN60LDQ4G

Microchip Technology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

625 W

229 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

435 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

30 V

6.5 V

TIN SILVER COPPER

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

HIGH RELIABILITY

TO-264AA

e1

96 ns

IXBK55N300

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

625 W

130 A

PLASTIC/EPOXY

POWER CONTROL

3.2 V

THROUGH-HOLE

RECTANGULAR

1

475 ns

3

FLANGE MOUNT

150 Cel

SILICON

3000 V

-55 Cel

25 V

5 V

TIN SILVER COPPER

SINGLE

R-PSFM-T3

COLLECTOR

LOW CONDUCTION LOSS

TO-264AA

e1

10

260

637 ns

BSM75GB120DN2

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

625 W

75 A

UNSPECIFIED

POWER CONTROL

3.2 V

UNSPECIFIED

RECTANGULAR

2

520 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

100 ns

IXYH50N120C3D1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

625 W

90 A

PLASTIC/EPOXY

POWER CONTROL

3.5 V

THROUGH-HOLE

RECTANGULAR

1

220 ns

3

FLANGE MOUNT

150 Cel

SILICON

1200 V

-55 Cel

20 V

5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AD

e3

10

260

96 ns

APT150GN120JDQ4

Microchip Technology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

625 W

215 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

UNSPECIFIED

RECTANGULAR

1

955 ns

4

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

30 V

UPPER

R-PUFM-X4

ISOLATED

Not Qualified

HIGH RELIABILITY, LOW CONDUCTION LOSS

NOT SPECIFIED

NOT SPECIFIED

120 ns

UL RECOGNIZED

APT100GN60B2G

Microchip Technology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

625 W

229 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

435 ns

3

IN-LINE

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

30 V

6.5 V

TIN SILVER COPPER

SINGLE

R-PSIP-T3

COLLECTOR

Not Qualified

HIGH RELIABILITY

e1

96 ns

IXBX55N300

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

625 W

130 A

PLASTIC/EPOXY

POWER CONTROL

3.2 V

THROUGH-HOLE

RECTANGULAR

1

475 ns

3

IN-LINE

150 Cel

SILICON

3000 V

-55 Cel

25 V

5 V

SINGLE

R-PSIP-T3

COLLECTOR

LOW CONDUCTION LOSS

637 ns

IXXH80N65B4H1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

625 W

160 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

247 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

6.5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AD

e3

10

260

123 ns

SKM100GAL123D

Semikron International

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

625 W

100 A

UNSPECIFIED

POWER CONTROL

3 V

UNSPECIFIED

RECTANGULAR

1

520 ns

5

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

TIN/SILVER

UPPER

R-XUFM-X5

ISOLATED

Not Qualified

e3/e4

NOT SPECIFIED

NOT SPECIFIED

100 ns

UL RECOGNIZED

FGH60N6S2

Fairchild Semiconductor

N-CHANNEL

SINGLE

NO

625 W

75 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

90 ns

187 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-247

e3

59 ns

IXXH80N65B4D1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

625 W

180 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

222 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

6.5 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

125 ns

IXXH80N65B4

Littelfuse

N-CHANNEL

SINGLE

NO

625 W

160 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

222 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

6.5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AD

e3

10

260

125 ns

MID100-12A3

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

625 W

135 A

UNSPECIFIED

POWER CONTROL

3 V

UNSPECIFIED

RECTANGULAR

1

700 ns

5

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X5

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

150 ns

UL RECOGNIZED

MIXG120W1200TEH

Littelfuse

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

625 W

186 A

UNSPECIFIED

POWER CONTROL

2 V

PIN/PEG

RECTANGULAR

6

330 ns

35

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

7 V

UPPER

R-XUFM-P35

ISOLATED

120 ns

UL RECOGNIZED

STGYA120M65DF2AG

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

625 W

160 A

PLASTIC/EPOXY

POWER CONTROL

2.15 V

THROUGH-HOLE

RECTANGULAR

1

351 ns

3

IN-LINE

175 Cel

SILICON

650 V

-55 Cel

20 V

7 V

SINGLE

R-PSIP-T3

COLLECTOR

NOT SPECIFIED

NOT SPECIFIED

110 ns

AEC-Q101

STGYA120M65DF2

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

625 W

160 A

PLASTIC/EPOXY

POWER CONTROL

2.15 V

THROUGH-HOLE

RECTANGULAR

1

351 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

7 V

SINGLE

R-PSFM-T3

COLLECTOR

NOT SPECIFIED

NOT SPECIFIED

110 ns

GA200NS61U

Infineon Technologies

625 W

200 A

2.2 V

1

Insulated Gate BIP Transistors

150 Cel

600 V

20 V

BSM75GAL120DN2

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

625 W

105 A

UNSPECIFIED

POWER CONTROL

3.2 V

UNSPECIFIED

RECTANGULAR

1

520 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

100 ns

BSM75GB170DN2

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

625 W

110 A

UNSPECIFIED

POWER CONTROL

3.9 V

UNSPECIFIED

RECTANGULAR

2

740 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1700 V

20 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

550 ns

BSM75GB160D

Infineon Technologies

625 W

100 A

1

Insulated Gate BIP Transistors

150 Cel

1600 V

20 V

AUIRGP65G40D0

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

625 W

62 A

PLASTIC/EPOXY

POWER CONTROL

29 ns

2.2 V

THROUGH-HOLE

RECTANGULAR

1

32 ns

157 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

82 ns

-55 Cel

20 V

195 ns

5.5 V

SINGLE

R-PSFM-T3

TO-247AC

NOT SPECIFIED

NOT SPECIFIED

47 ns

AEC-Q101

BSM75GB120D

Infineon Technologies

625 W

75 A

2.8 V

1

Insulated Gate BIP Transistors

1200 V

AUIRGF65G40D0

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

625 W

62 A

PLASTIC/EPOXY

POWER CONTROL

29 ns

2.2 V

THROUGH-HOLE

RECTANGULAR

1

32 ns

157 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

82 ns

-55 Cel

20 V

195 ns

5.5 V

SINGLE

R-PSFM-T3

TO-247AD

NOT SPECIFIED

NOT SPECIFIED

47 ns

AEC-Q101

BSM75GAL100D

Infineon Technologies

625 W

75 A

3.3 V

1

Insulated Gate BIP Transistors

150 Cel

1000 V

20 V

FF150R12YT3

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

625 W

200 A

UNSPECIFIED

2.15 V

UNSPECIFIED

RECTANGULAR

2

610 ns

24

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X24

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

330 ns

BSM75GD170DL

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

625 W

150 A

UNSPECIFIED

3.3 V

UNSPECIFIED

RECTANGULAR

6

930 ns

19

FLANGE MOUNT

Insulated Gate BIP Transistors

125 Cel

SILICON

1700 V

20 V

UPPER

R-XUFM-X19

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

200 ns

MG75Q2YS51

Toshiba

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

625 W

100 A

UNSPECIFIED

MOTOR CONTROL

3.6 V

UNSPECIFIED

RECTANGULAR

2

300 ns

500 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

600 W

150 Cel

SILICON

1200 V

20 V

6 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

HIGH SPEED

NOT SPECIFIED

NOT SPECIFIED

50 ns

MIXG120W1200TEH-PC

Littelfuse

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

625 W

186 A

UNSPECIFIED

POWER CONTROL

2 V

PIN/PEG

RECTANGULAR

6

330 ns

35

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

7 V

UPPER

R-XUFM-P35

ISOLATED

120 ns

UL RECOGNIZED

MII100-12A3

Littelfuse

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

625 W

135 A

UNSPECIFIED

MOTOR CONTROL

3 V

UNSPECIFIED

RECTANGULAR

2

700 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

150 ns

UL RECOGNIZED

VIE100-12S4

Littelfuse

N-CHANNEL

COMPLEX

NO

625 W

100 A

CERAMIC, METAL-SEALED COFIRED

POWER CONTROL

3.7 V

UNSPECIFIED

RECTANGULAR

2

10

FLANGE MOUNT

Insulated Gate BIP Transistors

625 W

150 Cel

SILICON

1200 V

UPPER

R-CUFM-X10

ISOLATED

Not Qualified

INPUT LOGIC,ISOLATION,DRIVE CIRCUITRY AND PROTECTION IN A MODULE

NOT SPECIFIED

NOT SPECIFIED

MDI100-12A3

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

625 W

135 A

UNSPECIFIED

POWER CONTROL

3 V

UNSPECIFIED

RECTANGULAR

1

700 ns

5

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X5

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

150 ns

UL RECOGNIZED

IXBN75N170

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

625 W

145 A

PLASTIC/EPOXY

POWER CONTROL

3.1 V

UNSPECIFIED

RECTANGULAR

1

840 ns

4

FLANGE MOUNT

150 Cel

SILICON

1700 V

-55 Cel

20 V

5.5 V

UPPER

R-PUFM-X4

ISOLATED

277 ns

UL RECOGNIZED

IXA220I650NA

Littelfuse

N-CHANNEL

SINGLE

NO

625 W

255 A

PLASTIC/EPOXY

POWER CONTROL

1.8 V

UNSPECIFIED

RECTANGULAR

1

140 ns

4

FLANGE MOUNT

150 Cel

SILICON

650 V

-40 Cel

20 V

5.5 V

UPPER

R-PUFM-X4

ISOLATED

80 ns

UL RECOGNIZED

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.