Renesas Electronics Insulated Gate Bipolar Transistors (IGBT) 503

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

CY25BAJ-8F-T13

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

8

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

400 V

6 V

1.5 V

DUAL

R-PDSO-G8

Not Qualified

CT30VM-8

Renesas Electronics

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

Insulated Gate BIP Transistors

150 Cel

SILICON

400 V

30 V

7 V

SINGLE

R-PSIP-T3

COLLECTOR

Not Qualified

RJP1CS08DWT-80#X0

Renesas Electronics

N-CHANNEL

400 A

Insulated Gate BIP Transistors

150 Cel

1250 V

30 V

NOT SPECIFIED

NOT SPECIFIED

RJH1CD6DPQ-E0#T2

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

297.6 W

50 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

290 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

30 V

8 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

72 ns

CY20AAJ-8H-T13

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

8

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

400 V

6 V

1.5 V

DUAL

R-PDSO-G8

Not Qualified

RJP30E2DPP-M0#T2

Renesas Electronics

N-CHANNEL

SINGLE

NO

25 W

35 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

230 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

360 V

30 V

5 V

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

130 ns

RJP1CS28DWS-80#W0

Renesas Electronics

NOT SPECIFIED

NOT SPECIFIED

MBL800D33B

Renesas Electronics

8000 W

800 A

5.2 V

1

Insulated Gate BIP Transistors

125 Cel

3300 V

20 V

RJP63F3DPP-M0-T2

Renesas Electronics

N-CHANNEL

SINGLE

NO

30 W

40 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

150 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

630 V

30 V

5 V

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

90 ns

RJH60D3DPP-M0-T2

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

30 W

35 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

160 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

30 V

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

45 ns

RJH60F7DPQ-A0#T0

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

90 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

216 ns

3

FLANGE MOUNT

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

NOT SPECIFIED

NOT SPECIFIED

144 ns

2SH27

Renesas Electronics

N-CHANNEL

SINGLE

NO

15 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

710 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-220AB

370 ns

RJP1CS03DWT-80#X0

Renesas Electronics

N-CHANNEL

60 A

Insulated Gate BIP Transistors

150 Cel

1250 V

30 V

NOT SPECIFIED

NOT SPECIFIED

MBM300GS12AW

Renesas Electronics

1700 W

300 A

3.4 V

1

Insulated Gate BIP Transistors

150 Cel

1200 V

20 V

RJP65S06DWS-80#W0

Renesas Electronics

NOT SPECIFIED

NOT SPECIFIED

MBB75GS12A

Renesas Electronics

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

75 A

POWER CONTROL

6

SILICON

1200 V

ISOLATED

Not Qualified

HIGH SPEED, ULTRA SOFT FAST RECOVERY

350 ns

MBN400C20

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

3000 W

400 A

UNSPECIFIED

POWER CONTROL

5.2 V

UNSPECIFIED

RECTANGULAR

1

4000 ns

4

FLANGE MOUNT

Insulated Gate BIP Transistors

125 Cel

SILICON

2000 V

20 V

UPPER

R-XUFM-X4

ISOLATED

Not Qualified

HIGH RELIABILITY, LOW NOISE

1700 ns

RJP65S06DWA-80#W0

Renesas Electronics

N-CHANNEL

YES

200 A

UNCASED CHIP

Insulated Gate BIP Transistors

150 Cel

650 V

30 V

6.8 V

NOT SPECIFIED

NOT SPECIFIED

RBN40H125S1FPQ-A0

Renesas Electronics

RJP1CS07DWT-80#X0

Renesas Electronics

N-CHANNEL

YES

300 A

Insulated Gate BIP Transistors

150 Cel

1250 V

30 V

6.8 V

NOT SPECIFIED

NOT SPECIFIED

RJH60D5BDPQ-E0#T2

Renesas Electronics

N-CHANNEL

NO

200 W

75 A

Insulated Gate BIP Transistors

150 Cel

600 V

30 V

6 V

NOT SPECIFIED

NOT SPECIFIED

MBN400GR12

Renesas Electronics

NO

2000 W

400 A

PLASTIC/EPOXY

2.8 V

UNSPECIFIED

RECTANGULAR

1

4

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

1200 V

20 V

UPPER

R-PUFM-X4

Not Qualified

MBM600GS6CW

Renesas Electronics

NO

1700 W

600 A

PLASTIC/EPOXY

2.5 V

UNSPECIFIED

RECTANGULAR

1

7

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

600 V

20 V

UPPER

R-PUFM-X7

Not Qualified

RJH60M0DPQ-A0-T0

Renesas Electronics

N-CHANNEL

NO

140 W

45 A

Insulated Gate BIP Transistors

150 Cel

600 V

30 V

7 V

RJP4009ANS-01-Q6

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.8 W

150 A

PLASTIC/EPOXY

FLAT

RECTANGULAR

1

8

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

400 V

6 V

1.2 V

DUAL

R-PDSO-F8

CY25AAJ-8F-T13

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

8

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

400 V

6 V

1.5 V

DUAL

R-PDSO-G8

Not Qualified

MBM75A6

Renesas Electronics

75 A

3 V

1

Insulated Gate BIP Transistors

600 V

20 V

GN6020C

Renesas Electronics

N-CHANNEL

SINGLE

NO

100 W

20 A

PLASTIC/EPOXY

GENERAL PURPOSE SWITCHING

300 ns

THROUGH-HOLE

RECTANGULAR

1

400 ns

400 ns

3

IN-LINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

SINGLE

R-PSIP-T3

Not Qualified

RJH1CM7DPQ-E0#T2

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

328.9 W

50 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

280 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

30 V

8 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

NOT SPECIFIED

NOT SPECIFIED

78 ns

2SH26

Renesas Electronics

N-CHANNEL

SINGLE

NO

10 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

680 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-220AB

355 ns

RJP6085DPN-00#T2

Renesas Electronics

N-CHANNEL

SINGLE

NO

178.5 W

40 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

100 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

30 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

90 ns

RJQ6008BDPM

Renesas Electronics

MBB75AS6

Renesas Electronics

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

75 A

POWER CONTROL

6

SILICON

600 V

ISOLATED

Not Qualified

HIGH SPEED, ULTRA SOFT FAST RECOVERY

400 ns

RJP6016JPE-00#J3

Renesas Electronics

N-CHANNEL

YES

112 W

40 A

Insulated Gate BIP Transistors

150 Cel

600 V

20 V

8 V

CT40TMH-8

Renesas Electronics

N-CHANNEL

SINGLE

NO

200 A

PLASTIC/EPOXY

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

400 V

30 V

7 V

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

RJP1CS04DWA-80#W0

Renesas Electronics

N-CHANNEL

100 A

Insulated Gate BIP Transistors

150 Cel

1250 V

30 V

NOT SPECIFIED

NOT SPECIFIED

CT60AM-18F-AD

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

180 W

60 A

PLASTIC/EPOXY

THROUGH-HOLE

RECTANGULAR

1

500 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

900 V

25 V

6 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

150 ns

MBM150GS6A

Renesas Electronics

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

150 A

POWER CONTROL

2

SILICON

600 V

ISOLATED

Not Qualified

HIGH SPEED, ULTRA SOFT FAST RECOVERY

300 ns

RJP4002ANS-00-Q1

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

FLAT

RECTANGULAR

1

8

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

400 V

4 V

1.2 V

DUAL

R-PDSO-F8

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

MBN1200GS12AW

Renesas Electronics

5600 W

1200 A

3.6 V

1

Insulated Gate BIP Transistors

150 Cel

1200 V

20 V

RJP65S03DWT-80#YB1

Renesas Electronics

NOT SPECIFIED

NOT SPECIFIED

RJH1CV7DPK-00#T0

Renesas Electronics

N-CHANNEL

NO

320 W

70 A

Insulated Gate BIP Transistors

150 Cel

1200 V

30 V

NOT SPECIFIED

NOT SPECIFIED

RJH30H2DPK-M0-T2

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

60 W

35 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

240 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

360 V

30 V

SINGLE

R-PSFM-T3

COLLECTOR

120 ns

RJP1CS05DWT-80#X0

Renesas Electronics

N-CHANNEL

YES

150 A

Insulated Gate BIP Transistors

150 Cel

1250 V

30 V

6.8 V

NOT SPECIFIED

NOT SPECIFIED

RJH60D1DPP-E0#T2

Renesas Electronics

N-CHANNEL

NO

30 W

20 A

Insulated Gate BIP Transistors

150 Cel

600 V

30 V

NOT SPECIFIED

NOT SPECIFIED

RJH60M2DPP-M0#T2

Renesas Electronics

N-CHANNEL

NO

33.8 W

25 A

Insulated Gate BIP Transistors

150 Cel

600 V

30 V

NOT SPECIFIED

NOT SPECIFIED

RJP65S04DWT-80#YB1

Renesas Electronics

NOT SPECIFIED

NOT SPECIFIED

2SH16

Renesas Electronics

N-CHANNEL

SINGLE

NO

200 W

75 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

600 ns

1600 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

TIN LEAD

SINGLE

R-PSFM-T3

Not Qualified

e0

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.